Abstract: A package structure includes a chip, a substrate, wires and a molding compound. The chip includes an active surface, a back surface and bonding pads disposed on the active surface. The substrate includes first and second solder masks, first and second patterned circuit layers and a core layer having a first surface and a second surface. The first patterned circuit layer is disposed on the first solder mask. The core layer disposed on the first solder mask with the first surface partially exposes the first patterned circuit layer. The substrate disposed on the active surface with the first solder mask exposes the bonding pads. The second patterned circuit layer disposed on the second surface. The second solder mask partially covers the second patterned circuit layer. The wires are connected between the first patterned circuit layer and the bonding pads. The molding compound covers the chip, the wire and the substrate.

Abstract: Disclosed is a leadframe-type semiconductor package having an EMI shielding layer connected to ground, comprising a leadframe, a chip, an encapsulant, and an EMI shielding layer. The encapsulant has two lead-extending sides and two leadless sides. The EMI shielding layer covers at least one surface of the encapsulant and the leadless sides. A metal tie bar coupling to the die attach pad of the leadframe has a cut end aligned with and exposed on one of the leadless sides. A ground lead also has a cut end aligned with and exposed on one of the leadless sides Since the EMI shielding layer covers and electrically connects the cut ends of the metal tie bar and the ground lead, the die pad with its metal tie bar of the leadframe is connected to the ground lead through external electrical connection outside the encapsulant to allow the die pad having ground potential.

Abstract: Disclosed is a leadframe-type semiconductor package having an EMI shielding layer connected to ground, comprising a leadframe, a chip, an encapsulant, and an EMI shielding layer. The encapsulant has two lead-extending sides and two leadless sides. The EMI shielding layer covers at least one surface of the encapsulant and the leadless sides. A metal tie bar coupling to the die attach pad of the leadframe has a cut end aligned with and exposed on one of the leadless sides. A ground lead also has a cut end aligned with and exposed on one of the leadless sides Since the EMI shielding layer covers and electrically connects the cut ends of the metal tie bar and the ground lead, the die pad with its metal tie bar of the leadframe is connected to the ground lead through external electrical connection outside the encapsulant to allow the die pad having ground potential.

Abstract: Disclosed is a semiconductor package utilizing a tape to reinforce fixing of leads to a die pad having a through hole. The package primarily comprises a leadframe having the plurality of leads and the die pad, a tape, at least a chip, and an encapsulant. The die pad. The tape is attached beneath the leadframe adjacent to the inner fingers of the leads to fix the leads and the die pad for wire-bonding. Additionally, the tape does not completely cover the through hole. The chip is disposed on the leads and the die pad and electrically connected to the inner fingers. The encapsulant encapsulates the die pad, the tape and the chip with the leads being insulatedly bonded where the encapsulant further completely fills into the through hole through its opening without completely covered by the tape.

Abstract: Disclosed is a method for forming an EMI shielding layer on all surfaces of a semiconductor package in order to enhance EMI shielding effect on all surfaces and to prevent electrical short to external terminals of the semiconductor package. According to the method, a temporary protective layer is formed on the external terminals where the temporary protective layer is further in contact with a plurality of annular surface regions of the semiconductor package surrounding and adjacent to the external terminals. Then, the EMI shielding layer is formed on the top surface, the bottom surface and the side surfaces of the semiconductor package without forming on the external terminals.

Abstract: A multi-chip stacked package and its mother chip to save an interposer are revealed. The mother chip is a two-layer structure consisting of a semiconductor layer and an organic layer where a redistribution layer is embedded into the organic layer with a plurality of first terminals and a plurality of second terminals disposed on the redistribution layer and exposed from the organic layer. The mother chip is flip-chip mounted on the substrate. The active surface of the daughter chip is in contact with the organic layer with the bonding pads of the daughter chip bonded to the first terminals. Furthermore, a plurality of electrically connecting components electrically connect the second terminals to the substrate. In the multi-chip stacked package, the interposer can be eliminated with a thinner overall package thickness as well as controlled package warpage.

Abstract: A lead frame package structure for side-by-side disposed chips including a lead frame, at least two chips, and a package material. The lead frame includes a plurality of inner leads; a plurality of outer leads; and at least two chip carrying areas having different horizontal levels. The chips are of different sizes and are respectively disposed on the chip carrying areas. The package material encapsulate the inner leads, the chip carrying areas and the chips, wherein the outer leads exposed out of the package material extend from the inner leads and have different horizontal levels.

Abstract: A semiconductor package having dual parallel wires is disclosed. A chip is attached on a substrate where the chip and the substrate are electrically connected by a bonding wire. The bonding wire consists of a first metal wire, a second metal wire, and an insulating body where the insulating body encapsulates the first and the second metal wires to make both metal wires parallel to each other. The insulating body forms a constant gap between the first and the second metal wires so that both metal wires do not contact to each other. Therefore, the electrical performance of the package can greatly be enhanced with the same productivity.

Abstract: A method for forming an isolated inner lead from a leadframe is revealed. The leadframe primarily comprises a plurality of leads, the isolated inner lead, and an external lead. Each lead has an inner portion having a finger. The isolated inner lead having two fingers is completely formed inside a molding area and is made of the same metal leadframe as the leads. One finger of the isolated inner lead and the fingers of the leads are linearly arranged. The other finger of the isolated inner lead is adjacent to a finger of the external lead. At least one of the inner portions divides the isolated inner lead from the external lead. The isolated inner lead is integrally connected to an adjacent one of the inner portions by a connecting block. A tape-attaching step is performed to mechanically connect the isolated inner lead where two insulating tapes are attached in a manner that the connecting block can be removed.

Abstract: A BGA package comprises a substrate, a chip disposed on the substrate, and a plurality of solder balls disposed under the substrate. The substrate further has a plurality of ball pads and a solder mask having a plurality of openings to expose the ball pads where the ball pads include two or more non-signal pads. Solder mask further has a trench connecting the ones of the openings on the non-signal pads where the trench is filled with solder paste so that the solder balls bonded to the non-signal pads are electrically connected together to achieve power integrity and to reduce numbers of power/ground layers to make the package thinner and the substrate cost lower.

Abstract: A substrate panel primarily comprises a plurality of substrate strips arranged in an array, one or more current input lines, a plurality of cascaded lines connecting between the substrate strips, and a current input buffer gate. Current input lines connect a current input side of the substrate panel to the adjacent substrate strips. The current input buffer gate has a frame around the substrate strips and a plurality of meshes where the frame intersects with the current input lines and the meshes intersect with the cascaded lines with both ends of the meshes connecting to the frame. Therefore, the current can be evenly distributed to each substrate strip during plating processes to improve the issues of different plating thicknesses and different plating roughness caused by different current densities and to protect the internal circuits inside the substrate strips from the damages due to current surges and unstable voltages.

Abstract: A semiconductor package with isolated inner lead(s) is revealed. A chip is disposed on a leadframe segment and encapsulated by an encapsulant. The leadframe segment includes a plurality of leads, an isolated lead, and an external lead where each lead has an internal portion and an external portion. The isolated inner lead is completely formed inside the encapsulant and the external lead is partially formed inside and extended outside the encapsulant. At least one of the internal portions of the leads is located between the isolated inner lead and the external lead. Two fingers are formed at two opposing ends of the isolated inner lead without covering by the chip. One of the fingers imitates a plurality of fingers of the leads to arrange along a first side of the chip. The other finger of the isolated inner lead and a finger of the external lead are arranged along a second side of the chip.

Abstract: A lead frame package structure for side-by-side disposed chips including a lead frame, at least two chips, and a package material. The lead frame includes a plurality of inner leads; a plurality of outer leads; and at least two chip carrying areas having different horizontal levels. The chips are of different sizes and are respectively disposed on the chip carrying areas. The package material encapsulate the inner leads, the chip carrying areas and the chips, wherein the outer leads exposed out of the package material extend from the inner leads and have different horizontal levels.

Abstract: A flip-chip packaging substrate with gradational pad pitches for flip-chip jointing a bumped chip and a flip chip package utilizing the substrate are revealed. A plurality of connecting pads with non-equal pitches are disposed in an array on the substrate for jointing a plurality of equal-pitch bumps of a bumped chip. The pitches of the connecting pads are numbered according to the distance from a central line through a defined central point. When the defined pitch numbers increase by one, a substrate CTE compensation value is subtracted from the distance from the corresponding connecting pads to the center point so that the connecting pads are able to accurately align to the equal-pitch bumps during reflowing processes. Therefore, the expansion distance from the connecting pads of the substrate to the central point is equal to the expansion distance from the bumps of the bumped chip to the central point to avoid alignment shift between the bumps and the corresponding connecting pads due to CTE mismatch.

Abstract: A wafer level packaging method is revealed. Firstly, a wafer with a plurality of bumps disposed on a surface is provided. Placing a dielectric tape on a mold plate is followed. Then, the wafer is laminated with the mold plate to make the dielectric tape be compliantly bonded to the surface of the wafer and to make the bumps be embedded in the dielectric tape. After removing the mold plate, flattening the dielectric tape to form a plurality of exposed surfaces of the bumps wherein the exposed surfaces and the flattened surface of the dielectric tape are coplanar. Therefore, the exposed surfaces of the bumps can be regarded as effective alignment points for easy pattern recognition of the wafer level packaged wafers during singulation process.

Abstract: A multi-chip stacked package and its mother chip to save an interposer are revealed. The mother chip is a two-layer structure consisting of a semiconductor layer and an organic layer where a redistribution layer is embedded into the organic layer with a plurality of first terminals and a plurality of second terminals disposed on the redistribution layer and exposed from the organic layer. The mother chip is flip-chip mounted on the substrate. The active surface of the daughter chip is in contact with the organic layer with the bonding pads of the daughter chip bonded to the first terminals. Furthermore, a plurality of electrically connecting components electrically connect the second terminals to the substrate. In the multi-chip stacked package, the interposer can be eliminated with a thinner overall package thickness as well as controlled package warpage.

Abstract: A substrate strip for semiconductor packages to slow the crack growth, primarily comprises a molding area and two side rails. The molding area includes a plurality of packaging units. The side rails are located outside the molding area and include two opposing longer sides of the substrate strip. A metal mesh is disposed on the side rails. The metal mesh consists of a plurality of crisscrossed wires having a plurality of isolated wire terminals at one edge of the metal mesh. Accordingly, crack growth is slowed by the specific metal mesh without damaging the packaging units. In one embodiment, the metal mesh is without boundary wires connecting to the isolated wire terminals to enhance the resistance to crack growth.

Abstract: A semiconductor packaging method without an interposer is revealed. A mother chip is a two-layer structure consisting of a semiconductor layer and an organic layer where a redistribution layer is embedded into the organic layer with a plurality of first terminals and a plurality of second terminals disposed on the redistribution layer and exposed from the organic layer. The mother chip is flip-chip mounted on the substrate. The active surface of the daughter chip is in contact with the organic layer with the bonding pads of the daughter chip bonded to the first terminals. Furthermore, a plurality of electrically connecting components electrically connect the second terminals to the substrate. In the multi-chip stacked package, the interposer can be eliminated with a thinner overall package thickness as well as controlled package warpage.

Abstract: A circuit substrate ready to slot is revealed, primarily comprising a board base with slot-reserved area. A plurality of bonding fingers, a plating bus loop, and a plurality of plating lines disposed on the bottom surface of the board base. The bonding fingers are located adjacent to but outside the slot-reserved area and the plating bus loop is located inside the slot-reserved area. The plating lines connect the bonding fingers to the plating bus lines. The plating bus loop includes two side bars closer to the long sides of the slot-reserved area than the bonding fingers to the long sides. Accordingly, the lengths of the plating lines within the slot-reserved area are shortened. It is possible to solve the issues of metal burs and shifting of the remaining plating lines when routing a slot along the peripheries of the slot-reserved area. Moreover, the plating current can evenly distribute to improve the plating qualities on the surfaces of the bonding fingers.

Abstract: A laminated substrate and the semiconductor package utilizing the substrate are revealed. The laminated substrate primarily comprises a core layer, a first metal layer and a first solder mask disposed on the bottom surface of the core layer, and a second metal layer and a second solder mask disposed on the top surface of the core layer. The two solder masks have different CTEs to compensate potential substrate warpage caused by thermal stresses. Therefore, the manufacturing cost of the substrate can be reduced without adding extra stiffeners nor changing thicknesses of semiconductor packages to suppress substrate warpage during packaging processes. Especially, a die-attaching layer partially covers the second solder mask by printing and is planar after pre-curing for zero-gap die-attaching.