Abstract: A semiconductor package with enhanced mobility of ball terminals is revealed. A chip is attached to the substrate by a die-attaching material where the substrate has at least a stepwise depression on the covered surface to make the substrate thickness be stepwise decreased from a central line of the die-attaching area toward two opposing sides of the substrate. The die-attaching material is filled in the stepwise depression. Therefore, the thickness of the die-attaching material under cross-sectional corner(s) of the chip becomes thicker so that a row of the ball terminals away from the central line of the die-attaching area can have greater mobility without changing the appearance, dimensions, thicknesses of the semiconductor package, nor the placing plane of the ball terminals. Accordingly, the row of ball terminals located adjacent the edges or corners of the semiconductor package can withstand larger stresses without ball cracks nor ball drop.

Abstract: A semiconductor device having linear zigzag(s) for wire bonding is revealed, primarily comprising a chip, a plurality of leads made of a lead frame and a plurality of bonding wires electrically connecting the chip and the leads. At least one of the leads has a linear zigzag including a first finger and a second finger connected each other in a zigzag form. One end of one of the bonding wire is bonded to a bonding pad on the chip and the other end is selectively bonded to either the first finger or the second finger but not both in a manner that the wire-bonding direction of the bonding wire is parallel to or in a sharp angle with the direction of the connected fingers for easy wire bonding processes. Therefore, the semiconductor device can assemble chips with diverse dimensions or with diverse bonding pads layouts by flexible wire-bonding angles at linear zigzag to avoid electrical short between the adjacent leads.

Abstract: A wafer level packaging method is revealed. Firstly, a wafer with a plurality of bumps disposed on a surface is provided. Placing a dielectric tape on a mold plate is followed. Then, the wafer is laminated with the mold plate to make the dielectric tape be compliantly bonded to the surface of the wafer and to make the bumps be embedded in the dielectric tape. After removing the mold plate, flattening the dielectric tape to form a plurality of exposed surfaces of the bumps wherein the exposed surfaces and the flattened surface of the dielectric tape are coplanar. Therefore, the exposed surfaces of the bumps can be regarded as effective alignment points for easy pattern recognition of the wafer level packaged wafers during singulation process.

Abstract: A method for fabricating a plurality of wafer level chip scale packages is revealed. A bumped wafer is laminated with a mold plate with a protection film placed thereon to partially embed the bumps of the wafer into the protection film and to form an underfill gap between the wafer and the protection film. By a first sawing step, the wafer fixed by the protection film is singulated into a plurality of chips having sides between the active surface and the back surface and also a filling gap is formed between the sides. Then, an encapsulant is formed on the protection film where the encapsulant fills the underfill gap through the filling gap to completely encapsulate the chips and the non-embedded portions of the bumps. By separating the encapsulant from the protection film and a second sawing step, the mold plate and the protection film are removed, and the encapsulant is singulated into a plurality of individual wafer level chip scale packages.

Abstract: A LOC semiconductor package with the leadframe for the package is revealed. The LOC semiconductor package primarily comprises a plurality of leadframe's leads, at least a tie bar, a chip, and an encapsulant encapsulating the components mentioned above. Each lead has a bonding finger. The tie bar has a dummy finger where the dummy finger is linearly disposed at one side of the disposition area of the bonding fingers. The chip has an active surface with the bonding fingers. When the dummy finger and the bonding fingers are disposed above the active surface by a die-attaching layer, the dummy finger is adjacent to one edge of the active surface. The bonding fingers are electrically connected with the bonding pads. The dummy finger will bear the concentrated stresses to avoid the bonding fingers on the active surface to delamination or break due to external stresses and to avoid the interference to the layout of the leads.

Abstract: A window ball grid array substrate and its package structure includes a package substrate with a long slot arranged thereon, wherein the improvement is characterized by the long slot penetrating an end of the package substrate making the package substrate appear to be U-shaped.

Abstract: A window-type BGA semiconductor package is revealed, primarily comprising a substrate with a wire-bonding slot, a chip disposed on a top surface of the substrate, and a plurality of bonding wires passing through the wire-bonding slot. A plurality of plating line stubs are formed on a bottom surface of the substrate, connect the bonding fingers on the substrate and extend to the wire-bonding slot. The bonding wires electrically connect the bonding pads of the chip to the corresponding bonding fingers of the substrate. The plating line stubs are compliant to the wire-bonding paths of the bonding wires correspondingly connected at the bonding fingers, such as parallel to the overlapped arrangement, to avoid electrical short between the plating line stubs and the bonding wires with no corresponding relationship of electrical connections.

Abstract: A semiconductor package with isolated inner lead(s) is revealed. A chip is disposed on a leadframe segment and encapsulated by an encapsulant. The leadframe segment includes a plurality of leads, an isolated lead, and an external lead where each lead has an internal portion and an external portion. The isolated inner lead is completely formed inside the encapsulant and the external lead is partially formed inside and extended outside the encapsulant. At least one of the internal portions of the leads is located between the isolated inner lead and the external lead. Two fingers are formed at two opposing ends of the isolated inner lead without covering by the chip. One of the fingers imitates a plurality of fingers of the leads to arrange along a first side of the chip. The other finger of the isolated inner lead and a finger of the external lead are arranged along a second side of the chip.

Abstract: A LOC leadframe-based semiconductor package includes a chip with multiple rows of bonding pads. At least a bus bar is attached to the chip and is disposed between a first row of bonding pads and the fingers of the leads. A plurality of bonding wires electrically connect the first row of bonding pads to the fingers of the leads. The portion of the bus bar attached to the active surface of the chip includes a bent section bent away from the fingers. A long bonding wire electrically connects one of a second row of bonding pads to one of the fingers of the leads by overpassing the bent section. Therefore, the distance between the long bonding wire and the bus bar is increased to avoid electrical short between the long bonding wire and the bus bar and to enhance the quality of electrical connections of the LOC semiconductor package.

Abstract: A method for forming an isolated inner lead from a leadframe is revealed. The leadframe primarily comprises a plurality of leads, the isolated inner lead, and an external lead. Each lead has an inner portion having a finger. The isolated inner lead having two fingers is completely formed inside a molding area and is made of the same metal leadframe as the leads. One finger of the isolated inner lead and the fingers of the leads are linearly arranged. The other finger of the isolated inner lead is adjacent to a finger of the external lead. At least one of the inner portions divides the isolated inner lead from the external lead. The isolated inner lead is integrally connected to an adjacent one of the inner portions by a connecting block. A tape-attaching step is performed to mechanically connect the isolated inner lead where two insulating tapes are attached in a manner that the connecting block can be removed.

Abstract: A semiconductor device having package-on-package (POP) configuration, primarily comprises a plurality of vertically stacked semiconductor packages and a plurality of electrical connecting components such as solder paste to electrically connect the external terminals of the semiconductor packages such as external leads of leadframes. Each semiconductor package has an encapsulant to encapsulate at least a chip where the encapsulant is movable with respect to the electrical connecting components to absorb the stresses between the vertically stacked semiconductor packages. In one embodiment, a stress-releasing layer is interposed between the vertically stacked semiconductor packages.

Abstract: A substrate with reduced substrate warpage and a semiconductor package utilizing the substrate are revealed. The substrate primarily comprises a core where a wiring layer and a first solder mask are formed on one surface of the core, and a second solder mask and a die-attaching layer are formed on the other surface of the core. The first solder mask has a thickness difference with respect to the second solder mask in a manner to reduce the warpage of the substrate caused by thermal stresses due to temperature differences can be well under control. Therefore, the manufacturing cost of the substrate can be lower without adding extra stiffeners to achieve substrate warpage control during semiconductor packaging processes.

Abstract: A mold array process (MAP) for manufacturing a plurality of semiconductor packages is revealed. Firstly, a substrate strip including a plurality of substrate units arranged in an array within a molding area is provided. A plurality of chips are disposed on the substrate units. An encapsulant by molding is formed on the molding area of the substrate strip to continuously encapsulate the chips. During the molding process, an adjustable top mold is implemented where a cavity width between two opposing sidewalls inside a top mold chest can be adjusted to make the mold flow speeds at the center and at the side rails of the molding area the same.

Abstract: A POP (Package-On-Package) semiconductor device with encapsulating protection of soldered joints between the external leads, primarily comprises a plurality of stacked semiconductor packages and dielectric coating. Each semiconductor package includes at least a chip, a plurality of external leads of leadframe, and an encapsulant where the external leads are exposed and extended from a plurality of sides of the encapsulant. Terminals of a plurality external leads of a top semiconductor package are soldered to the soldered regions of the corresponding external leads of a bottom semiconductor package. The dielectric coating is disposed along the sides of the encapsulant of the bottom semiconductor package to connect the soldered points between the external leads and to partially or completely encapsulate the soldering materials so that the stresses between the soldered joints can be dispersed and no electrical shorts happen.

Abstract: An IC package mainly includes a substrate having slot(s), a chip, a protective encapsulant, a stiffening encapsulant, and a plurality of external terminals. The Young's modulus of the stiffening encapsulant is greater than the one of the protective encapsulant and the curing shrinkage of the stiffening encapsulant is smaller than the one of the protective encapsulant. The protective encapsulant is formed on one of the surfaces of the substrate for encapsulating the chip. The stiffening encapsulant protrudes from the other surface of the substrate where the external terminals are disposed. Moreover, the stiffening encapsulant is formed inside the slot and is contacted with the chip. Since the stiffening encapsulant is embedded and formed inside the slot, therefore, the contact area of the stiffening encapsulant with the substrate is increased to enhance the warpage resistance of the IC package.

Abstract: A leadframe-based semiconductor package is revealed, primarily comprising a chip, a plurality of leads of a leadframe, a multi-layer tape, and an encapsulant. The multi-layer tape is attached to the chip and includes an adhesive layer disposed on a dielectric core layer. The internal leads of the leads are partially embedded in the adhesive layer in a manner not to directly contact the dielectric core layer. A bonding interface with a U-shaped profile is formed between the adhesive layer and each internal lead to increase the adhesions of the leads so that the internal leads will not be shifted nor delaminated during molding processes. The concentrated stresses exerted on the internal leads disposed at the corners of the packages will be released and reduced.

Abstract: A substrate panel primarily comprises a plurality of substrate strips arranged in an array, one or more current input lines, a plurality of cascaded lines connecting between the substrate strips, and a current input buffer gate. Current input lines connect a current input side of the substrate panel to the adjacent substrate strips. The current input buffer gate has a frame around the substrate strips and a plurality of meshes where the frame intersects with the current input lines and the meshes intersect with the cascaded lines with both ends of the meshes connecting to the frame. Therefore, the current can be evenly distributed to each substrate strip during plating processes to improve the issues of different plating thicknesses and different plating roughness caused by different current densities and to protect the internal circuits inside the substrate strips from the damages due to current surges and unstable voltages.

Abstract: A universal substrate for semiconductor packages and the package are revealed. The universal substrate comprises a substrate core, two peripheral rows of bonding fingers and a central row of redistribution fingers disposed on the substrate core, and a solder mask formed on the substrate core. The redistribution fingers are located between two rows of the bonding fingers. The solder mask has an opening to expose the redistribution fingers. A plurality of exhaust grooves are formed on the solder mask without penetrating through the solder mask where one end of the exhaust grooves connects to the opening and the other end extends toward the edges of the substrate core without connecting to another opening exposing the bonding fingers to be the releasing channels of gases generated during die-attaching processes. When disposing larger IC chips, the issue of residue bubbles trapped in the covered opening and the issue of contaminations of bonding fingers by the die-bonding adhesives can be eliminated.

Abstract: A semiconductor package with multiple chips side-by-side disposed on a leadframe is revealed, primarily comprising a plurality of leads of a leadframe, a first chip, a second chip, and an encapsulant to encapsulate the chips where the chip thickness of the second chip is larger than the one of the first chip. The first chip and the second chip are individually disposed on a first die-attaching area and on a second die-attaching area of the leads or a die pad of the leadframe. The second die-attaching area is downset relative to the first die-attaching area in a manner that a bottom surface of the encapsulant is closer to the second die-attaching areas than to the first die-attaching areas. Therefore, when chips with different thicknesses are side-by-side disposed, there is no unbalanced mold flow nor package warpage issue.

Abstract: A Chip-On-Lead (COL) multi-chip package is revealed, primarily comprising a plurality of leads, a first chip disposed on the first leads, one or more second chips stacked on the first chip, and an encapsulant. The leads have a plurality of internal leads encapsulated inside the encapsulant where the internal leads are fully formed on a downset plane toward and parallel to a bottom surface of the encapsulant. The height between the internal leads to a top surface of the encapsulant is three times or more greater than the height between the internal leads and the bottom surface. Since the number and the thickness of the second chips is under controlled, tile thickness between the top surface of the encapsulant and the most adjacent one of the second chips is about the same as the one between the internal leads and the bottom surface of the encapsulant.