Abstract: A method for fabricating an integrated circuit device is provided. The method includes forming an interconnect layer over a substrate, wherein the interconnect layer has a first interlayer dielectric layer, a first conductive feature in a first portion of the first interlayer dielectric layer, and a second conductive feature in a second portion of the first interlayer dielectric layer; depositing a dielectric layer over the interconnect layer; removing a first portion of the dielectric layer over the first conductive feature and the first portion of the first interlayer dielectric layer, and remaining a second portion of the dielectric layer over the second conductive feature and the second portion of the first interlayer dielectric layer; and forming a memory structure over the first conductive feature.

Abstract: A water filter includes a filtering head, a filter bottle assembly, a switch member, and a quick release device. The filtering head includes a flow channel module. The filter bottle assembly includes a filter bottle. The quick release device includes a press lever, two links, and two push members. When the press lever is pivoted, the two links and the two push members are driven by the press lever to move the filter bottle simultaneously so that the filter bottle is mounted on or detached from the filtering head quickly. The a switch member functions as a waterway switch to control a water supply of the filtering head and functions as a locking mechanism for locking or unlocking the quick release device.

Abstract: The present disclosure provides an electronic package. The electronic package includes an antenna structure having a first antenna and a second antenna at least partially covered by the first antenna. The electronic package also includes a directing element covering the antenna structure. The directing element has a first portion configured to direct a first electromagnetic wave having a first frequency to transmit via the first antenna and a second portion configured to direct a second electromagnetic wave having a second frequency different from the first frequency to transmit via the second antenna. A method of manufacturing an electronic package is also provided.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect within a first inter-level dielectric (ILD) layer over a substrate. A memory device is disposed over the first interconnect and is surrounded by a second ILD layer. A sidewall spacer is arranged along opposing sides of the memory device and an etch stop layer is arranged on the sidewall spacer. The sidewall spacer and the etch stop layer have upper surfaces that are vertically offset from one another by a non-zero distance. A second interconnect extends from a top of the second ILD layer to an upper surface of the memory device.

Abstract: The present disclosure provides an antenna module including a substrate, a first antenna disposed on the substrate and a second antenna disposed on the substrate and spaced apart from the first antenna. The first antenna is configured to have a first operating frequency and the second antenna is configured to have a second operating frequency different from the first operating frequency. The antenna module further includes an element configured to focus an electromagnetic wave transmitted or received by the first antenna and the second antenna. A semiconductor device package is also disclosed.

Abstract: A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate. The resistive element includes a top electrode, a bottom electrode, and a resistive material layer positioned between the top electrode and the bottom electrode. The RRAM structure further includes a field effect transistor (FET) formed on the semiconductor substrate, the FET having a source and a drain. The drain has a zero-tilt doping profile and the source has a tilted doping profile. The resistive memory element is coupled with the drain via a portion of an interconnect structure.

Abstract: A method for managing a genuine fabric with blockchain data comprises the following steps: receiving at least one image of a genuine fabric photographed by a computing device, wherein the image contains at least one anti-counterfeiting texture generated during a manufacturing process thereof, and the computing device performs image analysis on the anti-counterfeiting texture to obtain at least one hash value; forming an smart contract with a text serial number corresponding to the genuine fabric and the hash value by one of a plurality of nodes in a blockchain through the computing device, and launching the smart contract to the nodes; and providing a key to at least one of a fabric production end and a brand sales end, wherein after the smart contract is signed, a non-fungible token which is associated with the genuine fabric is minted at one of the nodes in the blockchain.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a carrier, an antenna element and a cladding element. The carrier defines a first area and a second area adjacent to the first area. The antenna element is in the first area. The cladding element covers the antenna element and is configured for enhancing antenna gain of the antenna element. The second area is exposed from the cladding element and is distant from the antenna element.

Abstract: Various embodiments of the present application are directed towards a method for forming a flat via top surface for memory, as well as an integrated circuit (IC) resulting from the method. In some embodiments, an etch is performed into a dielectric layer to form an opening. A liner layer is formed covering the dielectric layer and lining the opening. A lower body layer is formed covering the dielectric layer and filling a remainder of the opening over the liner layer. A top surface of the lower body layer and a top surface of the liner layer are recessed to below a top surface of the dielectric layer to partially clear the opening. A homogeneous upper body layer is formed covering the dielectric layer and partially filling the opening. A planarization is performed into the homogeneous upper body layer until the dielectric layer is reached.

Abstract: Various embodiments of the present application are directed towards an integrated chip comprising memory cells separated by a void-free dielectric structure. In some embodiments, a pair of memory cell structures is formed on a via dielectric layer, where the memory cell structures are separated by an inter-cell area. An inter-cell filler layer is formed covering the memory cell structures and the via dielectric layer, and further filling the inter-cell area. The inter-cell filler layer is recessed until a top surface of the inter-cell filler layer is below a top surface of the pair of memory cell structures and the inter-cell area is partially cleared. An interconnect dielectric layer is formed covering the memory cell structures and the inter-cell filler layer, and further filling a cleared portion of the inter-cell area.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Abstract: A method for fabricating an integrated circuit is provided. The method includes depositing a dielectric layer over a conductive feature; etching an opening in the dielectric layer to expose the conductive feature, such that the dielectric layer has a tapered sidewall surrounding the opening; depositing a bottom electrode layer into the opening in the dielectric layer; depositing a resistance switch layer over the bottom electrode layer; patterning the resistance switch layer and the bottom electrode layer respectively into a resistance switch element and a bottom electrode, in which a sidewall of the bottom electrode is landing on the tapered sidewall of the dielectric layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate. The bottom electrode has a first thickness along an outermost edge and a second thickness between the outermost edge and a lateral center of the bottom electrode. The first thickness is larger than the second thickness. A data storage structure is over the bottom electrode and a top electrode is over the data storage structure.

Abstract: An ?-aminoketone-containing polyfunctionalized macromolecular photoinitiator, which is prepared from a double-bond-containing ?-aminoketone micromolecular photoinitiator A and a polythiol compound B through thiol-ene click reaction. A preparation of the ?-aminoketone-containing polyfunctionalized macromolecular photoinitiator and an application of the ?-aminoketone-containing polyfunctionalized macromolecular photoinitiator in the radiation curing are also provided.

Abstract: A semiconductor structure includes a first electrode comprising a first metallic material; a memory film including at least one dielectric metal oxide material and contacting the first electrode; and a second electrode comprising a second metallic material and contacting the memory film. The memory film includes a center region having a first average atomic ratio of a passivation element to oxygen that is less than 0.01, and includes a peripheral region having a second average atomic ratio of the passivation element to oxygen that is greater than 0.05.

Abstract: A pixel array substrate includes data lines, first gate lines, pixel structures, first common lines, and conductive line sets. The conductive line sets are arranged in a first direction. Each of the conductive line sets includes first conductive line groups and a second conductive line group sequentially arranged in the first direction. Each of the first conductive line groups includes second gate lines and a second common line. The second conductive line group includes first auxiliary lines and a second common line. An arrangement order of the second gate lines and the second common line of each of the first conductive line groups in the first direction are the same as an arrangement order of the first auxiliary lines and the second common line of the second conductive line group in the first direction, respectively.

Abstract: A method and system for recommending content using a chatbot are provided. The content recommendation method includes calling a chatbot to a chatroom based on a first user interaction with the chatroom; providing first content corresponding to a second user interaction with the chatroom while the chatbot is in the chatroom; and recommending second content related to the first content.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first resistive random access memory (RRAM) element and a second RRAM element over a substrate. A conductive element is arranged below the first RRAM element and the second RRAM element. The conductive element electrically couples the first RRAM element to the second RRAM element. An upper insulating layer continuously extends over the first RRAM element and the second RRAM element. An upper inter-level dielectric (ILD) structure laterally surrounds the first RRAM element and the second RRAM element. The upper insulating layer separates the first RRAM element and the second RRAM element from the upper ILD structure.

Abstract: A method for predicting a prognosis of a gastric cancer patient is provided, including measuring expression levels of five RNAs in a sample of the gastric cancer patient, and the five RNAs being ANTXR1, COL6A3, THBS2, THBS4, and SFRP4; and comparing the expression levels of the five RNAs in the sample with expression levels of the five RNAs in a control, in which the gastric cancer patient is identified as having a poor prognosis when the expression levels of the five RNAs in the sample are lower than the expression levels of the five RNAs in the control.

Abstract: A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the metal-containing oxide portion has a same metal material as that of the buffer element. The resistance switch element is over the metal-containing oxide portion. The top electrode is over the resistance switch element.