Abstract: The present invention provides a method for the prognosis of lung cancer patient based on the expression levels of miRNA-135b, LZTS1, LATS2 and nuclear TAZ. The invention also provides a method for treatment of lung cancer.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a substrate, a deep well formed in the substrate, a first well and a second well formed in the deep well, a gate electrode formed on the substrate and disposed between the first well and the second well, a first isolation, and a second isolation. The second well is spaced apart from the first well. The first isolation extends down from the surface of the substrate and is disposed between the gate electrode and the second well. The second isolation extends down from the surface of the substrate and is adjacent to the first well. A ratio of a depth of the first isolation to a depth of the second isolation is smaller than 1.

Abstract: An electronic device including a housing, a support member, and a camera module is provided. The housing has a bump. The bump extends toward the outside of the electronic device and correspondingly forms a recess on the inside of the housing. The support member includes a chassis and a holder. The chassis is disposed inside the housing. The holder includes a body, an accommodation recess located on the body and facing the recess, and a skirt extending outwardly from a side of the accommodation recess. The holder is supported against the chassis through the skirt. The camera module is disposed inside the accommodation recess, and a portion of the camera module protrudes outside the accommodation recess, wherein the protruding portion is located in the recess, and the support member is located outside the recess, such that a sidewall of the recess faces and surrounds the camera module.

Abstract: A safety snap hook includes a body defining a hook throat opening, a pivotable gate biased to close the hook throat opening, a pivotable trigger extending through an aperture in the gate and biased to press against a locking surface of the gate, and a pivotable locking member biased to a locking position whereat rotation of the gate relative to the body is prevented. When free ends of the trigger and the locking member are rotated toward the body to remove the trigger from the locking surface and rotate the locking member to a release position, the gate can be rotated relative to the body to open the hook throat opening.

Abstract: The invention provides a zwitterionic-bias material for blood cell selection, being a copolymer formed by zwitterionic structural units and charged structural units wherein the zwitterionic structural unit comprises at least one positively charged moiety and one negatively charged moiety, a distance between the positively charged moiety and the negatively charged moiety is a length of 1˜5 carbon-carbon bonds, and the zwitterionic structural units and charged structural units are randomly arranged to have zwitterionic-bias.

Abstract: A camera assembly, including at least one holder, at least one camera module, and a buffer material, is provided. The holder includes at least one accommodating recess. The camera module is disposed in the accommodating recess, and a gap exists between the camera module and a sidewall of the accommodating recess. The buffer material is filled in the gap to position the camera module in the accommodating recess of the holder. Further, an electronic device including a housing and the camera assembly aforementioned is provided.

Abstract: A testing device and a testing method thereof are provided. The testing device is connected to a terminal device running a graphical user interface (GUI). The testing device runs a testing program to start a recording procedure to execute the following steps: detecting a plurality of actions generated in response to operations on the terminal device; detecting a foreground application of the GUI; reading a plurality of pieces of object information of the foreground application; and determining the actions to record an object property operation of the foreground application and a call command. The testing device further stops the recording procedure to generate and store a script file and a reference log file. The script file includes the object property operation and the call command.

Abstract: The invention provides a zwitterionic-bias material for blood cell selection, being a copolymer formed by zwitterionic structural units and charged structural units wherein the zwitterionic structural unit comprises at least one positively charged moiety and one negatively charged moiety, a distance between the positively charged moiety and the negatively charged moiety is a length of 1˜5 carbon-carbon bonds, and the zwitterionic structural units and charged structural units are randomly arranged to have zwitterionic-bias.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

Abstract: Disclosed is a liquid crystal compound with negative dielectric anisotropy, having a general formula as Formula 1. In Formula 1, each of L1, L2, L3, and L4, being same or different, is hydrogen, halogen, or cyano group. Each of R1 and R2, being same or different, is hydrogen, halogen, C1-12 alkyl group, C1-12 alkoxy group, C1-12 haloalkyl group, C2-12 alkenyl group, C2-12 ether group, or C2-12 alkynyl group. Each of A1 and A2, being same or different, is benzene, cyclohexane, or cyclohexene. Z1 is —CF2O—, or —OCF2—, and Z2 is —CF2O—, or —OCF2—.

Abstract: An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.

Abstract: In general, techniques are provided for receiving a first control plane message that indicates the reachability of the second PE network device as a designated forwarder in an Ethernet segment. The techniques include receiving a second control plane message comprising information that indicates, in the event of a network failure at the second PE router, that the third PE network device of the plurality of PE network devices is the designated forwarder in the layer two segment. The techniques also include forwarding layer two frames to the second PE network device identified as the designated forwarder in the layer two segment; and responsive to determining a network failure at the second PE network device, configuring, based at least in part on the second control plane message, a forwarding plane of the first PE network device to forward layer two frames to the third PE network device as the designated forwarder.

Abstract: A first network device receives a control message at an interface from a second network device, wherein the first network device and the second network device use a multipoint service that provides layer two (L2) connectivity between L2 networks. The control message specifies one or more L2 addresses of customer network devices that are provided connectivity to an autonomous system by the second network device, wherein the control message identifies the L2 addresses as static L2 addresses that are to be persistently maintained at the first network device as reachable by the interface. In response to receiving the control message and by the first network device, the first network device stores the L2 addresses as persistently maintained static L2 addresses being reachable by the interface at which the control message was received.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes providing a substrate including an isolation region, forming a resistor over the isolation region, and forming a contact over the resistor. The method also includes implanting with a dopant concentration that is step-increased at a depth of the resistor and that remains substantially constant as depth increases.

Abstract: The present disclosure provides a composite optical film including a brightness enhancement film, a high refractive-index layer, and an intermediate layer. The brightness enhancement film has a plurality of brightness enhancement structures parallel to each other, and a top surface and a bottom surface opposite to each other. The brightness structures are disposed on the top surface. The high refractive-index layer is disposed on the bottom surface, and includes a film and a plurality of inorganic nano-particles disposed within the film. The intermediate layer is disposed between the brightness enhancement film and the high refractive-index layer.

Abstract: A metal oxide semiconductor structure and a production method thereof, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

Abstract: A cover-type containing structure for flexible enclosures primarily includes a front cover sheet, a rear cover sheet and a flexible enclosure. The front cover sheet includes a first joining edge and a cover piece, whereas the rear cover sheet includes a cover assembly corresponding to the cover piece. The flexible enclosure includes a second joining edge and by engaging the first joining edge with the second joining edge, the front cover sheet and the flexible enclosure are fixed. Besides, the containing structure further includes a holding portion. Under a contained state, the holding portion is used to contain smaller objectives; whereas, in an unfolded state, in addition to using the flexible enclosure to contain larger objectives, the holding portion can be also used to contain smaller objectives. The present invention can be also applied to a piece of clothing combined with a bag unit or other flexible enclosure.

Abstract: A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer.

Abstract: A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.