Abstract: The present invention discloses a method for providing a message to a mobile communication device. The method includes the following steps: a dispatched message is received from a service-providing server through a message-dispatching server. The dispatched message includes identification information of at least one message receiver. Rule-operating and message-processing are performed to the dispatched message through the message-dispatching server after a fixed time period from a time at which the dispatched message is received. The rule-operated and message-processed dispatched message is displayed on a display unit of a mobile communication device through the message-dispatching server. The mobile communication device logs in with the identification information of the message receiver.

Abstract: Developed here is a mitotic network comprising a signature of up to 54 genes, and including also sub-sets of genes within the signature, which can identify members by requiring higher correlation values for a signature gene. The present mitotic network provides for methods for prognosis and diagnosis of various cancers. The mitotic network is conserved across cancers exhibiting aberrant mitotic activity and several genes in the network act as therapeutic targets. Development of other inhibitors of mitosis can apply expression values of the genes in the mitotic network from patient tissue to select patients during clinical validation of the new drugs.

Abstract: Disclosed is a liquid-crystal compound with negative dielectric anisotropy, having the chemical formula: wherein A1, A2, and A3 are independently selected from cyclohexyl group, cyclohexenyl group, or phenyl group; L1 and L2 are independently selected from H or F; R is selected from H, F, Cl, C1-10 alkyl group, C1-10 alkenyl group, C1-10 alkoxy group, or C1-10 ether group; Y is fluorinated methyl group; m and n are independently selected from an integer of 0-2; and 1?m+n?3.

Abstract: An apparatus for identifying morphology comprises a substrate, a driving circuit, a readout circuit and an identifying circuit. The substrate comprises temperature sensors each comprising a sensing transistor. The driving circuit selects at least one of the transistors as a target sensing transistor, and outputs a driving signal to the target sensing transistor to heat the target sensing transistor in a heating period. The target sensing transistor senses a temperature change to generate a sensing signal in a sensing period after the heating period. The readout circuit reads the sensing signal, and the identifying circuit identifies the morphology according to the sensing signal.

Abstract: A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

Abstract: The present invention relates to a stair exercise device for simulating stair climbing, the device having a plurality of steps which are activated by the weight of a person walking up them. A stationary platform at the base of the stair exercise device sends a signal to a controller to bring the exercise device to a controlled stop when an operator steps onto the platform. The steps of the exercise device stop in a predetermined location when the exercise device comes to a controlled stop, ensuring proper step location to allow the operator to easily enter and exit the exercise device. Steps have a step platform of a different color than the risers between steps to aid in foot placement.

Abstract: An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Abstract: A variable-angle vortex generator (10) installed in an intake pipe (100) of an internal combustion engine includes a shaft seat (1), a plurality of vanes (2) and a position restoring mechanism (3). Each vane (2) is arranged radially with an interval apart from each other and pivotally coupled to the shaft seat (1) and each vane (2) has a movable end (21) at an edge of the vane (2). The position restoring mechanism (3) is installed at the shaft seat (1) and includes a synchronizing element (31) for connecting each movable end (21). Each vane (2) is pushed by a fluid to produce a swing movement and let the fluid in the intake pipe (100) form a smooth vortex.

Abstract: One aspect is a method for compiling optimization of an application and a compiler thereof. The method includes determining could-be-constant variables in source code of the application. Constant variables designated as final constant variables and values of the constant variables are obtained using the could-be-constant variables. The application is compiled using the constant variables and the values of the constant variables.

Abstract: A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein.

Abstract: An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions formed on a surface thereof. The nanospheres are located on the first buffer layer formed on the protrusions and covered by the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Abstract: A display panel having a repairing structure has a display region and a periphery circuit region surrounding the display region. At least one scan line, at least one first connection line and a gate driver are positioned on the periphery circuit region. The gate driver is configured to output a gate signal to the scan line via the connection line. The repairing structure comprises a first repairing wire and a driving chip positioned on the periphery circuit region. The driving chip is located at one end of the first repairing wire. The driving chip is configured to output a repairing gate signal to the connection line via the first repairing wire when the gate signal provide to the scan line from the gate driver is abnormal.

Abstract: An electric connecting structure comprising preferred oriented Cu6Sn5 grains and a method for fabricating the same are disclosed. The method of the present invention comprises steps: (A) providing a first substrate; (B) forming a first nano-twinned copper layer on part of a surface of the first substrate; (C) using a solder to connect the first substrate with a second substrate having a second electrical pad, in which the second electrical pad comprises a second nano-twinned copper layer, and the solder locates between the first nano-twinned copper layer and the second nano-twinned copper layer; and (D) reflowing at the temperature of 200° C. to 300° C. to transform at least part of the solder into an intermetallic compound (IMC) layer, in which the IMC layer comprises plural Cu6Sn5 grains with a preferred orientation; wherein at least 50% in volume of the first and second nano-twinned copper layer comprises plural grains.

Abstract: An interaction system is provided. The interaction system has a first mobile device, configured to capture images of a scene, and a server, configured to recognize a first electronic device from the images captured by the first mobile device, so that the first electronic device and the first mobile device interact with each other.

Abstract: A compensation method for a light emitting diode (LED) circuit including a first transistor, a second transistor, a capacitor, and a LED is illustrated. A first end as a control end of the first transistor is connected to one end of the second transistor and the capacitor, and a second end of the first transistor is connected to the LED. A width to length (W/L) ratio of the second transistor is less than one. An initial control voltage is applied to a control end of the second transistor, and the current output voltage of the LED is correspondingly measured. If a difference between the current output voltage and an initial output voltage exceeds a predetermined value, a compensation voltage, which is a summation of the initial control voltage and the difference, is applied to the control end of the second transistor.

Abstract: A semiconductor structure includes a substrate, a gate structure, and two silicon-containing structures. The substrate includes two recesses defined therein and two doping regions of a first dopant type. Each of the two doping regions extends along a bottom surface and at least portion of a sidewall of a corresponding one of the two recesses. The gate structure is over the substrate and between the two recesses. The two silicon-containing structures are of a second dopant type different from the first dopant type. Each of the two silicon-containing structures fills a corresponding one of the two recesses, and an upper portion of each of the two silicon-containing structures has a dopant concentration higher than that of a lower portion of each of the two silicon-containing structures.

Abstract: A detection method for a sensor membrane formed of europium titanium oxide as part of a biosensor by using PNIPAAm for wrapping enzymes includes adding 1.0 g of NIPAAm powder to 20 ml water, heating same at 60° C. to form NIPAAm solution, and cooling the NIPAAm solution; adding 200 ?l of 98.7 wt % of APS and 50 ?l of 99 wt % of TEMED to the NIPAAm solution, uniformly mixing same, and reacting the mixture for 30 hours to prepare a transparent, gel PNIPAAm; adding 5 mg enzymes to 100 ?l of 1×PBS buffer solution, uniformly mixing same, adding 100 ?l of PNIPAAm to the buffer solution, and uniformly mixing the buffer solution; placing a biosensor on a heater for heating at a constant temperature of 37° C. with the biosensor being an EIS sensor having a sensor membrane formed of EuTixOy; and taking a measurement.

Abstract: An LED includes a substrate and a semiconductor structure mounted on the substrate. A plurality of first holes and a plurality of second holes are defined in the semiconductor structure. The second holes are located above the first holes and communicate with the first holes. A method for manufacturing the LED is also provided.

Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 ?m to 2.5 ?m.

Abstract: A communication administration system includes: a administration system, for managing basis information of at least one user; and a service system, for fetching basic information and current location information of a called party from the administration system in response to a communication request from a calling party, obtaining current location information and preference information of the called party from the called party, and generating a communication mechanism scenario according to a communication mechanism system for the calling party to make a selection and to make a call accordingly.