Abstract: An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor region, and a germanium-containing semiconductor layer between and in contact with the silicon fin and one of the silicon oxide regions.

Abstract: A method includes forming Shallow Trench Isolation (STI) regions in a semiconductor substrate and a semiconductor strip between the STI regions. The method also include replacing a top portion of the semiconductor strip with a first semiconductor layer and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer has a first germanium percentage higher than a second germanium percentage of the second semiconductor layer. The method also includes recessing the STI regions to form semiconductor fins, forming a gate stack over a middle portion of the semiconductor fin, and forming gate spacers on sidewalls of the gate stack. The method further includes forming fin spacers on sidewalls of an end portion of the semiconductor fin, recessing the end portion of the semiconductor fin, and growing an epitaxial region over the end portion of the semiconductor fin.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: A latch mechanism capable of unlocking a first electronic module and a second electronic module separately includes an operating component, a base, a first moving component, a second moving component, a first latch component, and a second latch component. The operating component moves relative to the base along different directions to selectively drive one of the first moving component and the second moving component. When the first moving component is moved to drive the first pivoting component to pivot, the first latch component can be disengaged from the first electronic module, which unlocks the first electronic module. When the second moving component is moved to drive the second pivoting component to pivot, the second latch component can be disengaged from the second electronic module, which unlocks the second electronic module. It allows users to replace the first electronic module or the second electronic module separately.

Abstract: Semiconductor devices and methods for forming semiconductor devices are provided. A vertical channel structure extends from a substrate and is formed as a channel between a source region and a drain region. A first metal gate surrounds a portion of the vertical channel structure and has a gate length. The first metal gate has a first gate section with a first workfunction and a first thickness. The first metal gate also has a second gate section with a second workfunction and a second thickness. The first thickness is different from the second thickness, and the sum of the first thickness and the second thickness is equal to the gate length. A ratio of the first thickness to the second thickness is chosen to achieve a desired threshold voltage level for the semiconductor device.

Abstract: A pressure sensing array includes a plurality of pressure sensing units and a control unit. Each of the pressure sensing units includes a plurality of first electrode blocks and a plurality of second electrode blocks. The second electrode blocks are arranged in a staggered manner along a first direction or a second direction, in which the first direction is substantially perpendicular to the second direction. The control unit is coupled to the pressure sensing units and used for controlling the first electrode blocks and the second electrode blocks of the each of the pressure sensing units to be turned on or off respectively.

Abstract: A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having a first conduction band. A second semiconductor region is over and adjoining the first semiconductor region, wherein the second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin. The second semiconductor region also includes a wide portion and a narrow portion over the wide portion, wherein the narrow portion is narrower than the wide portion. The semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band. A third semiconductor region is over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band.

Abstract: A method for forming a semiconductor device includes forming a fin extending upwards from a semiconductor substrate and forming a sacrificial layer on sidewalls of a portion of the fin. The method further includes forming a spacer layer over the sacrificial layer and recessing the portion of the fin past a bottom surface of the sacrificial layer. The recessing forms a trench disposed between sidewall portions of the spacer layer. At least a portion of the sacrificial layer is removed, and a source/drain region is formed in the trench.

Abstract: A method includes measuring a topography of a wafer, determining that a first portion of the wafer has a greater thickness than a specified thickness. The method further includes, after measuring the wafer, performing a Chemical Mechanical Polishing (CMP) process to a first side of the wafer, and during application of the CMP process, applying additional pressure to a region of the wafer, the region comprising an asymmetric part of the wafer, the region including at least a part of the first portion of the wafer.

Abstract: A portable device can transmit information through one of a mobile phone network and an Internet, wherein the portable device includes a text-based communication module to allow a user may synchronously transmit or receive data through a local area network, wherein the data is text, audio, video or the combination thereof. The text-based communication module of the portable device includes a text-to-speech recognition module used to convert a text data for outputting the text data by vocal, and a read determination module for determining read target terminals and unread target terminals when a user of the portable phone device activates the read determination module.

Abstract: Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.

Abstract: The present invention discloses a saturated water explosive device, including a water intake pipe, a flow splitter for splitting a high-pressure liquid, a flow baffle for baffling the high-pressure liquid, a heat receiver having a cavity defined inside, a pillar connected with the heat receiver by a micro-channel wherein the high-pressure liquid is heated to be high-temperature saturated water, and a heat source for heating the cavity. High-pressure water is heated to produce high-temperature high-pressure saturated water, and then by using the saturated water explosive device of the present invention, the produced high-temperature high-pressure saturated water instantaneously explodes as being heated, and a high-temperature high-pressure steam flow is produced due to rapid vaporization, and expansion and is used as a power source.

Abstract: A semiconductor device including a Fin FET device includes a fin structure extending in a first direction and protruding from a substrate layer. The fin structure includes a bulk stressor layer formed on the substrate layer and a channel layer disposed over the bulk stressor layer. An oxide layer is formed on the substrate layer extending away from the channel layer. A source-drain (SD) stressor structure is disposed on sidewalls of the channel layer over the oxide layer. A gate stack including a gate electrode layer and a gate dielectric layer covers a portion of the channel layer and extends in a second direction perpendicular to the first direction.

Abstract: A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy comprising components of the first metal layer, second metal layer, and the semiconductor substrate.

Abstract: FETs and methods for forming FETs are disclosed. A structure comprises a substrate, a gate dielectric and a gate electrode. The substrate comprises a fin, and the fin comprises an epitaxial channel region. The epitaxial channel has a major surface portion of an exterior surface. The major surface portion comprising at least one lattice shift, and the at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the exterior surface. The gate electrode is on the gate dielectric.

Abstract: A portable device can transmit information through one of a mobile phone network and an Internet, wherein the portable device includes a text-based communication module to allow a user may synchronously transmit or receive data through a local area network, wherein the data is text, audio, video or the combination thereof. The text-based communication module of the portable device includes a text-to-speech recognition module used to convert a text data for outputting the text data by vocal, and a read determination module for determining read target terminals and unread target terminals when a user of the portable phone device activates the read determination module.

Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.

Abstract: A method for preparing a precursor of gene expression probe is revealed. First prepare 2-deoxy-2-fluoro-3,5-di-O-benzoyl-?-D-arabinofuranosyl bromide and 2,4-bis-O-(trimethylsilyl)-5-bromouracil respectively. Then use 2-deoxy-2-fluoro-3,5-di-O-benzoyl-?-D-arabinofuranosyl bromide and 2,4-bis-O-(trimethylsilyl)-5-bromouracil to perform a coupling reaction and get a 1-(3,5-di-O-benzoyl-2-deoxy-2-fluoro-?-D-arabinofuranosyl)-5-bromouracil. Next use 1-(3,5-di-O-benzoyl-2-deoxy-2-fluoro-?-D-arabinofuranosyl)-5-bromouracil generated and hexabutylditin to perform a substitution reaction in an anhydrous 1,4-dioxane solution and get 1-(3,5-di-O-benzoyl-2-deoxy-2-fluoro-?-D-arabinofuranosyl)-5-tributylstannyl)uracil. At last carry out debenzoylation of 1-(3,5-di-O-benzoyl-2-deoxy-2-fluoro-?-D-arabinofuranosyl)-5-tributylstannyl)uracil to get 5-tributylstannyl-1-(2-deoxy-2-fluoro-?-D-arabinofuranosyl)uracil (FSAU), a precursor of gene expression probe.

Abstract: Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.