Abstract: A package structure is provided. The package structure includes a redistribution structure and a semiconductor chip over the redistribution structure. The package structure also includes an adhesive element over the semiconductor chip. Opposite outermost edges of the adhesive element are laterally between opposite outermost edges of the redistribution structure. The package structure further includes a protective layer laterally surrounding the semiconductor chip and the adhesive element. In addition, the package structure includes a thermal conductive element over the semiconductor chip. The thermal conductive element is surrounded by the adhesive element.

Abstract: An electric nail gun includes a cylinder unit, a valve, an actuating member, a safety assembly and an adjusting assembly. The cylinder unit defines a cylinder space and a gas space. The valve is disposed between the cylinder space and the gas space, and is movable among a closed position, in which the valve closes the cylinder space, and a plurality of open positions. The safety assembly has a pressing portion that is adapted to be pressed and moved by an object, and an actuating portion that cooperates with the actuating member to define a first actuating distance in a first direction therebetween. When the pressing portion is moved by the object, the actuating member is urged to move by the actuating portion such that the valve moves from the closed position to one of the open positions. The adjusting assembly is operable to adjust the first actuating distance.

Abstract: A method includes depositing an inter-layer dielectric (ILD) over a source/drain region; forming a contact opening through the ILD, wherein the contact opening exposes the source/drain region; forming a metal-semiconductor alloy region on the source/drain region; depositing a first layer of a conductive material on the metal-semiconductor alloy region; depositing an isolation material along sidewalls of the contact opening and over the first layer of the conductive material; etching the isolation material to expose the first layer of the conductive material, wherein the isolation material extends along sidewalls of the contact opening after etching the isolation material; and depositing a second layer of the conductive material on the first layer of the conductive material.

Abstract: Provided is a post-treatment method and system for a core-shell catalyst, which relate to the field of fuel cell materials. The post-treatment method of the present disclosure includes the following steps: a core-shell catalyst is added into an electrolyte solution containing citric acid or ethylenediamine tetraacetic acid, a gas containing oxygen is introduced into the electrolyte solution followed by stirring for a predetermined reaction time, the open circuit potential of the reactor base is recorded during the reaction time, and the open circuit potential should stabilize at 0.90˜1.0 V vs. RHE when the reaction is completed. The molar ratio of citric acid or ethylenediamine tetraacetic acid to platinum of the core-shell catalyst is 10 to 1000:1. A percentage of oxygen in the gas is 10 to 100% by volume. The post-treatment method of the present disclosure can significantly improve the platinum mass activity and PGM mass activity and durability of core-shell catalyst.

Abstract: Systems for unlocking and locking a riser cage to a computing device are described herein. Such systems may include: a riser cage in a computing device; an axis member coupled to a first side of the riser cage and adapted to rotate about an axis; a handle coupled to the axis member and adapted to rotate the axis member about the axis; a cam, coupled to the axis member, and adapted to rotate about the axis when the axis member rotates; and a lever coupled to a second side of the riser cage and adapted to rotate about a pivot point when the cam rotates, wherein the lever engages with a stabilizing feature when the handle is in a first handle position.

Abstract: A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

Abstract: A semiconductor die may include metal interconnect structures located within interconnect-level dielectric material layers, bonding pads located on a topmost interconnect-level dielectric material layer, a dielectric passivation layer located on the topmost interconnect-level dielectric material layer, and metal bump structures extending through the dielectric passivation layer and located on the bonding pads. Each of the metal bump structures comprises a contoured bottom surface including a bottommost surface segment in contact with a top surface of a respective one of the bonding pads, a tapered surface segment in contact with a tapered sidewall of a respective opening through the dielectric passivation layer, and an annular surface segment that overlies the dielectric passivation layer and having an inner periphery that is laterally offset inward from an outer periphery by a lateral offset distance that is at least 8% of a width of a respective underlying one of the bonding pads.

Abstract: A micro-light-emitting diode (microLED) display panel includes a substrate; a plurality of microLEDs disposed and arranged in rows and columns on the substrate; a driver disposed on the substrate; a plurality of first blocking walls respectively disposed between rows of the microLEDs; and a plurality of second blocking walls respectively disposed between the microLEDs of the same row.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary method includes forming a fin-shaped structure extending from a front side of a substrate, recessing a source region of the fin-shaped structure to form a source opening, forming a semiconductor plug under the source opening, exposing the semiconductor plug from a back side of the substrate, selectively removing a first portion of the substrate without removing a second portion of the substrate adjacent to the semiconductor plug, forming a backside dielectric layer over a bottom surface of the workpiece, replacing the semiconductor plug with a backside contact, and selectively removing the second portion of the substrate to form a gap between the backside dielectric layer and the backside contact. By forming the gap, a parasitic capacitance between the backside contact and an adjacent gate structure may be advantageously reduced.

Abstract: A package structure and a formation method of a package structure are provided. The method includes placing a semiconductor die over a redistribution structure and placing a conductive feature over the redistribution structure. The conductive feature has a support element and a solder element. The solder element extends along surfaces of the support element. The method also includes stacking an interposer substrate over the redistribution structure. The interposer substrate extends across the semiconductor die. The method further includes forming a protective layer to surround the conductive feature and the semiconductor die.

Abstract: Semiconductor devices and methods of manufacturing are provided, wherein a first passivation layer is deposited over a top redistribution structure; a second passivation layer is deposited over the first passivation layer; and a first opening is formed through the second passivation layer. After the forming the first opening, the first opening is reshaped into a second opening; a third opening is formed through the first passivation layer; and filling the second opening and the third opening with a conductive material.

Abstract: A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.

Abstract: Disclosed is a warpage suppressing reflow oven, which comprises a reflow oven body, where a perforated steel plate circulating device comprising a perforated steel plate is disposed at a reflow-oven inner oven. A plurality of downdraft modules is arranged in the perforated steel plate, and the downdraft acting forces thereof face the upper panel. More than one air extractor is communicated with the plurality of downdraft modules via a plurality of pipelines. Under actuation of the air extractors, the downdraft modules generate downdraft acting forces to the bottom surfaces of the products, so that the products are flatly attached to the universal perforated carriers without warpage in a heat soldering process. Thereby, more uniform heating of the products and better contact of solder joints and effectively improving the yield of reflow soldering operations are achieved.

Abstract: Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes receiving a fin-shaped structure comprising a first channel region and a second channel region, a first and a second dummy gate structures disposed over the first and the second channel regions, respectively. The method also includes removing a portion of the first dummy gate structure, a portion of the first channel region and a portion of the substrate under the first dummy gate structure to form a trench, forming a hybrid dielectric feature in the trench, removing a portion of the hybrid dielectric feature to form an air gap, sealing the air gap, and replacing the second dummy gate structure with a gate stack after sealing the air gap.

Abstract: A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

Abstract: An artificial intelligence-based audio processing method includes: obtaining an audio clip of an audio scene, the audio clip including noise; performing audio scene classification processing based on the audio clip to obtain an audio scene type corresponding to the noise in the audio clip; and determining a target audio processing mode corresponding to the audio scene type, and applying the target audio processing mode to the audio clip of the audio scene according to a degree of interference caused by the noise in the audio clip.

Abstract: An electronic device for updating on-board data of power off status is provided, which combines a rewritable memory, an embedded controller, and a second network socket onto a motherboard. The rewritable memory includes a target storage area. The embedded controller includes a second network interface electrically connected to the second network socket, for receiving a writing command and a binary file. After receiving power of a standby mode, the embedded controller executes a data writing program to receive the writing command and the binary file via the second network socket and the second network interface, and writes the binary data file into the target storage area of the rewritable memory by using the data writing program.

Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: A business data processing system performing communication with a user device and a finance end device is provided. The business data processing system includes a data organizing subsystem and a data evaluation subsystem. The data organizing subsystem receives documents of a cargo transport task provided by the user device, and recognizes and organizes the contents of the documents. The data evaluation subsystem analyzes the contents of the documents to generate an evaluation of the transport task. The business data processing system transmits the evaluation of the transport task to the finance end device.