Abstract: A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate.

Abstract: A semiconductor device provides a high breakdown voltage and a low turn-on resistance. The device includes: a substrate; a buried n+ layer disposed in the substrate; an n-epi layer disposed over the buried n+ layer; a p-well disposed in the n-epi layer; a source n+ region disposed in the p-well and connected to a source contact on one side; a first insulation layer disposed on top of the p-well and the n-epi layer; a gate disposed on top of the first insulation layer; and a metal electrode extending from the buried n+ layer to a drain contact, wherein the metal electrode is insulated from the n-epi layer and the p-well using by a second insulation layer.

Abstract: The present invention provides biomarkers for detecting kidney disease, selected from the oligonucleotide sequence, complementary sequence or derivatives, amino acid sequence or derivatives, fragment, variants, antibody of annexin A2 or S100A6 or combinations thereof. Moreover, the present invention also provides an assay kit and a method for kidney disease detecting, practically for the kidney disease resulting from acute tubular necrosis.

Abstract: Disclosed are an Schisandrae fructus extract for inhibition or prevention of influenza and its application, wherein the Schisandrae fructus extract is obtained by water, methanol, or ethanol extraction process and the extract comprises compounds such as schisandrone, benzoylgomisin P, wulignan A1, epigomisin O, epiwulignan A1, and tigloylgomisin P. The extracts and purified compounds of Schisandrae fructus has anti-influenza virus H1N1 and H1N1-TR (a Tamiflu drug resistant virus strain) activities, therefore the extracts and the purified compounds of Schisandrae fructus can be applied as an inhitibory agent of a pharmaceutical composition for treatment or prevention agent for influenza infection.

Abstract: A tunable voltage-controlled pseudo-resistor structure, comprising: a symmetric PMOS transistor circuit and an auto-tuning circuit connected in series. Input of the auto-tuning circuit is connected to a central position Vf of the PMOS transistor circuit having its output Vg, with its purpose of keeping Vg?Vf at a constant value. The PMOS transistor circuit may produce body effect through various different bulk voltages. Through the auto-tuning circuit, Vg and Vf are kept constant to make current of transistor to produce compensation effect, such that regardless of Va>Vb or Va<Vb, a large resistance is maintained. Through utilizing the tunable voltage-controlled pseudo-resistor structure, constant resistance can be maintained under high input voltage, hereby reducing drifting of common-mode voltage, in achieving a superior resistance effect.

Abstract: The present invention provides biomarkers for detecting kidney disease, selected from the oligonucleotide sequence, complementary sequence or derivatives, amino acid sequence or derivatives, fragment, variants, antibody of annexin A2 or S100A6 or combinations thereof. Moreover, the present invention also provides an assay kit and a method for kidney disease detecting, practically for the kidney disease resulting from acute tubular necrosis.

Abstract: A service providing apparatus, a service consuming apparatus, and a service transmitting method thereof are provided. The service providing apparatus is able to pre-allocate a plurality of service consuming apparatus into different groups, to pre-schedule the groups in a control channel, and to pre-schedule the groups in at least one channel. Accordingly, the channel resource can be consumed more efficiently by the service consuming apparatus.

Abstract: Disclosed are an Schisandrae fructus extract for inhibition or prevention of influenza and its application, wherein the Schisandrae fructus extract is obtained by water, methanol, or ethanol extraction process and the extract comprises compounds such as schisandrone, benzoylgomisin P, wulignan A1, epigomisin O, epiwulignan A1, and tigloylgomisin P. The extracts and purified compounds of Schisandrae fructus has anti-influenza virus H1N1 and H1N1-TR (a Tamiflu drug resistant virus strain) activities, therefore the extracts and the purified compounds of Schisandrae fructus can be applied as an inhitibory agent of a pharmaceutical composition for treatment or prevention agent for influenza infection.

Abstract: In a reflow process, a plurality of solder bumps between a first workpiece and a second workpiece is melted. During a solidification stage of the plurality of solder bumps, the plurality of solder bumps is cooled at a first cooling rate. After the solidification stage is finished, the plurality of solder bumps is cooled at a second cooling rate lower than the first cooling rate.

Abstract: A method for decentralized transportation dispatching is disclosed. The method bypasses utilizing a centralized dispatch call center and includes announcing a transportation requirement via broadcasting directly by at least one user, and replying to the transportation requirement with a plurality of competitive bidding information directly from a plurality of transportation providers who are capable of providing a passenger-carrying service or providing a goods-carrying service. The method further includes selecting one transportation provider from the transportation providers according to a request from the user, in which the selecting is performed through referencing the bidding information replied to by the transportation providers.

Abstract: Disclosed are 4,5-diamino-3-halo-2-hydroxybenzoic acid derivatives and manufactures thereof. The 4,5-diamino-3-halo-2-hydroxybenzoic acid derivatives are presented by formula (I): wherein R1 group is H, CH3, or C2H5; R2 group is H, or Br; R3 group is CH3, or C3H7; and R4 group is H, or C(?NH)—NH2. 4,5-diamino-3-halo-2-hydroxybenzoic acid derivatives provided here were non-toxic to MDCK cells, particularly compounds 6a, 6b, 6c, 6e, 6f, 7a, 7b and 8 had better anti-H1N1 activity. In the future, these compounds can be used to focus on viral neuraminidases as targets to develop effective anti-influenza drugs.

Abstract: A service providing apparatus, a service consuming apparatus, and a service transmitting method thereof are provided. The service providing apparatus is able to pre-allocate a plurality of service consuming apparatus into different groups, to pre-schedule the groups in a control channel, and to pre-schedule the groups in at least one channel. Accordingly, the channel resource can be consumed more efficiently by the service consuming apparatus.

Abstract: A method for determining pressed locations of a touch screen, suitable for an electronic device having the touch screen, is provided. In the present method, coordinates and pressure values of m samples where the touch screen is pressed are detected. Then, the pressure values of those samples are compared to find n samples with the highest pressure values. Finally, the coordinates of those n samples are averaged for determining the pressed location of the touch screen. Accordingly, the accuracy of determining the pressed location of the touch screen can be increased and the convenience for operating the electronic device is enhanced.

Abstract: The invention provides a method of repairing the pixel structure, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is then electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current provided by the power line. The invention provides a method of repairing the organic electro-luminescence display unit, suitable for repairing the above-mentioned organic electro-luminescence display unit, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current passing through the organic electro-luminescence layer.

Abstract: The present invention relates to a height adjustment ring spacer, including a ring-type gasket with at least one upper ring body and one lower ring body, in which plural staircase-type ladders formed in a side of each of the upper ring bodies and a side of each of the lower ring bodies make the ladders of the upper ring body and the lower ring body individually be placed at different linking engagements to increase or decrease the height in circumferential direction; the features of the present invention are that: there are a recess formed in every ladder of the above upper ring body, and a convex body formed in every ladder of the lower ring body, thus the recess of the upper ring body and the convex body of the lower ring body relatively plug and link each other to avoid the relative movement in circumferential and radial direction therein.

Abstract: A method for controlling mask fabrication is provided, wherein the method uses statistical process control analysis. A manufacturing model is defined. A process run of a mask is performed as defined by the manufacturing model. A fault detection analysis is performed to reduce a bias in the manufacturing model. A fine-tuning signal is generated in response to a result of the fault detection analysis. The process run operation is adjusted according to the fine-tuning signal.

Abstract: An integrated circuit device and method for fabricating the integrated circuit device is disclosed. In an embodiment, an apparatus includes a substrate having a first surface and a second surface, the second surface being opposite the first surface; a first device and a second device overlying the substrate; and an isolation structure that extends through the substrate from the first surface to the second surface and between the first device and the second device.

Abstract: A semiconductor device is provided that, in an embodiment, is in the form of a high voltage MOS (HVMOS) device. The device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. The gate structure includes a gate dielectric which has a first portion with a first thickness and a second portion with a second thickness. The second thickness is greater than the first thickness. A gate electrode is disposed on the first and second portion. In an embodiment, a drift region underlies the second portion of the gate dielectric. A method of fabricating the same is also provided.

Abstract: A SRAM architecture includes a read/write control signal, a read/write control transistor block, an equalize transistor block, a 6-T SRAM cell, a sense amplifier block, a column selection transistor block and a write driver. The 6-T SRAM cell can store and write data. The sense amplifier block is used to read out the data stored in the 6-T SRAM cell correctly when the SRAM architecture performs a read operation and makes bit lines BL (bit line) and BLB( bitline) produce a minimum voltage difference. The column selection transistor block is used to select a column that the data is written in and read out. The write driver is used to perform a write operation to the 6-T SRAM cell of the column. The SRAM architecture can effectively increase the read SNM and dramatically reduce the power consumption.

Abstract: A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type.