Abstract: A weight estimating system and a weight estimating method are proposed for products of orders. The weight estimating system includes an order database for storing order related data for clients; a pallet database for storing pallet weights and product quantities per pallet; a declaration product list database for storing data required for declaration; a data inputting module for allowing a user to establish the order and pallet databases and select an order to be declared; a weight estimating module for calculating estimated product weights of each order; and a data accessing module for storing the estimated product weights of each order calculated by the weight estimating module into the order database, the estimated product weights serving as reference for declaration. This avoids delay of the time of declaration and delay of export of products due to failure in timely measuring weights of the products.

Abstract: A substituted oligofluorene for organic light-emitting diode (OLED) and organic photoconductor (OPC) has a chemical structure of: wherein X and Y are an integer of 0 or 1, G1 and G2 are independently of either CnH2n+1 or CnH2n+1O; and n is an integer of 0 to 16.

Abstract: A sampling clock generating device for a burst cutting area (BCA) of an optical disc is disclosed including: a detecting device for detecting a specific pulse period of a BCA reproducing signal reproduced from the BCA; and a clock generator electrically connected to the detecting device for generating a sampling clock according to the detected specific pulse period.

Abstract: The present invention provides methods for inhibiting metastasis of malignant tumors and growth of leukemic cells, which comprise administering a pharmaceutically effective amount of nano-gold. The present invention also provides pharmaceutical compositions, which comprise a pharmaceutically effective amount of nano-gold and are useful in inhibiting metastasis of malignant tumors and growth of leukemic cells.

Abstract: A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.

Abstract: A method for inhibiting replication of reverse transcriptase dependent virus in plant or animal cells, comprising the step of administering to said cells a compound that depletes the intracellular pool of deoxyribonucleoside phosphate in an amount effective to inhibit replication of said virus. Hydroxyurea is one such suitable compound. Also disclosed is a method for producing incomplete reverse- transcriptase dependent viral DNA, by administering a deoxyribonucleoside phosphate-depleting drug to cells infected with such a virus.

Abstract: A multi-function digital video optical disc player includes a housing; an optical disc drive installed inside the housing for reading a first video data from an optical disc; a tape drive installed inside the housing for reading a DV tape to retrieve a second video data complying with a first data format; a video data format converter installed inside the housing for converting the second video data into a third video data complying with a second data format and for outputting the third video data; a decoder installed in the housing for decoding the first or the third video data to generate a fourth video data; and a display controller installed inside the housing for outputting display data to an external monitor according to the fourth video data.

Abstract: An apparatus for writing data to an optical storage media and a servo control unit and a laser diode driver unit thereof. The apparatus making a laser diode emit light includes a servo control unit and a laser diode driver unit. The servo control unit includes a control unit for controlling a burning procedure and a modulation unit for outputting an encoded signal. The laser diode driver unit receives the encoded signal and includes a PLL unit, a write strategy generation unit and a lock/unlock detection unit. The PLL unit outputs at least one of a second clock signal and a second data signal according to the encoded signal. The write strategy generation unit outputs a control signal to control the laser diode according to the second clock signal and the second data signal. The lock/unlock detection unit outputs a lock indicator or an unlock indicator to the control unit.

Abstract: A method for manufacturing a pixel electrode contact structure of a thin-film transistors liquid crystal display is disclosed. First, a transparent substrate having a first insulating layer thereon is provided. Afterward, a first metal layer and a second metal layer are sequentially formed on the substrate and then be patterned by a halftone technology and an etching process, wherein the second metal layer is removed within the pixel electrode contact area. In the meantime, the drain lines of the thin-film transistor comprising the first metal layer and the second metal layer are formed. Next, a patterned passivation layer is formed on the substrate. Finally, a pixel electrode layer directly connecting the first metal layers within the pixel electrode contact structure is formed on the substrate. This invention provides the pixel electrode contact structure with low contact resistance and prevents the current leakage from the drain line to the storage capacitor.

Abstract: A program verification method for a memory device having a virtual array including a plurality of memory cells determines if leakage current passes through one or more neighboring memory cells to the programmed memory cell. The programmed memory cell is verified based on a first threshold state if leakage current is determined to pass through one or more neighboring memory cells. The programmed memory cell is verified based on a second threshold state if the leakage current is not determined to pass through one or more neighboring memory cells.

Abstract: A memory device is disclosed that includes a plurality of word lines and a plurality of memory cells operating in one of a plurality of modes and coupled to at least one of the word lines. The memory device also includes a plurality of reference lines and reference cells. Each reference cell corresponds to one of the operating modes, supplies a reference current for the corresponding mode, and is coupled to at least one of the reference lines. A reference cell current from a reference cell can also be compared to a target range and, if outside the target range, the voltage level on a corresponding referece line can be adjusted accordingly such that the reference current falls within the target range (i.e., reference current trimming).

Abstract: A method for decoding multiword information comprises steps (a) to (h). In step (a), a multiword information cluster including high protective words and low protective words is provided, wherein the multiword information, high protective words and low protective words can be ECC data, BIS data and LDC data, respectively. In step (b), the low protective words are partitioned into multiple groups. In step(c), the low protective words are de-interleaved, so as to generate a low protective word cluster including multiple segments corresponding to the multiple groups. In step (d), any error of the low protective words is detected, so as to generate segment erasure indicators with localities. In step (e), the low protective words and the segment erasure indicators are stored into a first memory, e.g., a DRAM. In step (f), the segment erasure indicators are stored into a second memory, e.g., a SRAM. In step (g), erasure bits of the low protective word are generated based on the segment erasure indicators.

Abstract: A digital sum variation (DSV) computation method and system is proposed, which is capable of determining the DSV value of a bit stream of channel-bit symbols to thereby find the optimal merge-bit symbol for insertion between each succeeding pair of the channel-bit symbols. This DSV computation method and system is characterized in the use of a Zero Digital Sum Variation (ZDSV) principle to determine the DSV. This DSV computation method and system can find the optimal merge-bit symbol for insertion between each succeeding pair of the channel-bit symbols in a more cost-effective manner with the need for a reduced amount of memory and utilizes a lookup table requiring a reduced amount of memory space for storage so that memory space can be reduced as compared to the prior art. This DSV computation method and system is therefore more advantageous to use than the prior art.

Abstract: A NROM memory device includes an array of memory cells and first and second bit lines. The first and second bit lines are coupled to opposite sides of the memory cells. During an erase operation, one of the sides of the memory cells receives a positive voltage and the other side couples to a common node or a limited current source. Methods are also disclosed that can easily screen for marginal memory cells based on a threshold voltage distribution of the memory cells.

Abstract: A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed by ion implanting. Therefore, compressive stress and tensile stress occur on the high stress layer. According the disclosed method, the high stress layer may simultaneously improve the characteristics of the transistors formed on the same wafer. Further, the mobility of the carriers of the device is enhanced.

Abstract: A path metric computing method applied in a high-speed Viterbi detector and related apparatus thereof are disclosed. The path metric computing apparatus includes a comparator for generating a control signal according a plurality of previous path metrics, a combining circuit for generating a plurality of first output values according to the previous path metrics and branch costs of a plurality of branches of a current state, and a multiplexer, electrically connected to the comparator and the combining circuit, for determining a first path metric of the current state according to the control signal and the output values.

Abstract: A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed by ion implanting. Therefore, compressive stress and tensile stress occur on the high stress layer. According the disclosed method, the high stress layer may simultaneously improve the characteristics of the transistors formed on the same wafer. Further, the mobility of the carriers of the device is enhanced.

Abstract: Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein.

Abstract: A method of recording data on an optical storage medium writes different types of data to the same area on the optical storage medium. The data to be written are successively stored in a data buffer in accordance with the sequence of the identification data of a data sector. The same area can be a lead-in area, a data area or a lead-out area. Therefore, a recording circuit can read out the data from the data buffer in accordance with the sequence of corresponding identification data and write them to corresponding tracks on the optical storage medium.

Abstract: A method utilized for detecting a physical mark in a signal read from an optical disc, including: generating a matching signal capable of being utilized to identify the physical mark according to a reference clock and a wobble clock; generating a comparison signal by comparing the matching signal and a wobble data signal; determining whether a period of which the level of the comparison signal surpass a predetermined level within a predetermined period is greater than a threshold or not; and if the period greater than the threshold, generating an indication signal corresponding to the location of the physical mark. Wherein the wobble data signal and the wobble clock is generated according to the read back signal.