Abstract: A method that initiates call blocking responsive to a call-quality measurement of the forward link. The call-quality measurement is a measurement of how well a mobile terminal is able to receive the forward link. One call-quality measurement is a pilot fraction of the forward link, which is a ratio of the pilot's power level to the power level of a set of forward-link signals of a base station. Call blocking is initiated when an average pilot fraction is below a pilot-fraction blocking threshold. The pilot's power level is obtained for a time period, and the signal set's power level is obtained for the same time period. The pilot fraction is determined for the time period, and then used to determine the average pilot fraction for the time period. The average pilot fraction for the current time period is based on a pilot fraction for the current time period, and an average pilot fraction for a previous time period.

Abstract: A circuit and method for protecting the run length in RLL (run length limited) code is proposed to correct the illegal run length in an EFM (eight to fourteen modulation) signal. The proposed circuit comprises a sampling unit for sampling a RF signal with a high frequency sampling clock, and generating a high frequency sampling signal. The frequency of the high frequency sampling clock is higher then the frequency of the EFM signal. A detector is employed to receive and to detect the high frequency sampling signal whether there is any illegal run length in the EFM signal, and to generate control signals. Two reference signal generators are employed to generate an ideal front reference signal and an ideal rear reference signal, respectively, corresponding to the control signals. A first difference generator and a second difference generator are employed to generate a first difference and a second difference according to the front and rear reference signals and the high frequency sampling signal, respectively.

Abstract: In a system of communication, a sending node sends a message to a receiving node, which NAKs unsuccessful transmissions. The sending node screens the NAKs to determine if they were sent before the receiver could receive previous transmissions of the same data NAKed. One screening technique is based on an estimated round trip time of a message. Another alternate technique looks a flag in the NAK that synchronizes the sender and the receiver.

Abstract: A method of fabricating a DRAM capacitor uses tungsten nitride in the process of forming a capacitor. The structure of the capacitor is simple and the process is easily executed. Furthermore, the invention provides a method of forming tungsten nitride, comprising a step of implanting nitrogen into a tungsten silicide layer and a step of executing a rapid thermal process under ammonia gas to form a tungsten nitride layer on the surface of the tungsten silicide layer. The method of fabricating a DRAM capacitor comprises forming the tungsten silicide layer after forming a part smaller than a bottom electrode of the capacitor from doped polysilicon and forming tungsten nitride on the surface of the tungsten nitride layer.

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract: A method is directed to forming a barrier layer, particularly suitable for use in a copper fabrication process. A substrate is provided. A conductive structure layer may have already been formed on the substrate. An inter-metal dielectric layer is formed over the substrate. The inter-metal dielectric layer is then patterned to form an opening that exposes the substrate. An oxygen getter layer is formed over the inter-metal dielectric layer and the opening. A barrier layer is formed on the oxygen getterlayer. A copper layer is deposited over the barrier layer. An oxidation of the oxygen getter layer is occurred in the subsequent high temperature steps. An oxide layer, serving as another barrier layer, is formed thereon. The oxygen getter layer includes any metal which can easily react with oxygen, such as titanium or tantalum.

Abstract: Methods and devices for selectively highlighting one or more regions of arbitrary shape on a display. The method for creating highlight effects in multimedia data (data including video and/or graphics, for example) includes the steps of receiving a video and/or graphics data stream from an input source; performing an arithmetic operation upon at least one color component value of constituent pixels of the data stream that are to be hightlighted to provide a selectively highlighted video and/or graphics data stream; and outputting the selectively highlighted video and/or graphics data stream directly to a display. The arithmetic operation may include addition or subtraction. Because the original multimedia data in memory is not modified or copied in order to create the highlight effects, both memory bandwidth and area are saved. Moreover, once highlighting is turned off, the original (non-highlighted) data may be immediately re-displayed.

Abstract: The present invention provides a method for forming low dielectric constant layer in a semiconductor device comprising providing the semiconductor device. A dielectric layer is formed on the semiconductor device, which has a constituent of a plurality of unsaturated carbon bonds compounds. The dielectric layer is then treated with hydrogen. The purpose of treatment of hydrogen is to form saturated carbon bonds compounds for unexhausted unsaturated carbon bonds in the dielectric layer.

Abstract: A method and apparatus that can cancel the non-orthogonal code channel signals to minimize the interference in the detection for desired signals, first uses the channel estimate via pilot signal to reconstruct the signal at non-orthogonal code channel (e.g., SCH), then removes (subtracts) the reconstructed signal from the received signal before the decoding and detection of other code channels. The cancellation of interference from non-orthogonal signal can significantly improve the performance of the detection of the desired signal (user data or broadcast data) and thus more system capacity can be obtained.

Abstract: A method for manufacturing dual damascene structure is disclosed. A dielectric layer is formed over a substrate having a conductive region. A dual damascene process is carried out to form a trench and a via openings exposing the conductive region in the openings. Sequentially a first barrier metal layer, a second barrier metal layer comprised of tungsten material, and a seed layer are formed over the dielectric layer and covering the sidewalls and the bottom of the trench and the via openings. A conductive metal layer is then blanket deposited over the dielectric layer and the top surface is planarized to remove portions of the conductive metal layer, the seed layer, the second barrier metal layer, and the first barrier metal layer until the dielectric layer is exposed.

Abstract: The present invention is a more accurate system for estimating the location of a mobile-telephone without significantly increasing the interference level for other mobile-telephones in the same or neighboring cells. In one embodiment, the present invention uses a plurality of location terminals deployed throughout a cell to increase the chances of detecting line-of-sight signals and the signal-to-noise ratio at the location terminals. In this embodiment, a wireless communication network transmits receive information to the plurality of location terminals instructing each of the location terminals to receive a signal from a particular mobile-telephone. Specifically, the location terminal is instructed to monitor a specific communication channel during a specific time interval.

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract: An apparatus for performance improvement of a digital wireless receiver, having a plurality of signals, has a processing circuit and a weight generation circuit. The processing circuit provides a processed signal, wherein a plurality of weights is applied to a plurality of signals producing a plurality of weighted signals and the plurality of weighted signals are combined to provide the processed signal. In the weight generation circuit the plurality of weights are generated as a function of a conjugate of channel estimate of a corresponding signal of the plurality of signals and a variance of the corresponding signal. A method implementing the present invention is also described.

Abstract: A method for forming metal interconnects. A substrate having a metal line is provided. A dielectric layer with an opening exposing the metal line is formed over the substrate, which dielectric layer further comprises an etching stop layer. After forming a covering layer conformal to a profile of the opening over the substrate, a portion of the covering layer in a bottom of the opening is removed to expose the metal line. A conformal barrier layer and a metal layer are formed sequentially in the opening and the metal layer fills up the opening. After forming a cap layer covering the substrate, the cap layer and the dielectric layer are defined to form a second opening. Next, remove the dielectric layer exposed by the opening, thus forming air-gaps.

Abstract: A method of fabricating a DRAM capacitor uses tungsten nitride in the process of forming a capacitor. The structure of the capacitor is simple and the process is easily executed. Furthermore, the invention provides a method of forming tungsten nitride, comprising a step of implanting nitrogen into a tungsten silicide layer and a step of executing a rapid thermal process under ammonia gas to form a tungsten nitride layer on the surface of the tungsten silicide layer. The method of fabricating a DRAM capacitor comprises forming the tungsten silicide layer after forming a part smaller than a bottom electrode of the capacitor from doped polysilicon and forming tungsten nitride on the surface of the tungsten nitride layer.

Abstract: In a recordable disk recording controller circuit, a data buffer manager receives a command and sends the command to a micro-controller. The micro-controller generates a set of register batches from each command and sends the register data and index of the register batch to a batch register controller. The batch register controller receives the register data and index of the register batch from the micro-controller and stores the received register data and index of the register batch in a batch buffer. The batch register controller retrieves the register batches from the batch buffer and writes the master registers of an encoder controller based on the register index and register data of the register batches after the master registers of the encoder controller are updated into the slave registers of the encoder controller. The encoder controller generates control signals to a recording circuit depending on updated slave registers.

Abstract: A method for manufacturing the lower electrode of a DRAM capacitor. The method includes depositing polysilicon instead of amorphous silicon to form the lower electrode. Because polysilicon has a higher depositing temperature, it has a higher depositing rate capable of shortening depositing time. After forming the polysilicon lower electrode, the upper portion of the polysilicon layer is transformed into an amorphous layer by bombarding the polysilicon layer with ions to damage its internal structure. Eventually, hemispherical grain silicon is able to grow over the lower electrode, thereby increasing its surface area.

Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Abstract: Disclosed is a method for producing a flame retardant polycarbonate resin composition by using a screw extruder, which comprises extruding a resin component (mainly comprising a polycarbonate) and an organic phosphorus compound having an acid value of not more than 0.1 mg KOH/g while kneading, wherein the temperature of the resin component in the extruder is not higher than 300° C., and the residence time of the resin component in the extruder is not more than 40 seconds.

Abstract: The wireless CDMA system includes a base station which generates a configuration channel as one of the forward control channels. The message slots in the configuration channel only include overhead messages. The base station also generates at least one other forward control channel, but these other forward control channels do not need to include overhead messages in any of their message slots. The mobiles in the system determine the location of the configuration channel from information in a sync channel generated by the base station. By camping onto the configuration channel, a mobile can quickly obtain the overhead parameters in the overhead messages. Because obtaining overhead parameters and keeping an updated version of the overhead parameters is an important factor in overall performance, the significant decrease in overhead message access time provided by the provision of the configuration channel greatly improves performance.