Abstract: An update control apparatus in a DLL circuit is provided. The update control apparatus includes a logic value determination, a phase information collection unit, and an update control unit. The logic value determination unit is configured to determine a logic value of a phase detection signal for a first period interval of a reference clock signal to generate a phase information signal, and configured to extend the first period interval into a second period interval when an extension instruction signal is enabled. The phase information collection unit is configured to determine consecutive logic values of an update possible signal to generate the extension instruction signal, and configured to collect the phase information signal to generate an update information signal. The update control unit is configured to generate the update possible signal, a valid interval signal, and an update control signal in response to the update information signal.

Abstract: Various embodiments of a semiconductor integrated circuit. According to one exemplary embodiment, a semiconductor integrated circuit includes a multi-phase clock generator that is configured to generate a multi-phase internal clock; a first edge combining unit that is configured to generate a first output clock having a first frequency by combining rising edges of clocks included in the internal clock, and transmit the first output clock to a first port; and a second edge combining unit that is configured to generate a second output clock having a second frequency by combining rising edges of clocks included in the internal clock, and transmit the output clock to a second port.

Abstract: A power-down mode control apparatus includes an internal power-down control block configured to receive a locking completion signal and to generate an internal power-down signal, which is toggled for a predetermined time; a noise check block configured to check occurrence/non-occurrence of noise on the basis of a phase detection signal and to generate a plurality of power-down selection signals in response to the locking completion signal and the internal power-down signal; and a power-down enter control block configured to generate a plurality of power-down enter signals, which instruct individual circuits to enter a power-down mode in response to a reference clock signal, the plurality of power-down selection signals, a power-down mode signal, and the internal power-down signal.

Abstract: A phase synchronization apparatus includes a bias control unit configured to sequentially delay an input clock signal to generate bias control signals having multiple bits, a bias generation unit configured to generate a pull-up bias voltage having a level that corresponds to logical values of the bias control signals, and to generate a pull-down bias voltage in response to a control signal; and a voltage controlled oscillator configured to include a plurality of delay cells respectively having a pull-up terminal and a pull-down terminal to generate an output clock signal in response to the control voltage, wherein the pull-up bias voltage is supplied to the pull-up terminals of the respective delay cells and the pull-down bias voltage is supplied to the pull-down terminals of the respective delay cells.

Abstract: A clock receiver in a semiconductor integrated circuit includes a first clock buffer configured to buffer an external clock to generate a low frequency buffered clock in response to a first operation signal; a second clock buffer configured to buffer the external clock to generate a high frequency buffered clock in response to a second operation signal; and an internal clock generating unit configured to receive the low frequency buffered clock and the high frequency buffered clock, to control states of the first operation signal and the second operation signal and to generate an internal clock.

Abstract: A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.

Abstract: A semiconductor integrated circuit includes a frequency determining unit configured to determine an operational speed of the semiconductor integrated circuit and to generate a frequency region signal; a duty cycle control unit configured to detect a duty cycle of a DLL clock and to generate a duty cycle control signal; a duty cycle correcting unit configured to generate a corrected clock by correcting a duty cycle of an input clock in response to the frequency region signal and in response to the duty cycle control signal; and a DLL (Delay Locked Loop) circuit configured to generate the DLL clock by controlling a phase of the corrected clock.

Abstract: A delay locked loop (DLL) apparatus includes a first delay unit converting a reference clock into a rising clock. A second delay unit converts the reference clock into a falling clock, and a replica delay unit replica-delays the rising clock. A first phase detector compares the phases of the reference clock and the delayed rising clock to output a first detection signal corresponding to the compared phases. A controller synchronizes the rising edge of the rising clock with the rising edge of the reference clock according to the first detection signal of the first phase detector. A second phase detector compares the phases of the synchronized rising clock and the synchronization clock to output a second detection signal corresponding to the compared phases. The DLL apparatus compensates for a skew between an external clock and data and between external and internal clocks by employing a single replica delay unit.

Abstract: A delay locked loop (DLL) circuit includes a duty cycle correcting unit configured to correct a duty cycle of a reference clock signal in response to a duty cycle correction signal and generate a correction clock signal. A feedback loop of the DLL circuit performs a delay lock operation on the correction clock signal and generates an output clock signal. A first duty cycle detecting unit detects a duty cycle of the correction clock signal and generates a first detection signal and a second duty cycle detecting unit detects a duty cycle of the output clock signal and generates a second detection signal. Finally, a duty cycle control unit generates the duty cycle correction signal in response to the first detection signal and the second detection signal to perform the duty cycle correction.

Abstract: A semiconductor integrated circuit includes an update control unit configured to generate an update control signal in response to a first command and a second command; and a DLL (Delay Locked Loop) circuit configured to generate an output clock by controlling a phase of an external clock in response to the update control signal.

Abstract: A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.

Abstract: A phase synchronization apparatus includes a bias control unit configured to sequentially delay an input clock signal to generate bias control signals having multiple bits, a bias generation unit configured to generate a pull-up bias voltage having a level that corresponds to logical values of the bias control signals, and to generate a pull-down bias voltage in response to a control signal; and a voltage controlled oscillator configured to include a plurality of delay cells respectively having a pull-up terminal and a pull-down terminal to generate an output clock signal in response to the control voltage, wherein the pull-up bias voltage is supplied to the pull-up terminals of the respective delay cells and the pull-down bias voltage is supplied to the pull-down terminals of the respective delay cells.

Abstract: A phase synchronization apparatus includes an oscillator gain setting member configured to discriminate a frequency by sequentially delaying input clock signal after dividing the input clock signal at a predetermined division ratio and to generate an oscillator gain setting signal by using discriminated frequency information, and a phase locked loop (PLL) circuit configured to oscillates output clock signal having a frequency corresponding to the oscillator gain setting signal in response to the input clock signal.

Abstract: A power control circuit includes a check unit that receives a reference clock and generates a check signal for cyclically activating a feedback loop of a DLL circuit, a phase detecting unit that detects a phase difference between the reference clock and a feedback clock, and generates a phase difference detection signal, and a signal combining unit that generates a power cutoff signal in response to a locking completion signal, the check signal, and the phase difference detection signal.

Abstract: A circuit configured to correct a duty cycle includes a clock dividing unit configured to delay an input clock signal by a specified delay amount and to generate a plurality of delayed clock signals, a clock selection unit configured to output any one among the plurality of delayed clock signals as a selected delayed clock signal in response to duty ratio information of the input clock signal, an edge control unit configured to generate a falling clock signal by controlling a falling edge of the selected delayed clock signal and to generate a rising clock signal by controlling a falling edge of the input clock signal based on information regarding a difference between lengths of a high duration and a low duration of the input clock signal, and a phase mixing unit for mixing phases of the falling clock signal and the rising clock signal and generating an output clock signal.

Abstract: A semiconductor memory apparatus includes a first delay locked loop configured to delay a system clock by a predetermined time to thereby generate a first delay locked clock synchronizing a data output timing with the system clock, a second delay locked loop configured to delay an inverse signal of the system clock by a predetermined time to thereby generate a second delay locked clock synchronizing the data output timing with the system clock, and a clock selection block configured to select one of the first and second delay locked clocks to thereby output as a reference clock for data output.

Abstract: A delay locked loop (DLL) circuit includes a clock signal dividing unit that can divide a reference clock signal by a predetermined division ratio and generate a division clock signal, a feedback loop that can perform a delay locked operation on the division clock signal and generate a delay clock signal, a half period delay unit that can delay the delay clock signal by a half period of the reference clock signal and generate a half period delay clock signal, and an operation unit that can combine the delay clock signal and the half period delay clock signal and generate an output clock signal.

Abstract: An apparatus for setting a test mode in a semiconductor integrated circuit includes a test mode control block that generates a coding control signal according to whether or not a control fuse is cut, and a test mode coding block that sets default values of a multi-bit test code in response to the coding control signal.

Abstract: A delay locked loop (DLL) circuit includes a first delay control unit configured to generate a first delay control signal in response to a first phase detection signal to control a delay amount of a first delay line and to output a first delay amount information signal, a second delay control unit configured to generate a second delay control signal in response to a second phase detection signal to control a delay amount of a second delay line and to output a second delay amount information signal, and to control the delay amount of the second delay line again in response to the first delay control signal and a half cycle information signal, a half cycle detecting unit configured to receive the first delay amount information signal and the second delay amount information signal to extract half cycle information of a reference clock signal, thereby generating the half cycle information signal, and a duty cycle correcting unit configured to combine an output clock signal from the first delay line and an output

Abstract: An apparatus for setting an operation mode in a DLL circuit generates a locking completion signal according to a level of a phase comparing signal obtained by comparing phases of a reference clock and a feedback clock. During three or more cycles of a pulse signal, it is determined whether a logic value of levels of the phase comparing signal is a specific combination, and the locking completion signal is selectively enabled.