Abstract: Isolated monoclonal antibodies are disclosed herein that specifically bind endoplasmin. In some embodiments these antibodies are fully human. Recombinant nucleic acids encoding these antibodies, expression vectors including these nucleic acids, and host cells transformed with these expression vectors are also disclosed herein. In several embodiments the disclosed antibodies are of use for detecting and/or treating tumors that express endoplasmin, such as melanoma, breast cancer, head and neck squamous cell carcinoma, renal cancer, lung cancer, glioma, bladder cancer, ovarian cancer or pancreatic cancer. In one example, the tumor is a melanoma.

Abstract: It is disclosed herein that condroitin sulfate proteoglycan 4 (CSPG4), also known as high molecular weight melanoma associated antigen, is overexpressed on basal breast carcinoma cells (BBC), specifically triple negative basal breast carcinoma cells (TNBC). Methods for detecting basal breast cancer in a subject are disclosed. Methods are also disclosed for inhibiting the growth of a basal breast cancer cell. These methods include contacting the basal breast cancer cell with an effective amount of an antibody that specifically binds CSPG4. Additional treatment methods, and the use of antibody panels, are also described herein.

Abstract: A complementary metal-oxide semiconductor (CMOS) structure includes a substrate and a P-type field effect transistor (FET) and an N-type FET disposed adjacent to one another on the substrate. Each FET includes a silicon-on-insulator (SOI) region, a gate electrode disposed on the SOI region, a source stressor, and a drain stressor disposed across from the source stressor relative to the gate electrode, wherein proximities of the source stressor and the drain stressor to a channel of a respective FET are substantially equal.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled with a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A portion of the upper pad layer is removed to define a line cavity. A fin-defining spacer comprising a material different from the material of the dielectric capacitor cap and the upper pad layer is formed around the line cavity by deposition of a conformal layer and an anisotropic etch. The upper pad layer is removed, and the fin-defining spacer is employed as an etch mask to form a semiconductor fin that laterally contacts the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: SOI structures with silicon layers less than 20 nm thick are used to form ETSOI semiconductor devices. ETSOI devices are manufactured using a thin tungsten backgate encapsulated by thin nitride layers to prevent metal oxidation, the tungsten backgate being characterized by its low resistivity. The structure includes at least one FET having a gate stack formed by a high-K metal gate and a tungsten region superimposed thereon, the footprint of the gate stack utilizing the thin SOI layer as a channel. The SOI structure thus formed controls the Vt variation from the thin SOI thickness and dopants therein. The ETSOI high-K metal backgate fully depleted device in conjunction with the thin BOX provides an excellent short channel control and lowers the drain induced bias and sub-threshold swings. The structure supports the evidence of the stability of the wafer having a tungsten film during thermal processing, during STI and contact formation.

Abstract: Combinations of agents that have a synergistic effect for the treatment of a tumor are disclosed herein. These combinations of agents can be used to treat tumors, wherein the cells of the cancer express a mutated BRAF. Methods are disclosed for treating a subject diagnosed with a tumor that expresses a mutated BRAF. The methods include administering to the subject (1) a therapeutically effective amount of an antibody or antigen binding fragment thereof that specifically binds high molecular weight melanoma associated antigen (HMW-MAA), also known as CSPG4; and (2) a therapeutically effective amount of a BRAF inhibitor. In some embodiments, the tumor is melanoma. In some embodiments the method includes selecting a subject with primary or secondary resistance to a BRAF inhibitor. In further embodiments, treating the tumor comprises decreasing the metastasis of the tumor. In additional embodiments, the BRAF inhibitor comprises PLX4032 or PLX4720.

Abstract: Disclosed herein are isolated human monoclonal antibodies, and functional fragments thereof, that specifically bind HMW-MAA. Nucleic acids encoding these antibodies, expression vectors including these nucleic acid molecules, and isolated host cells that express the nucleic acid molecules are also disclosed. The antibodies can be used to detect HMW-MAA in a sample. Methods of diagnosing cancer, or confirming a diagnosis of cancer, are disclosed herein that utilize these antibodies. Methods of treating a subject with cancer are also disclosed.

Abstract: Isolated monoclonal antibodies are disclosed herein that specifically bind endoplasmin. In some embodiments these antibodies are fully human. Recombinant nucleic acids encoding these antibodies, expression vectors including these nucleic acids, and host cells transformed with these expression vectors are also disclosed herein. In several embodiments the disclosed antibodies are of use for detecting and/or treating tumors that express endoplasmin, such as melanoma, breast cancer, head and neck squamous cell carcinoma, renal cancer, lung cancer, glioma, bladder cancer, ovarian cancer or pancreatic cancer. In one example, the tumor is a melanoma.

Abstract: It is disclosed herein that condroitin sulfate proteoglycan 4 (CSPG4), also known as high molecular weight melanoma associated antigen, is overexpressed on basal breast carcinoma cells (BBC), specifically triple negative basal breast carcinoma cells (TNBC). Methods for detecting basal breast cancer in a subject are disclosed. Methods are also disclosed for inhibiting the growth of a basal breast cancer cell. These methods include contacting the basal breast cancer cell with an effective amount of an antibody that specifically binds CSPG4. Additional treatment methods, and the use of antibody panels, are also described herein.

Abstract: Disclosed herein are isolated human monoclonal antibodies, and functional fragments thereof, that specifically bind HMW-MAA. Nucleic acids encoding these antibodies, expression vectors including these nucleic acid molecules, and isolated host cells that express the nucleic acid molecules are also disclosed. The antibodies can be used to detect HMW-MAA in a sample. Methods of diagnosing cancer, or confirming a diagnosis of cancer, are disclosed herein that utilize these antibodies. Methods of treating a subject with cancer are also disclosed.

Abstract: Silicon-on-insulator (SOI) structures with silicon layers less than 20 nm thick are used to form extremely thin silicon-on-insulator (ETSOI) semiconductor devices. ETSOI devices are manufactured using a thin tungsten backgate encapsulated by thin nitride layers to prevent metal oxidation, the tungsten backgate being characterized by its low resistivity. The structure further includes at least one FET having a gate stack formed by a high-K metal gate and a tungsten region superimposed thereon, the footprint of the gate stack utilizing the thin SOI layer as a channel. The SOI structure thus formed controls the Vt variation from the thin SOI thickness and dopants therein. The ETSOI high-K metal backgate fully depleted device in conjunction with the thin BOX provides an excellent short channel control and significantly lowers the drain induced bias and sub-threshold swings.

Abstract: A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.

Abstract: The present invention provides an access method and a system for a Machine-Type Communication (MTC) device, and an MTC device. The method comprises the steps of: an MTC device sending, when performing channel request, a channel request cause value and a random reference value to a Base Station Subsystem (BSS) (100), and the BSS sending the received channel request cause value and random reference value back to the MTC device when completing channel allocation (101). The present invention distinguishes the MTC services from other non-MTC services through the channel request cause value, that is, when the cause values are different, the collision will not occur even if the random reference values are the same, thus reducing the probability of the random reference value collision, implementing the effective management for access operations of large numbers of MTC devices, and avoiding the influence of random reference value collision on the normal implementation of original services.

Abstract: The present invention discloses a method for implementing a handover in a local switch, and the method includes: a core network transmitting indication information to a source base station subsystem during any terminal of communication parties which carries out a local switch is performing a base station subsystem handover, and the source base station subsystem determining whether to transmit user-plane speech data received from a media gateway to the terminal which has not performed the base station subsystem handover, or to transmit the user-plane speech data received from an internal link to the terminal which has not performed the base station subsystem handover, according to the indication information. The present invention also discloses a system for implementing a handover in a local switch as well as a base station subsystem.

Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

Abstract: A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region.

Abstract: The present invention provides a method for implementing a handover in a local switch, and the method comprises: when one party Mobile Station of a call implementing a local switch mode performs a Base Station Subsystem handover, the Base Station Subsystem handover transmits uplink speech data of the Mobile Station which does not need to perform the handover on a local switch link of the Base Station Subsystem and a link between the Base Station Subsystem and a Media Gateway simultaneously. A Base Station Subsystem implementing a handover in a local switch is also provided by the present invention. The present invention can efficiently avoid the speech loss of the Mobile Station performing the handover during the handover, and guarantees that the Mobile Station which needs to perform the handover can receive the speech data of the other party user no matter the Mobile Station is in the original BSS or the target BSS, thus maintaining the call between the two Mobile Stations efficiently.

Abstract: The present invention discloses an enhanced base station, which includes a Um interface functional module (1), a base station functional module (2), a controller functional module (3), and an A interface functional module (4), wherein the Um interface functional module (1), the base station functional module (2) and the A interface functional module (4) carry out the function of a BTS, and the controller functional module (3) and the A interface functional module (4) carry out the function of a BSC. The present invention also provides a method and a GSM system for realizing a flat mobile communication, wherein the enhanced base station carries out the functions of a BTS and a BSC in a conventional GSM system. Application of the present invention can decrease the number of devices for constituting the GSM system and the number of forwarding devices between a calling MS and a called MS, therefore reduce the time for service data transmission and improve the reliability of the transmission.