Abstract: A transmitter for a mobile device utilizes at least one mapper to improve power efficiency while still meeting out of band spurious emissions and waveform quality requirements. An encoder and modulator generates an encoded and modulated transmit signal from an input signal and a DAC then generates an analog representation of the encoded and modulated transmit signal. An amplifier stage coupled to the DAC amplifies the analog representation of the encoded and modulated transmit signal to generate a transmission signal. The transmitter further comprises an amplifier control block that generates an amplifier control signal to adjust at least one parameter of the amplifier stage. The amplifier control block includes at least one mapper to determine the amplifier control signal based on a peak to average power ratio and an average transmit power of the transmission signal. Environmental and operating conditions of the transmitter may be accounted for in the mappers.

Abstract: A strained silicon channel semiconductor structure comprises a substrate having an upper surface, a gate structure formed on the upper surface, at least one recess formed in the substrate at lateral sides of the gate structure, wherein the recess has at least one sidewall which has an upper sidewall and a lower sidewall concaved in the direction to the gate structure, and the included angle between the upper sidewall and horizontal plane ranges between 54.5°-90°, and an epitaxial layer filled into the two recesses.

Abstract: A mobile wireless communications device may include an antenna, a wireless radio frequency (RF) receiver, a wireless RF transmitter, and a duplexer connecting the wireless RF receiver and the wireless RF transmitter to the antenna. More particularly, the wireless RF receiver may include a low noise amplifier (LNA) connected to the duplexer and having first and second differential outputs, a first receive signal chain for wireless communications signals having a first signal type connected to the first differential output of the LNA, and a second receive signal chain for wireless communications signals having a second signal type different than the first signal type connected to the second differential output of the LNA.

Abstract: A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.

Abstract: The present invention discloses a system and method for nondestructively measuring the refractive index and the central thickness of a lens. The system comprises a radius measurement module arranged for measuring the curvature radius of the first surface of the lens; a focus measurement module arranged for measuring the best focus distance of the first surface of the lens; and a calculation module arranged for performing the first or the second calculation process according to the lensmaker's formula. Wherein, when the central thickness is given, the calculation module performs the first calculation process according to the curvature radius, the best focus distance and the central thickness to calculate the refractive index. On the contrary, when the refractive index is given, the calculation module performs the second calculation process according to the curvature radius, the best focus distance and the refractive index to calculate the central thickness.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: A semiconductor device includes: a substrate having a first region and a second region; a first gate structure disposed on the first region, wherein the first gate structure comprises a first high-k dielectric layer, a first work function metal layer, and a first metal layer disposed between the first high-k dielectric layer and the first work function metal layer; and a second gate structure disposed on the second region, wherein the second gate structure comprises a second high-k dielectric layer, a second work function metal layer, and a second metal layer disposed between the second high-k dielectric layer and the second work function metal layer, wherein the thickness of the second metal layer is lower than the thickness of the first metal layer.

Abstract: A power management system and method for a wireless communication device generates an average desired transmit power signal based on at least one of a received signal strength indicator signal and a power control instruction signal from a base station. A power supply level adjustment signal is generated based on the data parameters of an outgoing data stream and at least one environmental information signal. A combination of the power supply level adjustment signal and the average desired transmit power or a gain control signal and an altered version of the power supply level adjustment signal is used to generate a variable power supply signal that is provided to an output amplifier block for sufficiently generating outgoing wireless device radio signals while reducing power loss in the output amplifier block.

Abstract: Various embodiments described herein relate to a power management block and one or more amplification blocks used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier, both of which are included in a selected one of the amplification blocks. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values. Post power amplifier transmission power is detected for input into the one or more feedback loops executed in the power management block. A controller for the power amplifier is design to stabilize the system with respect to gain expansion in the power amplifier.

Abstract: A MOS transistor including a silicon substrate, a first gate structure and a second gate structure disposed on the silicon substrate is provided. The first gate structure and the second gate structure each includes a high-k dielectric layer disposed on the silicon substrate, a barrier layer disposed on the high-k dielectric layer, and a work function layer disposed on and contacted with the barrier layer. The MOS transistor further includes a dielectric material spacer. The dielectric material spacer is disposed on the barrier layer of each of the first gate structure and the second gate structure and surrounding the work function layer of each of the first gate structure and the second gate structure.

Abstract: Various embodiments described herein relate to a power management block and one or more amplification blocks used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier, both of which are included in a selected one of the amplification blocks. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values. Post power amplifier transmission power is detected for input into the one or more feedback loops executed in the power management block. A controller for the power amplifier is design to stabilize the system with respect to gain expansion in the power amplifier.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: A peak to average power ratio signal is generated from a first mapping function that selects the peak to average power ratio signal that corresponds to the data rate or data format of the signal to be transmitted. The selected peak to average power ratio signal is summed with a desired average transmit power signal. The resulting summation signal is input to a second effectively continuously valued mapping function comprising a table that has a plurality of power amplifier control signal values each with a corresponding peak transmit power. Each peak transmit power signal value results in a power amplifier control signal value that achieves the best possible transmitter power efficiency while still meeting out of band spurious emissions and waveform quality requirements. The summation signal value maps to one of the power amplifier control signal value that is then used to adjust a parameter such as bias of the power amplifier.

Abstract: The present invention discloses a system and method for nondestructively measuring the refractive index and the central thickness of a lens. The system comprises a radius measurement module arranged for measuring the curvature radius of the first surface of the lens; a focus measurement module arranged for measuring the best focus distance of the first surface of the lens; and a calculation module arranged for performing the first or the second calculation process according to the lensmaker's formula. Wherein, when the central thickness is given, the calculation module performs the first calculation process according to the curvature radius, the best focus distance and the central thickness to calculate the refractive index. On the contrary, when the refractive index is given, the calculation module performs the second calculation process according to the curvature radius, the best focus distance and the refractive index to calculate the central thickness.

Abstract: A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor.

Abstract: A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an included angle.

Abstract: A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.

Abstract: A transmitter for a mobile device utilizes at least one mapper to improve power efficiency while still meeting out of band spurious emissions and waveform quality requirements. An encoder and modulator generates an encoded and modulated transmit signal from an input signal and a DAC then generates an analog representation of the encoded and modulated transmit signal. An amplifier stage coupled to the DAC amplifies the analog representation of the encoded and modulated transmit signal to generate a transmission signal. The transmitter further comprises an amplifier control block that generates an amplifier control signal to adjust at least one parameter of the amplifier stage. The amplifier control block includes at least one mapper to determine the amplifier control signal based on a peak to average power ratio and an average transmit power of the transmission signal. Environmental and operating conditions of the transmitter may be accounted for in the mappers.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a recess and a stress-providing structure. A channel structure is formed in the substrate. The recess is formed in the substrate and arranged beside the channel structure. The recess has a round inner surface. The stress-providing structure is formed within the recess. Corresponding to the profile of the round inner surface of the recess, the stress-providing structure has a round outer surface.

Abstract: A strained silicon channel semiconductor structure comprises a substrate having an upper surface, a gate structure formed on the upper surface, at least one recess formed in the substrate at lateral sides of the gate structure, wherein the recess has at least one sidewall which has an upper sidewall and a lower sidewall concaved in the direction to the gate structure, and the included angle between the upper sidewall and horizontal plane ranges between 54.5°-90°, and an epitaxial layer filled into the two recesses.