Abstract: The invention relates to a method, a non-transitory computer-readable storage medium, and an apparatus for executing an embedded multi-media card (eMMC) command. The method is performed by a processing unit of a flash controller to include: receiving an eMMC command from a host side; and performing a first function associated with a host performance acceleration (HPA) mode according to content of reserved bits of the eMMC command. The HPA mode allows the host side to allocate space in a system memory as an HPA buffer. The HPA buffer stores logical-block-address to physical-block-address (L2P) mapping entries obtained from the flash controller, and each L2P mapping entry stores information indicating which physical address that user data of a corresponding logical address is physically stored in a flash device, thereby enabling the host side to issue an HPA read command carrying the physical address to the flash controller.

Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A demand forecasting method and a demand forecasting apparatus are provided. A preliminary prediction amount corresponding to a part number is obtained based on historical demand data. A demand probability of the part number is calculated based on the preliminary prediction amount. A prediction demand amount corresponding to the part number is obtained based on the historical demand data, the preliminary prediction amount and the demand probability.

Abstract: A control system and a control method of fuel cell stacks are provided. The control system includes a set of fuel cell stacks, a secondary battery, a monitoring device, and a control device. Each fuel cell stack has a power output that can be independently started up or shut down. The secondary battery is connected to power output terminals of the fuel cell stacks via a power transmission path. The monitoring device is configured to monitor an electrical parameter of the power transmission path. The control device receives an electrical parameter signal from the monitoring device, and outputs a control signal to shut down or start up the power output of at least one of the fuel cell stacks if the electrical parameter's value is higher than a predetermined upper limit or lower than a predetermined lower limit.

Abstract: Provided herein is a method for improving growth, stress tolerance and productivity of a plant. Also provided herein is a method for increasing seed quality of a plant. Specifically, the disclosure provides a method for improving growth, stress tolerance and productivity of a plant, comprising: providing a transgenic plant, which includes a reduced expression on an MYBS2 gene as relative to its wild-type counterpart; and a method for increasing seed quality of a plant, comprising: providing a seed from a transgenic plant, which overexpresses a full-length MYBS2 gene or a mutant MYBS2 gene as relative to its wild-type counterpart.

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

Abstract: The invention relates to methods, and an apparatus for data reads in a host performance acceleration (HPA) mode. One method is performed by a host side to include: issuing a switch command to a flash controller to request the flash controller to activate an HPA function, and an acquisition function for a logical-block-address to physical-block-address (L2P) mapping table; issuing a write_multiple_block command to the flash controller to transfer a data block to a flash controller, where the data block includes a region number and a sub-region number; issuing a read_multiple_block command to the flash controller to obtain a plurality of L2P mapping entries corresponding to the region number and the sub-region number from the flash controller. The host side and the flash controller communicate with each other in an embedded multi-media card (eMMC) protocol.

Abstract: The invention relates to methods, and an apparatus for data reads in a host performance acceleration (HPA) mode. One method is performed by a host side to include: searching an HPA buffer in a system memory for a logical-block-address to physical-block-address (L2P) mapping entry corresponding to a logical block address (LBA); issuing a switch command to a flash controller to request the flash controller to activate an HPA function, and does not activate an acquisition function for an L2P mapping table, where the host side and the flash controller communicate with each other in an embedded multi-media card (eMMC) protocol; issuing a write_multiple_block command to the flash controller to transfer a first data block to the flash controller, which includes the first L2P mapping entry; and issuing a read_multiple_block command to obtain data corresponding to the first L2P mapping entry from the flash controller.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.

Abstract: The invention relates to a method, a non-transitory computer-readable storage medium, and an apparatus for executing an embedded multi-media card (eMMC) command. The method is performed by a processing unit of a flash controller to include: receiving an eMMC command from a host side; and performing a first function associated with a host performance acceleration (HPA) mode according to content of reserved bits of the eMMC command. The HPA mode allows the host side to allocate space in a system memory as an HPA buffer. The HPA buffer stores logical-block-address to physical-block-address (L2P) mapping entries obtained from the flash controller, and each L2P mapping entry stores information indicating which physical address that user data of a corresponding logical address is physically stored in a flash device, thereby enabling the host side to issue an HPA read command carrying the physical address to the flash controller.

Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A method for performing memory access management with aid of machine learning in a memory device, the associated memory device and the controller thereof, and the associated electronic device are provided. The method may include: in the memory device, during a training phase, performing machine learning according to a predetermined database regarding threshold voltage distribution, to generate at least one threshold voltage identification model, wherein the at least one threshold voltage identification model is utilized for determining bit information read from a memory cell of the NV memory; and in the memory device, during an identification phase, obtaining representative information of one or more reference voltages when reading the NV memory, for performing machine identification according to the at least one threshold voltage identification model to generate read data, wherein the read data includes the bit information.

Abstract: The invention relates to methods, and an apparatus for data reads in a host performance acceleration (HPA) mode. One method is performed in a host side to include: obtaining a value of an extended device-specific data (Ext_CSD) register in a flash controller from the flash controller, where the host side and the flash controller communicate with each other in an embedded multi-media card (eMMC) protocol; and allocating space in a system memory as an HPA buffer, and storing a plurality of first logical-block-address to physical-block-address (L2P) mapping entries obtained from the flash controller when the value of the Ext_CSD register comprises information indicating that an HPA function is supported, where each L2P mapping entry stores information indicating which physical address that user data of a corresponding logical address is physically stored in a flash device.

Abstract: An MRAM structure includes a dielectric layer. A contact hole is disposed in the dielectric layer. A contact plug fills in the contact hole and protrudes out of the dielectric layer. The contact plug includes a lower portion and an upper portion. The lower portion fills in the contact hole. The upper portion is outside of the contact hole. The upper portion has a top side and a bottom side greater than the top side. The top side and the bottom side are parallel. The bottom side is closer to the contact hole than the top side. An MRAM is disposed on the contact hole and contacts the contact plug.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: The power supply device is configured on an aircraft and includes a secondary battery, a transformer, a fuel cell and a bypass switch. The transformer is electrically connected between the secondary battery and the aircraft. The fuel cell is suitable for providing a first output current to the aircraft. The bypass switch is connected in parallel with the transformer. The transformer has a first output voltage set value. When a first output terminal voltage of the fuel cell is lower than the first output voltage set value and the bypass switch is in a non-conducting state, a second output current of the secondary battery is provided to the aircraft via the transformer. When the first output terminal voltage is lower than the first output voltage set value and the bypass switch is in a conducting state, the second output current is provided to the aircraft via the bypass switch.