Patents by Inventor Yi Chu

Yi Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8143112
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: March 27, 2012
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Patent number: 8124454
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: February 28, 2012
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Trung Tri Doan, Chuong Anh Tran, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Publication number: 20110316039
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
    Type: Application
    Filed: June 15, 2011
    Publication date: December 29, 2011
    Inventors: WEN-HUANG LIU, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Publication number: 20110308961
    Abstract: A pattern processing method of a workpiece surface includes at least the following steps. A first anodized process is performed to a workpiece, wherein a surface of the workpiece includes at least one flat portion and at least one curved portion. A patterned film including a releasable substrate and an acid-base resistant ink layer disposed thereon is provided, wherein a surface of the releasable substrate on which the acid-base resistant ink layer is disposed faces the workpiece. A force is applied to an edge of the patterned film to adhere the patterned film the workpiece smoothly, so as to transfer a pattern of the acid-base resistant ink layer to the workpiece. The releasable substrate is removed. The workpiece is etched and the acid-base resistant ink layer is removed; and a second anodized process is performed to form a dichromatic anode three-dimensional texture.
    Type: Application
    Filed: September 20, 2010
    Publication date: December 22, 2011
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Pei-Yi Chu, Chang-Kai Liu, Chun-Huang Yu
  • Publication number: 20110302429
    Abstract: A rack system for a server includes a number of server units, which includes first to the third sets of server units, voltage converter, first to third power supply circuits. The voltage converter receives and converters a three-phase alternating current (AC) power signal to provide first to third single-phase power signals. The first to the third sets of power supply circuits respectively provides first to third direct current (DC) power signals according to the first to the third single-phase power signals. The first set to the third set of server units is respectively powered by first to the third DC power signals or respectively powered by first part, second part, and third part of the first to the third DC power signals.
    Type: Application
    Filed: December 17, 2010
    Publication date: December 8, 2011
    Applicant: Quanta Computer Inc.
    Inventors: Tzu-Hung Wang, Chao-Jung Chen, Chih-Ming Chen, Wei-Yi Chu
  • Patent number: 8056381
    Abstract: A device for producing a pattern onto a work piece includes a die, an electromagnetic actuator and a base. The die includes a patterned surface, and the patterned surface includes a pattern. The electromagnetic actuator includes an plate body, a convex part and a strip unit connected to the plate body. The electromagnetic actuator is disposed in the base. When the electromagnetic actuator is activated while a work piece is being positioned between the patterned surface and the electromagnetic actuator, an inductive current is generated on the work piece by the electromagnetic actuator, and then a repulsive force is generated between the electromagnetic actuator and the work piece. The repulsive force causes the work piece to adhere to the patterned surface, forcing the work piece to deform against the patterned surface and to take on the shape of the pattern.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: November 15, 2011
    Assignee: Metal Industries Research & Development Centre
    Inventors: Tung-Chen Cheng, Yu-Yi Chu, Rong-Shean Lee, Tzyy-Ker Sue, Chun-Chieh Wang
  • Patent number: 8035564
    Abstract: A surface mounted planner antenna apparatus includes an antenna and a circuit board. The antenna includes a base, a radiation metal plate arranged on a top face of the base, and a ground metal plate arranged on a bottom face of the base. A through hole is defined from the radiation metal plate and passed through the base to the ground metal plate. A signal feeder is arranged in the through hole and electrically connected to the radiation metal plate but electrically insulated with the ground metal plate. The circuit board is attached on the bottom face of the base and includes an upper face and a lower face, the upper face includes an area for binding with the ground metal plate on the bottom face of the base, and the lower face includes a first pad and a signal feeding trace electrically connected with the signal feeder.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: October 11, 2011
    Assignee: Cirocomm Technology Corp.
    Inventors: Tsai-Yi Yang, Ching-wen Wu, Wei-Hung Hsu, Te-Yi Chu
  • Patent number: 8003994
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: August 23, 2011
    Assignee: SemiLEDs Optoelectronics Co., Ltd
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 7902562
    Abstract: A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.
    Type: Grant
    Filed: August 18, 2008
    Date of Patent: March 8, 2011
    Assignee: Epistar Corporation
    Inventors: Cheng-Ta Kuo, Yu-Pin Hsu, Chun-Kai Wang, Jui-Yi Chu, Tsung-Kuang Chen
  • Patent number: 7892891
    Abstract: Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: February 22, 2011
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Trung Tri Doan, Chuong Anh Tran, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Patent number: 7829440
    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.
    Type: Grant
    Filed: August 7, 2007
    Date of Patent: November 9, 2010
    Assignee: SemiLEDS Optoelectronics Co. Ltd.
    Inventors: Jiunn-Yi Chu, Chao-Chen Cheng, Chen-Fu Chu, Trung Tri Doan
  • Publication number: 20100258834
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
    Type: Application
    Filed: June 25, 2010
    Publication date: October 14, 2010
    Inventors: WEN-HUANG LIU, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 7759670
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: July 20, 2010
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Publication number: 20100147043
    Abstract: A device for producing a pattern onto a work piece is disclosed. The device comprises a die, an electromagnetic actuator and a base; wherein the die comprises a patterned surface and the patterned surface comprises a pattern. The electromagnetic actuator comprises an plate body, a convex part and a strip unit connected to the plate body; the electromagnetic actuator is disposed in the base. When the electromagnetic actuator is activated while a work piece is being positioned between the patterned surface and the electromagnetic actuator, an inductive current is generated on the work piece by the electromagnetic actuator, and then a repulsive force is generated between the electromagnetic actuator and the work piece. The repulsive force then causes the work piece to adhere to the patterned surface, forcing the work piece to deform against the patterned surface and to take on the shape of the pattern.
    Type: Application
    Filed: December 30, 2008
    Publication date: June 17, 2010
    Inventors: Tung-Chen Cheng, Yu-Yi Chu, Rong-Shean Lee, Tzyy-Ker Sue, Chun-Chieh Wang
  • Publication number: 20100139070
    Abstract: A device for producing a patterned plate from a tubular work piece is disclosed wherein walls of the tubular work piece comprise at least one forming surface. The device comprises a die and an electromagnetic actuator, wherein the die comprises a patterned surface with a pattern formed thereon and a fracturing part. The tubular work piece is disposed between the die and the electromagnetic actuator such that the walls of the tubular work piece correspond to walls of the die, and the forming surface corresponds to the patterned surface. When the electromagnetic actuator is supplied with a current pulse, an eddy current is induced in the tubular work piece, generating a repulsive force between the electromagnetic actuator and the tubular work piece. Therefore, the tubular work piece impacts the die, and the forming surface is deformed against the patterned surface and the fracturing part, thus replicating the pattern of the patterned surface onto the forming surface.
    Type: Application
    Filed: December 30, 2008
    Publication date: June 10, 2010
    Inventors: Tung-Chen Cheng, Yu-Yi Chu
  • Publication number: 20100134357
    Abstract: A surface mounted planner antenna apparatus includes an antenna and a circuit board. The antenna includes a base, a radiation metal plate arranged on a top face of the base, and a ground metal plate arranged on a bottom face of the base. A through hole is defined from the radiation metal plate and passed through the base to the ground metal plate. A signal feeder is arranged in the through hole and electrically connected to the radiation metal plate but electrically insulated with the ground metal plate. The circuit board is attached on the bottom face of the base and includes an upper face and a lower face, the upper face includes an area for binding with the ground metal plate on the bottom face of the base, and the lower face includes a first pad and a signal feeding trace electrically connected with the signal feeder.
    Type: Application
    Filed: December 1, 2008
    Publication date: June 3, 2010
    Inventors: Tsai-Yi YANG, Ching-Wen Wu, Wei- Hung Hsu, Te-Yi CHU
  • Patent number: 7723718
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: May 25, 2010
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Publication number: 20100102295
    Abstract: This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
    Type: Application
    Filed: October 22, 2009
    Publication date: April 29, 2010
    Inventors: Chun-Kai WANG, Schang-Jing Hon, Yu-Pin Hsu, Jui-Yi Chu, Hsin-Hsien Wu, Wei-Yu Yen
  • Patent number: 7687322
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: March 30, 2010
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Publication number: 20100046205
    Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.
    Type: Application
    Filed: August 25, 2009
    Publication date: February 25, 2010
    Inventors: Jui-Yi CHU, Cheng-Ta Kuo, Yu-Pin Hsu, Chun-Kai Wang, Hsin-Hsien Wu, Yi-Chieh Lin