Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A local node for updating detection models while maintaining data privacy has a sharing module configured to receive instructions for calculating at least one general feature from data stored at the first local node, a retraining module configured to retrain the detection model to include a detection component that uses the instructions, a data collection module configured to collect data comprising customer data and transaction data stored at the first local node, and a performance module. The performance module is configured to determine a value for the at least one general feature from the collected data using the instructions, and trigger a suspicious activity alert based on the determined value and the instructions.

Abstract: A local node for updating detection models while maintaining data privacy has an aggregation module, a retraining module, an instructions module, and a sharing module. The aggregation module aggregates the data into features that describe the contents of the data. The retraining module retrains the detection model using the features by implementing an algorithm that includes at least one selected feature and a threshold for triggering an activity alert. The instructions module determines instructions for calculating the at least one selected feature from a different collection of data. The sharing module generates a package having the instructions for calculating the at least one selected feature from the different collection of data and the threshold, and transmits the package to a local node for implementation of the retrained detection model with data stored at the local node.

Abstract: The present application relates to systems for updating detection models and methods for using the same. The systems and methods generally comprise at least one local node comprising a monitoring module, a diagnosis module, and an evaluation module The system receives at least one model update, and analyzes the model update and current models and data present in the local node, and determines if the update should be applied. In some embodiments, a local node can generate a model update for use in other local nodes, while not sharing private data present in the local node.

Abstract: The present application relates to systems for updating detection models and methods for using the same. The systems and methods generally comprise at least one local node comprising a monitoring module, a diagnosis module, and an evaluation module The system receives at least one model update, and analyzes the model update and current models and data present in the local node, and determines if the update should be applied. In some embodiments, a local node can generate a model update for use in other local nodes, while not sharing private data present in the local node.

Abstract: A cylindrical filter device of the present invention includes a wavy filter screen, a sealing device, and a connecting device. The wavy filter screen includes a first flexible side, a second flexible side opposite to the first flexible side, and a plurality of wavy structures disposed between the first flexible side and the second flexible side. The wavy filter screen wraps to form a cylindrical structure with respect to an axis. The opposite ends of the cylindrical structure are respectively wrapped to form a first opening and a second opening by the first flexible side and the second flexible side. The sealing device is disposed at the first opening and has a first groove. The first flexible side is able to engage with the first groove with its elasticity and makes the first opening be sealed by the sealing device. The connecting device is disposed at the second opening. The connecting device has a second groove and a port.

Abstract: An entity resolution system performs a method of resolving one or more candidate entities based on a data set. The entity resolution system has a rules-based module, a machine learning module, a narrative module, and an evaluation module. The rules-based module compares the first entity features to the second entity features and determines whether a rule identifies a relationship between the first entity and the second entity. The machine learning module rates a similarity of the first entity features and the second entity features. The narrative module generates a narrative output based on one or more of the rules-based module and the machine learning module, the narrative output stating an identified relationship between the first entity and the second entity. The evaluation module determines one or more metrics to apply feedback to the system.

Abstract: An entity resolution system performs a method of resolving one or more candidate entities based on a data set. The entity resolution system has a machine learning module and a narrative module. The machine learning module generates a synthesized data set, the synthesized data set comprising similarity ratings for each entity feature. The narrative module applies a clustering analysis to determine one or more distances between the group of similarity ratings for each entity feature and one or more clusters associated with known relationships between entities, generates a narrative output based on one or more distances. The narrative output states at least one identified relationship between at least two entities of the plurality of candidate entities and a confidence score. The narrative engine also provides the narrative output to a user interface.

Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A magnetoresistive random access memory (MRAM), including multiple cell array regions, multiple MRAM cells disposed in the cell array region, a silicon nitride liner conformally covering on the MRAM cells, an atomic layer deposition dielectric layer covering on the silicon nitride liner in the cell array region, wherein the surface of atomic layer deposition dielectric layer is a curved surface concave downward to the silicon nitride liner at the boundary of MRAM cells, and an ultra low-k dielectric layer covering on the atomic layer deposition dielectric layer.

Abstract: The present invention relates to a method of manufacturing a power device and a structure of the power device, which is used to solve the problem that conventional power device needs to be independently packaged and requires a welding process. The method includes: forming a plurality of semiconductor device layers spaced in intervals on a front of a silicon wafer; excavating a plurality of grooves on the front of the silicon wafer to separate the plurality of semiconductor device layers; filling each of the plurality of grooves with each of a plurality of first spacer materials; grinding a back of the silicon wafer until the first spacer materials being exposed; attaching a plurality of metal layers to a region of the back of the silicon wafer opposite to the plurality of semiconductor device layers; and electrically connecting each of independent plurality of lead frames to the plurality of metal layers respectively. The present invention further includes the structure of the power device.

Abstract: An organic light emitting diode (OLED) display panel includes a substrate, a reflective electrode disposed on the substrate, and a pixel define layer (PDL) formed on the substrate and the reflective electrode layer. The reflective electrode layer has multiple reflective structures, and each reflective structure has a first region and a second region. The PDL is provided with multiple openings corresponding to the reflective structures, such that the first region and the second region of each of the reflective structures are exposed in a corresponding one of the openings. Multiple organic emissive structures are correspondingly formed in the openings and covering the reflective structures, forming a plurality of pixels. For each respective pixel of the pixels, a first reflective ratio of the respective pixel corresponding to the first region is greater than a second reflective ratio of the respective pixel corresponding to the second region.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.

Abstract: Provided are a light guiding element (100), a light guiding device (500), and a lighting module (800). The light guiding element (100) includes a light incident portion (1) and a light exit portion (2), where the light incident portion (1) includes a plurality of light guiding columns (11), each of which includes a first end surface (A) connected to the light exit portion (2), a second end surface (B) facing away from the light exit portion, and a side surface formed between the first end surface (A) and the second end surface (B), where the first end surface (A) has an area larger than that of the second end surface (B). Also provided are a light guiding device (500) including the light guiding element (100), and a lighting module (800) including the light guiding device (500). The light guiding element (100) enables, for a generated light type pattern, the shape to be complete, the color to be even, and the phenomena of vignette effect and dark lines to be reduced.

Abstract: A method is provided for fabricating a diol containing a bis-cycloaliphate. The diol is hydrogenated with hydrogen and a catalyst. Therein, the diol has a bis-aromatic. The catalyst comprises an active metal and a catalyst carrier. The active metal is a VIII-B-group transition element. The catalyst carrier is an oxide of IV-B-group element. Thus, the diol containing the bis-cycloaliphate is generated.

Abstract: The present invention discloses a process for making alicyclic polycarboxylic acids or their derivatives, referring to a process for hydrogenating aromatic polycarboxylic acids or their derivatives in the presence of hydrogen and a catalyst to form alicyclic polycarboxylic acids or their derivatives, and the catalyst comprises at least one active metal of group VIIIB transition elements of the periodic table of elements, and a catalyst support comprising group IIA and group IIIA elements in a specific weight ratio.

Abstract: A semiconductor device preferably includes a metal-oxide semiconductor (MOS) transistor disposed on a substrate, an interlayer dielectric (ILD) layer disposed on the MOS transistor, and a magnetic tunneling junction (MTJ) disposed on the ILD layer. Preferably, a top surface of the MTJ includes a reverse V-shape while the top surface of the MTJ is also electrically connected to a source/drain region of the MOS transistor.

Abstract: A display device includes a first substrate, a first active element layer, first to third light-emitting elements, a first pixel defining layer, and fourth to sixth light-emitting elements. The first active element layer is disposed on the first substrate. The first, second and third light-emitting elements are electrically connected with the first active element layer. The first, second and third light-emitting elements have first, second and third light-emitting layers respectively. The first pixel defining layer is disposed on the first active element layer and has first, second and third openings. The first, second and third light-emitting layers are disposed in the first, second and third openings respectively. The fourth, fifth and sixth light-emitting elements are disposed on the first pixel defining layer. A vertical distance between the first light-emitting element and the fourth light-emitting element is greater than 0 micrometers and less than or equal to 5 micrometers.