Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: Updating a user social network profile of a user based on relevant activities posted by other users in a same social network.

Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Abstract: A flash analog to digital converter includes double differential comparator circuits and a calibration circuit. Each double differential comparator circuit compares a first input signal with a corresponding voltage in a first set of reference voltages, and compares a second input signal with a corresponding voltage in a second set of reference voltages, in order to generate a corresponding signal in first signals. The calibration circuit outputs a first test signal to be the first input signal and outputs a second test signal to be the second input signal in a test mode, and calibrates a common mode level of each of the first input signal and the second input signal, or calibrates at least one first reference voltage in the first set of reference voltages and at least one second reference voltage in the second set of reference voltages according to a distribution of the first signals.

Abstract: A method of screening weak bits in a memory array includes dividing the memory array into a first and a second memory array, storing a first set of data in the first memory array, performing a first baking process on the first memory array or applying a first magnetic field to the first memory array, determining that a first portion of the first set of data stored in the first memory array is altered by the first baking process or the first magnetic field, and at least one of replacing memory cells of a first set of memory cells that are storing the first portion of the first set of data with corresponding memory cells in the second memory array of the memory array, or not using the memory cells of the first set of memory cells storing the first portion of the first set of data.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Abstract: Base stations and methods for wireless communication networks, the base station having: a baseband processing unit; a first radio module including a digital signal processing block connected to the baseband processing unit, wherein the digital signal processing block is further connected to a first antenna; a second radio module connected to the baseband processing unit and having a second antenna; wherein the base station is configured to activate and deactivate the first radio module and second radio module based on the data capacity requirements of the wireless communication network.

Abstract: A control circuit of a pipeline analog-to-digital converter (ADC) is provided. The pipeline ADC includes a multiplying digital-to-analog converter (MDAC) which includes a capacitor. The control circuit includes six switches and two buffer circuits. The first and second switches are respectively coupled between one end of the capacitor and the first and second reference voltages. The output terminals of the first and second buffer circuits are respectively coupled to the first and second switches. The input terminal of the first buffer circuit is coupled to the third reference voltage through the third switch, or receives a control signal through the fifth switch. The input terminal of the second buffer circuit is coupled to the fourth reference voltage through the fourth switch, or receives the control signal through the sixth switch. The first and second reference voltages are different, and the first and second switches are not turned on simultaneously.

Abstract: In an embodiment, the present disclosure relates to a targeting platform that includes a targeted delivery system including an agent. In some embodiments, the targeted delivery system is modified by fluorination. In some embodiments, the targeted delivery system is electrically charge neutral. In a further embodiment, the present disclosure relates to a method that includes fluorinating a targeting compound with a fluorinating reagent and loading an agent with the fluorinated targeting compound to thereby form a micelle. In an additional embodiment, the present disclosure relates to a targeting platform that includes a fluorinated polymeric system including an agent. In another embodiment, the present disclosure relates to a method that includes fluorinating a targeting compound with a fluorinating reagent and loading an agent with the fluorinated targeting compound to thereby form a micelle. Additionally, the method can include administering the fluorinated targeting compound to a subject.

Abstract: A biofuel cell includes a cathode, an anode, and a microbial community. At least one of the anode and the cathode contains a biochar prepared from a Trapa natans husk as an electrode material, and the anode is located in the microbial community. By using the biochar prepared from the Trapa natans husk as the electrode material, not only can the power density of the biofuel cell be increased, but the economic benefits of waste recycling can also be achieved.

Abstract: A pipeline analog to digital converter (ADC) includes converter circuitries, a detector circuitry, and a clock generator circuit. The converter circuitries sequentially convert an input signal to be digital codes. One of the converter circuitries includes a sub-ADC circuit and a multiplying digital to analog converter (MDAC) circuit. The sub-ADC circuit performs a quantization according to a first signal to generate a corresponding one of the digital codes, in which the first signal is the input signal or a previous stage residue signal. The MDAC circuit processes the corresponding one of the digital codes in response to a first clock signal, in order to generate a current stage residue signal. The detector circuitry detects whether the quantization is complete, in order to generate a control signal. The clock generator circuit adjusts a timing of the first clock signal according to the control signal.

Abstract: Systems, devices, methods and other techniques for assessing data leakage risks in a computing environment. A computing system receives interaction data and query data for a party. The system determines dimension combinations represented in the interaction data and identifies, for each query described in the query data, each dimension combination that appears in a result to the query. The system generates, for each dimension combination, a query membership tag that identifies each query for which the dimension combination appears in a result to the query. The system determines, for each unique query membership tag, a count of a number of entities that are associated in the interaction data with any interaction having a dimension combination that corresponds to the query membership tag. The system assesses a data leakage risk for the party based on the counts for one or more unique query membership tags.

Abstract: A balance for air resistance testing is provided. The air resistance testing comprises 2N dual-hole beam sensors and an upper plate; wherein, the 2N dual-hole beam sensors are arranged beneath the upper plate and fixed to the upper plate; each dual-hole beam sensor comprises a beam, an upper hole and a lower hole, the upper hole and the lower hole are arranged along the longitudinal direction of the beam, the upper hole is arranged at the upper part of the beam, and the lower hole is arranged at the lower part of the beam.

Abstract: A method of screening weak bits in a memory array. The method includes storing a first set of data in a first memory array of the memory array, performing a first baking process on at least the first memory array or applying a first magnetic field to at least the first memory array, tracking an address of at least a first memory cell of a first set of memory cells of the first memory array, if the first memory cell of the first set of memory cells stores altered data, and at least one of replacing the first memory cell of the first set of memory cells storing the altered data with a corresponding memory cell in a second memory array of the memory array, or discarding the first memory cell of the first set of memory cells storing the altered data.

Abstract: A method and apparatus for performing album management regarding an external storage device for a user are provided. The external storage device is positioned outside of an electronic device and is coupled to the electronic device to be an accessory of the electronic device. The method may include: utilizing a processing circuit of the electronic device to scan all pictures of multiple pictures in at least one internal storage device within the electronic device and analyze respective picture contents of the multiple pictures to perform classification, and establish an index database of each picture of the multiple pictures according to multiple classification tags respectively corresponding to multiple types of classification; and utilizing the processing circuit to control at least two stages of backup, to generate multiple classified albums respectively corresponding to the multiple types of classification within the external storage device.

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.