Patents by Inventor Yin Liu

Yin Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210224154
    Abstract: A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N?1 groups and the plurality of parity bits form a first group different from the N?1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N?1 groups; and providing a second word comprising updated data bits that form a second one of the N?1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N?1 groups.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Inventors: Chien-Yin LIU, Yu-Der CHIH, Hsueh-Chih YANG, Jonathan Tehan CHEN, Kuan-Chun CHEN
  • Patent number: 11043249
    Abstract: A memory device for memory cell programming and erasing with refreshing operation is disclosed. The memory device includes a location-related memory cell and a refresh module. The location-related memory cell is coupled to a bit line. The refresh module is configured to refresh the location-related memory cell by reading data stored in the location-related memory cell and then writing the data back to the location-related memory cell in a condition that a target memory cell that is coupled to the bit line is programmed or erased. A method for memory cell programming and erasing with refreshing operation is also disclosed herein.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: June 22, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yue-Der Chih, Cheng-Hsiung Kuo, Gu-Huan Li, Chien-Yin Liu
  • Patent number: 11037978
    Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: June 15, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ping-Yin Liu, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen, Pin-Nan Tseng
  • Patent number: 11031369
    Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Xin-Hua Huang, Kuan-Liang Liu, Kuo Liang Lu, Ping-Yin Liu
  • Patent number: 11014805
    Abstract: A method of making a semiconductor package includes bonding a carrier to a surface of the substrate, wherein the carrier is free of active devices, wherein the carrier includes a carrier bond pad on a surface of the carrier. The method further includes bonding a wafer bond pad of an active circuit wafer to the carrier bond pad, wherein the bonding of the wafer bond pad to the carrier bond pad comprises re-graining the wafer bond pad to form at least one grain boundary extending from the wafer bond pad to the carrier bond pad.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-wen Cheng, Hung-Chia Tsai, Lan-Lin Chao, Yuan-Chih Hsieh, Ping-Yin Liu
  • Publication number: 20210151353
    Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.
    Type: Application
    Filed: January 4, 2021
    Publication date: May 20, 2021
    Inventors: Hsun-Chung Kuang, Yen-Chang Chu, Cheng-Tai Hsiao, Ping-Yin Liu, Lan-Lin Chao, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen
  • Publication number: 20210126626
    Abstract: A filter includes a switching circuit, a first filter circuit, and a second filter circuit. The first filter circuit is coupled to the switching circuit. The second filter circuit is coupled to the switching circuit. The switching circuit is controlled to control the first filter circuit to perform a first filtering process on an input signal or control the first filter circuit to work in coordination with the second filter circuit to perform a second filtering process on the input signal.
    Type: Application
    Filed: April 14, 2020
    Publication date: April 29, 2021
    Inventors: Yun-Tse CHEN, Kai-Yin LIU
  • Publication number: 20210117564
    Abstract: Systems, devices, methods and other techniques for assessing data leakage risks in a computing environment. A computing system receives interaction data and query data for a party. The system determines dimension combinations represented in the interaction data and identifies, for each query described in the query data, each dimension combination that appears in a result to the query. The system generates, for each dimension combination, a query membership tag that identifies each query for which the dimension combination appears in a result to the query. The system determines, for each unique query membership tag, a count of a number of entities that are associated in the interaction data with any interaction having a dimension combination that corresponds to the query membership tag. The system assesses a data leakage risk for the party based on the counts for one or more unique query membership tags.
    Type: Application
    Filed: June 5, 2018
    Publication date: April 22, 2021
    Inventor: Yin Liu
  • Patent number: 10970167
    Abstract: A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N?1 groups and the plurality of parity bits form a first group different from the N?1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N?1 groups; and providing a second word comprising updated data bits that form a second one of the N?1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N?1 groups.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: April 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Yin Liu, Yu-Der Chih, Hsueh-Chih Yang, Jonathan Tehan Chen, Kuan-Chun Chen
  • Patent number: 10962878
    Abstract: A method for forming a pellicle apparatus involves forming a device substrate by depositing one or more pellicle layers defined over a base device layer, where a release layer is formed thereover. An adhesive layer is formed over a transparent carrier substrate. The adhesive layer is bonded to the release layer, defining a composite substrate comprised of the device and carrier substrates. The base device layer is removed from the composite structure and a pellicle frame is attached to an outermost one of the pellicle layers. A pellicle region is isolated from a remainder of the composite structure, and an ablation of the release layer is performed through the transparent carrier substrate, defining the pellicle apparatus comprising a pellicle film attached to the pellicle frame. The pellicle apparatus is then from a remaining portion of the composite substrate.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Yin Liu, Chang-Ming Wu, Chia-Shiung Tsai, Xin-Hua Huang
  • Publication number: 20210090672
    Abstract: A circuit includes: writing a plurality of data words, each of which has a plurality of data bits, into respective bit cells of a memory device; in response to determining that not all the data bits of the plurality of data words are correctly written into the respective bit cells of the memory device, grouping the plurality of data words as a plurality of data word sets; and simultaneously rewriting a subset of data bits that were not correctly written into the respective bit cells of the memory device, wherein the subset of the data bits are contained in a respective one of the plurality of data word sets.
    Type: Application
    Filed: December 3, 2020
    Publication date: March 25, 2021
    Inventors: Yu-Der CHIH, Chien-Yin LIU, Yi-Chun SHIH
  • Publication number: 20210054999
    Abstract: A thermally-actuatable gas valve assembly comprising a ceramic heater is shown and described. The gas valve assembly comprises a housing with a gas inlet and a gas outlet. A bimetal thermal actuator has a valve plug that removably seals the gas outlet from the interior of the housing. The ceramic heater is energizable to cause the thermal actuator to deflect which unseats the valve plug from the gas outlet, thereby placing the gas outlet in fluid communication with the gas inlet and the interior of the housing. A gas heating system is also shown and described in which the gas valve assembly selectively supplies cooking gas to a silicon nitride ceramic igniter.
    Type: Application
    Filed: August 17, 2020
    Publication date: February 25, 2021
    Inventors: Jack A. Shindle, Yin Liu, Joseph L. Mark, Jacob Penland
  • Patent number: 10921003
    Abstract: A self-power air refresher system includes an air refresher apparatus and a plant microbial fuel cell (PMFC). The air refresher apparatus includes a fan, a filter located on an air-outlet path of the fan, and an energy storage device connected to the fan. The PMFC is disposed on the air-outlet path and includes soil contained in a container, a plant planted in the soil, and a first and second electrodes. The interaction between roots of the plant and microorganisms near the roots generates electrons, and the electrons are transmitted to the energy storage device through the first and second electrodes installed in the soil so as to enable the energy storage device to supply power to the fan. The air that has passed through the filter enters the soil of the PMFC, and is filtered by the plant and then discharged from the container.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: February 16, 2021
    Assignee: National Tsing Hua University
    Inventors: Han-Yi Chen, Tzu-Yin Liu, Yu-Hsuan Hung, Chung-Sheng Ni, Peng-Hsuan Chiang, Fang-Yi Lin, Shih-Fu Liu
  • Publication number: 20210028466
    Abstract: A microbial fuel cell and a method of manufacturing the same are provided. The microbial fuel cell includes a cathode, an anode, and a microbial community. The anode is made of an activated carbon prepared from waste coffee ground as an electrode material, and the microbial community is adhered to the surface of the activated carbon. Since the activated carbon prepared from waste coffee ground is beneficial for the adhesion of various microbial communities to form a biofilm, the electron transfer efficiency of the microbial fuel cell may be improved.
    Type: Application
    Filed: October 8, 2019
    Publication date: January 28, 2021
    Applicant: National Tsing Hua University
    Inventors: Yu-Hsuan Hung, Han-Yi Chen, Tzu-Yin Liu
  • Patent number: 10904346
    Abstract: Weight image object tagging includes acquiring digital images based on a user browsing webpages, automatically tagging the digital images based on weighting individual image objects, where automatically tagging a digital image of the digital images is based on a relative weighting between objects recognized from that digital image, and building a user preference profile based on recurrences of tags across the digital images.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Yan Bin Fu, Wen Wang, Shuang Yin Liu, Yi Wu, Qing Jun Gao
  • Publication number: 20210013098
    Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.
    Type: Application
    Filed: September 28, 2020
    Publication date: January 14, 2021
    Inventors: Hsun-Chung Kuang, Yen-Chang Chu, Cheng-Tai Hsiao, Ping-Yin Liu, Lan-Lin Chao, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen
  • Patent number: 10861572
    Abstract: A circuit includes: writing a plurality of data words, each of which has a plurality of data bits, into respective bit cells of a memory device; in response to determining that not all the data bits of the plurality of data words are correctly written into the respective bit cells of the memory device, grouping the plurality of data words as a plurality of data word sets; and simultaneously rewriting a subset of data bits that were not correctly written into the respective bit cells of the memory device, wherein the subset of the data bits are contained in a respective one of the plurality of data word sets.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Der Chih, Chien-Yin Liu, Yi-Chun Shih
  • Publication number: 20200381283
    Abstract: In some embodiments, the present disclosure relates to a method for bonding a first wafer to a second wafer. The method includes aligning a first wafer with a second wafer, so the first and second wafers are vertically stacked and have substantially planar profiles extending laterally in parallel. The method further includes bringing the first and second wafers into direct contact with each other at an inter-wafer interface. The bringing of the first and second wafers into direct contact includes deforming the first wafer so that the first wafer has a curved profile and that the inter-wafer interface is localized to a center of the first wafer. The second wafer maintains its substantially planar profile throughout the deforming of the first wafer. The method further includes deforming the first wafer and/or the second wafer to gradually expand the inter-wafer interface from the center to an edge of the first wafer.
    Type: Application
    Filed: June 3, 2019
    Publication date: December 3, 2020
    Inventors: Xin-Hua Huang, Ping-Yin Liu, Chang-Chen Tsao
  • Patent number: 10790189
    Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: September 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsun-Chung Kuang, Yen-Chang Chu, Cheng-Tai Hsiao, Ping-Yin Liu, Lan-Lin Chao, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen
  • Patent number: 10781098
    Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer; receiving a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer; bonding the first dielectric layer with the second dielectric layer; and bonding the first conductive structure with the second conductive structure.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hung-Hua Lin, Ping-Yin Liu, Kuan-Liang Liu, Chia-Shiung Tsai, Alexander Kalnitsky