Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

Abstract: The embodiments are and include an apparatus, system and method for a liquid level monitoring dispenser for association with a liquid filled consumable. The apparatus, system and method may include: a receiver for receiving the consumable upon inversion thereof; at least one electrical contact within the receiver for communicative association with conductive strips on the consumable; a sensing module communicative with the at least one electrical contact and having associated therewith firmware for converting signals associated with the conductive strips and received at the electrical contact to an indication of the liquid level; a communications module for communicating the liquid level to at least a user display and over at least one network; a power module for powering at least the sensing module and the communications module; and at least one dispensing output in fluid communication with the consumable and capable of dispensing the liquid from the consumable to modify the liquid level.

Abstract: Methods, non-transitory machine readable media, and computing devices that more efficiently and effectively manage storage quota enforcement are disclosed. With this technology, a quota ticket comprising a tally generation number (TGN) and a local allowed usage amount (AUA) are obtained. The local AUA comprises a portion of a global AUA associated with a quota rule. The local AUA is increased following receipt of another portion of the global AUA in a response from a cluster peer, when another TGN in the response matches the TGN and the local AUA is insufficient to execute a received storage operation associated with the quota rule. The local AUA is decreased by an amount corresponding to, and following execution of, the storage operation, when the increased local AUA is sufficient to execute the storage operation.

Abstract: A method of forming an optical bench includes forming a reflector layer over a sloping side of a substrate. The method includes depositing a redistribution layer over the substrate. The method includes disposing an under bump metallization (UBM) layer over the redistribution layer. The method includes forming a passivation layer over the redistribution layer and surrounding sidewalls of the UBM layer. The method includes mounting a first optical component over an uppermost portion of the substrate, wherein the reflector layer is configured to reflect an electromagnetic wave from the first optical component, and the first optical component is mounted outside the trench.

Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

Abstract: Methods, non-transitory machine readable media, and computing devices that more efficiently and effectively manage storage quota enforcement are disclosed. With this technology, a quota ticket comprising a tally generation number (TGN) and a local allowed usage amount (AUA) are obtained. The local AUA comprises a portion of a global AUA associated with a quota rule. The local AUA is increased following receipt of another portion of the global AUA in a response from a cluster peer, when another TGN in the response matches the TGN and the local AUA is insufficient to execute a received storage operation associated with the quota rule. The local AUA is decreased by an amount corresponding to, and following execution of, the storage operation, when the increased local AUA is sufficient to execute the storage operation.

Abstract: A method for manufacturing a semiconductor device includes forming a metal layer in a substrate and sequentially forming a barrier layer and an insulating layer on the substrate. The method includes performing a first etching step to form an opening in the insulating layer, and the opening does not expose the barrier layer. After the first etching step, a gap-filling layer is formed on the insulating layer and fills the opening. The method includes performing a second etching step to form a first via communicating with the opening in the gap-filling layer, and an upper portion of the opening is widened to form a trench. The method includes performing a third etching step to remove the gap-filling layer in a bottom of the opening and to deepen both the trench and the opening. The method includes forming a second via communicating with the opening to expose the metal layer.

Abstract: A computer-implemented system for streamlining encryption payload of a card transaction from a transaction code transaction via a merchant inside a restricted computer network firewall. A wallet application stores data of a payment device, and the wallet application retrieves information of a merchant and a transaction via a transaction code. In response to the retrieved information, the wallet application generates an encrypted payload. The wallet application transmits the encrypted payload to a payment facilitator within the restricted computer network firewall. After decryption of the encrypted payload, the payment facilitator transmits a decrypted payload in one payment packet to the payment processing server outside the restricted computer network firewall.

Abstract: A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

Abstract: A respiratory gating phantom device includes a first airbag, a second airbag, a first catheter, a second catheter, a fixture, and an air pressure gating device. The first catheter and the second catheter are respectively installed in the first airbag and the second airbag. The fixture is provided with a phantom tumor and adjustably installed in the first catheter or the second catheter, thereby installing the phantom tumor in the first catheter or the second catheter. The air pressure gating device, connected to the first airbag and the second airbag, inflates and deflates the first airbag and the second airbag to simulate breathing. The first catheter and the second catheter respectively move along three-dimensional direction and two-dimensional direction in response to motions of the first airbag and the second airbag.

Abstract: The embodiments are and include an apparatus, system and method for a liquid level monitoring dispenser for association with a liquid filled consumable. The apparatus, system and method may include: a receiver for receiving the consumable upon inversion thereof; at least one electrical contact within the receiver for communicative association with conductive strips on the consumable; a sensing module communicative with the at least one electrical contact and having associated therewith firmware for converting signals associated with the conductive strips and received at the electrical contact to an indication of the liquid level; a communications module for communicating the liquid level to at least a user display and over at least one network; a power module for powering at least the sensing module and the communications module; and at least one dispensing output in fluid communication with the consumable and capable of dispensing the liquid from the consumable to modify the liquid level.

Abstract: One embodiment of the disclosure relates to a flexible bone fixation device including two first fixation parts and a first flexible spanning part, connected between the two first fixation parts. The first flexible spanning part has a plurality of first cuts spaced apart by one another.

Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

Abstract: A respiratory gating phantom device includes a first airbag, a second airbag, a first catheter, a second catheter, a fixture, and an air pressure gating device. The first catheter and the second catheter are respectively installed in the first airbag and the second airbag. The fixture is provided with a phantom tumor and adjustably installed in the first catheter or the second catheter, thereby installing the phantom tumor in the first catheter or the second catheter. The air pressure gating device, connected to the first airbag and the second airbag, inflates and deflates the first airbag and the second airbag to simulate breathing. The first catheter and the second catheter respectively move along three-dimensional direction and two-dimensional direction in response to motions of the first airbag and the second airbag.

Abstract: A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

Abstract: A microneedle electroporation device is provided, including a housing, a positioning member, an intermediate plate, a first microneedle assembly, a second microneedle assembly, a socket, a first wire, and a second wire. The positioning member is connected to the housing and the intermediate plate. The intermediate plate includes a plurality of first holes and a plurality of second holes. The first microneedle assembly includes a plurality of first microneedles and a first metal connecting portion connected to the first microneedles. The first microneedles pass through the first holes. The second microneedle assembly includes a plurality of second microneedles and a second metal connecting portion connected to the second microneedles. The second microneedles pass through the second holes. The first microneedle assembly and the second microneedle assembly are electrically independent of each other. The first wire connects the socket to the first metal connecting portion.

Abstract: A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.

Abstract: A semiconductor structure includes a substrate having a pixel array region and a first seal ring region, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The semiconductor structure further includes a first isolation feature in the first seal ring region, wherein the first isolation feature is filled with a dielectric material, and the first isolation feature is a continuous structure surrounding the pixel array region. The semiconductor structure further includes a second isolation feature between the first isolation feature and the pixel array region, wherein the second isolation feature is filled with the dielectric material.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first component in a substrate. The semiconductor arrangement includes a gap fill layer. A first portion of the gap fill layer overlies the first component. The first portion of the gap fill layer has a tapered sidewall. A first portion of the substrate separates the first portion of the gap fill layer from the first component.

Abstract: According to an embodiment of the present disclosure, a method of manufacturing semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer and exposing upper portion of the line-end cut pattern; reducing a width of the line-end cut pattern; etching the spacer layer to expose the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the reduced line-end cut pattern as an etch mask.