Abstract: A method for repairing a membrane filtration module in fluid communication with a plurality of additional membrane filtration modules includes fluidly connecting a fluid transfer assembly to the membrane filtration module, fluidly isolating the membrane filtration module from the plurality of additional membrane filtration modules, forcing liquid within the membrane filtration module into the fluid transfer assembly by introducing a pressurized gas into the membrane filtration module, releasing the pressurized gas from the membrane filtration module, fluidly disconnecting the fluid transfer assembly from the membrane filtration module, repairing one or more damaged membranes in the membrane filtration module, and fluidly reconnecting the membrane filtration module to the plurality of additional membrane filtration modules.

Abstract: The present disclosure relates to an apparatus that includes a bottom electrode and a dielectric structure. The dielectric structure includes a first dielectric layer on the bottom electrode and the first dielectric layer has a first thickness. The apparatus also includes a blocking layer on the first dielectric layer and a second dielectric layer on the blocking layer. The second dielectric layer has a second thickness that is less than the first thickness. The apparatus further includes a top electrode over the dielectric structure.

Abstract: A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.

Abstract: Methods, systems, and devices are provided for authenticating API messages using PKI-based authentication techniques. A client system can generate a private/public key pair associated with the client system and sign an API message using the private key of the private/public key pair and a PKI-based cryptographic algorithm, before sending the signed API message to a server system. The server system (e.g., operated by a service provider) can authenticate the incoming signed API message using a proxy authenticator located in less trusted zone (e.g., a perimeter network) of the server system. In particular, the proxy authenticator can be configured to verify the signature of the signed API message using the public key corresponding to the private key and the same cryptographic algorithm. The authenticated API message can then be forwarded to a more trusted zone (e.g., an internal network) of the server system for further processing.

Abstract: A residual toxicant detection device for testing residual toxicant in an aqueous solution is disclosed, which includes a first space cavity, a second space cavity, a connecting frame and a sensing cavity. The first space cavity includes a light source and a lens. The second space cavity includes a photo sensor and a circuit module. The connecting frame is configured to connect the first space cavity and the second space cavity. The sensing cavity for receiving an aqueous solution is formed between the first space cavity and the second space cavity and at one side of the connecting frame. The light source emits a light with a wavelength range. The photo sensor receives the sensing signal of the light passing through the sensing cavity. The circuit module is configured to calculate the absorbance and the variation in absorbance of the residual toxicants in the aqueous solution.

Abstract: A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting stress-releasing structures. The conductive pad comprises a planar portion over the isolation layer, and one or more bridging portions extending through at least the isolation layer and to the interconnect layer for establishing electric contact therewith, wherein there is a trench in the one or more bridging portions. The one or more non-conducting stress-releasing structures are disposed between the isolation layer and the conductive pad. The trench is surrounded by one of the one or more non-conducting stress-releasing structures from a top view.

Abstract: A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

Abstract: Some embodiments relate to a semiconductor package. The package includes a substrate having an upper surface and a lower surface. A first chip is disposed over a first portion of the upper surface of the substrate. A second chip is disposed over a second portion of the upper surface of the substrate. A first plurality of carbon nano material pillars are disposed over an uppermost surface of the first chip, and a second plurality of carbon nano material pillars are disposed over an uppermost surface of the second chip. A molding compound is disposed above the substrate, and encapsulates the first chip, the first plurality of carbon nano material pillars, the second chip, and the second plurality of carbon nano material pillars.

Abstract: Methods, systems, and devices are provided for authenticating API messages using PKI-based authentication techniques. A client system can generate a private/public key pair associated with the client system and sign an API message using the private key of the private/public key pair and a PKI-based cryptographic algorithm, before sending the signed API message to a server system. The server system (e.g., operated by a service provider) can authenticate the incoming signed API message using a proxy authenticator located in less trusted zone (e.g., a perimeter network) of the server system. In particular, the proxy authenticator can be configured to verify the signature of the signed API message using the public key corresponding to the private key and the same cryptographic algorithm. The authenticated API message can then be forwarded to a more trusted zone (e.g., an internal network) of the server system for further processing.

Abstract: A method for fabricating an image sensor device is provided. The method includes forming a plurality of photosensitive pixels in a substrate; depositing a dielectric layer over the substrate; etching the dielectric layer, resulting in a first trench in the dielectric layer and laterally surrounding the photosensitive pixels; and forming a light blocking structure in the first trench, such that the light blocking structure laterally surrounds the photosensitive pixels.

Abstract: A semiconductor structure includes a sensor chip. The sensor chip includes a pixel array region, a bonding pad region, and a periphery region surrounding the pixel array region. The semiconductor structure further includes a stress-releasing trench, wherein the stress-releasing trench is in the periphery region, and the stress-releasing trench fully surrounds a perimeter of the pixel array region and the bonding pad region.

Abstract: A bio-chip package comprises a substrate a first layer over the substrate comprising an image sensor. The bio-chip package also comprises a second layer over the first layer. The second layer comprises a waveguide system a grating coupler. The bio-chip package also comprises a third layer arranged to accommodate a fluid between a first-third layer portion and a second-third layer portion, and to allow the fluid to pass from a first side of the third layer to a second side of the third layer. The third layer comprises a material having a predetermined transparency with respect to a wavelength of a received source light, the waveguide system is configured to direct the received source light to the grating coupler, and the image sensor is configured to determine a change in the wavelength of the source light caused by a coupling between the source light and the fluid.

Abstract: A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.

Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

Abstract: A bending sensing device comprises a substrate, a piezoresistive thin film and at least a pair of electrodes. The substrate is flexible and having a two-dimensional structure, and a material of the substrate is mica. The piezoresistive thin film is disposed on the substrate whose material is inorganic compound comprising zinc oxide (ZnO), doped ZnO, germanium (Ge), doped Ge, or any combinations thereof. The at least a pair of electrodes are disposed separately on two terminals of at least a measurement section of the piezoresistive thin film to electrically connect the measurement section.

Abstract: A residual toxicant detection device for testing residual toxicant in an aqueous solution is disclosed, which includes a first space cavity, a second space cavity, a connecting frame and a sensing cavity. The first space cavity includes a light source and a lens. The second space cavity includes a photo sensor and a circuit module. The connecting frame is configured to connect the first space cavity and the second space cavity. The sensing cavity for receiving an aqueous solution is formed between the first space cavity and the second space cavity and at one side of the connecting frame. The light source emits a light with a wavelength range. The photo sensor receives the sensing signal of the light passing through the sensing cavity. The circuit module is configured to calculate the absorbance and the variation in absorbance of the residual toxicants in the aqueous solution.

Abstract: An image data retrieving method and an image data retrieving device are provided. The image data retrieving method includes: receiving an image including a plurality of data from a communication interface; obtaining a plurality of regions of interest from the image, wherein each of the regions of interest is a data image including at least one of the data; dividing the regions of interest into a plurality of groups, wherein at least one of the data included in the regions of interest of each of the groups has a same type; combining the regions of interest of each of the groups into a to-be-recognized image; and performing an optical character recognition to the to-be-recognized image corresponding to each of the groups respectively to obtain the data corresponding to the regions of interest of each of the groups.

Abstract: A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting stress-releasing structures. The conductive pad comprises a planar portion over the isolation layer, and one or more bridging portions extending through at least the isolation layer and to the interconnect layer for establishing electric contact therewith, wherein there is a trench in the one or more bridging portions. The one or more non-conducting stress-releasing structures are disposed between the isolation layer and the conductive pad. The trench is surrounded by one of the one or more non-conducting stress-releasing structures from a top view.

Abstract: Method and system for calibrating a plurality of voltages of a light-emitting element and a plurality of grayscale values of a respective pixel of the light-emitting element on a display panel are provided. The method may include determining a mapping correlation between the plurality of voltages of the light-emitting element and a plurality of luminance values of the light-emitting element, determining N grayscale values of the pixel, and determining N first luminance values each corresponding to the respective one of the N grayscale values. The method may also include determining N first voltages mapped to the N first luminance values using the mapping correlation and determining, of each one of the N first luminance values, (M?1) second luminance values. Each one of the (M?1) second luminance values may correspond to a different dimmed luminance value of the respective first luminance value.