Abstract: An electrically erasable programmable read-only memory (“CMOS NON-VOLATILE MEMORY”) cell is fabricated using standard CMOS fabrication processes. First and second polysilicon gates are patterned over an active area of the cell between source and drain regions. Thermal oxide is grown on the polysilicon gates to provide an isolating layer. Silicon nitride is deposited between the first and second polysilicon gates to form a lateral programming layer.

Abstract: Provided are a highly efficient phosphorescent organometallic complex and an organic electroluminescent (EL) device using the same. The organometallic complex can be used in the formation of an organic layer of the organic EL device, and can emit light in a red wavelength range as a highly efficient phosphorescent material. The organic EL device using the organometallic complex can exhibit high brightness and a low driving voltage.

Abstract: A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, forming a first gate conductive layer over the gate insulation layer, forming a barrier metal over the first gate conductive layer, sequentially forming a second gate conductive layer and a gate hard mask over the barrier metal, patterning the gate hard mask, the second gate conductive layer, the barrier metal, the first gate conductive layer, and the gate insulation layer to form a gate pattern, and performing a plasma selective gate re-oxidation process on the gate pattern.

Abstract: An apparatus for providing duplicated shelf managers in an ATCA system is provided. The apparatus for providing duplicated shelf managers includes a hub/switch in a control backplane to allow a manager to access the duplicated shelf managers all the time from an external network while maintaining the switch configuration defined of the ATCA specification. The hub/switch connects Ethernet ports of the duplicated two shelf managers and Ethernet ports of the two switches at the same time, and connects the two shelf managers and the two switches to the Internet.

Abstract: A phase change memory device is manufactured by forming a sacrificial layer and a hard mask layer on a lower electrode; performing a first etching these layers and forming on the lower electrode a first stack pattern having a first width less than a width of the lower electrode; performing a second etching the first stack pattern and forming a second stack pattern having a second width less than the first width; forming an insulation to cover the second stack pattern; CMPing the insulation layer to expose the sacrificial layer; removing the sacrificial layer to define a contact hole; forming a lower electrode contact in the contact hole; and forming a phase change layer and an upper electrode on the insulation layer including the lower electrode contact. By manufacturing the phase change memory device in this manner, the size of the contact hole can be decreased and uniformly defined.

Abstract: A method and system for testing a semiconductor device is disclosed. The method provides an integrated test program defined by a plurality of test items, and a test program defined by a sub-set of the test items. Test data is derived by batch sample testing of the semiconductor device, and an error rate for a test item is computed and then compared to a reference data value. On the basis of the comparison between the error rate and the reference data value, the test program may be modified in real-time.

Abstract: A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.

Abstract: A method and apparatus for recording time information for received digital data streams are provided. The method includes recording first time information and second time information on a recording medium. The first time information is part of management data for managing presentation data and the second time information is time information of the presentation data. The format of the first time information coincides with the format of the second time information.

Abstract: A data management system or “DMS” provides data services to data sources associated with a set of application host servers. The data management system typically comprises one or more regions, with each region having one or more clusters. A given cluster has one or more nodes that share storage. When providing continuous data protection and data distribution, the DMS nodes create distributed object storage to provide the necessary real-time data management services. The objects created by the DMS nodes are so-called active objects. The distributed object store can be built above raw storage devices, a traditional file system, a special purpose file system, a clustered file system, a database, and so on. According to the present invention, the DMS active object store provides an indexing service to the active objects. In an illustrative embodiment, any object property that has a given attribute is indexed and, as a result, the attribute becomes searchable.

Abstract: A reflective-transmissive liquid crystal display (LCD) device with an improved display quality is achieved by forming a reflective area and a transmissive area having a cell gap greater than greater than that of the reflective area. A liquid crystal layer is disposed in a liquid crystal cell between the first and second substrates. The liquid crystal molecules are normally aligned at an angle equal to greater than about 45° with respect to a line parallel to the first substrate. The LCD device operates in a normally black mode.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.

Abstract: A method for manufacturing a semiconductor memory device using asymmetric junction ion implantation, including performing ion implantation for adjusting a threshold voltage to a semiconductor substrate, forming a gate stack on the semiconductor substrate to define a storage node junction region and a bit line junction region, implanting a first conductive impurity ion and a second conductive impurity ion using a mask layer pattern covering the storage node junction region while exposing the bit line junction region, forming a gate spacer layer at both sides of the gate stack, and implanting the first conductive impurity ion using the gate stack and the gate spacer layer as an ion implantation mask layer to form a storage node junction region and a bit line junction region having different impurity concentrations, and different junction depths from each other.

Abstract: A display device includes a plurality of pixels, wherein each pixel includes: a light emitting element; a first capacitor connected between a first node and a second node; a driving transistor having an input terminal, an output terminal, and a control terminal connected to the second node where the driving transistor supplies a driving current to the light emitting element to emit light; a first switching unit supplying a first reference voltage to the driving transistor according to a first scanning signal and connecting the first node to a data voltage or the driving transistor; and a second switching unit supplying a driving voltage to the driving transistor according to a second scanning signal and connecting the first node to the data voltage. Accordingly, variations in threshold voltage of the driving transistor can be compensated for so that it is possible to display a uniform image.

Abstract: A method for detecting the coordinates of multiple touching objects on an infrared touch screen, embodied on an apparatus, includes measuring and storing the maximum received level of a pair of infrared emitting and receiving elements, and initializing an index variable for identification of multiple touched spots, determining that the screen has been touched when a received level of a pair of infrared emitting and receiving elements, emission and reception of which is impeded by an object, is less than the maximum level, measuring the minimum level to detect center coordinates of the object, and reading an index variable for the center coordinates and determining that the center coordinates are new and setting an index variable for the center coordinates if no index variable is read for the center coordinates and storing the center coordinates and the index variable for the center coordinates.

Abstract: A method of forming a polycrystalline thin film for a thin film transistor, a mask used in the method, and a method of making a flat panel display device using the method of forming a polycrystalline thin film for a thin film transistor are disclosed. Certain embodiments are capable of providing a display device in which the polycrystalline thin film is uniformly crystallized such luminance non-uniformity is reduced. In the method of forming a polycrystalline thin film for a thin film transistor, amorphous material is crystallized using a laser and a mask having a mixed structure of one or more transmission region sets each comprising one or more transmission regions through which the laser beam is capable of passing and one or more non-transmission regions through which the laser beam is not capable of passing. The laser beam is directed onto overlapping regions of the material.

Abstract: The present invention discloses a submerged hollow fiber membrane module which is of such a structure that it is easy to expand a module processing capability according to a treatment capacity, provides convenient module coupling properties and module manufacturing properties, maintains a stable flux under an efficient air diffusion condition and prevents the damage of membranes and water leakage caused by the loosening of module connecting regions.

Abstract: Disclosed is a laser processing apparatus for minimizing generation of sludge and enhancing the processing efficiency while processing an object. The laser processing apparatus includes a beam irradiator for emitting a laser beam from a laser light source, a beam scanner for operating the laser beam emitted from the beam scanner, to be irradiated on a predetermined interval of a processing position of the object repeatedly on the straight, and a condensing lens for regulating a focus of the laser beam emitted from the beam irradiator. The object is movable at least once along a processing direction during processing the object. According to the present invention, it is able to improve the processing efficiency and to work an object with a uniform morphology by using a mask filtering a laser beam irradiated at a rotation turning point of a beam scanning mirror, capable of continuously irradiating a laser beam by deforming the laser beam into an elliptical pattern.

Abstract: Transfecting biology cells with nucleic acid molecules (DNA, siRNA) is an essential prerequisite in elucidating how genes function in complex cellular context and how their activities could be modulated for therapeutic intervention. Traditionally studies are carried out on a low throughput gene-by-gene scale, which has created a huge bottleneck in functional genomic study and drug discovery. Development of high-throughput cell transfection technology will permit functional analysis of massive number of genes and how their activities could be modulated by chemical or biological entities inside cells. This invention describes design, construction of device and apparatus for high throughput effective cell transfection. Procedures and protocols for using the device and apparatus are also described in the application. Novel methods of using the device in cell-based assays are also disclosed.

Abstract: Multi-stage in-line cartridge ejectors for a fuel cell system provided herein comprise: at least one ejector main body for supplying hydrogen, each ejector main body including a plurality of nozzles arranged in line with a predetermined gap, in which the diameters of the respective nozzles become larger from an inlet side of the ejector main body toward an outlet side thereof, and a plurality of sub-inlets formed on an outer surface of the ejector main body to be connected to the gap or gaps between the nozzles; and a housing accommodating the eject main body and including a main inlet for intake of recirculated hydrogen. The multi-stage in-line cartridge ejectors can improve the system performance by increasing the amount of recirculated hydrogen. Moreover, at least one check valve is provided at an intake position of the cartridge ejectors to effectively prevent reverse flow of recirculation hydrogen gas and at least one heater is provided around the cartridge ejectors to improve cold startability.

Abstract: A method of operating a wireless universal serial bus (USB) apparatus and the wireless USB apparatus using the same. The method including: receiving operation state information from a neighboring wireless USB apparatus in a beacon period (BP); the wireless USB apparatus, which is operating as a host in a first cluster by using the operation state information, identifying a distributed reservation protocol (DRP) corresponding to a second cluster; and the wireless USB apparatus, which is operating as the host in the first cluster, participating in the second cluster as a device by transmitting and receiving data in the DRP corresponding to the second cluster. Accordingly, the wireless USB apparatus which operates as a host may participate in a neighboring WUSB cluster as a device.