Abstract: An enamel coating including a phosphate-based ingredient is provided on an inner surface of a cooking chamber and the inner surface of the cooking chamber is cleaned using high-temperature cleaning water. Therefore, the cleaning of the cooking chamber can be performed more efficiently.

Abstract: In a non-volatile memory device and a method of manufacturing the non-volatile memory device, a tunnel insulating layer, a charge trapping layer, a dielectric layer and a conductive layer may be sequentially formed on a channel region of a substrate. The conductive layer may be patterned to form a gate electrode and spacers may be formed on sidewalls of the gate electrode. A dielectric layer pattern, a charge trapping layer pattern, and a tunnel insulating layer pattern may be formed on the channel region by an anisotropic etching process using the spacers as an etch mask. Sidewalls of the charge trapping layer pattern may be removed by an isotropic etching process to reduce the width thereof. Thus, the likelihood of lateral diffusion of electrons may be reduced or prevented in the charge trapping layer pattern and high temperature stress characteristics of the non-volatile memory device may be improved.

Abstract: Delta-sigma analog-to-digital converters (ADCs) and methods to calibrate methods to delta-sigma ADCs are disclosed. In one particular example, a delta-sigma ADC is described, including an n-bit feedback digital-to-analog converter (DAC) having a number of unit elements, and is configured to provide a feedback signal to a summing device, which generates a difference signal based on an analog input signal and the feedback signal. An n-bit ADC is included to generate an n-bit digital signal based on the difference signal. A dynamic element matching device selects one or more unit elements in the DAC based on the n-bit digital signal. A storage device, such as a memory, stores error coefficients corresponding to the plurality of unit elements. Finally, a digital corrector is included to receive the selection of unit elements, receive error coefficients corresponding to the selected unit elements, and adjust the n-bit digital signal based on the received error coefficients.

Abstract: A characteristic tracking method for a battery module including at least one battery is disclosed. A look-up table is provided according to a primary characteristic of the battery. It is determined whether a battery has satisfied a preset condition when the battery module is operated from a usage state to an idling state. The battery is measured to have obtained a first voltage and a real capacity when the battery satisfies the preset condition. The measured first voltage is utilized to locate a table capacity of the battery from the look-up table. The look-up table is updated according to the real capacity and the table capacity. A peripheral circuit of characteristic tracking method has been exhibited.

Abstract: A liquid crystal display and a display system including the same are provided in one or more embodiments. For example, a liquid crystal display may include for an embodiment a bi-directional channel, a memory in which driving signal generation data including information required to generate a plurality of driving signals and EDID (Extended Display Identification Data) are stored, and a timing controller which receives the driving signal generation data and the EDID from the memory and transmits the EDID to the outside through the bi-directional channel. The driving signal generation data and the EDID may be transmitted from the memory to the timing controller via a single interface. A first time period during which the driving signal generation data is transmitted may not overlap with a second time period during which the EDID is transmitted.

Abstract: A method and apparatus for closing a vascular wound includes a guidewire and/or other surgical implement extending from the wound. A hemostatic material is advanced over the surgical implement and into contact with an area of the blood vessel surrounding the wound. The surgical implement is removed. Blood soaks the hemostatic material, and blood clotting is facilitated by the hemostatic agent within the material. A sealing layer of adhesive can be applied to the hemostatic material, confining the blood flow to the material. Thus, the vascular puncture wound is sealed by natural blood clot formation.

Abstract: A method of fabricating a chip package structure includes the steps of providing a lead frame having a die pad, plural leads and at least one structure enhancement element. A chip is then disposed on the die pad and plural bonding wires are formed to electrically connect the chip to the leads. Then, an upper encapsulant and a first lower encapsulant are formed on an upper surface and a lower surface of the lead frame, respectively. The first lower encapsulant has plural concaves to expose the structure enhancement element. Finally, the structure enhancement element is etched with use of the first lower encapsulant as an etching mask until the die pad and one of the leads connected by the structure enhancement element, or two of the adjacent leads connected thereby are electrically insulated.

Abstract: A hybrid integrated structure of an optical active device and a Planar Lightwave Circuit (PLC) device using an optical fiber array is provided, in which one or more photodiodes are integrated on an upper cladding layer above one or more planar optical waveguides. A section located on a boundary surface between output optical waveguides, that is, an end of the PLC device in the direction of propagation of light, and the input end of an output optical fiber array is ground to be inclined at a predetermined angle with respect to an optical axis. Further, one or more optical fibers and one or more reflection mirrors are alternately arranged, inserted, and disposed in a plurality of V-shaped trenches formed in the output optical fiber array.

Abstract: A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.

Abstract: Provided is a method for transmitting a burst in an optical burst switching system, in which when a burst is generated at an originating node, a burst control packet is transmitted to a destination node by way of a plurality of nodes and then a data burst is transmitted after a pre-allocated offset time. The method includes the steps of obtaining an arrival time of data bursts that survive competition to occupy an output channel among data bursts transmitted to the next node by way of the current node using offset time information in burst control packets for the survived data bursts, checking whether an empty void is present between the survived data bursts by using the obtained arrival time of the survived data bursts, and generating a new data burst originating from the current node, inserting the newly generated data burst into the checked empty void, and transmitting to the next node. This method can improve channel utilization and maximize performance of the optical burst switching system.

Abstract: Provided is a method for manufacturing a semiconductor device. In the method, a gate oxide layer, a gate polysilicon layer, and a capping oxide layer are sequentially formed on a semiconductor substrate. A photoresist pattern is formed on the capping oxide layer. The capping oxide layer, gate polysilicon layer, and gate oxide layer are sequentially etched using the photoresist pattern as an etch mask. Ions are then implanted into the semiconductor substrate using the photoresist pattern as a mask. A thermal diffusion process is performed to form source/drain regions. The capping oxide layer is removed, and ions are implanted into the gate polysilicon layer. After metal is deposited on the gate polysilicon layer, a silicide is formed.

Abstract: Metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions and methods of fabricating the same are provided. The MOS transistors may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided on bottom surfaces of the recessed regions. High concentration impurity regions are provided in the epitaxial layers. The recessed regions may be formed using a chemical dry etching techniques.

Abstract: There is provided a method for transmitting data to a multicast group including a plurality of receivers by using an X-cast mode, comprising the steps of transmitting an X-cast IP data packet having a X-cast header including addresses of a destination router and the multicast group, wherein the destination router is connected to the receivers, converting the X-cast IP data packet to a multicast IP data packet in the destination router and sending the multicast IP data packet to the receivers, wherein an IP header of the multicast IP data has the address of the multicast group. The source router can transmit an IP data packet to a multicast group having a medium or large number of receivers by using the X-cast mode.

Abstract: A flash memory device may include a pump, a regulator to control the pump so that an output voltage of the pump is substantially maintained at a target voltage, and a control circuit to control the regulator so that the pump selectively generates a program voltage or an erase voltage. In some embodiments, the output voltage of the pump may be stepped in response to program loop iterations during a program operation, or set to a target voltage during an erase operation.

Abstract: The present invention relates generally to an electric non-contact apparatus and method for taking electrocardiograms and, more particularly, to an electric non-contact apparatus and method for taking electrocardiograms, in which an examinee can have an electrocardiogram taken in a comfortable position because the apparatus and method are applied to a chair, a bed or a vehicle seat, which are widely used in daily life, and in which the examinee can unnoticeably have an electrocardiogram taken without being conscious of the taking of the electrocardiogram because the taking of the electrocardiogram is performed on the body of a human wearing clothes without directly contacting the body.

Abstract: Provided is a micro-fluidic heating system, which comprises a micro-fluidic control element for providing a chamber, a flow path and a valve, and a main body for heating the inside of the chamber in contact with the micro-fluidic control element, wherein the micro-fluidic control element consists of an upper substrate for providing the chamber, the flow path and the valve, and a lower substrate as a thin film bonded to the upper substrate, and the main body consists of a membrane in which heating means and suction holes are formed, and support member for supporting the membrane, and the heating means is partially in contact with the lower substrate of the chamber to heat the inside of the chamber, so that thermal transfer efficiency becomes maximized and temperature of each chamber may be independently controlled in the case of configuration having chambers arranged in array.

Abstract: A display panel has a protection film having a recess. The recess is arranged above a storage electrode and corresponds to a location of the storage electrode in a plan view. A width of the recess is larger in plan view than a width of the storage electrode, and a pixel electrode is arranged on the protection film. The capacitance of a storage capacitor formed by charges stored in the pixel electrode and the storage electrode is determined by a thickness of the protection film and an overlapping area of the pixel electrode and the storage electrode.

Abstract: A detachable liquid crystal display device includes a liquid crystal module and a cradle. The liquid crystal module includes a liquid crystal panel; an optical sheet provided on a rear surface of the liquid crystal panel; an interface disposed on a rear surface of the liquid crystal panel; a power receiver disposed on the rear surface of the liquid crystal panel; a memory card; and a timing controller for receiving second image data from external devices and permitting the first image data stored in the memory card to be displayed in the liquid crystal panel. The cradle includes a lamp emitting light; an inverter for supplying alternating current to the lamp; a connector for receiving third image data from external equipment; and an interface converter for applying the third image data to the interface of the liquid crystal module.

Abstract: An apparatus and method for generating a terahertz (THz) wave are provided. The apparatus comprises: an fiber optic probe injecting an optical wave transmitted through an optical fiber into a device under test (DUT); a driving oscillator generating and injecting an electrical wave into the DUT; and the device under test (DUT) generating a THz wave using the produced optical and electrical waves.

Abstract: A battery management system to estimate a state of charge of a battery and a driving method thereof includes a sensing unit and a micro control unit. The sensing unit measures a battery voltage. The MCU measures a first time and a second time, detects first and second battery voltages that respectively correspond to the first and second times from the battery voltage, estimates an open circuit voltage by the first and second voltages, and establishes the SOC that corresponds to the OCV.