Abstract: A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.

Abstract: Provided are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a plurality of active pillars projecting from a semiconductor substrate, a gate pattern disposed on at least a portion of each of the active pillars with a gate insulator interposed therebetween, and a conductive line disposed on each of the active pillars and below the corresponding gate pattern, the conductive line may be insulated from the semiconductor substrate and the gate pattern, wherein each of the active pillars may include a drain region above the corresponding gate pattern, a body region adjacent to the corresponding gate pattern, and a source region that is in contact with the conductive line below the gate pattern.

Abstract: A method for measuring a self-interference (SI) which occurs in a relay and controlling radio resources of a base station based on the measured SI, and a mobile telecommunication system using the same. The mobile telecommunication system includes a relay which calculates intensity of SI; and a base station which performs radio resource management based on the calculated SI intensity. The method for measuring SI includes calculating intensity of SI using a relay; and performing radio resource management at a base station based on the calculated SI intensity.

Abstract: A multilayer insulated wire has a conductor and two or more extrusion-insulating layers to cover the conductor, wherein at least one layer of the insulating layers other than an innermost layer is formed by a resin mixture containing a polyphenylene sulfide resin (A) as a continuous phase and an olefin-based copolymer ingredient (B) as a dispersed phase, or wherein at least one layer of the insulating layers other than an innermost layer is formed by a resin mixture containing a polyphenylene sulfide resin (A) as a continuous phase, and an olefin-based copolymer ingredient (B) and a polyamide (E) as a dispersed phase; a transformer is made by the multilayer insulated wire.

Abstract: A keyboard-input information-security apparatus and method are provided.

Abstract: An optical disc drive, including a main frame a tray disposed such that the tray is to be inserted into or ejected from the main frame to load or unload a disc and a tray holding unit to press bias the tray, when the loading/unloading of the tray is completed, so as to restrict the vertical and lateral movement of the tray when the loading/unloading of the tray is completed.

Abstract: A regulator and a method for regulating include sensing an input voltage at a sensing unit and outputting a sensed voltage to a sensed voltage node. A bypassing unit receives the input voltage, bypassing the sensing unit, and applies the input voltage to the sensed voltage node. A comparison unit compares a the sensed voltage from the sensed voltage node to a reference voltage and outputs a comparison result signal.

Abstract: The present invention is related to a beam division multiple access system and a method thereof. The base station according to the present invention comprises a initial mobile station information receiver for receiving initial mobile station information that a mobile station omnidirectionally transmits in an initial communication step, a mobile station location and speed detector for detecting a location and a moving speed of the mobile station from the initial mobile station information, a downlink beam generator for generating a downlink beam based on the location and the moving speed of the mobile station transferred from the mobile station location and speed detector, and adjusting at least one of a width and a direction of each the downlink beam, and a downlink beam transmitter for transmitting the downlink beam generated by the downlink beam generator to the mobile station through a phase array antenna.

Abstract: A method of recognizing states and locations of user equipment in a network by using a random access (RA) channel at a base station without alteration of the conventional network environment or configurations of user equipment. A mobile communication system of an embodiment includes a first base station; and one or more second base stations having service regions smaller than a service region of the first base station. The first base station is operable to broadcast configuration information to the user equipment for connecting to at least one of the one or more second base stations. The user equipment is operable to transmit an uplink signal to at least one of the one or more second base stations in accordance with the configuration information received from the first base station, and at least one of the one or more second base stations is operable to transmit information on the user equipment that transmitted the uplink signal to the first base station after receiving the uplink signal.

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract: Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.

Abstract: A liquid crystal display device and a method of driving the same are provided for one or more embodiments. The liquid crystal display device includes: a liquid crystal panel including a plurality of display blocks and displaying an image in response to image signals; a plurality of light-emitting blocks emitting light to the liquid crystal panel and corresponding to the plurality of display blocks; a first look-up table including a normalized value obtained by normalizing an initial duty ratio corresponding to the brightness of the image to a maximum duty ratio corresponding to the maximum brightness of the image; and a timing controller receiving the normalized value corresponding to each of the light-emitting blocks from the first look-up table and using the normalized value to provide an optical data signal corresponding to each of the light-emitting blocks.

Abstract: A developing unit provided in an image forming apparatus includes a regulating member that improves developer layer regulation performance. The developing unit is configured to feed developer to a photoconductor, on which an electrostatic latent image is formed, to form an image. The regulating member of the developing unit includes a bending portion contacting an outer peripheral surface of a developing device provided in a frame of the developing unit. The width of the regulating member is variable to increase rearward from the bending portion. The regulating member may further include an extension portion extending from the bending portion. Sealing members may be attached to both ends of the frame of the developing unit so as to contact the respective ends of the bending portion.

Abstract: A high-voltage sawtooth current driving circuit and a memory device including the same are described. In the high-voltage sawtooth current driving circuit includes a charge pump circuit configured to output a first voltage, a regulating circuit configured to regulate a second voltage using the first voltage output from the charge pump circuit, and a sawtooth current driver configured to generate a sawtooth current in response to the second voltage regulated by the regulating circuit.

Abstract: A method of driving a light source of a light source module including a red light source, a green light source and a blue light source, includes sensing a luminous intensity of the environment; and adjusting a wavelength of light generated from the light source module according to the luminous intensity of the environment.

Abstract: A light source apparatus includes a light source module, a local dimming control part and a light source driving part. The light source module includes a plurality of light-emitting blocks. Each of the light-emitting blocks includes a first color light source, a second color light source and a third color light source, respectively. The local dimming control part drives the light-emitting blocks by blocks. The local dimming control part sets a reference duty signal for first, second and third color driving signals in accordance with a driving mode of the light source module. The light source driving part generates the first color driving signal, the second color driving signal and the third color driving signal by using the reference duty ratio set in accordance with the driving mode and a driving current having a same peak current level in accordance with the driving mode.

Abstract: A method of driving a light source in a normal mode and an increased luminance mode, based on a gradation data of an image signal, by using driving blocks each having a plurality of light-emitting blocks, includes applying, during the increased luminance mode, both a first driving voltage which drives a first driving block of the driving blocks during the normal mode, and a second driving voltage which drives a second driving block of the driving blocks during the normal mode, to the first driving block to increase a luminance of the first driving block when the first driving block is driven by a luminance greater than a luminance corresponding to the gradation data of the image signal.

Abstract: A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first impurity region. The single crystalline semiconductor pattern may be on the first impurity region. The single crystalline semiconductor pattern has a pillar shape substantially perpendicular to the substrate. A second impurity region may be formed in an upper portion of the single crystalline semiconductor pattern. The gate insulation layer structure may include a charge storage pattern, the gate insulation layer structure on a sidewall of the single crystalline semiconductor pattern. The gate electrode may be formed on the gate insulation layer structure and opposite the sidewall of the single crystalline semiconductor pattern. The gate electrode has an upper face substantially lower than that of the single crystalline semiconductor pattern.

Abstract: In a semiconductor device, and a method of manufacturing thereof, the device includes a substrate of single-crystal semiconductor material extending in a horizontal direction and a plurality of interlayer dielectric layers on the substrate. A plurality of gate patterns are provided, each gate pattern being between a neighboring lower interlayer dielectric layer and a neighboring upper interlayer dielectric layer. A vertical channel of single-crystal semiconductor material extends in a vertical direction through the plurality of interlayer dielectric layers and the plurality to of gate patterns, a gate insulating layer being between each gate pattern and the vertical channel that insulates the gate pattern from the vertical channel.

Abstract: A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns.