Abstract: A method of manufacturing a double-sided high-temperature superconducting oxide thin film comprises the steps of placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter piercing through a separator of the thin film deposition chamber; rotating the single crystal oxide substrate, placing two substrate heaters toward both surfaces of the single crystal oxide substrate, and heating the single crystal oxide substrate thereby; applying a power to sputter to the sintered material targets; and depositing a target material on both surfaces of the single crystal oxide substrate by having plasma generated from the two sintered material targets contact thereon.

Abstract: A bonding pad is described. A substrate having integrated circuits formed therein is provided. A dielectric layer having several trench structure formed therein is formed over the substrate, and each trench structure has several trenches radially arranged in the dielectric layer. A conductive layer is formed on the dielectric layer and fills the trenches, and the conductive layer is electrically coupled to the integrated circuits in the substrate through the trenches, respectively. By using the invention, the adhesion of the dielectric layers and the metal layers can be greatly improved and the compressive mechanical stress can be uniformly released to the substrate even if the wire width of the integrated circuit is reduced to the sub-micron level.

Abstract: A method and apparatus for treating exhaust gas produced from the combustion of fuels is disclosed. Pollutants such as unburnt hydrocarbons, carbon monoxides, oxides of nitrogen and oxides of sulfur are oxidized by ozone in an ozone contractor, and then resolved by water vapor in a muffler, so that they can be reduced.

Abstract: A semiconductor device having a plurality of transistors connected in series in a semiconductor substrate, the device includes first and second gate electrodes on the semiconductor substrate, a punch-through stop layer in the semiconductor substrate below the first gate electrode at a predetermined depth, and first, second, and third heavily doped impurity regions in the semiconductor substrate at both sides of the first and second gate electrodes.

Abstract: Disclosed are methods for preventing and/or treating autoimmune and inflammatory diseases in mammals using a pharmaceutical composition containing a pharmaceutically acceptable carrier and an effective amount of a thiether furan nitrone compound.

Abstract: Disclosed are methods for treating a patient with an acute central nervous system or cardiovascular disorder or a neurodegenerative, autoimmune or inflammatory disease using a pharmaceutical composition containing a pharmaceutically acceptable carrier and an effective amount of a furan nitrone compound.

Abstract: Disclosed are novel .alpha.-aryl-N-alkylnitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compositions are useful as therapeutics for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals and as analytical reagents for detecting free radicals.

Abstract: Disclosed are processes for preparing furan nitrone compounds using a furan carbonyl compound and a hydroxylamine compound.

Abstract: A micro etching system using laser ablation includes a laser generator, an optical fiber waveguide, a laser beam focusing device and a sample platform. The laser generator generates an ultraviolet beam, and the optical fiber waveguide carries the laser beam radiated from the laser generator to the material to be etched. The focusing device is provided between the laser generator and optical fiber waveguide and serves to concentrate the laser beam into the optical fiber. The sample platform controls the position of the material to be etched so that the material is etched at a predetermined angle by the beam emitted from the outlet of the optical fiber waveguide.

Abstract: A two-layer buried oxide enables fabrication of a silicon-on-insulator MOSFET with thick-film source/drain regions and a thin-film channel region. After a hole has been etched in the substrate above a first buried oxide layer (i.e., in the upper substrate), oxygen is implanted to form a second buried layer within the substrate below the first buried layer (i.e., within the lower substrate). After a hole (aligned with the hole through the upper substrate) has been etched in the first buried layer, p-type dopants are implanted to form upper doped regions within the upper substrate to either side of the holes and a lower doped region within the lower substrate below the holes but above the second buried layer. An epitaxial layer roughly as thick as first buried layer is grown on the upper and lower substrates, a conformal insulating film is deposited onto the epitaxial layer, and a gate electrode is formed on the on the insulating film.

Abstract: Disclosed are novel thiophene nitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compositions are useful as therapeutics for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals and as analytical reagents for detecting free radicals.

Abstract: Disclosed are novel thioether furan nitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compositions are useful as therapeutics for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals and as analytical reagents for detecting free radicals.

Abstract: Disclosed are furansulfonic acid derivatives and pharmaceutical compositions containing such derivatives. The disclosed compositions are useful for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals.

Abstract: Disclosed is a multi-target manipulator for a pulsed laser deposition apparatus. The multi-target manipulator for a pulsed laser deposition apparatus grows a thin film having both a high quality and a repeatability, automatizes a deposition apparatus, and economically performs a pulsed laser deposition, when a thin film is grown by using a pulsed laser deposition apparatus.

Abstract: Disclosed are furan nitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compounds are useful as analytical reagents for detecting free radicals and as therapeutics for treating a wide variety of medical dysfunctions and diseases.

Abstract: A voice announcement technique for directly accessing a memory containing voice announcement data stored therein at the final output stage of the base station unit of a CT-2 digital cordless telephone system includes: a memory for storing voice announcement data therein; a conversion unit for converting voice announcement data received from the memory into a radio signal according to a CT-2 format, and for outputting the radio signal, a direct memory access control unit for accessing the data from the memory in a direct memory access manner when receiving a transfer request signal, and for sending the accessed data to a data bus, and an interface unit coupled between the conversion unit and the direct memory access control unit, the interface unit dividing the frequency of a direct memory access clock output from the conversion unit, and for generating the transfer request signal, while sending the data on the data bus to the conversion unit when the direct memory access control unit generates a transfer ackn

Abstract: A polypeptide having immunological activity for use as a diagnostic reagent for the HIV. The polypeptide comprises a substantial portion of each of more than one of the constituent proteins coded for by the HIV-pol gene, namely the amino acid sequences of the reverse transcriptase, RNase H and integrase enzymes coded for by the HIV-pol gene and the amino acid sequences of part of the protease enzyme coded for by the HIV-pol gene, but omitting the active site responsible for proteolytic activity.

Abstract: A coaxial connector for microwave and millimeter wave measurement can be used by attachment to a vacuum chamber for instrumentation when measuring a high frequency characteristic for various electronic devices at low temperature. The coaxial connector connects microwave instrumenting equipment to a device to be tested within vacuum chamber (e.g., so as to measure a low temperature and high frequency characteristic for a high frequency device). It includes a support plate for attachment to the vacuum chamber and a support screw to prevent the coaxial connector from rotating. The support screw is of hexagonal shape in the exemplary embodiment and is arranged to one side on the center of the support plate. A coaxial cable transmits the measured signal and is extended to pass through the center of the support plate and support screw, and a V-shape connector on each end of the cable for respectively coupling between a fixed sample stand in the vacuum chamber and the microwave instrument equipment.

Abstract: A data format is provided for song accompaniment which includes pointers indicating a starting position of accompaniment data and lyrics data in every section of a song is provided. The data format includes a lyrics data portion having lyrics data; an accompaniment data portion having accompaniment data corresponding to the lyrics data of the lyrics data portion; and a header portion having a plurality of pointer pairs, each pointer pair being composed of one pointer indicating the front position of each section in the lyrics data of the lyrics data portion and the other pointer indicating the front position of accompaniment data corresponding to the front position of each section. The data format has a header portion including pointers indicating the starting position of a section, thereby allowing the synchronization of the lyrics and accompaniment data of every section during the reproduction of a data format.

Abstract: Spin trapping compositions in general have now been discovered to be effective in treating a variety of disorders, including disorders such as those arising from ischemia, infection, inflammation, exposure to radiation or cytotoxic compounds, not just of the central and peripheral nervous systems but of peripheral organ disease having a wide variety of etiologies. In the preferred embodiment, the compositions for treating tissue damage from ischemia (DMPO include 5,5-dimethyl pyrroline N-oxide (DMPO), and spin-trapping derivatives thereof, in a suitable pharmaceutical carrier for intravenous, oral, topical, or nasal/pulmonary administration. Many different disorders can be treated using these compounds, including diseases or disorders of the central and peripheral nervous systems, and disorders arising from ischemia, infection, inflammation, oxidation from exposure to radiation or cytotoxic compounds, as well as due to naturally occurring processes such as aging.