Abstract: A method for strengthening a weak stratum using a solidified composition is provided. The method comprises the steps of: forming a horizontal drainage layer on the weak stratum; building-up mound structures on the drainage layer-formed weak stratum to the critical mound height; vertically forming holes in weak stratum; and mixing a first mixture comprising 25-35 parts by weight of cement, and on the basis of 100 parts by weight of the cement, 0.2-0.4 parts by weight of high fluid adjustment and 0.1-0.2 parts by weight of gel retardant, with a second mixture composed of 65-75 parts by weight of dried sand having a particle size of 0.074-5.0 mm, and on the basis of 100 parts by weight of the cement, 0.3-0.8 parts by weight of aluminum powder, then introducing the first and second mixture into the holes.

Abstract: There is disclosed a backlight assembly for maximizing a light incidence efficiency by changing a construction of a light guide plate and a liquid crystal display device having the same. A light incidence surface of the light guide plate receiving a light from a lamp is inclined to make an obtuse angle with a light-emitting surface through which the light is transferred to the display unit. An open surface of a lamp cover that is disposed to face towards the light incidence surface is formed to have the same inclined angle as the light incidence surface of the light guide plate. In addition, a light reflecting plate and an optical sheet are respectively disposed on the top and bottom surfaces of the light guide plate, on which light absorbing layers, for absorbing light that leaks from the light guide plate, are formed at both ends thereof.

Abstract: A concrete retaining wall is disclosed on which flora can be cultured and a method for constructing the same. The retaining wall has a steel skeleton constructed with basal H-beams, aerial H-beams, L-beams, structural steel tubes and steel plates. The basal H-beams and the aerial beams are arranged in a direction parallel with the earth's surface and at a significant angle to the earth's surface, respectively, at such space intervals and dimensions that the retaining wall structure has sufficient bending resistance to overcome active earth pressures. The L-beams, the structural steel tubes and the steel plates are provided as reinforcements between the H-beams. Watertight concrete is applied to the basal H-beams. Wire mesh is attached to the aerial H-beams, the L-beams, the structural tubes and steel plates. The wire-mesh-mounted structure is coated with water-permeable concrete to form a stepped or embossed external surface.

Abstract: Disclosed is a high-temperature superconductor low-pass filter for removing broadband harmonics in a wireless communication system. The high-temperature superconductor low-pass filter includes a coupled line section and a transmission line section, in which the coupled line section is connected in parallel with the transmission line section. The coupled line section has two microstrip open-stub type parallel stripe lines stacked on a high-temperature superconductor, and the transmission line section has one stripe line. Since the high-temperature superconductor low-pass filter has attenuation poles at a stopband, it has stopband characteristics to 7-8 times wider than a cutoff frequency. The high-temperature superconductor low-pass filter can easily remove sub-harmonics which are inevitably occurred in the wireless communication system.

Abstract: A method for manufacturing a semiconductor device capable of performing a writing operation with a small amount of current by forming a thin oxide film on the surface a word line being used as a write line so as to reduce the distance between an MTJ cell and the word line includes the steps of forming a word line on a semiconductor substrate, wherein the word line is used as a write line, forming a planarized layer insulating film exposing the surface of the word line, forming a dielectric film on the surface of the word line, forming a seed layer connected to the word line through the dielectric film and configuring a cell on the top of the seed layer and in an upper portion of the word line.

Abstract: Disclosed are novel &agr;-aryl-N-alkylnitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compositions are useful as therapeutics for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals and as analytical reagents for detecting free radicals.

Abstract: A memory device and a fabrication method therefor. In order to improve an operation property of a magnetic RAM (abbreviated as ‘MRAM’) having a higher speed than an SRAM, integration as high as a DRAM, and a property of a nonvolatile memory such as a flash memory, an oxide film is thinly formed on a second word line which is a write line, and an MTJ cell is formed according to a succeeding process. The MRAM is formed by reducing a distance between the write line and the MTJ cell. It is thus possible to perform a write operation with a small current.

Abstract: Disclosed are novel aryl-N-alkylnitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compositions are useful as therapeutics for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals and as analytical reagents for detecting free radicals.

Abstract: A magnetic random access memory (MRAM) is disclosed. In order to achieve high integration, the MRAM includes a word line formed in an active region of a semiconductor substrate, and used as a read line and a write line; a ground line and a lower read layer positioned on opposite sides of the active region of the semiconductor substrate; a seed layer contacting the lower read layer, and being overlapped with the upper portion of the word line; an MTJ cell contacting the upper portion of the seed layer at the upper portion of the word line; and a bit line contacting the MTJ cell, and crossing the word line in a vertical direction.

Abstract: A method for fabricating a high temperature superconducting step-edge Josephson junction includes the steps of: (i) preparing a step-edge on an SrTiO3 (STO) substrate; (ii) depositing a YBa2Cu3O7−x (YBCO) thin film on the step-edge substrate obtained; and (iii) forming a micro-bridge pattern on the, deposited metal thin film by photolithography and ion milling and then performing a heat treatment. This makes it possible to fabricate a step edge having a linear portion inclined at a large angle with good reproducibility during the ion-milling step. Furthermore, the two-stepped process of post heat treatment is carried out after the metal electrode of the junction is formed so that the high temperature superconducting step-edge junction can have its own characteristics enhanced.

Abstract: A near-field optical heterodyne measurement system for measuring characteristic of high-frequency and high-speed devices includes a combining unit for combining two optical beams to produce a submicron-size optical beam, wherein the two optical beams have different frequency from each other, a near-field fiber-optic probe for injecting the submicron-size optical beam into a sample device to be measured, a position controlling unit for controlling a position of the near-field fiber-optic probe, and a measuring unit for receiving a millimeter wave exited from the sample device to measure characteristics of the sample device.

Abstract: A method for manufacturing a semiconductor device capable of performing a writing operation with a small amount of current by forming a thin oxide film on the surface a word line being used as a write line so as to reduce the distance between an MTJ cell and the word line includes the steps of forming a word line on a semiconductor substrate, wherein the word line is used as a write line, forming a planarized layer insulating film exposing the surface of the word line, forming a dielectric film on the surface of the word line, forming a seed layer connected to the word line through the dielectric film and configuring a cell on the top of the seed layer and in an upper portion of the word line.

Abstract: A magnetic random access memory (RAM) is implemented by a gate electrode formed on an active region in a semiconductor substrate and being a word line used as a write line, a ground line formed in one side of the word line, a lower lead layer formed in the other side of the word line, a seed layer connected to the lower lead layer and overlapped with the word line, a magnetic tunnel junction (MTJ) cell made on the seed layer and located in an upper portion of the word line and an upper lead layer being a bit line formed connected to the MTJ cell.

Abstract: The invention relates generally to high-temperature superconducting Josephson junction devices necessary in implementing an advanced a single flux quantum circuit for a digital electronic device using superconductors. More particularly, the invention relates to ramp-edge Josephson junction devices and methods for fabricating the same, using copper-series oxide super-conducting thin films. According to the present invention, the ramp-edge Josephson junction device comprises a substrate, a first electrode layer having a ramp-edge and a first insulating layer formed on the substrate sequentially, a transformation layer formed at the ramp-edge of the first electrode layer by illumination of excimer laser and by annealing process, and a second electrode layer and a second electrode layer and a second insulating layer formed on the first electrode layer including the transformation layer and the first insulating layer sequentially.

Abstract: A semiconductor device having a recessed silicon on insulator (SOI) structure includes an SOI substrate having a cell region, a peripheral region and a field region, the SOI substrate having a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer, a trench in the field region of the second semiconductor layer, a device isolation film within the trench, a peripheral region recessed in the second semiconductor layer, and an active semiconductor device on the cell region and the peripheral region of the second semiconductor layer.

Abstract: Disclosed are furan nitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compounds are useful as analytical reagents for detecting free radicals and as therapeutics for treating a wide variety of medical dysfunctions and diseases.

Abstract: An improved borderless contact structure and method of making the structure including a substrate with side walls formed on the side of the shallow trench. An insulator is formed over the side walls and in the remainder of the trench such that the insulator extends above an upper surface of the substrate. The side walls are formed of a first etch selection type and the insulator is formed of a second etch selection type.

Abstract: An optical device for use in generating a high frequency optical signal includes a light source for generating a pumping light beam, a first oscillator for generating a first light beam with a plurality of modes by using the pumping light beam, an optical element for selecting a first mode from the modes, a second oscillator for generating a second light beam of a second mode by using the selected first mode; and an optical coupler for coupling the selected first mode to the second mode to induce a beat phenomenon therebetween. In the optical device, the first oscillator generates the high frequency optical signal by the beat phenomenon.

Abstract: Disclosed are methods for preventing the onset of autoimmune or inflammatory diseases in mammals using a pharmaceutical composition containing a pharmaceutically acceptable carrier and an effective amount of a thioether furan nitrone compound.

Abstract: Disclosed are a solidified composition to strengthen weak stratum and a construction method using the same. The method comprises the steps of: forming a horizontal drainage layer on the weak stratum; building-up mound structures on the drainage layer-formed weak stratum to the critical mound height; vertically forming holes in said weak stratum; and mixing a first mixture comprising 20-30 parts by weight of cement, and on the basis of 100 parts by weight of the cement, 0.2-0.4 parts by weight of high fluide adjustment-admixture and 0.1-0.2 parts by weight of gel retardant, with a second mixture composed of 70-80 parts by weight of dried sand having a particle size of 0.074-5.0 mm, and on the basis of 100 parts by weight of the cement, 0.3-0.8 parts by weight of aluminum powder, then introducing the final mixture into the holes. By using the method, the weak stratum is rapidly strengthened by friction pile effect of the hardened porous sand pile.