Abstract: A fiber-optic polarizer made by a process comprised of providing a substrate, coupling or embedding an optical single mode fiber to the substrate, making a narrow trench across the fiber at an angle, thereby bifurcating the fiber core into a first fiber core end and a second fiber core end, inserting and securing a thin polarizing material of a monolithic, non-laminated structure into the narrow trench, such that a light spot size emitted from a first fiber core is completely encompassed by the polarizing material, and the light spot size emerging from the polarizing material is substantially collected within the mode field diameter of a second fiber core. The narrow trench having a width of about 30-50 &mgr;m, and the polarizing material having a thickness of about 15-50 &mgr;m. The polarizing material having a monolithic composition.

Abstract: A fiber-optic polarizer made by a process comprised of providing a substrate, coupling or embedding an optical single mode fiber to the substrate, making a narrow trench across the fiber at an angle, thereby bifurcating the fiber core into a first fiber core end and a second fiber core end, inserting and securing a thin polarizing material of a monolithic, non-laminated structure into the narrow trench, such that a light spot size emitted from a first fiber core is completely encompassed by the polarizing material, and the light spot size emerging from the polarizing material is substantially collected within the mode field diameter of a second fiber core. The narrow trench having a width of about 30-50 &mgr;m, and the polarizing material having a thickness of about 15-50 &mgr;m. The polarizing material having a monolithic composition.

Abstract: A tilt angle sensor is disclosed that is capable of detecting whether a tilt angle of a reference plane exceeds a predetermined value by means of only one threshold value. Although only one threshold value is used, the tilt angle can be measured with respect to either a clockwise or a counterclockwise direction from the untilted state. A pair of differential electrodes electrically independent of each other are formed in a shape symmetric with respect to upper and lower sections of a printed circuit board. A common electrode plate is mounted opposed to the pair of differential electrodes with a predetermined gap therebetween. The pair of differential electrodes and the common electrode is stored in a closed space formed by the printed circuit board and an oil case. A dielectric liquid is filled into the closed space in such a way that the level of the liquid varies according to the tilt of the reference plane.

Abstract: A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

Abstract: There are provided: (i) an acid resistant catalyst sheet comprising: a catalyst component-containing titania fiber; a glass fiber; and at least one resin selected from the group consisting of an epoxy resin, a phenolic resin, a melamine resin, a furan resin, a polyimide resin, a silicone resin, a fluororesin, a polyphenylene sulfide resin and a polyether ether ketone resin; and (ii) a process for producing an acid resistant catalyst sheet, which comprises the step of making paper from a mixture containing: a catalyst component-containing titania fiber; a glass fiber; and at least one resin selected from the group consisting of an epoxy resin, a phenolic resin, a melamine resin, a furan resin, a polyimide resin, a silicone resin, a fluororesin, a polyphenylene sulfide resin and a polyether ether ketone resin.

Abstract: A carbonaceous material for a negative electrode in which a true density of 1.65 g/cc to 1.85 g/cc, a content of hydrogen with respect to carbon is 0.01 to 0.15 in terms of an atomic ratio, intervals between (002) planes are 3.45 Å to 3.55 Å, the thickness of crystalline is 12.0 Å to 20.0 Å, and assuming that an area enclosed by a base line which is a common tangent line connecting minimal values on the two sides of a (002) diffraction line in a scattered X-ray curve and the (002) diffraction line is S1 and that an area enclosed by a scattered X-ray curve having a diffraction angle 2&thgr; of 4° or more and positioned in lower angle portions as compared with the (002) diffraction line and the base line is S0, an area ratio S0/S1 of S0 with respect to S1 is 0.4 to 2.0. The carbonaceous material for a negative electrode is obtained by oxidizing a carbonaceous raw material containing &ggr; resin in a quantity of 0.

Abstract: A ferroelectric memory device comprises a word line, first and second bit lines cross to the word line, a memory cell including a first transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the first bit line, a second transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the second bit line, and a ferroelectric cell capacitor coupled to the other of source and drain of the first and second transistor, and first and second capacitors each coupled via a switching transistor to a respective one of the first and second bit lines, wherein first and second voltages complementary to each other are applied to the first and second bit lines, via the first and second capacitors, respectively.

Abstract: A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

Abstract: There are provided (i) a heat resistant catalyst sheet having an aramid fiber and a catalyst component-containing titania fiber; and (ii) a process for producing a heat resistant catalyst sheet, which has the step of making paper from a mixture of an aramid fiber and a catalyst component-containing titania fiber.

Abstract: A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

Abstract: A semiconductor integrated circuit includes a first address transition detecting circuit which detects transitions of a row address signal and a column address signal of a memory cell array, a second address transition detecting circuit which detects only the transition of the column address signal, a control circuit which generates an internal circuit control signal with a desired period of time required for row access based on only a first detection signal and generates a column-related circuit control signal with a desired period of time required for column access to the memory cell array based on only a second detection signal, and a mode discriminator which determines one of the row access and the column access to be made and performs the access control operation based on the determination result.

Abstract: A tilt angle sensor is disclosed that is capable of detecting whether a tilt angle of a reference plane exceeds a predetermined value by means of only one threshold value. Although only one threshold value is used, the tilt angle can be measured with respect to either a clockwise or a counterclockwise direction from the untilted state. A pair of differential electrodes electrically independent of each other are formed in a shape symmetric with respect to upper and lower sections of a printed circuit board. A common electrode plate is mounted opposed to the pair of differential electrodes with a predetermined gap therebetween. The pair of differential electrodes and the common electrode is stored in a closed space formed by the printed circuit board and an oil case. A dielectric liquid is filled into the closed space in such a way that the level of the liquid varies according to the tilt of the reference plane.

Abstract: The present invention provides a porous titania, which has an anatase-form crystalline structure, an anatase-form crystallite diameter of 3 nm to 10 nm, a degree of anatase crystallinity of 60% or more, a BET specific surface area of 10 m2/g or more, a total pore volume of 0.05 cm3/g or more, and a volume for pores having a pore radius of 1 nm or more of 0.02 cm3/g or more, and the porous titania and the catalyst comprising the porous titania of the present invention exhibit an excellent catalytic activity for removal of nitrogen oxides, oxidation of organic substances, decomposition of dioxine compounds, as well as decomposition and removal of organic solvents, agricultural chemical and surfactant.

Abstract: The present invention provide a boehmite in which (i) a crystallite diameter in the direction perpendicular to the plane (020) is about 65 angstrom or longer and (ii) a ratio of a crystallite diameter in the direction perpendicular to the plane (002) to a crystallite diameter in the direction perpendicular to the plane (200) is about 1.8 or more. By using the boehmite as a non-magnetic pigment, a base coat layer for magnetic recording medium having an excellent surface smoothness can be obtained.

Abstract: An arrayed optical device includes a first optical fiber collimator array, a second optical fiber collimator array and an optical chip. The first optical fiber collimator array includes a first optical fiber array block and a first microlens array substrate. The second optical fiber collimator array includes a second optical fiber array block and a second microlens array substrate. The optical chip is coupled between the first microlens array substrate and the second microlens array substrate.

Abstract: An optical fiber collimator array includes an optical fiber array block and a microlens array substrate. The optical fiber array block includes an angled surface and is configured to receive and retain a plurality of individual optical fibers, which carry optical signals. The microlens array substrate includes a plurality of microlenses integrated along a microlens surface and a sloped surface opposite the microlens surface. The microlens surface is coupled to the angled surface such that the optical signals from the individual optical fibers are each collimated by a different one of the integrated microlenses.

Abstract: A continuous fiber of titania are made having an average diameter per a monofilament of from 5 to 50 &mgr;m, which has a BET specific surface area of 10 m2/g or more, a pore volume of 0.05 cc/g or more, a volume of pores having a pore diameter of not less than 10 angstroms being 0.02 cc/g or more and an average tensile strength per a monofilament of 0.1 GPa or more, or which has an average tensile strength per a monofilament of 0.5 GPa or more.

Abstract: An alignment procedure aligns the components of an arrayed optical fiber collimator and reduces losses associated with the collimator. Initially, an optical fiber array block including a plurality of individual optical fibers is received and retained. Next, a microlens array substrate including a plurality of microlenses integrated along a microlens surface and a substrate surface opposite the microlens surface is received and retained. Then, at least a portion of a first light receiver that is positioned to receive a light beam from at least one of the integrated microlenses is received and retained. Next, at least one light beam is provided from the light source to at least one of the plurality of individual optical fibers. Then, the position of at least one of the microlens array substrate and the optical fiber array block is adjusted in relation to each other to maximize the optical power of the light beam received by the first light receiver.

Abstract: The present invention provides a porous titania, which has an anatase-form crystalline structure, an anatase-form crystallite diameter of 3 nm to 10 nm, a degree of anatase crystallinity of 60% or more, a BET specific surface area of 10 m2/g or more, a total pore volume of 0.05 cm3/g or more, and a volume for pores having a pore radius of 1 nm or more of 0.02 cm3/g or more, and the porous titania and the catalyst comprising the porous titania of the present invention exhibit an excellent catalytic activity for removal of nitrogen oxides, oxidation of organic substances, decomposition of dioxine compounds, as well as decomposition and removal of organic solvents, agricultural chemical and surfactant.

Abstract: A ferroelectric memory device comprises a word line, first and second bit lines cross to the word line, a memory cell including a first transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the first bit line, a second transistor a gate of which is coupled to the word line and one of source and drain of which is coupled to the second bit line, and a ferroelectric cell capacitor coupled to the other of source and drain of the first and second transistor, and first and second capacitors each coupled via a switching transistor to a respective one of the first and second bit lines, wherein first and second voltages complementary to each other are applied to the first and second bit lines, via the first and second capacitors, respectively.