Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.

Abstract: A semiconductor integrated circuit of the invention comprises an internal power supply voltage down circuit which steps down a first external power supply voltage to produce an internal power supply voltage, an input circuit to which the internal power supply voltage is supplied, an internal circuit to which the first external power supply voltage is supplied and which is connected to the input circuit, and an output circuit to which a second external power supply voltage differing from the first external power supply voltage is supplied and which is connected to the internal circuit. The second external power supply voltage is separated from the first external power supply voltage and is lower than the first external power supply voltage.

Abstract: A method for producing an ?-alumina particulate is described. The method for producing an ?-alumina particulate comprises steps of (Ia) and (Ib), or a step of (II): (Ia) removing water from a mixture containing water, a seed crystal and a hydrolysate obtained by hydrolysis of an aluminum compound under conditions of a pH of 5 or less and a temperature of 60° C. or less, (Ib) calcining the resulted powder, (II) calcining a mixed powder containing 75-1 wt % of an ?-alumina precursor (in terms of Al2O3) and 25-99 wt % of a seed crystal (in terms of oxide of metal component).

Abstract: A chain type ferroelectric random access memory has a memory cell unit including ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier. A value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

Abstract: A battery capable of obtaining a high energy density and obtaining superior cycle characteristics is provided. The thickness of a cathode active material layer is from 100 ?m to 130 ?m. The thickness of an anode active material layer is from 85 ?m to 120 ?m, and the volume density of the anode active material layer is from 1.7 g/cm3 to 1.85 g/cm3. An electrolytic solution contains 4-fluoro-1,3-dioxolane-2-one. Thereby, even when the thicknesses of the cathode active material layer and the anode active material layer are increased, the diffusion and acceptance of lithium in an anode are improved, and superior cycle characteristics can be obtained.

Abstract: A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: A semiconductor integrated circuit device includes a memory cell array, an address transition detecting circuit which detects transition of a column address signal, the column address signal being used to specify a column address of the memory cell array, a control circuit having a timeout circuit, the control circuit which generates an internal circuit control signal of desired length used to control column access to the memory cell array based on a result of detection by the address transition detecting circuit, and a column selection line whose selection time is controlled by the control circuit, wherein the column address signal used for selection of the column selection line is latched in a period of time in which the column selection line is selected at a write operation time.

Abstract: The present invention provides a fine ?-alumina particle having a degree of ?-transformation of not less than 95%, a BET specific surface area of not less than 10 m2/g, a degree of necking of not more than 30%, and a total content of Si, Fe, Cu, Na and Mg of not more than 500 ppm.

Abstract: In conventional optical isolators, an optical signal is dispersed by polarization or the characteristics are varied by heat generation in a garnet crystal. According to the invention, the crystal optical axis (3c) of rutile crystal (3) is oriented so that the separation directions of the ordinary ray (O) and the extraordinary ray (E) are perpendicular to the plane including the optical axes of optical fibers (10, 11). Furthermore, the focusing central optical axis (6c) of a focusing rod lens (6) is arranged parallel with optical axes of the optical fibers (10, 11) and at a substantially equal distance from the four rays, i.e. the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (10) and the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (11). An air gap (7) of about 200 [?m] is provided, as a heat insulating means, between the focusing rod lens (6) and a magnetized garnet crystal (8).

Abstract: An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2).

Abstract: A fuel injection valve control to correctingly increase the fuel amount appropriately for realizing a favorable acceleration performance at the time of accelerating after a throttle full closure period is finished.

Abstract: A semiconductor device includes an internal power supply, at least one semiconductor circuit block, a delay circuit, and a detecting circuit. The internal power supply outputs an initialization completion signal when initialized. The semiconductor circuit block operates on the basis of a voltage generated by the internal power supply. The delay circuit delays the initialization completion signal. The detecting circuit commands the semiconductor circuit block to start operations in response to the initialization completion signal delayed by the delay circuit and an externally input first input signal.

Abstract: The present invention provides a process for producing fine ?-alumina particles, which comprises sintering a mixture of ?-alumina precursor particles and seed crystal particles, wherein a center particle diameter of the seed crystal particles is 40 nm or less, and a ratio of the number of coarse particles having a particle diameter greater than 100 nm to the number of the total particles is 1% or less.

Abstract: A chain type ferroelectric random access memory has a memory cell unit including ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier. A value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

Abstract: A method for producing ?-alumina powder is described. The method comprises the steps of removing water from a compound containing the following (1), (2), (3) and (4), and calcining the results: (1) ?-alumina precursor, (2) seed crystal, (3) water, (4) nitrate ion in an amount of from 2.8 to 3.3 mol per mol of aluminum (Al) contained in the ?-alumina precursor and the seed crystal.

Abstract: A chain type ferroelectric random access memory has a memory cell unit including ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier. A value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

Abstract: An anode and a battery capable of realizing a high capacity and improving charge and discharge cycle characteristics, and manufacturing methods thereof are provided. An anode active material layer (12) contains a particulate anode active material (12A) including a simple substance or a compound of an element capable of forming an alloy with Li, a particulate binder (12B) including a copolymer of vinylidene fluoride or polyvinylidene fluoride, and a conductive agent (12C). The anode active material layer (12) is formed by using a dispersion medium having a swelling degree of 10% or less to the binder (12B), specifically pure water or the like. The particulate binder (12B) functions as a cushion to absorb expansion and shrinkage of the anode active material (12A) due to charge and discharge, and lowering of electron conductivity caused by generation of cracks or separation is prevented. Further, since the anode active material (12A) is not covered with the binder (12B), electrode reaction is well performed.

Abstract: An optical fiber collimator array includes an optical fiber array block and a microlens array substrate. The optical fiber array block includes an angled surface and is configured to receive and retain a plurality of individual optical fibers, which carry optical signals. The microlens array substrate includes a plurality of microlenses integrated along a microlens surface and a sloped surface opposite the microlens surface. The microlens surface is coupled to the angled surface such that the optical signals from the individual optical fibers are each collimated by a different one of the integrated microlenses.

Abstract: A method for producing an ?-alumina powder is provided. T method for producing an ?-alumina powder comprising steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern in the presence of pulverizing agent, (2) mixing the obtained seed crystal with an aluminum salt, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.

Abstract: A semiconductor integrated circuit device includes an address buffer which receives an address signal that indicates an address of a memory cell array, a latch circuit which latches the data, and an address transition detection circuit which detects transition of the address. During the access operation of the memory cell array, an address at the operation start time is latched by the latch circuit. After the end of the operation of the memory cell array, an address that is currently input to the address buffer is latched by the latch circuit. If the received address signal is data different from the latch data, a control signal that controls the cycle operation of the memory cell array for a predetermined period is generated on the basis of the detection result from the address transition detection circuit.