Abstract: A method for producing an ?-alumina powder is provided. The method for producing an ?-alumina powder comprises steps of (1) preparing a mixture of an aluminum hydrolysate, a seed crystal and water; (2) removing the water from the mixture; and (3) calcining the resultant, wherein the aluminum hydrolysate in the step (1) is produced by hydrolyzing an aqueous aluminum chloride solution under conditions of a pH of 5 or less and a temperature of 60° C. or less.

Abstract: A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film.

Abstract: This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2).

Abstract: A semiconductor integrated circuit device includes a memory cell array, an address transition detecting circuit which detects transition of a column address signal, the column address signal being used to specify a column address of the memory cell array, a control circuit having a timeout circuit, the control circuit which generates an internal circuit control signal of desired length used to control column access to the memory cell array based on a result of detection by the address transition detecting circuit, and a column selection line whose selection time is controlled by the control circuit, wherein the column address signal used for selection of the column selection line is latched in a period of time in which the column selection line is selected at a write operation time.

Abstract: An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith.

Abstract: The present invention provides a method for producing an ?-alumina powder. The method for producing an ?-alumina powder comprises steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern, (2) mixing the obtained seed crystal with an aluminum compound, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.

Abstract: The present invention provides a method for producing an ?-alumina particle. The method for producing an ?-alumina particle comprises steps of: (1) placing a powdery mixture containing an aluminum salt and a seed crystal under a circumstance at not less than pyrolysis temperature of the aluminum salt, and (2) calcining the resultant.

Abstract: The present invention provides a method of producing an ?-alumina particle. The method of producing an ?-alumina particle comprises steps of: (1) heating a mixture containing an amorphous alumina and a pyrolyzable salt at temperature of not less than the temperature at which the pyrolyzable salt is decomposed, and less than the temperature at which the amorphous alumina transforms to ?-alumina; and (2) calcining the resultant under a partial pressure of water vapor of about 600 Pa or less.

Abstract: An inorganic oxide powder is produced by a method which comprises a step of (i) introducing, into a dry-way pulverizer, an inorganic oxide in an amount of 100 parts by volume and air, nitrogen or a gas mixture thereof in an amount of from about 25,000 to about 160,000 parts by volume to pulverize the inorganic oxide by the dry-way pulverizer, or (ii) introducing, into a medium-stirring-type pulverizer, an inorganic oxide with a BET specific surface area of from about 1 to about 70 m2/g to pulverize the inorganic oxide by the medium-stirring-type pulverizer in a dry way at a specific energy consumption of from about 0.3 to about 1 kWh/kg. The inorganic oxide powder is capable of providing a ceramic with high density and high mechanical strength.

Abstract: A steering damper is provided coaxially with a steering shaft, and a handlebar load is provided by causing a variable valve to generate damping force, using rotation of the steering shaft. The damping force is variably controlled in response to vehicle speed. The damping force is fixed to a minimum value C1 for vehicle speeds equal to or below first reference speed V1, fixed to a maximum value C2 for vehicle speeds equal to or above second reference speed V2, and variably controlled in response to vehicle speed and acceleration in an intermediate speed range. Fine maneuverability of a vehicle body is achieved by reducing a load on a handlebar at low vehicle speeds, and a stable movement of the vehicle body is maintained at high vehicle speed by increasing the load on the handlebar and thereby suppressing deflection of the handlebar.

Abstract: A fuel injection valve control to correctingly increase the fuel amount appropriately for realizing a favorable acceleration performance at the time of accelerating after a throttle full closure period is finished.

Abstract: The present invention provides a polarizer-attached optical fiber ferrule, a polarizer-attached optical fiber connector, and a polarized-attached optical fiber connector adapter for coupling a linear polarizer with one or more optical fibers without employing a lens. The polarizer-attached optical fiber connector 2 is equipped with an optical fiber 10, a ferrule 5 fitted on the periphery of the optical fiber 10 and equipped with a slit 16 reaching the optical fiber 10, and a linear polarizer 18 inserted into the slit 16 so that it crosses the optical fiber 10.

Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.

Abstract: A ferroelectric memory has a memory cell array of memory cells having ferroelectric capacitors, which is divided into a plurality of blocks, a boost power circuit provided in each block of the memory cell array to generate a boost voltage required for operation of the memory, a boost power switch provided between a power line connected to an external power terminal and a power supply terminal of each boost power circuit, and remaining ON during normal operation of the memory, a voltage detector circuit for detecting a drop of voltage level of the power line, and a switch control circuit for turning off the boost power switches in the blocks of the memory cell array excluding the boost power switch in a currently selected block in response to the voltage detector circuit.

Abstract: A semiconductor integrated circuit device includes a memory, /CE transition detector, address transition detector, /WE transition detector and controller. The controller includes a timeout circuit. The timeout circuit generates an internal circuit control signal with preset width to control access to the memory based on detection results of the above transition detectors. The operation of the memory is controlled by the timeout circuit at the read time. The operation of the memory is controlled by the timeout circuit when transition of the end of a /WE signal is detected by the /WE transition detector before a timing specified by the timeout circuit at the write time. Further, the operation of the memory is controlled in response to the transition of the /WE signal when the transition of the end of the /WE signal is detected by the /WE transition detector after passage of the above timing.

Abstract: An ATD circuit for row access, an ATD circuit for column access, and a mode determination circuit which determines which of the row access mode and column access mode is being executed are arranged in a pseudo SRAM. A mode determination signal is automatically generated in the chip to control the internal circuits. Upon detecting column address transition after the start of the cycle and activation of the sense amplifier, the mode determination circuit determines that column access starts. Upon detecting transition of a row address or a predetermined mode address after consecutive transition of the column address, the mode determination circuit determines that the column access mode is ended.

Abstract: A sensor for converting a physical quantity into an electric signal and issuing the output is driven by a drive circuit which is driven by a drive signal issued from a 1-chip microcomputer. The 1-chip microcomputer judges fault of sensor function when the sensor output signal is out of a specified output range. Further, when stopping the operation of the drive circuit, if the sensor output signal does not coincide with a specific value, the 1-chip microcomputer also judges fault of sensor function. According to the invention, in the event of a trouble of sensor function allowing the sensor output signal to settle within an output range, such trouble can be detected.

Abstract: An ATD circuit for row access, an ATD circuit for column access, and a mode determination circuit which determines which of the row access mode and column access mode is being executed are arranged in a pseudo SRAM. A mode determination signal is automatically generated in the chip to control the internal circuits. Upon detecting column address transition after the start of the cycle and activation of the sense amplifier, the mode determination circuit determines that column access starts. Upon detecting transition of a row address or a predetermined mode address after consecutive transition of the column address, the mode determination circuit determines that the column access mode is ended.

Abstract: An arrayed optical device includes a first optical fiber collimator array, a second optical fiber collimator array and an optical chip. The first optical fiber collimator array includes a first optical fiber array block and a first microlens array substrate. The second optical fiber collimator array includes a second optical fiber array block and a second microlens array substrate. The optical chip is coupled between the first microlens array substrate and the second microlens array substrate.