Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract: Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.

Abstract: A solid-state imaging device according to the present invention includes: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to the column signal line; and a feedback line, provided for each of the columns, to feed back output signal of the inverting amplifier to pixels in a corresponding column, wherein the amplifying transistor includes a gate connected to the pixel electrode and outputs signal voltage corresponding to the pixel electrode to a column signal line via the selection transistor, and one of a source and a drain of the reset transistor is connected to the pixel electrode and the other is connected to a corresponding feedback line.

Abstract: A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

Abstract: A light-emitting module according to an embodiment includes a light-emitting element which emits light and a substrate on which the light-emitting element is mounted. Further, the light-emitting module according to the embodiment includes a lens, which is formed from a material containing an aliphatic hydrocarbon organic compound having a cyclic structure in the main backbone, and is disposed on the substrate so as to cover the light-emitting element, and in which on a portion irradiated with light emitted by the light-emitting element, the maximum illuminance of the light is 100,000 lx or more and 300,000 lx or less or the maximum energy per unit area of the light is 30,000 ?W/cm2 or more and 90,000 ?W/cm2 or less.

Abstract: An imaging apparatus disclosed herein includes: a solid-state imaging device in which pixels are arranged in a matrix; a mechanical shutter; and a signal processing unit, wherein the signal processing unit: resets charge stored in all the pixels by closing the mechanical shutter and applying a voltage V2 to a photoelectric conversion unit; starts first exposure by opening the mechanical shutter and applying a voltage V1 to the photoelectric conversion unit; finishes the first exposure by applying the voltage V2 to the photoelectric conversion unit with the mechanical shutter open; reads pixel signals to obtain a first still image; resets all the pixels; starts second exposure by applying the voltage V1 to the photoelectric conversion unit with the mechanical shutter open; finishes the second exposure by applying the voltage V2 to the photoelectric conversion unit with the mechanical shutter open; reads pixel signals to obtain a second still image.

Abstract: A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

Abstract: According to one embodiment, in a constricted part of a globe, one end is set to a minimum diameter, the other end is set to a maximum diameter, and a diameter thereof increases from the one end side to the other end side. The constricted part of the globe is concaved into the inside of an imaginary straight line connecting an outer edge of the one end and an outer edge of the other end when viewed in section. A light source part includes a semiconductor light-emitting element and is contained in the globe so that a light-emitting part is positioned between both the ends of the constricted part of the globe. A cap is positioned on one end side of the globe.

Abstract: An imaging device includes: a stack-type solid-state imaging device which includes pixels including: a photoelectric conversion film which performs photoelectric conversion on light to convert the light into signal charges; a pixel electrode on a first surface of the photoelectric conversion film, the first surface being at a side of the semiconductor substrate; a transparent electrode on a second surface of the photoelectric conversion film, the second surface being opposite to the first surface; and a pixel circuit unit configured to read the signal charges, and accumulate the read signal charges, and the imaging device further includes a control unit configured to control exposure time by selectively applying, to the transparent electrode, a voltage having a first voltage value at which the signal charges move to the pixel circuit unit and a voltage having a second value at which the signal charges move to the pixel circuit unit.

Abstract: Unit pixel cells each includes: a photoelectric conversion film; a transparent electrode; a pixel electrode; an amplification transistor; a reset transistor; and an element isolation STI and a leakage suppression region for electrically isolating the amplification transistor and the reset transistor, the first isolation region being in a silicon substrate, between the amplification transistor and the reset transistor, the reset transistor including: a gate electrode; and a drain region which is connected to the pixel electrode, and is in the silicon substrate, between the gate electrode and element isolation STI and the leakage suppression region, in which a depletion layer formed by a first PN junction between the drain region and its surrounding region and in contact with a surface of the silicon substrate is narrower than a depletion layer formed by a second PN junction between the drain region and its surrounding region and formed in the silicon substrate.

Abstract: In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.

Abstract: According to one embodiment, in a constricted part of a globe, one end is set to a minimum diameter, the other end is set to a maximum diameter, and a diameter thereof increases from the one end side to the other end side. The constricted part of the globe is concaved into the inside of an imaginary straight line connecting an outer edge of the one end and an outer edge of the other end when viewed in section. A light source part includes a semiconductor light-emitting element and is contained in the globe so that a light-emitting part is positioned between both the ends of the constricted part of the globe. A cap is positioned on one end side of the globe.

Abstract: According to one embodiment, a bulb-shaped lamp includes a light source unit, a plurality of substrates, a substrate holding member, and a globe. The respective substrates hold light source units. The substrate holding member has thermal conductivity and an insulating property and holds the respective substrates. The globe is thermally connected to the substrate holding member. The cap is positioned on one end side of the globe.

Abstract: An image-capturing apparatus including a solid-state imaging device including unit-cells arranged in a matrix, in which each of the unit-cells includes a photoelectric conversion unit including: a photoelectric conversion film formed above a semiconductor substrate; a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and the image-capturing apparatus further includes: a voltage applying unit which applies, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device; a level detecting unit which detects an output level of image-captured image data from the solid-state imaging device; and a controlling unit which varies the variable sensitivity voltage based on the output level detected b

Abstract: A lighting device according to an embodiment includes a light source module, a thermal radiation member, and a fixing member. The light source module is a module mounted with a light-emitting element such as an LED (Light Emitting Diode) on the inside and including the light-emitting element as a light source. In the thermal radiation member, the light source module is set. The thermal radiation member radiates heat generated from the light source module. A fixing member is screwed on a sidewall of the thermal radiation member in a state in which the fixing member surrounds the light source module and the thermal radiation member.

Abstract: According to an exemplary embodiment, a lighting apparatus includes a light source that includes a light emitting element, and a member which is irradiated with light emitted from the light source and which is formed of resin having absorptivity of 15% or less in a wavelength in which intensity is 10% of a peak intensity, at a wavelength side that is shorter than an intensity peak of a spectrum of blue light emitted from the light source.

Abstract: A lighting apparatus according to an exemplary embodiment includes a light source including a light emitting element, a reflection portion main body that is formed of an incombustible resin and is provided at an emission side of the light source, and a reflection layer that is formed of resin substantially not containing halogen or phosphorus and is provided on a surface of the reflection portion main body.

Abstract: The present invention provides a solid-state imaging device which is capable of high-speed and high-quality pixel mixture. The solid-state imaging device includes: a plurality of pixels; a row selecting circuit; a plurality of column signal lines each of which is provided to a corresponding one of columns of pixels, is connected to pixels of the corresponding column, and transfers the signals outputted from the connected pixels; a pixel current source which (i) is provided to a corresponding one of the column signal lines, (ii) is connected to the corresponding column signal line, and (iii) supplies to the connected column signal line a current when the signal is outputted from the selected pixel to the connected column signal line; and a control unit which changes the number of rows of pixels being simultaneously selected by the row selecting circuit, and values of the current supplied by the pixel current source.

Abstract: Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.

Abstract: According to an exemplary embodiment, a lighting apparatus includes a light source that includes a light emitting element, and a member which is irradiated by light emitted from the light source and which is formed of resin substantially not containing halogen or phosphorus.