Abstract: A frame rate control method is provided. A primary scenario and a non-primary scenario are identified according to two or more windows displayed on a screen. Each of the primary scenario and the non-primary scenario is performed by an individual application. A frame rate of the non-primary scenario is decreased when a performance index indicates that a first condition is present. The application corresponding to the non-primary scenario is disabled when the performance index indicates that a second condition is present after decreasing the frame rate of the non-primary scenario, so as to remove the window corresponding to the non-primary scenario from the screen.

Abstract: A die bonding tool having a tool head including a plurality of openings fluidly coupled to a vacuum source to selectively secure a semiconductor die onto the tool head via the application of a suction force. The plurality of openings have non-uniform cross-sectional areas, including one or more first openings having a first cross-sectional area and one or more second openings having a second cross-sectional area that is greater than the first cross-section area. A first minimum offset distance between each of the first openings and any peripheral edge of the tool head is less than a second minimum offset distance between each of the second openings and any peripheral edge of the tool head. The configuration of the openings in the tool head may improve bonding of the semiconductor die to a substrate by inhibiting air becoming trapped between the semiconductor die and the substrate during the bonding process.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A main board, a hot plug control signal generator, and a control signal generating method thereof are provided. The hot plug control signal generator includes a controller and a latch. The controller provides a control signal. The latch is operated based on an operation power to generate a hot plug control signal. The latch sets the hot plug control signal to a disabled first logic value, and latches the hot plug control signal at the first logic value.

Abstract: A copolyester is formed by copolymerizing a depolymerized polyester and succinic acid. The depolymerized polyester includes depolymerized polyethylene terephthalate (PET), and the depolymerized PET is formed by depolymerizing PET with ethylene glycol. The repeating unit of PET and the succinic acid have a molar ratio of 40:60 to 50:50. The repeating unit of PET and the ethylene glycol have a molar ratio of 100:100 to 100:500. The copolyester has a storage modulus of 1*104 Pa to 1*106 Pa at 80° C. The copolyester can be used in a hot melt adhesive.

Abstract: A semiconductor package includes a semiconductor component, a package body, a first RDL structure and an insulation layer. The package body surrounds the semiconductor component and has a first package surface. The first RDL structure is formed on the first package surface of the package body. The insulation layer is formed on the first RDL structure and includes an insulation body, a plurality of recessed portions and a plurality of voids, wherein the insulation body has a first insulation surface, the recessed portions are recessed with respect to the first insulation surface and form a pattern, and the voids are embedded in the insulation body.

Abstract: A backlight control device for use in an electronic device includes a motion detecting unit, a sound matching unit and a controller. The motion detecting unit is configured to detect motion of a lid section of the electronic device to generate motion data. The sound matching unit is configured to match a soundprint derived from a sound sample that is captured by a sound capture unit, to one or more sound patterns stored within in a sound pattern database to generate a lid state indication signal if the motion data indicates the motion of the lid section corresponds to a predetermined state. The controller is configured to control a backlight module of a display device of the electronic device according to the lid state indication signal.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the interconnect-level dielectric material layers, at least one dielectric capping layer located on a second side of the interconnect-level dielectric material layers, a bonding-level dielectric layer located on the at least one dielectric capping layer, metallic pad structures including pad via portions embedded in the at least one dielectric capping layer and pad plate portions embedded in the bonding-level dielectric layer, and an edge seal ring structure vertically extending from a first horizontal plane including bonding surfaces of the package-side bump structures to a second horizontal plane including distal planar surfaces of the metallic pad structures.

Abstract: Composite dielectric structures for semiconductor die assemblies, and associated systems and methods are disclosed. In some embodiments, the composite dielectric structure includes a flexible dielectric layer configured to conform to irregularities (e.g., particles, defects) at a bonding interface of directly bonded semiconductor dies (or wafers). The flexible dielectric layer may include a polymer material configured to deform in response to localized pressure generated by the irregularities during bonding process steps. The composite dielectric structure includes additional dielectric layers sandwiching the flexible dielectric layer such that the composite dielectric structure can provide robust bonding strength to other dielectric layers through the additional dielectric layers. In some embodiments, a chemical vapor deposition process may be used to form the composite dielectric structure utilizing siloxane derivatives as a precursor.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.

Abstract: A white photosensitive resin composition, a white spacer, a light conversion layer, and a light-emitting device are provided. The white photosensitive resin composition includes a polymerizable compound (A), an alkali-soluble resin (B), a photopolymerization initiator (C), a solvent (D), and a white pigment (E). The polymerizable compound (A) includes an ethylenically-unsaturated monomer (A-1) represented by formula (I-1) and a thiol compound (A-2) having two or more thiol groups in one molecule, wherein based on 100 mass % of the polymerizable compound (A), a total content of the ethylenically-unsaturated monomer (A-1) and the thiol compound (A-2) is 10 mass % to 98 mass %.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: The photosensitive resin composition includes an alkali-soluble resin (A), an ethylenically-unsaturated monomer (B), a photopolymerization initiator (C), a solvent (D), and a pigment (E). The alkali- soluble resin (A) includes an alkali-soluble resin (A-1), wherein the alkali-soluble resin (A-1) includes a structural unit represented by formula (I-1) and a structural unit represented by formula (I-2). The photopolymerization initiator (C) includes an acylphosphine oxide compound represented by formula (III-1).

Abstract: A slurry blending tool may include a blending tank to receive and blend one or more materials into a slurry, and at least one inlet pipe connected to the blending tank and to provide the one or more materials to the blending tank. The at least one inlet pipe may vertically enter the blending tank and may not contact the blending tank. The slurry blending tool may include a blending pump partially provided within the blending tank and to blend the one or more materials into the slurry. The slurry blending tool may include an outlet pipe connected to the blending pump and to remove the slurry from the blending tank.

Abstract: A photosensitive resin composition, a cured film and a microlens array are provided. The photosensitive resin composition includes resin (A), an ethylenically unsaturated monomer (B) and a photopolymerization initiator (C). The resin (A) includes an alkali-soluble resin (A-1). The alkali-soluble resin (A-1) includes a structural unit represented by following Formula (A1), a structural unit represented by following Formula (A2) or a combination thereof. The ethylenically unsaturated monomer (B) includes a compound represented by following Formula (B1). In Formula (A1), Formula (A2) and Formula (B1), the definition of R1 to R6, X1, Y1, Y2, m, n and * are the same as defined in the detailed description.

Abstract: A photosensitive resin composition, a cured product and a manufacturing method thereof, a light conversion layer and a light emitting device are provided. The photosensitive resin composition includes a resin (A), an ethylenically unsaturated monomer (B), a photopolymerization initiator (C), a pigment (D) and a solvent (E). The resin (A) includes an alkali-soluble resin (A-1), other resin (A-2) or the combination thereof. The alkali-soluble resin (A-1) includes a structural unit represented by the following formula (A1). The photopolymerization initiator (C) includes a compound represented by the following formula (C1). In formula (A1) and formula (C1), the definition of each substituent is the same as that in the detailed description.

Abstract: A slurry blending tool may include a blending tank to receive and blend one or more materials into a slurry, and at least one inlet pipe connected to the blending tank and to provide the one or more materials to the blending tank. The at least one inlet pipe may vertically enter the blending tank and may not contact the blending tank. The slurry blending tool may include a blending pump partially provided within the blending tank and to blend the one or more materials into the slurry. The slurry blending tool may include an outlet pipe connected to the blending pump and to remove the slurry from the blending tank.

Abstract: Composite dielectric structures for semiconductor die assemblies, and associated systems and methods are disclosed. In some embodiments, the composite dielectric structure includes a flexible dielectric layer configured to conform to irregularities (e.g., particles, defects) at a bonding interface of directly bonded semiconductor dies (or wafers). The flexible dielectric layer may include a polymer material configured to deform in response to localized pressure generated by the irregularities during bonding process steps. The composite dielectric structure includes additional dielectric layers sandwiching the flexible dielectric layer such that the composite dielectric structure can provide robust bonding strength to other dielectric layers through the additional dielectric layers. In some embodiments, a chemical vapor deposition process may be used to form the composite dielectric structure utilizing siloxane derivatives as a precursor.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.