Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, a heat dissipation element and conductive balls. The insulating encapsulant is encapsulating the semiconductor die, and has a first surface and a second surface opposite to the first surface. The first redistribution layer is located on the first surface of the insulating encapsulant and includes at least one feed line and one ground plate. The second redistribution layer is located on the second surface of the insulating encapsulant and electrically connected to the semiconductor die and the first redistribution layer. The heat dissipation element is disposed on the first redistribution layer and includes a conductive base and antenna patterns, wherein the antenna patterns is electrically connected to the feed line and is electrically coupled to the ground plate of the first redistribution layer.

Abstract: A method of forming a semiconductor package includes the following steps. A redistribution layer structure is formed over a first die and a dummy die, wherein the redistribution layer structure is directly electrically connected to the first die. An insulating layer is formed, wherein the insulating layer is disposed opposite to the redistribution layer structure with respect to the first die. At least one thermal through via is formed in the insulating layer.

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

Abstract: A semiconductor package includes a substrate, a semiconductor device, and a ring structure. The semiconductor device disposed on the substrate. The ring structure disposed on the substrate and surrounds the semiconductor device. The ring structure includes a first portion and a second portion. The first portion bonded to the substrate. The second portion connects to the first portion. A cavity is between the second portion and the substrate.

Abstract: The disclosed write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

Abstract: Provided are methods for learning to identify safety-critical scenarios for autonomous vehicles. First state information representing a first state of a driving scenario is received. The information includes a state of a vehicle and a state of an agent in the vehicle's environment. The first state information is processed with a neural network to determine at least one action to be performed by the agent, including a perception degradation action causing misperception of the agent by a perception system of the vehicle. Second state information representing a second state of the driving scenario is received after performance of the at least one action. A reward for the action is determined. First and second distances between the vehicle and the agent are determined and compared to determine the reward for the at least one action. At least one weight of the neural network is adjusted based on the reward.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: A package structure includes an insulating encapsulation, a semiconductor die, and a filter structure. The semiconductor die is encapsulated in the insulating encapsulation. The filter structure is electrically coupled to the semiconductor die, wherein the filter structure includes a patterned metallization layer with a pattern having a double-spiral having aligned centroids thereof.

Abstract: A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

Abstract: A method, system, and computer program product for segmenting and processing documents for optical character recognition is provided. The method includes receiving a document and detecting different types of text data. The document is divided into a plurality of text regions associated with the different types of said text data. Optical noise is removed from each text region and differing optical character recognition software code is selected for application to each text region. The differing optical character recognition software code is executed with respect to each text region resulting in extractable computer readable text located within each said text region.

Abstract: Among other things, techniques are described for obtaining a range image related to a depth sensor of a vehicle operating in an environment. A first data point is identified in the range image with an intensity at or below a first intensity threshold. A first number of data points are determined in the range image that have an intensity at or above a second intensity threshold in a first region of the range image. Then, it is determined whether the first number of data points is at or above a region number threshold. The first data point is removed from the range image if the first number of data points is at or above the region number threshold. Operation of the vehicle is then facilitated in the environment based at least in part on the range image. Other embodiments may be described or claimed.

Abstract: A memory macro system may be provided. The memory macro system may comprise a first segment, a second segment, a first WL, and a second WL. The first segment may comprise a first plurality of memory cells. The second segment may comprise a second plurality of memory cells. The first segment may be positioned over the second segment. The first WL may correspond to the first segment and the second WL may correspond to the second segment. The first WL and the second WL may be configured to be activated in one cycle.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip. The method includes forming a dielectric structure over a substrate. A first conductive wire is formed along the dielectric structure. The first conductive wire extends laterally along a first direction. A memory stack is formed on a top surface of the first conductive wire. A second conductive wire is formed over the memory stack. The second conductive wire extends laterally along a second direction orthogonal to the first direction. An upper conductive via is formed on the top surface of the first conductive wire. An upper surface of the upper conductive via is above the second conductive wire.

Abstract: A package structure includes an insulating encapsulation, a semiconductor die, and a filter structure. The semiconductor die is encapsulated in the insulating encapsulation. The filter structure is electrically coupled to the semiconductor die, wherein the filter structure includes a patterned metallization layer with a pattern having a double-spiral having aligned centroids thereof.

Abstract: A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

Abstract: A data merge method for a rewritable non-volatile memory module including a plurality of physical units is provided. The method includes: selecting at least one first physical unit and at least one second physical unit from the physical units; reading first mapping information from the rewritable non-volatile memory module, and the first mapping information includes mapping information of the first physical unit and mapping information of the second physical unit; copying valid data collected from the first physical unit and valid data collected from the second physical unit to at least one third physical unit of the physical units according to the first mapping information; and when a data volume of valid data copied from the second physical unit to the third physical unit reaches a data volume threshold, stopping collecting valid data from the second physical unit, and continuing collecting valid data from the first physical unit.

Abstract: A package structure and a method of forming the same are provided. A method includes forming first electrical connectors and second electrical connectors on a first side of an interposer wafer. An integrated circuit die is bonded to the first side of the interposer wafer using the first electrical connectors. A stiffener structure is attached to the first side of the interposer wafer adjacent the integrated circuit die. The stiffener structure covers the second electrical connectors in a plan view. The integrated circuit die and the stiffener structure are encapsulated with a first encapsulant. The interposer wafer and the stiffener structure are singulated to form a stacked structure.

Abstract: A data merge method for a rewritable non-volatile memory module including a plurality of physical units is provided. The method includes: selecting at least one first physical unit and at least one second physical unit from the physical units; reading first mapping information from the rewritable non-volatile memory module, and the first mapping information includes mapping information of the first physical unit and mapping information of the second physical unit; copying valid data collected from the first physical unit and valid data collected from the second physical unit to at least one third physical unit of the physical units according to the first mapping information; and when a data volume of valid data copied from the second physical unit to the third physical unit reaches a data volume threshold, stopping collecting valid data from the second physical unit, and continuing collecting valid data from the first physical unit.

Abstract: In an approach for a text block recognition in a document, a processor detects characters in the document using an object detection technique. A processor identifies positions of the detected characters in the document. A processor analyzes semantic connectivity among the detected characters based on the positions and semantic connectivity of the characters. A processor recognizes text blocks of related characters based on the semantic connectivity analysis. A processor outputs the text blocks associated with the related characters.