Abstract: A method of tuning optoelectronic transceivers in an optical network may include powering on a first optoelectronic transceiver, setting a channel wavelength of the first optoelectronic transceiver, transmitting a first request command from the first optoelectronic transceiver through the optical network to a second optoelectronic transceiver, and non-iteratively changing a channel wavelength of the first optoelectronic transceiver until a second request command is received from the second optoelectronic transceiver. The second request command may indicate to the first optoelectronic transceiver that the channel wavelength set by the first optoelectronic transceiver is able to travel through the optical network between the first optoelectronic transceiver and the second optoelectronic transceiver.

Abstract: A method of tuning optoelectronic transceivers in an optical network may include powering on a first optoelectronic transceiver, setting a channel wavelength of the first optoelectronic transceiver, transmitting a first request command from the first optoelectronic transceiver through the optical network to a second optoelectronic transceiver, and non-iteratively changing a channel wavelength of the first optoelectronic transceiver until a second request command is received from the second optoelectronic transceiver. The second request command may indicate to the first optoelectronic transceiver that the channel wavelength set by the first optoelectronic transceiver is able to travel through the optical network between the first optoelectronic transceiver and the second optoelectronic transceiver.

Abstract: A method of tuning optoelectronic transceivers in an optical network may include powering on an optoelectronic transceiver, setting the channel wavelength of the optoelectronic transceiver, transmitting a request command from the optoelectronic transceiver through the optical network to another optoelectronic transceiver; and waiting to receive a second request command from the another optoelectronic transceiver.

Abstract: A device for generating sum-of-products data includes an array of variable resistance cells, variable resistance cells in the array each comprising a programmable threshold transistor and a resistor connected in parallel, the array including n columns of cells including strings of series-connected cells and m rows of cells. Control and bias circuitry are coupled to the array, including logic for programming the programmable threshold transistors in the array with thresholds corresponding to values of a weight factor Wmn for the corresponding cell. Input drivers are coupled to corresponding ones of the m rows of cells, the input drivers selectively applying inputs Xm to rows m. Column drivers are configured to apply currents In to corresponding ones of the n columns of cells. Voltage sensing circuits operatively coupled to the columns of cells.

Abstract: A method of tuning optoelectronic transceivers in an optical network may include powering on an optoelectronic transceiver, setting the channel wavelength of the optoelectronic transceiver, transmitting a request command from the optoelectronic transceiver through the optical network to another optoelectronic transceiver; and waiting to receive a second request command from the another optoelectronic transceiver.

Abstract: A method for accelerating a convolution of a kernel matrix over an input matrix for computation of an output matrix using in-memory computation involves storing in different sets of cells, in an array of cells, respective combinations of elements of the kernel matrix or of multiple kernel matrices. To perform the convolution, a sequence of input vectors from an input matrix is applied to the array. Each of the input vectors is applied to the different sets of cells in parallel for computation during the same time interval. The outputs from each of the different sets of cells generated in response to each input vector are sensed to produce a set of data representing the contributions of that input vector to multiple elements of an output matrix. The sets of data generated across the input matrix are used to produce the output matrix.

Abstract: In an example, a communication module includes an optical transmitter, an optical receiver, and a periodical filter. The optical transmitter is configured to emit an outbound optical signal. The optical receiver is configured to receive an inbound optical signal. A first frequency of the outbound optical signal is offset from a second frequency of the inbound optical signal by an amount less than a channel spacing of a multiplexer/demultiplexer implemented in an optical communication system that includes the communication module. The periodical filter is positioned in optical paths of both the outbound optical signal and the inbound optical signal and has a transmission spectrum with periodic transmission peaks and troughs. The first frequency of the outbound optical signal may be aligned to one of the transmission peaks and the second frequency of the inbound optical signal may be aligned to one of the transmission troughs, or vice versa.

Abstract: A device for generating sum-of-products data includes an array of variable resistance cells, variable resistance cells in the array each including a transistor and a programmable resistor connected in parallel, the array including n columns of cells including strings of series-connected cells and m rows of cells. Control and bias circuitry are coupled to the array, including logic for programming the programmable resistors in the array with resistances corresponding to values of a weight factor Wmn for the corresponding cell. Alternatively, the resistances can be programmed during manufacture. Input drivers are coupled to corresponding ones of the m rows of cells, the input drivers selectively applying inputs Xm to rows m. Column drivers are configured to apply currents In to corresponding ones of the n columns of cells. Voltage sensing circuits operatively coupled to the columns of cells.

Abstract: A non-volatile memory and its reading method are provided. The reading method includes: erasing a plurality of memory cells in a memory cell string; setting a target memory cell of the memory cells, setting an initial voltage, generating a plurality of programming voltages by gradually increasing the initial voltage based on a step value, sequentially performing a plurality of programming operations by the target memory cell according to the programming voltages, and verifying the target memory cell to obtain a first verifying current during the programming operations; setting a corresponding programming voltage as a target voltage through determining the first verifying current and a first reference current; and performing the programming operations on the memory cells other than the target memory cell according to the target voltage and setting the memory cell string as a reading reference memory cell string.

Abstract: An adjusting mechanism and a head mounted display are provided. The adjusting mechanism includes a band, a rotating shaft, a knob, a driving member, and a holder. The rotating shaft has a first ring tooth around a central axis. The band is driven by the rotating shaft to move relative to the rotating shaft when the rotating shaft rotates around the central axis. The knob has a plurality of chutes. Each chute has a first section and a second section. The depth of each first section is deeper than the depth of each second section. The driving member has a second ring tooth, a plurality of guiding pins, and a plurality of pawls. The driving member is assembled to the knob, and the guiding pins are located in the chutes. The holder has a circular unidirectional tooth. The band limits the rotation of the holder relative to the band. The circular unidirectional tooth is configured to be coupled with these pawls to limit the rotation of the driving member relative to the holder in a single direction.

Abstract: A neural network system includes a doping well having a first conductivity, a memory string having a plurality of memory cells each include a gate and a source/drain with a second conductivity disposed in the doping well, a buried channel layer having the second conductivity and disposed in the doping well, a word line driver used to apply input voltages corresponding to a plurality of input variations of terms in the sum-of-products operations, a voltage sensing circuit used to apply a constant current into the memory string and to sensing a voltage, a controller used to program/read the memory cells for acquiring a plurality of threshold voltages corresponds to weights of the terms in the sum-of-products operations. When programming/reading the threshold voltages, a first bias voltage is applied to the first doping well; and when sensing the voltage, a second bias voltage is applied to the first doping well.

Abstract: A neural network system includes a doping well having a first conductivity, a memory string having a plurality of memory cells each include a gate and a source/drain with a second conductivity disposed in the doping well, a buried channel layer having the second conductivity and disposed in the doping well, a word line driver used to apply input voltages corresponding to a plurality of input variations of terms in the sum-of-products operations, a voltage sensing circuit used to apply a constant current into the memory string and to sensing a voltage, a controller used to program/read the memory cells for acquiring a plurality of threshold voltages corresponds to weights of the terms in the sum-of-products operations. When programing/reading the threshold voltages, a first bias voltage is applied to the first doping well; and when sensing the voltage, a second bias voltage is applied to the first doping well.

Abstract: Disclosed herein are humanized antibodies, antigen-binding fragments thereof, and antibody conjugates, that are capable of specifically binding to certain biantennary Lewis antigens, which antigens are expressed in a variety of cancers. The presently disclosed antibodies are useful to target antigen-expressing cells for treatment or detection of disease, including various cancers. Also provided are polynucleotides, vectors, and host cells for producing the disclosed antibodies and antigen-binding fragments thereof. Pharmaceutical compositions, methods of treatment and detection, and uses of the antibodies, antigen-binding fragments, antibody conjugates, and compositions are also provided.

Abstract: A contact hole structure includes a substrate, an interlayer dielectric (ILD), a conductive layer and an insulating capping layer. The ILD is disposed on the substrate and has a first opening. The conductive layer is disposed in the ILD and aligns the first opening. The insulating capping layer has a spacer disposed on a first sidewall of the first opening, wherein the spacer contacts to the conductive layer and defines a second opening in the first opening, so as to expose a portion of the conductive layer.

Abstract: A multi-state memory device includes a first memory element, a second memory element, a first controlling element and a second controlling element. The second memory element has a memory cell structure identical to that of the first memory element and connects to the first memory element in series. The first controlling element is connected to the first memory element either in series or in parallel. The second controlling element has a characteristic value identical to that of the first controlling element and is connected to the second memory element by a connection structure identical to that of the first controlling element. When the first memory element receives a first signal and a second signal through the first controlling element, a first state value and a second state value are generated correspondingly, and the characteristic value is greater than the first state value and less than the second state value.

Abstract: A method for treating a semiconductor structure comprising memory devices is provided, wherein a forming process is conducted to initialize operation of the memory devices. The semiconductor structure is subjected to a forming thermal treatment, and step of saving data to the memory devices is performed after the forming thermal treatment.

Abstract: Disclosed is a memory device including plural bit lines, plural word lines and a control circuit. The bit lines are configured to receive pixel data of an image. Each word line includes plural factor units. The factor units of each word line are configured differently according to plural factors of a filter. When processing a first area of the image by the filter, the control circuit inputs the pixel data within the first area of the image to the bit lines, and enables one of the word lines for operation. When processing a second area of the image by the filter, the control circuit maintains the pixel data within the second area overlapping the first area on the bit lines, and inputs the pixel data within the second area which doesn't overlap the first area to the bit lines, and enables another one of the word lines for operation.

Abstract: In an example, a communication module includes an optical transmitter, an optical receiver, and a periodical filter. The optical transmitter is configured to emit an outbound optical signal. The optical receiver is configured to receive an inbound optical signal. A first frequency of the outbound optical signal is offset from a second frequency of the inbound optical signal by an amount less than a channel spacing of a multiplexer/demultiplexer implemented in an optical communication system that includes the communication module. The periodical filter is positioned in optical paths of both the outbound optical signal and the inbound optical signal and has a transmission spectrum with periodic transmission peaks and troughs. The first frequency of the outbound optical signal may be aligned to one of the transmission peaks and the second frequency of the inbound optical signal may be aligned to one of the transmission troughs, or vice versa.

Abstract: An adjusting mechanism and a head mounted display are provided. The adjusting mechanism includes a band, a rotating shaft, a knob, a driving member, and a holder. The rotating shaft has a first ring tooth around a central axis. The band is driven by the rotating shaft to move relative to the rotating shaft when the rotating shaft rotates around the central axis. The knob has a plurality of chutes. Each chute has a first section and a second section. The depth of each first section is deeper than the depth of each second section. The driving member has a second ring tooth, a plurality of guiding pins, and a plurality of pawls. The driving member is assembled to the knob, and the guiding pins are located in the chutes. The holder has a circular unidirectional tooth. The band limits the rotation of the holder relative to the band. The circular unidirectional tooth is configured to be coupled with these pawls to limit the rotation of the driving member relative to the holder in a single direction.

Abstract: Disclosed is a memory device including plural bit lines, plural word lines and a control circuit. The bit lines are configured to receive pixel data of an image. Each word line includes plural factor units. The factor units of each word line are configured differently according to plural factors of a filter. When processing a first area of the image by the filter, the control circuit inputs the pixel data within the first area of the image to the bit lines, and enables one of the word lines for operation. When processing a second area of the image by the filter, the control circuit maintains the pixel data within the second area overlapping the first area on the bit lines, and inputs the pixel data within the second area which doesn't overlap the first area to the bit lines, and enables another one of the word lines for operation.