Abstract: A multi-state memory device includes a first memory element, a second memory element, a first controlling element and a second controlling element. The second memory element has a memory cell structure identical to that of the first memory element and connects to the first memory element in series. The first controlling element is connected to the first memory element either in series or in parallel. The second controlling element has a characteristic value identical to that of the first controlling element and is connected to the second memory element by a connection structure identical to that of the first controlling element. When the first memory element receives a first signal and a second signal through the first controlling element, a first state value and a second state value are generated correspondingly, and the characteristic value is greater than the first state value and less than the second state value.

Abstract: A method for treating a semiconductor structure comprising memory devices is provided, wherein a forming process is conducted to initialize operation of the memory devices. The semiconductor structure is subjected to a forming thermal treatment, and step of saving data to the memory devices is performed after the forming thermal treatment.

Abstract: Disclosed is a memory device including plural bit lines, plural word lines and a control circuit. The bit lines are configured to receive pixel data of an image. Each word line includes plural factor units. The factor units of each word line are configured differently according to plural factors of a filter. When processing a first area of the image by the filter, the control circuit inputs the pixel data within the first area of the image to the bit lines, and enables one of the word lines for operation. When processing a second area of the image by the filter, the control circuit maintains the pixel data within the second area overlapping the first area on the bit lines, and inputs the pixel data within the second area which doesn't overlap the first area to the bit lines, and enables another one of the word lines for operation.

Abstract: In an example, a communication module includes an optical transmitter, an optical receiver, and a periodical filter. The optical transmitter is configured to emit an outbound optical signal. The optical receiver is configured to receive an inbound optical signal. A first frequency of the outbound optical signal is offset from a second frequency of the inbound optical signal by an amount less than a channel spacing of a multiplexer/demultiplexer implemented in an optical communication system that includes the communication module. The periodical filter is positioned in optical paths of both the outbound optical signal and the inbound optical signal and has a transmission spectrum with periodic transmission peaks and troughs. The first frequency of the outbound optical signal may be aligned to one of the transmission peaks and the second frequency of the inbound optical signal may be aligned to one of the transmission troughs, or vice versa.

Abstract: An adjusting mechanism and a head mounted display are provided. The adjusting mechanism includes a band, a rotating shaft, a knob, a driving member, and a holder. The rotating shaft has a first ring tooth around a central axis. The band is driven by the rotating shaft to move relative to the rotating shaft when the rotating shaft rotates around the central axis. The knob has a plurality of chutes. Each chute has a first section and a second section. The depth of each first section is deeper than the depth of each second section. The driving member has a second ring tooth, a plurality of guiding pins, and a plurality of pawls. The driving member is assembled to the knob, and the guiding pins are located in the chutes. The holder has a circular unidirectional tooth. The band limits the rotation of the holder relative to the band. The circular unidirectional tooth is configured to be coupled with these pawls to limit the rotation of the driving member relative to the holder in a single direction.

Abstract: Disclosed is a memory device including plural bit lines, plural word lines and a control circuit. The bit lines are configured to receive pixel data of an image. Each word line includes plural factor units. The factor units of each word line are configured differently according to plural factors of a filter. When processing a first area of the image by the filter, the control circuit inputs the pixel data within the first area of the image to the bit lines, and enables one of the word lines for operation. When processing a second area of the image by the filter, the control circuit maintains the pixel data within the second area overlapping the first area on the bit lines, and inputs the pixel data within the second area which doesn't overlap the first area to the bit lines, and enables another one of the word lines for operation.

Abstract: A device for generating sum-of-products data includes an array of variable resistance cells, variable resistance cells in the array each including a transistor and a programmable resistor connected in parallel, the array including n columns of cells including strings of series-connected cells and m rows of cells. Control and bias circuitry are coupled to the array, including logic for programming the programmable resistors in the array with resistances corresponding to values of a weight factor Wmn for the corresponding cell. Alternatively, the resistances can be programmed during manufacture. Input drivers are coupled to corresponding ones of the m rows of cells, the input drivers selectively applying inputs Xm to rows m. Column drivers are configured to apply currents In to corresponding ones of the n columns of cells. Voltage sensing circuits operatively coupled to the columns of cells.

Abstract: An array of variable resistance cells based on a programmable threshold transistor and a resistor connected in parallel is described. An input voltage applied to the transistor, and the programmable threshold of the transistor, can represent variables of sum-of-products operations. Programmable threshold transistors in the variable resistance cells comprise charge trapping memory transistors, such as floating gate transistors or dielectric charge trapping transistors. The resistor in the variable resistance cells can comprise a buried implant resistor connecting the current-carrying terminals (e.g. source and drain) of the programmable threshold transistor. A voltage sensing sense amplifier is configured to sense the voltage generated by the variable resistance cells as a function of an applied current and the resistance of the variable resistance cells.

Abstract: A module, system and method adjusts a tunable filter to have an adjustable frequency response based on one of an outbound optical signal on a transmit channel and an inbound optical signal on a receive channel. The tunable filter is in an optical path of the outbound optical signal and in an optical path of the inbound optical signal. The transmit and the receive channels are configured as part of a channel plan of a bidirectional (bi-di) dense wavelength division multiplexing (DWDM) system.

Abstract: A device for generating sum-of-products data includes an array of variable resistance cells, variable resistance cells in the array each comprising a programmable threshold transistor and a resistor connected in parallel, the array including n columns of cells including strings of series-connected cells and m rows of cells. Control and bias circuitry are coupled to the array, including logic for programming the programmable threshold transistors in the array with thresholds corresponding to values of a weight factor Wmn for the corresponding cell. Input drivers are coupled to corresponding ones of the m rows of cells, the input drivers selectively applying inputs Xm to rows m. Column drivers are configured to apply currents In to corresponding ones of the n columns of cells. Voltage sensing circuits operatively coupled to the columns of cells.

Abstract: An array of variable resistance cells based on a programmable threshold transistor and a resistor connected in parallel is described, including 3D and split gate variations. An input voltage applied to the transistor, and the programmable threshold of the transistor, can represent variables of sum-of-products operations. Programmable threshold transistors in the variable resistance cells comprise charge trapping memory transistors, such as floating gate transistors or dielectric charge trapping transistors. The resistor in the variable resistance cells can comprise a buried implant resistor connecting the current-carrying terminals (e.g. source and drain) of the programmable threshold transistor. A voltage sensing sense amplifier is configured to sense the voltage generated by the variable resistance cells as a function of an applied current and the resistance of the variable resistance cells.

Abstract: A neuromorphic computing device includes a plurality of row lines, a plurality of column lines and a plurality of synapses. The synapses are positioned at intersections of the row lines and column lines, respectively. The synapses include a first synapse and a second synapse. The first synapse includes a first resistance-adjustable element and a first transistor connected to the first resistance-adjustable element in series. The first transistor has a first aspect ratio and is configured to receive a first turn-on voltage. The second synapse includes a second resistance-adjustable element and a second transistor connected to the second resistance-adjustable element in series. The second transistor has a second aspect ratio and is configured to receive a second turn-on voltage. The first aspect ratio differs from the second aspect ratio, and/or the first turn-on voltage differs from the second turn-on voltage.

Abstract: In an example, a communication module includes an optical transmitter, an optical receiver, and a periodical filter. The optical transmitter is configured to emit an outbound optical signal. The optical receiver is configured to receive an inbound optical signal. A first frequency of the outbound optical signal is offset from a second frequency of the inbound optical signal by an amount less than a channel spacing of a multiplexer/demultiplexer implemented in an optical communication system that includes the communication module. The periodical filter is positioned in optical paths of both the outbound optical signal and the inbound optical signal and has a transmission spectrum with periodic transmission peaks and troughs. The first frequency of the outbound optical signal may be aligned to one of the transmission peaks and the second frequency of the inbound optical signal may be aligned to one of the transmission troughs, or vice versa.

Abstract: A flexible printed circuit board including an annular main board and a plurality of branches connected with the annular main board is provided. Each of the branches includes an extension portion connected with the annular main board and a bonding portion, and an electronic component is adapted to be disposed on the bonding portion. A supporting holder including an annular base, two wing structures, and a plurality of mounting portions is also disclosed, wherein the wing structures extend outward from the annular base and the mounting portions are located on the annular base and the wing structures. Further, a controller including the flexible printed circuit board and the supporting holder aforementioned is disclosed, wherein the annular main board is disposed on the annular base and the branches are disposed on the annular base and the wing structures, such that the bonding portions are located on the mounting portions correspondingly.

Abstract: A neuromorphic computing system includes a synapse array, a switching circuit, a sensing circuit and a processing circuit. The synapse array includes row lines, column lines and synapses. The processing circuit is coupled to the switching circuit and the sensing circuit and is configured to connect a particular column line in the column lines to the first terminal by using the switching circuit, obtain a first voltage value from the particular column line by using the sensing circuit when the particular line is connected to the first terminal, connect the particular column line to the second terminal by using the switching circuit, obtain a second voltage value from the particular column line by using the sensing circuit when the particular line is connected to the second terminal, and estimate a sum-of-product sensing value according to a voltage difference between the first voltage value and the second voltage value.

Abstract: A contact hole structure includes a substrate, an interlayer dielectric (ILD), a conductive layer and an insulating capping layer. The ILD is disposed on the substrate and has a first opening. The conductive layer is disposed in the ILD and aligns the first opening. The insulating capping layer has a spacer disposed on a first sidewall of the first opening, wherein the spacer contacts to the conductive layer and defines a second opening in the first opening, so as to expose a portion of the conductive layer.

Abstract: An array of resistance cells has a number M of rows and a number N of columns of resistance cells. Each cell comprises a transistor having a threshold, representing a weight factor Wnm of the cell, and a resistive element in series with the transistor. Each cell has a cell resistance having a first value when the transistor is on and a second value when the transistor is off. A set of source lines is coupled to the resistance cells in respective columns. A set of bit lines is coupled to the resistance cells in respective rows, signals on the bit lines representing inputs x(m) to the respective rows. A set of word lines is coupled to gates of the transistors in the resistance cells in respective columns. Current sensed at a particular source line represents a sum of products of the inputs x(m) by respective weight factors Wnm.

Abstract: An optoelectronic module may include an optical receiver optically coupled with an optical fiber. The optical receiver may be configured to receive time synchronization signals from the optical fiber. The time synchronization signals may be frequency modulated, wavelength modulated, or amplitude modulated and may be received along with received data signals. A time synchronization signal detection module may be communicatively coupled to the optical receiver. The time synchronization signal detection module may be configured to receive the time synchronization signals that are transmitted through the optical fiber and detect frequency modulations, wavelength modulations, or amplitude modulations to recover the time synchronization signals.

Abstract: A method for treating a semiconductor structure is provided. A semiconductor structure comprising memory devices is provided. A forming process is conducted to initialize operation of the memory devices. The semiconductor structure is subjected to a forming thermal treatment, and step of saving data to the memory devices is performed after the forming thermal treatment.

Abstract: A system or a network may include an optoelectronic module that includes an optical transmitter optically coupled with an optical fiber, and a controller communicatively coupled to the optical transmitter. The controller may be configured to operate the optical transmitter to transmit data signals through the optical fiber. The optoelectronic module may be configured to transmit time synchronization signals through the optical fiber along with the data signals.