Abstract: A light emitting display apparatus and a driving method thereof. The light emitting display apparatus includes a display panel configured to display an image, a timing controller including an on bias stress (OBS) voltage calculator configured to calculate an optimal OBS voltage value on the basis of a refresh rate of the display panel and a data signal which is to be supplied to the display panel, and a power supply configured to generate an OBS voltage which is to be supplied to the display panel, on the basis of the optimal OBS voltage value.

Abstract: A contact arrangement includes a plurality of contact groups. At least one of the contact groups includes a plurality of shared contacts, a plurality of dedicated contacts, and a plurality of ground contacts. The shared contacts in a first mode or a second mode transmit signals corresponding to the first mode or the second mode. The dedicated contacts transmit the signals corresponding to the first mode and do not transmit the signals corresponding to the second mode. The ground contacts surround the shared contacts and the dedicated contacts.

Abstract: Methods are provided herein for patterning extreme ultraviolet (EUV) (or lower wavelength) photoresists, such metal-oxide photoresists. A patterning layer comprising a metal-oxide photoresist is formed on one or more underlying layers provided on a substrate, and portions of the patterning layer not covered by a mask overlying the patterning layer are exposed to EUV or lower wavelengths light. A cyclic dry process is subsequently performed to remove portions of the patterning layer exposed to the EUV or lower wavelength light (i.e., the exposed portions) and develop the metal-oxide photoresist pattern. The cyclic dry process generally includes a plurality of deposition and etch steps, wherein the deposition step selectively deposits a protective layer onto unexposed portions of the patterning layer by exposing the substrate to a first plasma, and the etch step selectively etches the exposed portions of the patterning layer by exposing the substrate to a second plasma.

Abstract: A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal patterns separated by trenches in the metal layer. The method further includes performing a second etching process using a second etchant and a passivant to extend the trenches in the dielectric layer, resulting in a passivation layer formed along sidewalls of the metal patterns.

Abstract: A cockpit module assembly for vehicles in accordance with the present disclosure includes a dashboard, an accommodation unit concavely formed in the dashboard, and a reception unit detachably mounted on the accommodation unit and including an internal space.

Abstract: Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation and modeling of function safety and fault management of an electronic device. A method for simulating a safety circuit includes providing an electronic architectural design to perform one or more functional behaviors of the electronic device in accordance with an electronic design specification. The method further includes modeling the safety circuit of the electronic architectural design and one or more other electronic circuits of the electronic architectural design that communicate with the safety circuit. The method further includes simulating, using the modeling, operation of the safety circuit while the electronic architectural design is performing the one or more functional behaviors. The method also includes determining whether the simulated operation of the safety circuit satisfies the electronic design specification.

Abstract: A vehicle indoor illumination device includes a housing having an upper opening with an internal space formed therein, a light-emitting unit disposed on the housing to emit light, a diffuser disposed outside the light-emitting unit in a manner as to close the upper opening of the housing to allow the light emitted from the light-emitting unit to diffuse to the outside, a cover part disposed on an outer surface of the diffuser and on which a light pattern is formed through scattering of the light transmitted through the diffuser, and a controller configured to receive an operation signal of a vehicle electronic part to control an operation of the light-emitting unit.

Abstract: A semiconductor structure includes a first transistor and a second transistor. The first transistor includes a first fin structure and a first metal gate over the first fin structure. The first metal gate includes a first work function metal layer and a first gap-filling metal layer. The second transistor includes a second fin structure and a second metal gate over the second fin structure. The second metal gate includes a second work function metal layer and a second gap-filling metal layer. The first metal gate and the second metal gate provide a same work function. A width of the first metal gate is equal to a width of the second metal gate. A width of a top surface of the first gap-filling metal layer is greater than a width of a top surface of the second gap-filling metal layer.

Abstract: A method for forming a semiconductor device can include providing a substrate having a patterned structure comprising semiconductor materials, where the patterned structure has a side profile including indentations, such as a patterned film stack, and where a spacer layer is conformally deposited over the patterned structure and within the indentations, reacting a surface of the spacer layer with a plasma-excited first etch gas to form a reacted layer on the spacer layer, wherein the plasma-excited first etch gas includes fluorine, hydrogen, and nitrogen, and removing at least part of the reacted layer by ion bombardment from exposure to a plasma-excited second etch gas. The spacer layer can be SiOCN. The reacted layer can be ammonium fluorosilicate. The first etch gas can contain SF6, H2, and N2, or NF3, H2, and N2. The reacting and removing can be done at room temperature in a same chamber.

Abstract: A liquid crystal pixel includes liquid crystals, a source electrode, and a transparent common electrode layer. The liquid crystals are configured to change an alignment of the liquid crystals in response to a voltage applied across the source electrode and the transparent common electrode layer. The slit in the transparent common electrode layer includes multiple angled sections.

Abstract: A liquid crystal display (LCD) system for a head mounted display includes an LCD panel and a backlight unit. The LCD panel includes a color filter on array (COA) configuration. The backlight unit includes a light adjustment layer to adjust at least one characteristic of illumination light from a light source to tune the illumination light for enlarging an emission cone of display light.

Abstract: A non-transitory computer-readable storage medium is encoded with a set of instructions for designing a semiconductor device using electronic system level (ESL) modeling for machine learning applications that, when executed by at least one processor, cause the at least one processor to: retrieve a source code operable to execute a plurality of operations of a machine learning algorithm; classify a first group of the plurality of operations as slow group operations and classify a second group of the plurality of operations as fast group operations, based on a time required to complete each operation; define a neural network operable to execute the slow group operations; define a trained neural network configuration including a plurality of interconnected neurons operable to execute the slow group operations; and generate an ESL platform for evaluating a design of a semiconductor device based on the trained neural network configuration.

Abstract: A method for increasing the oil yield in an ethanol production process comprising: adding a liquid enzyme formulation having at least one enzyme, a buffering agent, a stabilizer, and a preservative wherein the pH of the enzyme formulation is about pH 6.0-8.0 to a beer, a distillation, a whole stillage, a centrifugation, a thin stillage, an evaporator, a syrup, or an oil recovery unit.

Abstract: The present invention relates to an E. coli hisG-derived ATP-phosphoribosyltransferase variant having a reduced feedback inhibition by histidine and a strain expressing the same. The variant may maintain its activity even at a high histidine concentration, thus increasing histidine production.

Abstract: Disclosed is a device for separating wafers sheet by sheet from ingot blocks having a plurality of sliced wafers bonded thereto. The wafer separation device includes a water tank configured to receive the ingot blocks and a liquid, a heating member configured to heat the liquid, a barrier rib provided in the water tank to isolate the ingot blocks from each other, an arm configured to separate the wafers sheet by sheet from the ingot blocks, and a sensor configured to sense the barrier rib.

Abstract: An Internet of Things (IoT) system includes a plurality of terminal devices, a cloud device and a human machine interface (HMI) device. The cloud device is communicatively connected to the terminal devices. The human machine interface (HMI) device is communicatively connected to the terminal devices via a plurality of first communication channels, and communicatively connected to the cloud device via a first dedicated communication channel. The HMI device determines a subscription sequence according to priority information of a plurality of control commands, and schedules and dynamically subscribes to the first communication channels according to the subscription sequence. The HMI device respectively determines whether the terminal devices are adjacent to the HMI device, and transmits switch transmission mode request messages corresponding to the terminal devices adjacent to the HMI device to the cloud device via the first dedicated communication channel.

Abstract: Disclosed is an exhaust gas purification catalyst with a multilayered structure including an ultra-thin layer with a thickness of 20 micrometers or less and containing Rh, Pd, or both as at least one precious metal component, and to a method of manufacturing the same. The method includes a step of forming an ultra-thin layer having a thickness of 20 micrometers or less as the top layer of the catalyst by applying a polymer coating solution containing a polymer having a functional group capable of chelating with the precious metal component(s) on the surface of the multilayer structure of the catalyst. The disclosed catalyst exhibits improved removal efficiency for THC, CO, and NOx contained compared to an existing thin film-type catalyst. Since the disclosed catalyst is coated with a thin coating layer containing at least a portion of precious metal components, the disclosed catalyst exhibits improved performance while using the same amount of precious metal components as in conventional catalysts.

Abstract: A display device is provided. The display device includes a first sensing electrode extending in a first direction, the first sensing electrode including a first sub-sensing electrode and a second sub-sensing electrode spaced apart from each other in a touch area which senses a touch input; a second sensing electrode extending in a second direction intersecting the first direction, the second sensing electrode including a third sub-sensing electrode and a fourth sub-sensing electrode spaced apart from each other in the touch area; a first touch signal line connected to the first sub-sensing electrode and the second sub-sensing electrode; and a second touch signal line connected to the third sub-sensing electrode and the fourth sub-sensing electrode.

Abstract: A first layer of anisotropic material extends along a first plane and includes anisotropic components being parallel to a second plane non-parallel and non-perpendicular to the first plane. The anisotropic components are arranged in cycloidal or helical patterns. The cycloidal or helical patterns define one or more Bragg planes that are non-parallel and non-perpendicular to the first plane and either substantially parallel or substantially perpendicular to the second plane.

Abstract: A memory system includes multiple groups of primary memory cells residing in a first die or a stack of first dies, multiple groups of cache memory cells residing in a second die, an interposer, and control circuits residing in a third die. Each group of the cache memory cells is associated with a corresponding group of the primary memory cells. The first die or the stack of first dies is coupled to a top surface of the second die through a first group of bumps. A bottom surface of the second die is coupled to a top surface of the interposer through a second group of bumps. The control circuits are associated with the primary memory cells and the cache memory cells. The third die is positioned aside the second die and coupled to the top surface of the interposer through a third group of pumps.