Patents by Inventor Yun Wei

Yun Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240181568
    Abstract: A method for producing graphene, configured for forming a graphene layer on a surface of an object. The method includes steps of: depositing a poly-p-xylene material layer on the surface: and converting the poly-p-xylene material layer into a graphene layer by using a laser sintering process or a plasma-assisted sintering process.
    Type: Application
    Filed: March 3, 2023
    Publication date: June 6, 2024
    Inventors: Yun-Wei TSAI, Hsien-Yeh CHEN, Shu-Man HU, Chin-Yun LEE, Yi-Chang WU, Yen-Hsun LIN, Kuo-Wei TSAO, Chi-Liang TSAI
  • Patent number: 11996428
    Abstract: An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Feng-Chien Hsieh, Yun-Wei Cheng, Kuo-Cheng Lee, Hsin-Chi Chen
  • Publication number: 20240170686
    Abstract: The present disclosure provides a catalyst for urea oxidation reaction, a method of preparing the same, and a use thereof. The catalyst for urea oxidation reaction includes transition metal oxides forming on a metal substrate, and the transition metals includes Fe, Co, and Ni. The method for preparing the catalyst includes contacting the metal substrate with a homogeneous solution to obtain the catalyst for urea oxidation reaction, and the homogeneous solution includes transition metal nitrate precursors and a sulfur precursor. The method of the present application is a low-cost, high-efficiency, and simple process that can be mass produced.
    Type: Application
    Filed: November 28, 2022
    Publication date: May 23, 2024
    Inventors: JYH-MING TING, ZI-YUN WEI
  • Publication number: 20240163072
    Abstract: The present disclosure provides a calibration method and readable computer storage medium. The calibration method includes: configuring a reference signal source to output a reference signal; delaying the reference signal through a delay chain to output a delay signal; synchronous sampling the reference signal and the delay signal; adding 1 count and obtaining a final count value when the sampling result is in the preset state; determining whether a ratio between the count value and the first quantity is within a preset range; obtaining the average delay time according to the time width of the reference signal wave and the number of the delay units opened in the delay chain when the ratio is within the preset range; and outputting a control signal to the clock recovery circuit according to the average delay time to calibrate the delay time of the clock recovery circuit.
    Type: Application
    Filed: February 2, 2023
    Publication date: May 16, 2024
    Inventors: YU-CHIEH HSU, LING-WEI KE, CHUN-YU CHEN, HONG-YUN WEI
  • Patent number: 11984429
    Abstract: Leadless power amplifier (PA) packages having topside termination interposer (TTI) arrangements, and associated fabrication methods, are disclosed. Embodiments of the leadless PA package include a base flange, a first set of interposer mount pads, a first RF power die, a package body. The first RF power die is attached to a die mount surface of the base flange and electrically interconnected with the first set of interposer mount pads. The TTI arrangement is electrically coupled to the first set of interposer mount pads and projects therefrom in the package height direction. The package body encloses the first RF power die and having a package topside surface opposite the lower flange surface. Topside input/output terminals of the PA package are accessible from the package topside surface and are electrically interconnected with the first RF power die through the TTI arrangement and the first set of interposer mount pads.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: May 14, 2024
    Assignee: NXP USA, Inc.
    Inventors: Yun Wei, Scott Duncan Marshall, Lakshminarayan Viswanathan, Taek Kyu Kim, Ricardo Uscola, Fernando A. Santos
  • Patent number: 11985438
    Abstract: A pixel array includes a plurality of dark pixel sensors configured to generate dark current calibration information for a plurality of visible light pixel sensors included in the pixel array. The plurality of dark pixel sensors may generate respective dark current measurements for each of the plurality of visible light pixel sensors or for small subsets of the plurality of visible light pixel sensors. In this way, each of the plurality of visible light pixel sensors may be individually calibrated (or small subsets of the plurality of visible light pixel sensors may be individually calibrated) based on an estimated dark current experienced by each of the plurality of visible light pixel sensors. This may enable more accurate dark current calibration of the visible light pixel sensors included in the pixel array, and may be used to account for large differences in estimated dark currents for the visible light pixel sensors.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Feng-Chien Hsieh, Yun-Wei Cheng, Kuo-Cheng Lee
  • Publication number: 20240155260
    Abstract: A pixel array includes a plurality of dark pixel sensors configured to generate dark current calibration information for a plurality of visible light pixel sensors included in the pixel array. The plurality of dark pixel sensors may generate respective dark current measurements for each of the plurality of visible light pixel sensors or for small subsets of the plurality of visible light pixel sensors. In this way, each of the plurality of visible light pixel sensors may be individually calibrated (or small subsets of the plurality of visible light pixel sensors may be individually calibrated) based on an estimated dark current experienced by each of the plurality of visible light pixel sensors. This may enable more accurate dark current calibration of the visible light pixel sensors included in the pixel array, and may be used to account for large differences in estimated dark currents for the visible light pixel sensors.
    Type: Application
    Filed: January 18, 2024
    Publication date: May 9, 2024
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE
  • Publication number: 20240144385
    Abstract: A system for the cryptographically-secure, autonomous control of devices comprising, connected to or remotely operating devices in an electrically powered network and the transaction of the benefits, costs or value created by or transacted through the devices in this electrically powered network.
    Type: Application
    Filed: May 25, 2023
    Publication date: May 2, 2024
    Inventors: Lawrence Orsini, Yun Wei, Joseph Lubin
  • Patent number: 11956553
    Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.
    Type: Grant
    Filed: November 8, 2021
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsin-Chi Chen
  • Publication number: 20240113237
    Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Inventors: FENG-CHIEN HSIEH, YUN-WEI CHENG, KUO-CHENG LEE, CHENG-MING WU, PING KUAN CHANG
  • Publication number: 20240096923
    Abstract: The image sensing structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes at least one first unit. The at least one first unit includes a plurality of first interconnects adjacent to the top side of the first semiconductor device, a row selector, and an analog-to-digital converter (ADC) connected to the row selectors. The second semiconductor device includes at least one second unit. The at least one second unit includes a photodiode facing the top side of the second semiconductor device. The photodiode is configured to receive the light incident on the top side of the second semiconductor device. The top side of the first semiconductor device is bonded to the bottom side of the second semiconductor device.
    Type: Application
    Filed: January 6, 2023
    Publication date: March 21, 2024
    Inventors: FENG-CHIEN HSIEH, YUN-WEI CHENG, WEI-LI HU, KUO-CHENG LEE, CHENG-MING WU
  • Publication number: 20240090179
    Abstract: In one aspect, a computing device-implemented method includes receiving at least one triggering event signal from one or more components of a heat recovery system. The method also includes determining, based in part on the at least one triggering event signal, a computation workload assignment to be executed on one or more computation devices. The method further includes sending one or more command signals to the one or more computation devices. The one or more command signals include a portion of the computation workload assignment for execution by the one or more computation devices. The method also includes initiating capture of heat energy to be stored in one or more heat reservoirs, the heat energy being generated by the one or more computation device based upon the computation workload assignment.
    Type: Application
    Filed: April 3, 2023
    Publication date: March 14, 2024
    Inventors: Lawrence Orsini, Yun Wei
  • Publication number: 20240079422
    Abstract: A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.
    Type: Application
    Filed: April 27, 2023
    Publication date: March 7, 2024
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE, Cheng-Ming WU
  • Publication number: 20240047487
    Abstract: An image sensor device includes a semiconductor substrate having a first side, and a trench isolation structure dividing the substrate into sensing units. Each sensing unit includes a first gate electrode and a second gate electrode disposed on the first side, and a first pixel and a second pixel extending into the substrate and disposed between the first and second gate electrodes from a top view perspective. The first pixel is disposed under the second pixel and electrically connected to the first gate electrode, and the second pixel is electrically connected to the second gate electrode. A method of manufacturing a semiconductor structure includes forming a trench isolation in a semiconductor substrate; forming a first pixel in the substrate; forming a second pixel in the substrate over the first pixel; forming a first gate structure over the substrate; and forming a second gate structure over the second pixel.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: FENG-CHIEN HSIEH, YUN-WEI CHENG, WEI-LI HU, KUO-CHENG LEE, CHENG-MING WU
  • Publication number: 20240038804
    Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, the first isolation structure has an etch stop layer, the etch stop layer has an end portion, and the end portion has an H-like shape. The image sensor device includes a second isolation structure extending into the substrate from the back surface to the end portion. The second isolation structure surrounds a second portion of the light-sensing region.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 1, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • Publication number: 20240021009
    Abstract: An image sensing apparatus is disclosed. The image sensing apparatus includes a pixel array and micro lenses disposed above the pixel array. The pixel array includes sensing pixels configured to capture minutia points of a fingerprint and positioning pixels configured to provide positioning codes.
    Type: Application
    Filed: March 22, 2023
    Publication date: January 18, 2024
    Inventors: Feng-Chien Hsieh, Yun-Wei Cheng, Kuo-Cheng Lee, Cheng-Ming Wu, Wei-Li Hu
  • Publication number: 20240006458
    Abstract: An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.
    Type: Application
    Filed: August 4, 2023
    Publication date: January 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Feng-Chien Hsieh, Chia-Yen Hsu, Yun-Wei Cheng, Wei-Li Hu, Kuo-Cheng Lee, Hsin-Chi Chen
  • Publication number: 20230402488
    Abstract: A pixel sensor may include a vertically arranged (or vertically stacked) photodiode region and floating diffusion region. The vertical arrangement permits the photodiode region to occupy a larger area of a pixel sensor of a given size relative to a horizontal arrangement, which increases the area in which the photodiode region can collect photons. This increases performance of the pixel sensor and permits the overall size of the pixel sensor to be reduced. Moreover, the transfer gate may surround at least a portion of the floating diffusion region and the photodiode region, which provides a larger gate switching area relative to a horizontal arrangement. The increased gate switching area may provide greater control over the transfer of the photocurrent and/or may reduce switching delay for the pixel sensor.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 14, 2023
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE, Cheng-Ming WU
  • Publication number: 20230402478
    Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.
    Type: Application
    Filed: August 9, 2023
    Publication date: December 14, 2023
    Inventors: Yun-Wei CHENG, Chun-Hao Chou, Kuo-Cheng Lee, Ying-Hao Chen
  • Publication number: 20230403474
    Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.
    Type: Application
    Filed: August 3, 2023
    Publication date: December 14, 2023
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsin-Chi Chen