Abstract: The present invention provides a semiconductor device comprising at least one field effect transistor (FET) having source and drain (S/D) metal silicide layers with intrinsic tensile or compressive stress. First, a metal layer containing a silicide metal M is formed over S/D regions of a FET, followed by a first annealing step to form S/D metal silicide layers that comprise a metal silicide of a first phase (MSix). A silicon nitride layer is then formed over the FET, followed by a second annealing step. During the second annealing step, the metal silicide is converted from the first phase (MSix) into a second phase (MSiy) with x<y. The metal silicide conversion causes either volumetric shrinkage or expansion in the S/D metal silicide layers of the FET, which in turn generates intrinsic tensile or compressive stress in the S/D metal silicide layers under confinement by the silicon nitride layer.

Abstract: Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generating an environment filled with high-density plasma using source gases of at least silane, argon and nitrogen; biasing the substrate to a high frequency power of varying density, in a range between 0.8 W/cm2 and 5.0 W/cm2; and depositing the high-density plasma to the plurality of gate structures to form the compressive stress nitride film.

Abstract: Disclosed are a damascene and dual damascene processes both of which incorporate the use of a release layer to remove trace amounts of residual material between metal interconnect lines. The release layer is deposited onto a dielectric layer. The release layer comprises an organic material, a dielectric material, a metal or a metal nitride. Trenches are etched into the dielectric layer. The trenches are lined with a liner and filled with a conductor. The conductor and liner materials are polished off the release layer. However, trace amounts of the residual material may remain. The release layer is removed (e.g., by an appropriate solvent or wet etching process) to remove the residual material. If the trench is formed such that the release layer overlaps the walls of the trench, then when the release layer is removed another dielectric layer can be deposited that reinforces the corners around the top of the metal interconnect line.

Abstract: A bicycle saddle has a base frame and a pad covered on the base frame. The base frame has a narrow front portion with a plurality of first lower ventholes and a wide rear portion with a plurality of second lower ventholes. The pad has a plurality of first and second upper ventholes which are arranged in such a way that each upper venthole respectively corresponds to each lower venthole to together define an air channel. Whereby ambient air can flow through the whole areas of the saddle contacting with the buttocks and inner thighs of the cyclist during cycling to provide a better ventilation effect.

Abstract: A liquid crystal display includes a plurality of light sources of different colors and a control device. The control device is used to control the light sources to emit light with different duty cycles. Through persistence of vision, light generated by the light sources will form an image of desired colors. White balance can be achieved by controlling the duty cycles.

Abstract: A semiconductor structure that includes a Co-containing liner disposed between an oxygen-getter layer and a metal-containing conductive material is provided. The Co-containing liner, the oxygen-getter layer and the metal-containing conductive material form MOL metallurgy where the Co-containing liner replaces a traditional TiN liner. By “Co-containing” is meant that the liner includes elemental Co alone or elemental Co and at least one of P or B. In order to provide better step coverage of the inventive Co-containing liner within a high aspect ratio contact opening, the Co-containing liner is formed via an electroless deposition process.

Abstract: A heat dissipating device includes: a heat sink including a container adapted to be in contact with a heat generating source and adapted to store a coolant therein; a radiator unit disposed above the container and in fluid communication with the container; a fan unit disposed above the container and confronting the radiator unit; and a driving unit connected to the container for circulating the coolant through the container and the radiator unit.

Abstract: A focusing module includes a casing, at least one fixed magnetic element, a membrane, a movable magnetic element, and a lens. The fixed magnetic element is fixed in the casing for generating a first magnetic field. The membrane is received and retained in an upper section of the casing. The membrane defines a central hole. The movable magnetic element is attached to the membrane, surrounding the central hole of the membrane. The movable magnetic element receives a control signal and in response thereto generates a second magnetic field, which interacts with the first magnetic field of the fixed magnetic field to induce a force acting on the membrane to cause elastic deformation of the membrane. The lens is fixed to the central hole of the membrane whereby the lens is movable with respect to the casing due to the elastic deformation of the membrane caused by magnetic interaction between the first and second magnetic fields of the fixed and movable magnetic elements so as to effect focusing operation.

Abstract: A heat dissipating device includes: a plurality of conduits stacked one above the other, each of the conduits including upper and lower halves, each including a base wall with two opposite end portions and an intermediate portion, a flange that extends from the base wall and that cooperates with the base wall to define a chamber half therebetween, and two protrusions that protrude respectively and outwardly of the chamber half from the end portions of the base wall, the protrusions being formed with a through-hole and being connected respectively to the protrusions of adjacent upper and lower halves of adjacent conduits; and a plurality of heat dissipating fin units, each is disposed between and is in contact with two adjacent ones of the conduits.

Abstract: In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.

Abstract: A driving circuit uses a plurality of transformers to provide currents for driving a plurality of LEDs associated with a plurality of current paths. Each transformer has two induction coils with a coil turn ratio between to the number of turns in each induction coil. One induction coil is used to provide an output current to a different current path and the other induction coil is connected to the corresponding induction coil of other transformers for forming a current loop. The output current of each transformer has a relationship with the output current of the other transformers depending on the coil turn ratios of the connected transformers. LEDs in red, blue and green colors can be connected to different current paths so that the brightness of the LEDs in each color can be determined by the current in a current path.

Abstract: An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Abstract: A computer adapter such as a TV card includes a circuit board to be inserted in an expansion slot of the computer system; a signal transmission connector socket having a first end secured to the circuit board and a second end to be coupled to an external signal transmission connector; a securing plate securable to the computer system and the circuit board, and having a through hole for exposing the second end of the signal transmission connector socket; and an elastic metallic conductive member mounted between the signal transmission connector socket and the securing plate. The elastic metallic conductive member has a crooked cross-section in a certain direction so as to be elastically stretchable in the certain direction, thereby in contact with both of the signal transmission connector socket and the securing plate to accomplish electric connection.

Abstract: A joint includes a plurality of plates each including a first portion and a second portion for overlapping the first portion of the next one of the plates. Each of the plates may define a plurality of apertures each for receiving a fastener. Each of the plates may include a tab formed thereon for connection with an article.

Abstract: A method for preparing a transmission electron microscopy (TEM) sample for electron holography includes forming a sacrificial material over an area of interest on the sample, and polishing the sample to a desired thickness, wherein the area of interest is protected from rounding during the polishing. The sacrificial material is removed from the sample following the polishing.

Abstract: The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure.

Abstract: Disclosed is a method and structure for forming a silicide on a silicon material. The invention places the silicon material in a vacuum environment, forms metal on the silicon material, and then heats the silicon surface and the metal without breaking the vacuum environment. The processes of forming the metal and heating the silicon can be performed simultaneously without breaking the vacuum environment to form the silicide as the metal is being deposited. After the foregoing processing, the invention can remove the silicon surface from the vacuum environment and perform additional heating of the silicon surface. The first heating process forms a monosilicide and the additional heating forms a disilicide.

Abstract: A driving circuit uses a plurality of transformers to provide currents for driving a plurality of LEDs associated with a plurality of current paths. Each transformer has two induction coils with a coil turn ratio between to the number of turns in each induction coil. One induction coil is used to provide an output current to a different current path and the other induction coil is connected to the corresponding induction coil of other transformers for forming a current loop. The output current of each transformer has a relationship with the output current of the other transformers depending on the coil turn ratios of the connected transformers. LEDs in red, blue and green colors can be connected to different current paths so that the brightness of the LEDs in each color can be determined by the current in a current path.

Abstract: An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.