Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a reaction tube in which the substrate support is accommodated; a heater provided around the reaction tube; and an accommodation structure provided at a side surface of the reaction tube and configured to accommodate one or both of: a gas supply nozzle provided so as to extend from an outside of the reaction tube toward an inside of the reaction tube in a horizontal direction with respect to a surface of the substrate supported by the substrate support; and a first temperature measuring structure provided so as to extend from the outside of the reaction tube toward the inside of the reaction tube in the horizontal direction with respect to the surface of the substrate supported by the substrate support.

Abstract: According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is accommodated; a nozzle accommodation structure provided at a side surface of the reaction tube and extending in a direction parallel to a surface of the substrate; a gas supply nozzle inserted in the nozzle accommodation structure and extending from an outside of the reaction tube to an inside of the reaction tube; and a first gas supply structure through which a first gas is supplied to the gas supply nozzle.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.

Abstract: A substrate processing apparatus includes a process chamber in which one or more substrates are processed; and a substrate support configured to support the one or more substrates in the process chamber. The substrate support includes one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates, and a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion.

Abstract: Described herein is a technique capable of adjusting a balance in film thickness between surfaces of a plurality of substrates stacked in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: a process chamber capable of accommodating a plurality of substrates; a gas supplier configured to supply a process gas to the plurality of the substrates in the process chamber; a gas exhauster configured to discharge the process gas from the process chamber; and a plurality of disks interposed between the plurality of the substrates, respectively, and in vicinity of back surfaces of the plurality of the substrates.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube; a substrate retainer; a cylindrical portion provided inside the reaction tube and concentric with the reaction tube and comprising a process chamber; a gas supply part in an annular gap between the reaction tube and the cylindrical portion; a gas supply port through which the gas supply part communicates with the process chamber; a first gas exhaust port provided at the cylindrical portion, through which the gap communicates with the process chamber; an outlet connected to the reaction tube at a location lower than the first gas exhaust port and opposite to the gas supply port; and a second gas exhaust port provided at the cylindrical portion at a location lower than the first gas exhaust port and aligned with a same orientation as the outlet.

Abstract: There is provided a technique that includes a substrate processing apparatus, comprising a process chamber having a cylindrical space configured to accommodate a substrate; and a plurality of nozzles communicating with a gas supply pipe and discharging processing gas in the process chamber, the process chamber includes a cylindrical reaction tube; a cylindrical manifold; and a lid, the lid includes a protection plate; and an introduction hole, the manifold includes a protection liner on an inner face of the manifold such that a second gap is formed between the manifold and the protection liner, the first gap being formed to allow the purge gas flowing toward the manifold to be deflected by the inner face of the manifold and to flow into the second gap.

Abstract: There is provided a technique that includes a protective plate installed on a lid, including: a disc portion, of which a lower surface is in contact with an upper surface of the lid, a side wall portion extending from an outer peripheral end of the disc portion, a groove formed in the lower surface of the disc portion, and a stepped portion formed to be closer to the outer peripheral end of the disc portion than the groove, a clearance formed between the upper surface of the lid and the stepped portion, wherein the groove is configured to be able to form a flow of a gas that runs through a gap between the lid and the stepped portion, and is supplied to an outside of the side wall portion.

Abstract: There is provided a technique that includes a protective plate installed on a lid, including: a disc portion, of which a lower surface is in contact with an upper surface of the lid, a side wall portion extending from an outer peripheral end of the disc portion, a groove formed in the lower surface of the disc portion, and a stepped portion formed to be closer to the outer peripheral end of the disc portion than the groove, a clearance formed between the upper surface of the lid and the stepped portion, wherein the groove is configured to be able to form a flow of a gas that runs through a gap between the lid and the stepped portion, and is supplied to an outside of the side wall portion.

Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Abstract: There is provided a technique that includes a substrate processing apparatus, comprising a process chamber having a cylindrical space configured to accommodate a substrate; and a plurality of nozzles communicating with a gas supply pipe and discharging processing gas in the process chamber, the process chamber includes a cylindrical reaction tube; a cylindrical manifold; and a lid, the lid includes a protection plate; and an introduction hole, the manifold includes a protection liner on an inner face of the manifold such that a second gap is formed between the manifold and the protection liner, the first gap being formed to allow the purge gas flowing toward the manifold to be deflected by the inner face of the manifold and to flow into the second gap.

Abstract: A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process gas supply mechanism configured to supply a process gas; a purge gas supply unit configured to supply a purge gas to a lower region of the process vessel via a gap between the insulating structure and the lid; and a restrictor disposed in the gap. The restrictor regulates flow of the purge gas such that the flow rate of the purge gas supplied to a first portion of the lower region of the process vessel is greater than a flow rate of the purge gas supplied to a second portion of the lower region of the process vessel.