HVMOS reliability evaluation using bulk resistances as indices
A method of determining the reliability of a high-voltage PMOS (HVPMOS) device includes determining a bulk resistance of the HVPMOS device, and evaluating the reliability of the HVPMOS device based on the bulk resistance.
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This application is a divisional of U.S. patent application Ser. No. 14/959,393, entitled “HVMOS Reliability Evaluation using Bulk Resistances as Indices,” filed on Dec. 4, 2015, which is a divisional of U.S. patent application Ser. No. 13/111,730, entitled “HVMOS Reliability Evaluation using Bulk Resistances as Indices,” filed on May 19, 2011, now U.S. Pat. No. 9,209,098 issued Dec. 8, 2015, which applications are incorporated herein by reference.
BACKGROUNDIn some of the existing reliability tests of high-voltage metal-oxide-semiconductor (HVMOS) devices, a plurality of sample HVMOS devices is formed on a wafer. The sample HVMOS devices may have different structures, for example, with different sizes and dimensions. Time dependent dielectric breakdown (TDDB) tests are performed on the sample devices. Typically, the TDDB tests are performed by stressing the HVMOS devices with currents, and the tests may be performed at elevated temperatures. The tests may be performed until the sample devices fail. Accordingly, the tests are time-consuming. The TDDB test results are then analyzed to determine the reliability of the HVMOS devices.
Due to the long time needed to perform the TDDB tests, the tests are difficult to catch up with the product design cycle time. Furthermore, the existing TDDB tests do not support the establishments of design rules, and designers cannot use the results of the TDDB tests to guide the design process.
For a more complete understanding of the embodiments, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
The making and using of the embodiments of the disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative, and do not limit the scope of the disclosure.
A design rule for guiding the design of high-voltage p-type metal-oxide-semiconductor (HVPMOS) devices is provided in accordance with an embodiment. A method for quickly evaluating reliability of the HVPMOS devices is provided, wherein the reliability is related to the time dependent dielectric breakdown (TDDB) characteristics of the HVPMOS devices. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements.
In
During the operation of HVPMOS device 22, drain voltage Vd may be a high voltage, for example, 5V or higher. Source region 32 and gate electrode 30 may be applied with a low voltage such as 0V or other low voltages. In an exemplary embodiment, HVPMOS device 22 is a 5V HVPMOS device designed to be operated under drain voltage up to 5 volts without being damaged. When gate voltage Vg and source voltage Vs are 0V, with the increase in drain voltage Vd to 5V and higher, several operation stages may occur, wherein
Referring to
Referring again to
Experiments results were performed on a plurality of test structures shown in
The experiment results revealed that, contrary to the conventional understanding that spacing A does not affect the respective adjacent HVPMOS devices, active-region-to-guard-ring spacing A has a significant effect on the reliability of the respective adjacent HVPMOS devices. With the increase in active-region-to-guard-ring spacing A (as shown by an arrow in
Through experiments, it is also found that the reliability of HVPMOS devices 22 is also related to spacings B, C, G1, and G2 (
Referring back to
In
Since current gain β is directly related to the reliability of the respective HVPMOS devices, bulk resistance Rb may also be used as an indicator of the reliability of the respective HVPMOS devices. Accordingly, in accordance with embodiments, the evaluation of the reliability of HVPMOS devices includes forming the HVPMOS devices on silicon substrates, and measuring and calculating the bulk resistances Rb of the HVPMOS devices to determine the reliability of the respective HVPMOS devices. It is realized that the bulk resistance Rb may be affected by various factors such as the doping concentration of n-well region 36 in
In an example of determining reference bulk resistance Rbref, a plurality of HVPMOS devices having different spacings A may be formed on a wafer, and the current gains β of these HVPMOS devices may be measured. The spacings A of the HVPMOS devices may range from smaller than 1 μm to about 50 μm, for example, to ensure that among these HVPMOS devices, there is one reference HVPMOS device having current gain β substantially equal to 1. By measuring source currents Is and bulk currents Ib, current gains β of the HVPMOS devices may be found, and the reference HVPMOS device may be chosen. The bulk resistance of the reference HVPMOS device is measured and calculated to find reference bulk resistance Rbref.
In the embodiments, the HVPMOS devices with the bulk resistance Rb values greater than reference bulk resistance Rbref (with a reasonable margin) are determined as not reliable, while the HVPMOS devices with the bulk resistance Rb values smaller than reference bulk resistance Rbref (with a reasonable margin) may be determined as reliable. Alternatively, instead of forming the HVPMOS devices and measuring and calculating the bulk resistances Rb, simulations may be performed to find out the bulk resistances Rb of HVPMOS devices, and the reliability of the HVPMOS devices may be evaluated based on the simulated bulk resistance Rb, for example, by comparing them with reference bulk resistance Rbref, which may be simulated or measured from HVPMOS devices in physical silicon chips. Using bulk resistances Rb to evaluate the reliability of HVPMOS devices takes much less cycle time than the conventional methods of TDDB performance evaluation.
Furthermore, the evaluation of the reliability of HVPMOS devices comprises measuring spacings A, B, C, G1, and G2 (
By using the embodiments, the adverse effects of guard ring to the reliability of HVPMOS devices are substantially eliminated. Furthermore, the bulk resistance values may be used as criteria to evaluate the reliability of HVPMOS devices, hence the reliability evaluation may be performed much faster than using conventional methods.
In accordance with embodiments, a method of determining the reliability of a HVPMOS device includes determining a bulk resistance of the HVPMOS device, and evaluating the reliability of the HVPMOS device based on the bulk resistance.
In accordance with other embodiments, a method includes determining a reference bulk resistance of a reference HVPMOS device, wherein a parasitic lateral BJT of the reference HVPMOS device has a current gain equal to about 1. The lateral BJT has a source, a drain, and a well region of the reference HVPMOS device as an emitter, a collector, and a base, respectively. Bulk resistances of a plurality of HVPMOS devices on a chip are determined. The reliability of the plurality of HVPMOS devices are determined by comparing the bulk resistances with the reference bulk resistance.
In accordance with yet other embodiments, a device includes a semiconductor chip, wherein all HVPMOS devices in the semiconductor chip and including adjacent guard rings have active-region-to-guard-ring spacings smaller than about 2 μm. The active-region-to-guard-ring spacings are distances between outer edges of active regions of the respective HVPMOS devices and corresponding nearest n-type guard rings. The active-region-to-guard-ring spacings are measured in channel width directions of the respective HVPMOS devices.
Although the embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the embodiments as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. In addition, each claim constitutes a separate embodiment, and the combination of various claims and embodiments are within the scope of the disclosure.
Claims
1. A structure comprising:
- a semiconductor substrate;
- a plurality of High-Voltage P-type Metal-Oxide-Semiconductor (HVPMOS) devices formed at a surface of the semiconductor substrate, wherein the plurality of HVPMOS devices form an array comprising a plurality of rows and a plurality of columns; and
- an n-type guard ring comprising a plurality of portions, each encircling one of the plurality of HVPMOS devices, with neighboring ones of the plurality of HVPMOS devices separated from each other by the n-type guard ring.
2. The structure of claim 1 further comprising a plurality of isolation regions separated from each other by the n-type guard ring, and each of the plurality of HVPMOS devices comprises an active region encircled by one of the plurality of isolation regions.
3. The structure of claim 2, wherein the plurality of isolation regions comprise an isolation region encircled by one of the plurality of portions, with no High-Voltage N-type Metal-Oxide-Semiconductor (HVNMOS) having any active region that is also encircled by the isolation region.
4. The structure of claim 3, wherein each of the plurality of portions encircles an active region of a single HVPMOS device, and no active region of any additional MOS device is encircled by any of the plurality of isolation regions.
5. The structure of claim 2, wherein the active region of the each of the plurality of HVPMOS devices has an active-region-to-guard-ring spacing smaller than about 2 μm, and the active-region-to-guard-ring spacing is between the active region and a nearest portion of the n-type guard ring.
6. The structure of claim 1, wherein a region encircled by the n-type guard ring has a length and a width smaller than the length, with the width being smaller than about 30 μm.
7. The structure of claim 6, wherein the width is measured in a direction perpendicular to lengthwise directions of active regions of the plurality of HVPMOS devices.
8. The structure of claim 1 further comprising a High-Voltage N-type Metal-Oxide-Semiconductor (HVNMOS) device encircled by an additional guard ring, wherein the HVNMOS device has an additional active-region-to-guard-ring spacing greater than 2 μm.
9. The structure of claim 8, wherein the HVNMOS device comprises an active region encircled by an additional isolation region, and no addition MOS device has any active region encircled by the additional isolation region.
10. The structure of claim 1, wherein the n-type guard-ring comprises a portion of the semiconductor substrate that are heavily doped as n-type.
11. A structure comprising:
- a semiconductor substrate;
- a heavily doped semiconductor region extending into the semiconductor substrate wherein the heavily doped semiconductor region forms a guard ring;
- a plurality of isolation regions extending into the semiconductor substrate and forming an array, wherein each of the plurality of isolation regions is separated from other ones of the plurality of isolation regions by the heavily doped semiconductor region;
- a plurality of active regions, each encircled by one of the plurality of isolation regions, wherein the plurality of active regions have active-region-to-guard-ring spacings smaller than about 2 pm; and
- a plurality of High-Voltage P-type Metal-Oxide-Semiconductor (HVPMOS) devices formed based on the plurality of active regions.
12. The structure of claim 11, wherein each of the plurality of isolation regions encircles a single active region.
13. The structure of claim 11, wherein the heavily doped semiconductor region forms a plurality of rings that are interconnected with each other, and inside each of the plurality of rings, a single one of the plurality of HVPMOS devices is formed.
14. The structure of claim 11, wherein each of the plurality of isolation regions has a length and a width smaller than the length, with the width being smaller than about 30 μm.
15. The structure of claim 11 further comprising a High-Voltage N-type Metal-Oxide-Semiconductor (HVNMOS) device encircled by an additional heavily doped semiconductor region, wherein the HVNMOS device has an additional active-region-to-guard-ring spacing greater than 2 μm.
16. The structure of claim 11, wherein the heavily doped semiconductor region has an n-type impurity concentration higher than about 1×1019/cm3.
17. A structure comprising:
- a semiconductor substrate;
- a heavily doped semiconductor region extending into the semiconductor substrate, wherein the heavily doped semiconductor region is of n-type;
- a plurality of Shallow Trench Isolation (STI) regions extending into the semiconductor substrate and forming an array, wherein each of the plurality of STI regions is separated from other ones of the plurality of STI regions by the heavily doped semiconductor region;
- a plurality of active regions, each encircled by one of the plurality of STI regions, wherein each of the plurality of STI regions has a rectangular top-view shape, and has a length and a width smaller than the length, with the width being smaller than about 30 μm; and
- a plurality of High-Voltage P-type Metal-Oxide-Semiconductor (HVPMOS) devices, each being formed based on one of the plurality of active regions.
18. The structure of claim 17, wherein each of the plurality of STI regions encircles a single active region.
19. The structure of claim 17, wherein the heavily doped semiconductor region forms a plurality of rings that are interconnected with each other to form a continuous semiconductor region, and inside each of the plurality of rings, a single one of the plurality of HVPMOS devices is formed.
20. The structure of claim 17, wherein the heavily doped semiconductor region has an n-type impurity concentration higher than about 1×1019/cm3.
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Type: Grant
Filed: Jun 1, 2018
Date of Patent: Dec 10, 2019
Patent Publication Number: 20180277539
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu)
Inventors: Chi-Feng Huang (Zhubei), Chia-Chung Chen (Keelung), Tse-Hua Lu (Zhubei)
Primary Examiner: Sue A Purvis
Assistant Examiner: Jordan M Klein
Application Number: 15/995,778
International Classification: H01L 29/06 (20060101); H01L 27/092 (20060101); H01L 21/66 (20060101); H01L 27/02 (20060101); G01R 27/08 (20060101); G01R 31/02 (20060101); H01L 29/78 (20060101); H01L 29/10 (20060101);