WIREBOND-LESS SEMICONDUCTOR PACKAGE
A wirebond-less packaged semiconductor device includes a plurality of I/O contacts, at least one semiconductor die, the semiconductor die having a bottom major surface and a top major surface, the top major surface having at least two electrically isolated electrodes, and a conductive clip system disposed over the top major surface, the clip system comprising at least two electrically isolated sections coupling the electrodes to respective I/O contacts.
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The present invention relates to packages for single or multiple semiconductor devices and in particular to packages that require very low electrical and/or thermal resistance, inductance and cost.
BACKGROUND OF THE INVENTIONIt is conventional in the electronic industry to encapsulate one or more semiconductor devices in a semiconductor package. These plastic packages protect a chip from environmental hazards and handling hazards and provide a method for electrically and mechanically attaching the chip to an intended device. The demands on the package design include the ability to conduct high currents without self heating, low electrical and thermal resistances, high reliability under extreme power conditions and low parasitic inductances.
Various approaches to packaging semiconductor devices have been documented in the literature as well as commercialized in order to address these design requirements. In one such design, the contact between the backside of the packaged die to the external world is made through an attachment to a highly electrically conductive leadframe using low thermal/electrical resistance solder or epoxy. Some solutions leave the backside of the die exposed.
The topside pad of the silicon die is connected to the I/O pads of the package. This is a critical part of the package design since all the current and an important percentage of the heat flux has to be conducted through it. The industry uses a variety of solutions for this, including copper strap designs, ball wirebond and ribbon wirebond designs, and copper clip designs.
Each of these designs requires at least one or more wirebonds that at least connect one or more the device terminals to an I/O of the leadframe. Wirebond reliability is a major concern with these packages. The mismatch of coefficient of thermal expansion (CTE) between materials used inside the package causes thermal cycling that provides stresses and small deformations in the wirebonds. These cycling deformations create stress and deformations as a result of the joint fatigue and can lead to wirebond failure.
Further, the bondability of wires to the pads after the reflow of the clip is also a very important issue. In most cases, the flux present in the solder paste used to attach the clip to the semiconductor chip contaminates the pads to which the wires are to be bonded. This contamination requires special chemicals for removal and still is not easily removed. The cleaning process can involve several steps, including wet cleaning, plasma cleaning and/or UV ozone cleaning, that directly impact manufacturing costs and processing time.
Further, the use of wirebonds is limited to contacts that do not require low resistance or that conduct low currents. If this is not the case, then multiple wirebonds are needed per electrical connection, which also increases cost as well as reduces reliability. There is also an intrinsic limitation on the number of wires that can be bonded to a fixed area pad, which is determined by the capabilities of the wirebond tool.
In designs where the wirebond constitutes part of the impedance matching circuit, repeatability is a major issue. Also, wirebonds can be deformed or damaged during the manufacturing process. Wirebond solutions are not, therefore, as robust as desired and the wire profiles require constant quality checks.
Still further, wirebonds between semiconductor pads and package I/Os can result in capacitively and/or inductively coupled branches, thereby reducing electrical isolation, increasing cross talk, increased noise and instability and, in general, reducing performance under high current and high frequency operation.
There remains a need for a packaging solution that reduces device architecture and process complexity and that can be easily implemented (scaled or modified) for different semiconductor die designs or multiple die assemblies (multichip modules) without significant changes or modifications to the packaging process and machinery, and also a need to do so with very low parasitic resistance, inductance and/or thermal resistance. Still further, there remains a need for such a solution that does not utilize wirebonds.
SUMMARY OF THE INVENTIONA wirebond-less packaged semiconductor device includes a plurality of I/O contacts, at least one semiconductor die, the die having a bottom major surface and a top major surface, the top major surface having at least two electrically isolated electrodes, and a conductive clip system disposed over the top major surface, the clip system comprising at least two electrically isolated sections coupling the electrodes to respective I/O contacts.
The above and other features of the present invention will be better understood from the following detailed description of the preferred embodiments of the invention that is provided in connection with the accompanying drawings.
The accompanying drawings illustrate preferred embodiments of the invention, as well as other information pertinent to the disclosure, in which:
This description of the exemplary embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. In the description, relative terms such as “lower,” “upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description and do not require that the apparatus be constructed or operated in a particular orientation.
In one embodiment, the body of clip 100 forms at least main sections 104, 106 and 109. Section 106 includes downwardly depending connection leg 108a. Section 106 corresponds to (i.e., is positioned and shaped to make contact with) a first electrode from the semiconductor die, described below. Section 104 is coupled to downwardly depending connection leg 108b and corresponds to a second electrode from the semiconductor die. Finally, the third section 109 is designed to temporarily connect sections 104 and 106. Third section 109 is designed to protrude so that it can be cut or severed from a packaged product in order to electrically isolate sections 104 and 106, as described below in more detail.
As described below, the major surfaces 208, 210 are physically and electrically coupled to clip 100 and a leadframe (described below) using solder bumps (not shown) and/or a layer of conductive adhesive (collectively, “layer of conductive material”), such as PbSn solder paste or conductive silver epoxy. When die 200 is coupled to the clip 100, gate electrode 202 aligns with a portion of section 104 of the clip 100 and source electrode 204 aligns with a portion of section 106 of the clip 100. In this manner, gate electrode 202 is electrically coupled to contact leg 108b of section 104 and source electrode 204 is electrically coupled to contact leg 108a of section 106.
Leadframe 300 is formed from a single sheet of conductive material, preferably copper (Cu) or a copper alloy, such as one containing small amounts of Fe, (e.g., CDA194 or the like), electroplated or otherwise coated with a layer of solderable (and preferably corrosion resistant or corrosion minimizing (collectively, “resistant”)) conductive material such as tin, gold, tin lead, silver or other solderable material. The CDA 194 copper alloy provides excellent strength, electric conductivity and thermal conductivity, and is used widely as an international standard copper alloy. The CDA194 alloy contains 2.1 to 2.8% by mass Fe, 0.015 to 0.15% P, and 0.05 to 0.20% Zn. While the top surface 302 of the leadframe 300 is planar, the bottom surface 304 has recessed region(s) designated generally at 306. The recessed region(s) 306 is preferably etched into the bottom surface 304 of the leadframe 300 to form planar I/O lead contacts 308 (shown as I/O lead contacts 308a, 308b, 308c, 308d). These contacts can be seen in phantom in
Leadframe 300 includes sections that are electrically isolated from each other (once singulated from the master leadframe (not shown)). The top surface of main body section 310 aligns and couples to the drain electrode 206 of bottom major surface 210 of the semiconductor die 200. The top surface of second section 312 aligns with contact leg 108a of the clip 100, thereby making electrical contact to the source electrode 204. Finally, the top surface of third section 314 aligns with contact leg 108b, thereby making electrical contact to the gate electrode 202 of the semiconductor die 200.
Turning now to
Phantom line 402 shows the boundaries of the packaged device once overmolded with an encapsulating material. Lines 402 identify cut lines from where an individual packaged semiconductor device is singulated from a group of devices that are overmolded with an encapsulating material in the same process, as will be understood by those in the art. As can be seen from
Though not shown in
Though it is preferred that the sections 104 and 106 of clip 100 are separated from one other by severing section 109 (at least partially) from clip 100 (
As with
This packaging technique is especially effective in improving device performance in devices with high lateral current flow, such as with power LDMOS devices. The elimination of wirebonds allows for equal clip area to be assigned for current flow to each of the top electrodes.
As with
The leadframe 1900 includes one or more protruding connecting sections 1910ac and 1910ab. As shown in
The electrode 1802 of die 1800 is coupled to the bottom surface of clip 1700 by a layer of conductive adhesive 2106 and/or solder bumps, thereby connecting the electrode 1802 to contact pad 1908c through leg 1706. As with the assemblies described above, the contact leg 1706 may also be coupled to the leadframe 1900 by the layer of conductive adhesive 2104. The bottom electrodes 1804 and 1806 of the die 1800 are coupled to the top surface 1902 of the leadframe 1900, specifically to sections 1906c and 1906a, respectively, of the leadframe 1900 by conductive adhesive layer 2104, thereby coupling the electrodes 1804 and 1806 to the bottom contact pads 1908b and 1908a, respectively.
As with
While
From the foregoing, a packaging method is provided that is low cost and production friendly. The package itself lacks the complexity of prior art packages, providing a robust package and cost savings. Further, the clip is easily configured to any number of die sizes and electrode configurations. The process and package, therefore, are easily scalable to different I/O and die configurations, providing consequent reductions in development costs and time as well as implementation times for new designs.
In embodiments where all electrical connections are made to the I/O contacts directly from the die to the leadframe or from the clip to the leadframe without wirebonds, there are no wirebond reliability or failure concerns or impedance matching design issues. The repeatability of the electrical connection (e.g., inductance, resistance and capacitance) helps to improve the repeatability of the impedance matching circuit. Electromagnetic coupling between electrodes is also reduced. Parasitic inductances are lower and more repeatable. Further, there is no need for a cleaning procedure before wirebonding, resulting in a simplified process flow and both time and cost savings. Still further, in embodiments, the top metallization layer of the die need only comprise a surface that is solderable and not one that is also wirebondable.
Device performance is also improved, since use of a Cu clip has lower resistance than wirebonds, and thus can conduct more current in high performance devices, replacing the need for not only a wirebond but for multiple wirebonds for carrying the high current.
Still further, the packaging scheme is also multi-chip module (MCM) capable, i.e., the package is easily adapted to providing two or more dies per packaged device. For example, more than one power transistor device can be provided per packaged device. The only modifications that are needed to accommodate this MCM design is to the shape of the clip and leadframe. Such modifications are within the skill of those in the art.
Though not limited thereto, the design described herein is particularly suited to high frequency power LDMOS devices, such as power RF devices. Although the packaged device has been described above principally in connection with a semiconductor die having a bottom drain electrode with isolated gate and source electrodes on an opposite side thereof, the package and packaging method described above are also applicable to other die configurations, such as where the top surface of the die coupled to the clip is configured to have (i) FET drain and gate only, (ii) FET gate, drain and source, (iii) BJT base and emitter only, (iv) BJT base and collector only, (v) BJT base, collector and emitter, (vi) multiple I/O of an integrated circuit, or (vii) anode and cathode of a diode. The bottom exposed surface can be the (i) FET source only, (ii) FET drain only, (iii) BJT emitter only, (iv) BJT collector only, (v) multiple I/O of an integrated circuit, or finally (vi) no electrode at all, i.e., just bare semiconductor substrate material or metallized semiconductor substrate material
Although the invention has been described in terms of exemplary embodiments, it is not limited thereto. Rather, the appended claims should be construed broadly to include other variants and embodiments of the invention that may be made by those skilled in the art without departing from the scope and range of equivalents of the invention.
Claims
1. A wirebond-less packaged semiconductor device comprising:
- a plurality of I/O contacts;
- at least one semiconductor die, said semiconductor die having a bottom major surface and a top major surface, said top major surface having at least two electrically isolated electrodes; and
- a conductive clip system disposed over said top major surface, said clip system comprising at least two electrically isolated sections coupling said electrodes to respective I/O contacts.
2. The semiconductor device of claim 1, further comprising an encapsulating layer, said encapsulating layer at least partially enclosing said die and clip system with said I/O contacts exposed therethrough.
3. The device of claim 2, wherein a top surface of at least a portion of said conductive clip system is exposed through said encapsulating layer.
4. The semiconductor device of claim 1, further comprising a conductive leadframe disposed under said die, said conductive leadframe comprising said plurality of I/O contacts.
5. The device of claim 4, wherein said bottom major surface of said semiconductor die is coupled to said leadframe with a first layer of conductive material, and wherein said top major surface of said semiconductor die is coupled to said clip system with a second layer of conductive material.
6. The device of claim 1, wherein said semiconductor die comprises a power MOSFET device.
7. The device of claim 4, wherein said top major surface of said die comprises a gate electrode and a source electrode and wherein said bottom major surface of said die comprises a drain electrode.
8. The device of claim 4, wherein said top major surface of said die comprises a gate electrode and drain electrode and wherein said bottom major surface of said die comprises a source electrode.
9. The device of claim 1, wherein said semiconductor die comprises a high-frequency power LDMOS device.
10. A wirebond-less packaged semiconductor device comprising:
- a conductive leadframe defining a plurality of electrical I/O pads;
- at least one semiconductor die, said semiconductor die having a bottom major surface with at least one electrode coupled to at least one of said electrical I/O pads, said at least one semiconductor die further comprising a top major surface having at least two electrically isolated electrodes;
- a conductive clip system, said clip system comprising at least two electrically isolated portions coupling said at least two electrically isolated electrodes to respective electrical I/O pads of said leadframe; and
- an encapsulating layer, said encapsulating layer at least partially enclosing said leadframe, die and clip system with said I/O pads exposed therethrough.
11. The device of claim 10, wherein said bottom major surface of said semiconductor die is coupled to said leadframe with a first layer of conductive material, and wherein said top major surface of said semiconductor die is coupled to said clip system with a second layer of conductive material.
12. The device of claim 10, wherein said semiconductor die comprises a power MOSFET device.
13. The device of claim 12, wherein (i) said top major surface of said die comprises a gate electrode and a source electrode and wherein said bottom major surface of said die comprises a drain electrode, or (ii) said top major surface of said die comprises a gate electrode and a drain electrode and wherein said bottom major surface of said die comprises a source electrode.
14. The device of claim 10, wherein said semiconductor die comprises a high frequency power LDMOS device.
15. A method of forming a wirebond-less packaged semiconductor device comprising:
- providing a conductive leadframe defining a plurality of electrical I/O pads;
- providing at least one semiconductor die, said die having a bottom major surface with at least one electrode and a top major surface having at least two electrically isolated electrodes;
- coupling said at least one electrode from said bottom surface of said semiconductor die to at least one of said electrical I/O pads;
- providing a conductive clip system, said clip system comprising at least two electrically isolated portions;
- coupling said at least two electrically isolated electrodes from said top major surface to respective electrical I/O pads of said leadframe with said at least two electrically isolated portions of said clip system; and
- at least partially encapsulating said leadframe, die and clip system within an encapsulating layer with said I/O pads exposed therethrough.
16. The method of claim 15, wherein said conductive clip system is initially provided with said electrically isolated portions electrically connected together, the method further comprising the step of cutting a section of said clip system connecting said isolated portion, thereby electrically isolating said portions.
17. The method of claim 15, wherein said cutting step occurs after said encapsulating step.
18. The method of claim 17, wherein said cutting step comprises sawing through said section of said clip system.
19. The method of claim 16, wherein said bottom major surface of said semiconductor die is coupled to said leadframe with a first layer of conductive material, and wherein said top major surface of said semiconductor die is coupled to said clip system with a second layer of conductive material.
20. The method of claim 16, wherein said semiconductor die comprises a power MOSFET device.
21. The method of claim 20, wherein (i) said top major surface of said die comprises a gate electrode and a source electrode and wherein said bottom major surface of said die comprises a drain electrode, or (ii) said top major surface of said die comprises a gate electrode and a drain electrode and wherein said bottom major surface of said die comprises a source electrode.
22. The method of claim 16, wherein said semiconductor die comprises a power LDMOS device.
23. The method of claim 17, wherein said cutting step comprising breaking off or snapping off a section of said clip system to isolate said portions.
24. The method of claim 23, wherein said clip system comprises a pre-weakened region for permitting directed breaking or snapping off.
25. The method of claim 15,
- wherein said leadframe is provided in a matrix of individual leadframes,
- wherein said conductive clip system is provided in a matrix of individual conductive clip systems, and
- wherein said providing said at least one semiconductor die step comprises providing a plurality of semiconductor dies between said matrix of individual leadframes and said matrix of conductive clip systems, said method further comprising,
- the method further comprising, after said encapsulating step, the step of cutting said matrixes to form individual packaged semiconductor devices.
26. A wirebond-less packaged semiconductor device comprising:
- a conductive leadframe system defining a plurality of electrical I/O contacts;
- a semiconductor die, said semiconductor die having a bottom major surface with a plurality of electrically isolated electrodes coupled to respective ones of said electrical I/O pads, said semiconductor die further comprising a top major surface having at least one electrode;
- a conductive clip system disposed over said top surface of said die, said clip system comprising a main body portion coupled to said top surface electrode and comprising a downwardly depending leg portion coupling said main body portion to at one of said I/O contacts of said leadframe; and
- an encapsulating layer, said encapsulating layer at least partially enclosing said leadframe system, die and clip system with said I/O contacts exposed therethrough.
Type: Application
Filed: Aug 14, 2006
Publication Date: Feb 14, 2008
Applicant: Ciclon Semiconductor Device Corp. (Bethlehem, PA)
Inventors: Juan Alejandro Herbsommer (Schnecksville, PA), George J. Przybylek (South Plainfield, NJ), Osvaldo J. Lopez (Annandale, NJ)
Application Number: 11/464,333
International Classification: H01L 23/34 (20060101); H01L 21/00 (20060101);