SEMICONDUCTOR DEVICE PACKAGE
A semiconductor device package includes a semiconductor device mounted to a substrate, a wall erected around the semiconductor device with a height taller than the height of the semiconductor device, at least one metal member provided in the wall or against the wall; and a lid secured to the metal member. The metal member and the lid enclose substantially the semiconductor device for providing electromagnetic interference shielding.
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This application is a divisional of, and claims priority to, U.S. patent application Ser. No. 10/944,198, filed Sep. 20, 2004, the contents of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION1. Field of the Invention
This invention relates to semiconductor device packages, and more specifically to semiconductor device packages which are shielded to protect against electromagnetic interference (EMI).
2. Description of the Related Art
Semiconductor device packages typically have electrical circuitry implemented on a circuit substrate, such as a printed circuit board or a ceramic substrate. The performance of the circuitry may be adversely affected by electromagnetic interference (EMI). Electromagnetic interference (EMI) is the generation of undesired electrical signals, or noise, in electronic system circuitry due to the unintentional coupling of impinging electromagnetic field energy.
The coupling of signal energy from an active signal net onto another signal net is referred to as crosstalk. Crosstalk is within-system EMI, as opposed to EMI from a distant source. Crosstalk is proportional to the length of the net parallelism and the characteristic impedance level, and inversely proportional to the spacing between signal nets.
Electronic systems are becoming smaller, and the density of electrical components in these systems is increasing. As a result, the dimensions of the average circuit element is decreasing, favoring the radiation of higher and higher frequency signals. At the same time, the operating frequency of these electrical systems is increasing, further favoring the incidence of high frequency EMI. EMI can come from electrical systems distant from a sensitive receiving circuit, or the source of the noise can come from a circuit within the same system (crosstalk or near source radiated emission coupling). The additive effect of all these sources of noise is to degrade the performance, or to induce errors in sensitive systems.
SUMMARY OF THE INVENTIONIt is therefore an object of the present invention to provide semiconductor device packages which are shielded to protect against electromagnetic interference (EMI).
To achieve the above listed and other objects, a semiconductor device package having features of the present invention generally includes a semiconductor device mounted to a substrate, a wall erected around the semiconductor device with a height taller than the height of the semiconductor device, at least one metal member provided in the wall or against the wall; and a lid secured to the metal member. Note that the metal member and the lid enclose substantially the semiconductor device for providing electromagnetic interference shielding. Preferably, the wall is integrally formed with the substrate.
In accordance with the present invention, there is provided another semiconductor device package includes a semiconductor device mounted to a substrate having at least one metal member provided therein and a metal cover secured to the metal member thereby enclosing substantially the semiconductor device for providing electromagnetic interference shielding.
In accordance with the present invention, there is provided another semiconductor device package includes a semiconductor device mounted to a substrate and a metal cover secured to the substrate for providing electromagnetic interference shielding. Specifically, the metal cover has a base portion and a side wall extending from the base portion, and the size of the side wall is slightly larger than the size of a top portion of the substrate to enable the top portion of the substrate to be received within the metal cover. The side wall of the metal cover abuts the bottom portion of the substrate when the top portion of the substrate is received within the metal cover.
In accordance with the present invention, the lid may be a metal plate or a film with a conductive coating thereon. The metal member may be a metal ring or four metal bars arranged around the semiconductor device. Preferably, the metal member is connected to ground potential. The substrate may be an organic substrate or a ceramic substrate.
These and other features, aspects, and advantages of the present invention will be more fully understood by reading the following detailed description of the preferred embodiment, with reference made to the accompanying drawings as follows:
Referring to
The substrate 120 may be an organic substrate formed from a core layer made of fiberglass reinforced BT (bismaleimide-triazine) resin or FR-4 fiberglas reinforced epoxy resin. Alternatively, the substrate 120 may be a multi-layer ceramic substrate. Preferably, the substrate 120 and the wall 130 are integrally formed by a LTCC (Low Temperature Cofired Ceramic) manufacturing process.
Alternatively, as shown in
Alternatively, as shown in
Preferably, the metal member 140 shown in
Note that the metal member 140 shown in
Although the invention has been explained in relation to its preferred embodiments, it is to be understood that many other possible modifications and variations can be made without departing from the spirit and scope of the invention as hereinafter claimed.
Claims
1. A semiconductor device package comprising:
- a substrate; a semiconductor device mounted to the substrate and electrically coupled to the substrate;
- at least one metal member provided in the substrate; and
- a metal cover secured to the metal member thereby enclosing substantially the semiconductor device for providing electromagnetic interference shielding.
2. The semiconductor device package as claimed in claim 1, wherein the metal member extends from an upper surface to a lower surface of the substrate.
3. The semiconductor device package as claimed in claim 1, wherein the metal member is connected to ground potential.
4. The semiconductor device package as claimed in claim 1, wherein the metal member is a metal ring.
5. The semiconductor device package as claimed in claim 1, wherein the metal member comprises a plurality of metal bars arranged around the semiconductor device.
6. The semiconductor device package as claimed in claim 1, wherein the substrate is an organic substrate or a ceramic substrate.
7. The semiconductor device package as claimed in claim 1, the metal cover is secured to the metal member by a soldering interface.
8. The semiconductor device package as claimed in claim 1, wherein the metal cover has a top portion and a side wall extending from the top portion, and the top portion of the metal cover comprises a solder layer or a black-oxidation layer formed thereon.
9. A semiconductor device package comprising:
- a substrate having a top portion and a bottom portion; and
- a semiconductor device mounted to the top portion of the substrate and electrically coupled to the substrate; and
- a metal cover having a base portion and a side wall extending from the base portion, the metal cover being secured to the substrate for providing electromagnetic interference shielding,
- wherein the size of the side wall is slightly larger than the size of the top portion of the substrate to enable the top portion of the substrate to be received within the metal cover, and the side wall of the metal cover abuts the bottom portion of the substrate when the top portion of the substrate is received within the metal cover.
10. The semiconductor device package as claimed in claim 9, wherein the substrate is an organic substrate or a ceramic substrate.
11. The semiconductor device package as claimed in claim 9, further comprising a solder layer or a black-oxidation layer formed on the base portion of the metal cover.
Type: Application
Filed: Dec 7, 2007
Publication Date: Jun 26, 2008
Applicant: Advanced Semiconductor Engineering, Inc. (Taiwan)
Inventors: JunYoung Yang (Paju-Si), KiDon Kim (Paju-Si), JongHo Han (Paju-Si), JunHong Lee (Paju-Si)
Application Number: 11/952,480
International Classification: H01L 23/552 (20060101);