Voltage Controlled Static Random Access Memory
A static random access memory (SRAM) comprising a plurality of SRAM cells, a plurality of wordlines (WL0-WLN) and a voltage regulator for driving the wordlines with a wordline voltage signal (VWLP). The wordline voltage signal is determined so as to reduce the likelihood of occurrence of read-disturbances and other memory instabilities. In one embodiment, the wordline voltage signal is determined as a function of the metastability voltage (VMETA) of the SRAM cells and an adjusted most positive down level voltage (VAMPDL) that is a function of a predetermined voltage margin (VM) and a most positive down level voltage (VMPDL) that corresponds to the read-disturb voltage of the SRAM cells.
Latest IBM Patents:
This application is a continuation of U.S. patent application Ser. No. 11/926,689, filed Oct. 29, 2007, and titled “Voltage Controlled Static Random Access Memory,” which is a continuation of U.S. Pat. No. 7,352,609 issued Apr. 1, 2008, and titled “Voltage Controlled Static Random Access Memory.” Each of these applications is incorporated herein by referenced in its entirety. This application is also related to U.S. Pat. No. 7,466,582, issued Dec. 16, 2008, and titled “Voltage Controlled Static Random Access Memory,” and U.S. Pat. No. 7,486,586, issued Feb. 3, 2009.
FIELD OF THE INVENTIONThe present invention generally relates to the field of integrated circuits. More particularly, the present invention is directed to a voltage controlled static random access memory.
BACKGROUND OF THE INVENTIONStatic random access memory (SRAM) is a common type of random access memory used aboard integrated circuit chips. SRAM is used in many applications, including cache memory for general purpose microprocessors, on-board memory for system-on-chip devices and on-board memory for application specific integrated circuits, among others. For many years the design of individual SRAM cells, e.g., four device and six device cells, has included the concept of designing the output device(s) and pull-down device(s) within each cell so that they satisfy a predetermined beta ratio constraint. As is well known in the art, for a transistor β=γ(W/L), where γ is the transconductance and W and L are, respectively, the width and length of the transistor channel. Conventionally, SRAM designers strive to keep the ratio between the β value of each output device and the β value of the corresponding pull-down device, i.e., beta ratio, between about 1.5 and about 2.0. Experience with SRAM made using current- and previous-generation integration scales and operating voltages has shown that limiting the beta ratio in this manner generally results in stable SRAM cell, i.e., an SRAM cell that is resistant to read disturbances and other types of instability.
Generally, satisfying the beta ratio constraint when designing SRAM cells made using current- and previous-generation integration scales has been sufficient. This is so because the geometric tracking between transistors within SRAM cells has been adequate, specifically, the widths and lengths of the diffusion source/drain regions have been adequately matched to provide good electrical stability and Vdd has been high enough (typically 1.5V or more) to provide sufficient overdrive to compensate for minor geometrical imbalances. However, in the next generation and follow-on generations of integration scale and operating voltages, future SRAM will generally be less tolerant to manufacturing limitations that tend to cause read disturbances and other instabilities.
This is particularly true at the present time when conventional photolithography techniques are being stretched to their limits in order to produce ever smaller feature sizes. For example,
In contrast,
Due to the various manufacturing limitations, as-manufactured devices, such as as-manufactured devices 10′, 14′ of
Compounding the larger magnitudes and variability of β-value deviations is the fact that SRAM operating voltages will continue to decrease with increasing integration scale and corresponding decreasing feature sizes. As mentioned above, in conventional SRAM, the SRAM driving voltages are typically 1.5V and greater, and the corresponding transistor threshold voltage (Vt) is on the order of 300 mV. Consequently, there is much headroom for overdriving conventional devices with a 1.5V Vdd in order to overcome deviations in the as-manufactured β values resulting from manufacturing limitations. However, in the next generation of SRAM, operating voltages will likely be on the order of 1 V or less and the threshold voltage will likely be on the order of, e.g., 200 mV, leaving much less headroom for providing device overdrive. Consequently, what is needed is SRAM having stability that is relatively highly predictable regardless of feature size, technology used to manufacture the SRAM and operating voltage.
SUMMARY OF THE INVENTIONIn one implementation, the present disclosure is directed to an integrated circuit. The integrated circuit includes, comprising: a static random access memory (SRAM) powered by an SRAM voltage signal having a first voltage, the SRAM including a plurality of wordlines; and at least one wordline voltage regulator operatively configured to drive the plurality of wordlines with a wordline voltage signal having a second voltage lower than the first voltage; wherein: the at least one voltage regulator includes a metastability voltage generator; and the SRAM includes a plurality of SRAM cells each having a pair of internal voltage nodes and the metastability voltage generator comprises one of the plurality of SRAM cells having the pair of internal voltage nodes electrically coupled to one another.
In another implementation, the present disclosure is directed to an integrated circuit. The integrated circuit includes: a static random access memory (SRAM) powered by an SRAM voltage signal having a first voltage, the SRAM including a plurality of wordlines; and at least one wordline voltage regulator operatively configured to drive the plurality of wordlines with a wordline voltage signal having a second voltage lower than the first voltage; wherein the SRAM includes a plurality of SRAM cells each having a most positive down level voltage that is a function of the second voltage, the at least one voltage regulator operatively configured to generate the second voltage as a function of the most positive down level voltage.
In still another implementation, the present disclosure is directed to an integrated circuit. The integrated circuit includes: a static random access memory (SRAM) powered by an SRAM voltage signal having a first voltage, the SRAM including a plurality of wordlines; and at least one wordline voltage regulator operatively configured to drive the plurality of wordlines with a wordline voltage signal having a second voltage lower than the first voltage; wherein the SRAM includes a plurality of SRAM cells each having a metastability voltage and a most positive down level voltage that is a function of the second voltage, the voltage regulator operatively configured to generate the second voltage as a function of the metastability voltage and the most positive down level voltage.
In yet another implementation, the present disclosure is directed to a method of powering a static random access memory (SRAM) that includes a plurality of SRAM cells and a plurality of wordlines. The method includes: generating a metastability voltage; generating a read-disturb voltage; generating a wordline voltage as a function of the metastability voltage and the read-disturb voltage; and driving the plurality of wordlines with the wordline voltage.
For the purpose of illustrating the invention, the drawings show a form of the invention that is presently preferred. However, it should be understood that the present invention is not limited to the precise arrangements and instrumentalities shown in the drawings, wherein:
Referring now to the drawings,
Preferably, but not necessarily, each pair 236A-B of I/O transistor (220C, 220T) and corresponding pull-down transistor (224C-D) is designed so as to minimize the impact that the limitations of the manufacturing techniques may have on the operating characteristic of the as-manufactured SRAM cells. For example, each pair 236A-B of corresponding respective I/O transistors 220C, 220T and pull-down transistors 224C-D may have as-designed diffusion regions (not shown) having identical width W and length L dimensions, as illustrated in
As discussed in detail in the Background section above, conventional SRAM designs rely on satisfying a constraint on the ratio of the β values of I/O devices (transistors) and corresponding respective pull-down devices (transistors) to inhibit cell instabilities, such as read disturbances. However, as also discussed in the Background section, the sheer smallness of the devices coupled with limitations of manufacturing techniques and reduced wordline voltages (typically Vdd) will likely make the conventional beta ratio constraint obsolete in terms of its ability to predict the stability of as-manufactured memory cells of next- and future-generation SRAM.
Consequently, SRAM 200 of
Generally, metastability voltage generator 316 of
Referring again to
Generally, read-disturb voltage generator 328 of
Read-disturb voltage generator 328 may also include a current source 340 coupled across a resistor 344 from one-half SRAM cell 332. In the present example, the resistance of resistor 344 is 100 kΩ. Current source 340 may be used to generate a voltage offset, or voltage margin VM, that is added to a most positive down level voltage VMPDL, which represents the read-disturb voltage of an actual SRAM cell, again in this case SRAM cell 204 of
It is recognized that injecting current through resistor 344 using current source 340 impacts the value of most positive down level voltage VMPDL. However, based on present designs the level of disturbance of most positive down level voltage VMPDL using this technique is generally insignificant relative to the performance of the voltage regulator 300 (
Referring again to
Voltage calculator 352 may comprise first and second operational amplifiers (op-amps) 356A-B and first and second gain stages 360A-B. First op-amp 356A and first gain stage 360A output a target voltage TARGET, which is an average of metastability voltage VMETA from metastability voltage generator 316 of
Referring to
As an example, the various voltages generated and output by voltage regulator 300 (
First and second pFETs 412, 416 are switched by read signal READ. However, the input to gate 420 of second pFET 416 includes an inverter 424 that flips the state of read signal READ. Consequently, when any wordline WL0-WLN is placed into a read state when a read instability becomes an issue such that read signal READ is activated, de-multiplexer 408 provides each wordline buffer 428 with voltage signal VWLP, which as discussed above relative to
As mentioned above in connection with SRAM 200 of
For example,
Although the invention has been described and illustrated with respect to exemplary embodiments thereof, it should be understood by those skilled in the art that the foregoing and various other changes, omissions and additions may be made therein and thereto, without parting from the spirit and scope of the present invention.
Claims
1. An integrated circuit, comprising:
- a static random access memory (SRAM) powered by an SRAM voltage signal having a first voltage, said SRAM including a plurality of wordlines; and
- at least one wordline voltage regulator operatively configured to drive said plurality of wordlines with a wordline voltage signal having a second voltage lower than the first voltage;
- wherein: said at least one voltage regulator includes a metastability voltage generator; and said SRAM includes a plurality of SRAM cells each having a pair of internal voltage nodes and said metastability voltage generator comprises one of said plurality of SRAM cells having said pair of internal voltage nodes electrically coupled to one another.
2. An integrated circuit according to claim 1, wherein each of said plurality of SRAM cells includes at least one input/output (I/O) device and at least one pull-down device electrically coupled to said I/O device, said I/O and pull-down devices including corresponding respective diffusion regions having identical as-designed widths.
3. An integrated circuit according to claim 2, wherein each of said plurality of SRAM cells is a six-device SRAM cell.
4. An integrated circuit according to claim 1, wherein said at least one voltage regulator includes a read-disturb generator.
5. An integrated circuit according to claim 4, wherein said read-disturb voltage generator mimics at least one-half of each SRAM cell of said plurality of SRAM cells.
6. An integrated circuit according to claim 4, wherein said read-disturb voltage generator comprises a variable current supply.
7. An integrated circuit according to claim 1, wherein each of said plurality of SRAM cells has a metastability voltage, said at least one voltage regulator operatively configured to generate said second voltage as a function of said metastability voltage.
8. An integrated circuit according to claim 1, wherein each of said plurality of SRAM cells has a most positive down level voltage that is a function of said second voltage, said at least one voltage regulator operatively configured to generate said second voltage as a function of said most positive down level voltage.
9. An integrated circuit according to claim 1, wherein each of said plurality of SRAM cells has a metastability voltage and a most positive down level voltage that is a function of said second voltage, said voltage regulator operatively configured to generate said second voltage as a function of said metastability voltage and said most positive down level voltage.
10. An integrated circuit according to claim 1, wherein said voltage regulator includes a feedback loop that feeds back said second voltage.
11. An integrated circuit, comprising:
- a static random access memory (SRAM) powered by an SRAM voltage signal having a first voltage, said SRAM including a plurality of wordlines; and
- at least one wordline voltage regulator operatively configured to drive said plurality of wordlines with a wordline voltage signal having a second voltage lower than the first voltage;
- wherein said SRAM includes a plurality of SRAM cells each having a most positive down level voltage that is a function of said second voltage, said at least one voltage regulator operatively configured to generate said second voltage as a function of said most positive down level voltage.
12. An integrated circuit, comprising:
- a static random access memory (SRAM) powered by an SRAM voltage signal having a first voltage, said SRAM including a plurality of wordlines; and
- at least one wordline voltage regulator operatively configured to drive said plurality of wordlines with a wordline voltage signal having a second voltage lower than the first voltage;
- wherein said SRAM includes a plurality of SRAM cells each having a metastability voltage and a most positive down level voltage that is a function of said second voltage, said voltage regulator operatively configured to generate said second voltage as a function of said metastability voltage and said most positive down level voltage.
13. A method of powering a static random access memory (SRAM) that includes a plurality of SRAM cells and a plurality of wordlines, the method comprising:
- generating a metastability voltage;
- generating a read-disturb voltage;
- generating a wordline voltage as a function of the metastability voltage and the read-disturb voltage; and
- driving the plurality of wordlines with the wordline voltage.
14. A method according to claim 13, wherein each of the plurality of SRAM cells has an operation and said generating of the metastability voltage includes mimicking the operation.
15. A method according to claim 14, wherein each of the plurality of SRAM cells has two mirror-image sides and said mimicking of the operation of each of the plurality of SRAM includes mimicking the operation in a cell having the two mirror-image sides electrically coupled together.
16. A method according to claim 15, wherein said mimicking of the operation includes mimicking the operation in a cell having the two mirror-image sides electrically coupled together with a resistor.
17. A method according to claim 13, wherein said generating of a read-disturb voltage includes generating the read-disturb voltage as a function of the wordline voltage.
18. A method according to claim 17, wherein each of the plurality of SRAM cells has two mirror-image sides said generating of the read-disturb voltage includes driving at least one side of the two mirror-image sides with the wordline voltage.
19. A method according to claim 13, wherein said driving of the plurality of wordlines includes driving the plurality of wordlines with the wordline voltage substantially only during a read cycle.
20. A method according to claim 13, further comprising powering the plurality of wordlines with the wordline voltage substantially only during read cycles and with a power supply voltage at times other than the read cycles.
Type: Application
Filed: Feb 6, 2009
Publication Date: Jun 4, 2009
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY)
Inventors: John A. Fifield (Underhill, VT), Harold Pilo (Underhill, VT)
Application Number: 12/366,770
International Classification: G11C 11/00 (20060101); G11C 5/14 (20060101);