Metallic Dispersion
A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device.
This application is a continuation of U.S. application Ser. No. 11/081,163 filed Mar. 16, 2005 and is fully incorporated herein by reference for all purposes.
FIELD OF THE INVENTIONThis invention generally relates to metallic dispersions and more particularly to metallic dispersions used to form the light-absorbing layers in photovoltaic devices.
BACKGROUND OF THE INVENTIONSolar cells convert sunlight into electricity. These electronic devices have been traditionally fabricated using silicon (Si) as a light-absorbing, semiconducting material in a relatively expensive production process. To make solar cells more economically viable, solar cell device architectures have been developed that can inexpensively make use of thin-film, light-absorbing semiconductor materials such as copper-indium-gallium-sulfo-di-selenide, Cu(In,Ga)(S,Se)2, also termed CI(G)S(S). This class of solar cells typically have an absorber layer sandwiched between an electrode layer and a junction partner layer. The electrode layer is often Mo, while the junction partner is often CdS. A transparent conductive oxide (TCO) such as zinc oxide (ZnOx) is formed on the junction partner layer is typically used as a transparent electrode. CIS-based solar cells have been demonstrated to have power conversion efficiencies exceeding 19%.
A central challenge in efficiently constructing a CIGS-based solar cell is that the components of the CIGS layer must be within a narrow stoichiometric ratio in order for the resulting cell to be highly efficient. Achieving precise stoichiometric composition over relatively larger substrate areas is however difficult using traditional vacuum-based deposition processes. For example, it is difficult to deposit compounds and/or alloys containing more than one element by sputtering or evaporation. Both techniques rely on deposition approaches that are limited to line-of-sight and limited-area sources, tending to result in poor surface coverage. Line-of-sight trajectories and limited-area sources can result non-uniform three-dimensional distribution of nanoparticles in all three dimensions and/or poor film-thickness uniformity over large areas. These non-uniformities can occur over the nano-meso, and/or macroscopic scales. Such non-uniformity also alters the local stoichiometric ratios of the absorber layer, decreasing the potential power conversion efficiency of the complete device.
Alternative approaches to vacuum-based deposition techniques such as sputtering and evaporation have been developed. In particular, production of solar cells on flexible substrates using semiconductor printing technologies provides a highly cost-efficient alternative to conventional vacuum-deposited solar cells. For example, T. Arita and coworkers [20th IEEE PV Specialists Conference, 1988, page 1650] described a screen printing technique that involved mixing and milling pure Cu, In and Se powders in the compositional ratio of 1:1:2 and forming a screen printable paste, screen printing the paste on a substrate, and sintering this film to form the compound layer. They reported that although they had started with elemental Cu, In and Se powders, after the milling step the paste contained the CuInSe2 phase. However, solar cells fabricated on the sintered layers had very low efficiencies because the structural and electronic quality of these absorbers were poor.
Screen-printed CuInSe2 deposited in a thin-film was also reported by A. Vervaet et al. [9th European Communities PV Solar Energy Conference, 1989, page 480], where a CulnSe2 powder was used along with Se powder to prepare a screen printable paste. Layers formed by screen printing were sintered at high temperature. A difficulty in this approach was finding an appropriate fluxing agent for dense CulnSe2 film formation. Solar cells made in this manner also had poor conversion efficiencies.
U.S. Pat. No. 5,985,691 issued to B. M. Basol et al describes another particle-based method to form a Group IB-IIIA-VIA compound film. The described method includes the steps of preparing a source material, depositing the source material on a base to form a precursor, and heating the precursor to form a film. In that method the source material includes Group IB-IIIA containing particles having at least one Group IB-IIIA phase, with Group IB-IIIA constituents present at greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The powder is milled to reduce its particle size and then used in the preparation of an ink which is deposited on the substrate in the form of a precursor layer. The precursor layer is then exposed to an atmosphere containing Group VIA vapors at elevated temperatures to convert the film into the compound. The precursor films deposited using this technique were porous and they yielded porous CuInSe2 layers with small-grain regions as reported by G. Norsworthy et al. [Solar Energy Materials and Solar Cells, 2000, vol. 60, page 127]. Porous solar cell absorbers yield unstable devices because of the large internal surface area within the device, and small grains limit the conversion efficiency of solar cells. Another key limitation of this method was the inability to effectively incorporate gallium into the material. The properly-distributed presence of gallium in a CIS film serves to potentially broaden the bandgap of the semiconductor material, thereby increasing the open circuit voltage of the solar cell, and to promote the adhesion of the CIGS layer to a (Mo) electrode, providing a back surface electric field which can improve the collection of carriers. The absence of gallium decreases the potential power conversion efficiency of the solar cell. In practice, while gallium oxide particles can easily be produced, it is very difficult to reduce gallium oxide, even at relatively high temperatures, and in the absence of reduction, gallium oxide cannot be effectively used as a precursor material for gallium in the final film. Accordingly, in addition to poor stability, solar cells made using the approach of Basol et al. had sub-optimal power conversion efficiency.
Eberspacher and Pauls in U.S. Pat. No. 6,821,559 describe a process for making phase-stabilized precursors in the form of fine particles, such as sub-micron multinary metal particles, and multi-phase mixed-metal particles comprising at least one metal oxide. The preparation of particulate materials was described using a range of methods including laser pyrolysis, atmospheric arc evaporation, solution precipitation, chemical vapor reactions, aerosol pyrolysis, vapor condensation, and laser ablation. In particular, aerosol pyrolysis was used to synthesize mixed-metal particulates comprising metal oxides formed as substantially solid and spherical particulates. These particulate precursor materials were then deposited onto large-area substrates in thin layers using any of a variety of techniques including slurry spraying methods such as pneumatic spraying with a pressurized gas nozzle, hydraulic spraying with a pressurized slurry expelled through an orifice, and ultrasonic spraying with a rapidly vibrating atomization surface. A disadvantage of solar cell devices comprised of thin-film absorber layers formed in this manner was the poor reproducibility of the resulting device performance, and the porous form of the absorber layer, which tends to result in poor device stability.
Bulent Basol in U.S. Published Patent application number 20040219730 describes a process of forming a compound film including formulating a nano-powder material with a controlled overall composition and having particles of one solid solution. The nano-powder material is deposited on a substrate to form a layer on the substrate, and this layer is reacted in at least one suitable atmosphere to form the compound. According to one preferred embodiment of that process, the compound film has a Cu/(In+Ga) compositional range of 0.7-1.0 and a Ga/(In+Ga) compositional range of 0.05-0.3. Due to the improved process window made available by the phase space of a solid solution, the use of nanoparticles comprised of a solid solution may improve the repeatability and the overall yield of the thin-film deposition and solar cell production process. However, a means to incorporate additional Ga beyond that possible through a solid-solution (containing either Cu+Ga or In+Ga) restricts the potential performance of a device constructed by this method. In particular, since the presence of additional gallium in the light absorbing film serves both to broaden the bandgap of the semiconductor material and to increase the open circuit voltage of the solar cell, a lack of additional gallium in the light-absorbing thin film tends to decrease the potential power conversion efficiency of solar cells created in this manner. Using the solid-solution approach, Gallium can be incorporated into the metallic dispersion in non-oxide form—but only with up to approximately 18 relative atomic percent (Subramanian, P. R. and Laughlin, D. E., in Binary Alloy Phase Diagrams, 2nd Edition, edited by Massalski, T. B. 1990. ASM international, Materials Park, Ohio, pp 1410-1412; Hansen, M., Constitution of Binary Alloys. 1958. 2nd Edition, McGraw Hill, pp. 582-584.). However, efficient CIGS solar cells benefit from achieving a gallium ratio of up to 25 relative atomic percent. Furthermore, it would be simpler to directly work with elemental metallic nanoparticles rather than solid-solution metallic nanoparticles in that the elements can be optimized individually and they are more readily available in elemental form. However, no technique was known in the prior art to create gallium nanoparticle powders sufficient and adequate for semiconductor applications, in part because gallium is molten at room temperature and therefore does not lend itself to common techniques for creating nanoparticles in the form of powders that are then dispersed in solution (as commonly done with the other elements). As a result, it was not possible in the prior art to directly incorporate gallium (or incorporate gallium in a high percentage) into the metallic dispersion used to print the CIG precursor of a CIGS solar cell.
Thus, there is a need in the art for a method of forming a material comprised of gallium-containing CIGS precursor materials, where the precursor materials can be reproducibly, uniformly, and densely applied over large substrate areas to form a thin-film CIGS solar cell, and where the gallium is directly included in an elemental form.
SUMMARY OF THE INVENTIONThe disadvantages associated with the prior art are overcome by embodiments of the present invention directed to the synthesis of a metallic dispersion of CIGS precursor materials. According to one embodiment a compound film may be formed from a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition where the nanoparticle mixture is combined with a suspension of nanoglobules of gallium. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as the light-absorbing layer of a photovoltaic device.
Although the following detailed description contains many specific details for the purposes of illustration, anyone of ordinary skill in the art will appreciate that many variations and alterations to the following details are within the scope of the invention. Accordingly, the examples of embodiments of the invention described below are set forth without any loss of generality to, and without imposing limitations upon, the claimed invention.
To form a Ib-IIIa-VIa compound film for use as a light-absorbing layer in a photovoltaic device, embodiments of the invention use a composition of matter in the form of a dispersion containing a mixture of elemental nanoparticles of the Ib, the IIIa, and, optionally, the VIa group of elements, dispersed with a suspension of nanoglobules of gallium. Based on the relative ratios of input elements, the gallium nanoglobule-containing dispersion can then have a Cu/(In+Ga) compositional ratio ranging from 0.01 to 1.0 and a Ga/(In+Ga) compositional ratio ranging from 0.01 to 1.0.
As illustrated in
The mixture of elemental nanoparticles 102 may optionally include aluminum, tellurium, or sulfur. Any or all of these classes of nanoparticles may be optionally doped with one or more inorganic materials. Examples of such inorganic materials include but are not limited to aluminum (Al), sulfur (S), sodium (Na), potassium (K), or lithium (Li). The nanoparticles 102 typically have average diameters ranging from 10 nm to 1000 nm, more preferably from 10 nm to 500 nm, and most preferably, from 10 nm to 100 nm. Preferably, the nanoparticles are less than about 500 nm in diameter, more preferably less than about 100 nm and even more preferably less than about 50 nm. Various techniques may be used for making such nanoparticles, including but not limited to dry-synthesis techniques such as evaporation-condensation (Granqvist and Buhrman, 1976, “Ultrafine metal particles”, J. Applied Physics 47 (5): 220-2219, which is incorporated herein by reference) and the electro-explosion of wire (Tepper, “Nanosized Alumina Fibers”, Advanced Materials, American Ceramic Society Bulletin, Vol. 80, No. 6, June 2001, which is incorporated herein by reference), and wet chemical techniques, including but not limited to thermal decomposition of organometallic precursors (Hambrock et al, 2002, Chem. Commun. 68-69, which is incorporated by reference) and metal salt reduction (Cai et al., 2004. Applied Surface Science 226: 422-426; Capek, 2004. Adv. In Colloid and Interface Science 110: 49-74, both of which are incorporated by reference). In addition, nanoparticles of certain elements, such as copper are commercially available from a variety of vendors in the form of nano-powders.
The nanoparticles 102 are mixed together and with one or more chemicals 104 including but not limited to dispersants, surfactants, polymers, binders, cross-linking agents, emulsifiers, anti-foaming agents, dryers, solvents, fillers, extenders, thickening agents, film conditioners, anti-oxidants, flow agents, leveling agents, and corrosion inhibitors.
Dispersants (also called wetting agents) are surface-active substances used to prevent ultrafine flocculating particles from reaggregating, thus facilitating the suspension of solid compounding materials in a liquid medium and stabilizing the dispersion thereby produced. If particle surfaces attract one another, then flocculation occurs, resulting in aggregation and decreasing stability and/or homogeneity. If particle surfaces repel one another, then stabilization occurs, where fine particles do not aggregate and tend not to settle out of solution as fast.
An efficient dispersing agent can typically perform pigment wetting, dispersing, and stabilizing. Dispersing agents are different depending on the nature of the ink/paint. Polyphosphates, styrene-maleinates and polyacrylates are often used for aqueous formulations whereas fatty acid derivatives and low molecular weight modified alkyd and polyester resins are often used for organic formulations.
Surfactants are surface-active agents that lower the surface tension of the solvent in which they dissolve, serving as wetting agents, and keeping the surface tension of an (aqueous) medium low so that an ink interacts with a substrate surface. Certain types of surfactants are also used as dispersing agents. Surfactants typically contain both a hydrophobic carbon chain and a hydrophilic polar group. The polar group can be non-ionic. If the polar group is ionic, the charge can be either positive or negative, resulting in cationic or anionic surfactants. Zwitterionic surfactants contain both positive and negative charges within the same molecule; one example is N-n-Dodecyl-N,N-diemthyl betaine. Certain surfactants are often used as dispersant agents for aqueous solutions. Representative classes include acetylene diols, fatty acid derivatives, phosphate esters, sodium polyacrylate salts, polyacrylic acids, soya lecithin, trioctylphosphine (TOP), and trioctylphosphine oxide (TOPO).
Binders and resins are often used to hold together proximate particles in a nascent or formed dispersion. Examples of typical binders include acrylic monomers (both as monofunctional diluents and multifunctional reactive agents), acrylic resins (e.g. acrylic polyol, amine synergists, epoxy acrylics, polyester acrylics, polyether acrylics, styrene/acrylics, urethane acrylics, or vinyl acrylics), alkyd resins (e.g. long-oil, medium-oil, short-oil, or tall oil), adhesion promoters such as polyvinyl pyrrolidone (PVP), amide resins, amino resins (such as melamine-based or urea-based compounds), asphalt/bitumen, butadiene acrylonitriles, cellulosic resins (such as cellulose acetate butyrate (CAB)), cellulose acetate proprionate (CAP), ethyl cellulose (EC), nitrocellulose (NC), or organic cellulose ester), chlorinated rubber, dimer fatty acids, epoxy resin (e.g. acrylates, bisphenol A-based resins, epoxy UV curing resins, esters, phenol and cresol (Novolacs), or phenoxy-based compounds), ethylene co-terpolymers such as ethylene acrylic/methacrylic Acid, E/AA, E/M/AA or ethylene vinyl acetate (EVA), fluoropolymers, gelatin (e.g. Pluronic F-68 from BASF Corporation of Florham Park, N.J.), glycol monomers, hydrocarbon resins (e.g. aliphatic, aromatic, or coumarone-based such as indene), maelic resins, modified urea, natural rubber, natural resins and gums, rosins, modified phenolic resins, resols, polyamide, polybutadienes (liquid hydroxyl-terminated), polyesters (both saturated and unsaturated), polyolefins, polyurethane (PU) isocyanates (e.g. hexamethylene diisocynate (HDI), isophorone diisocyanate (IPDI), cycloaliphatics, diphenylmethane disiocyanate (MDI), toluene diisocynate (TDI), or trimethylhexamethylene diisocynate (TMDI)), polyurethane (PU) polyols (e.g. caprolactone, dimer-based polyesters, polyester, or polyether), polyurethane (PU) dispersions (PUDs) such those based on polyesters or polyethers, polyurethane prepolymers (e.g. caprolactone, dimer-based polyesters, polyesters, polyethers, and compounds based on urethane acrylate), Polyurethane thermoplastics (TPU) such as polyester or polyether, silicates (e.g. alkyl-silicates or water-glass based compounds), silicones (amine functional, epoxy functional, ethoxy functional, hydroxyl functional, methoxy functional, silanol functional, or cinyl functional), styrenes (e.g. styrene-butadiene emulsions, and styrene/vinyl toluene polymers and copolymers), or vinyl compounds (e.g. polyolefins and polyolefin derivatives, polystyrene and styrene copolymers, or polyvinyl acetate (PVAC)).
Emulsifiers are dispersing agents that blend liquids with other liquids by promoting the breakup of aggregating materials into small droplets and therefore stabilize the suspension in solution. For example, sorbitan esters are used as an emulsifier for the preparation of water-in-oil (w/o) emulsions, for the preparation of oil absorption bases (w/o), for the formation of w/o type pomades, as a reabsorption agent, and as a non toxic anti-foaming agent. Examples of emulsifiers are sorbitan esters such as sorbitan sesquioleate (Arlacel 60), sorbitan sesquioleate (Arlacel 83), sorbitan monolaurate (Span 20), sorbitan monopalmitate (Span 40), sorbitan monostearate (Span 60), sorbitan tristearate (Span 65), sorbitan mono-oleate (Span 80), and sorbitan trioleate (Span 85) all of which are available, e.g., from Uniqema of New Castle, Del. Other polymeric emulsifiers include polyoxyethylene monostearate (Myrj 45), polyoxyethylene monostearate (Myrj 49), polyoxyl 40 stearate (Myrj 52), polyoxyethylene monolaurate (PEG 400), polyoxyethylene monooleate (PEG 400 monoleate) and polyoxyethylene monostearate (PEG 400 monostearate), and the Tween series of surfactants including but not limited to polyoxyethylene sorbitan monolaurate (Tween 20), polyoxyethylene sorbitan monolaurate (Tween 21), polyoxyethylene sorbitan monopalmitate (Tween 40), polyoxyethylene sorbitan monostearate (Tween 60), polyoxyethylene sorbitan tristearate (Tween 61), polyoxyethylene sorbitan mono-oleate (Tween 80), polyoxyethylene sorbitan monooleate (Tween 81), and polyoxyethylene sorbitan tri-oleate (Tween 85) all of which are available, e.g., from Uniqema of New Castle, Del. Arlacel, Myrj, and Tween are registered trademarks of ICI Americas Inc. of Wilmington, Del.
Foam may form from the release of various gases during the coating/printing process, especially if the printing process takes place at high speeds. Surfactants may adsorb on the liquid air interface and stabilize it, accelerating foam formation. Anti-foaming agents prevent foaming from being initiated, while defoaming agents minimize or eliminate previously-formed foam. Anti-foaming agents include hydrophobic solids, fatty oils, and certain surfactants, all of which penetrate the liquid-air interface to slow foam formation. Anti-foaming agents also include both silicate, silicone and silicone-free materials. Silicone-free materials include microcrystalline wax, mineral oil, polymeric materials, and silica- and surfactant-based materials.
Solvents can be aqueous (water-based) or non-aqueous (organic). While environmentally friendly, water-based solutions carry the disadvantage of a relatively higher surface tension than organic solvents, making it more difficult to wet substrates, especially plastic substrates. To improve substrate wetting with polymer substrates, surfactants are added to lower the ink surface tension (while minimizing surfactant-stabilized foaming), while the substrate surfaces are modified to enhance their surface energy (e.g. by corona treatment). Typical organic solvents include acetate, acrylates, alcohols (butyl, ethyl, isopropyl, or methyl), aldehydes, benzene, dibromomethane, chloroform, dichloromethane, dichloroethane, trichloroethane, cyclic compounds (e.g. cyclopentanone or cyclohexanone), esters (e.g. butyl acetate or ethyl acetate), ethers, glycols (such as ethylene glycol or propylene glycol), hexane, heptane, aliphatic hydrocarbons, aromatic hydrocarbons, ketones (e.g. acetone, methyl ethyl ketone, or methyl isobutyl ketone), natural oils, terpenes, terpinol, toluene.
Additional components may include fillers/extenders, thickening agents, rheology modifiers, surface conditioners, including adhesion promoters/bonding, anti-gelling agents, anti-blocking agents, antistatic agents, chelating/complexing agents, corrosion inhibitors, flame/rust inhibitors, flame and fire retardants, humectants, heat stabilizers, light-stabilizers/UV absorbers, lubricants, pH stabilizers, and materials for slip control, anti-oxidants, and flow and leveling agents.
To provide gallium for the composition, gallium nanoglobules 114 are formed by initially creating an emulsion 112 of liquid gallium 108 in a solution 110 as shown in
To form a light-absorbing layer, the dispersion 116 may then be deposited onto a substrate 118 with a contact layer 119 to form a layer 120 as shown in
The layer 120 is then reacted in a suitable atmosphere to form a compound film 122. For example, upon printing, the layer 120 is then heated to remove any solvent and other added organic or volatile materials from the dispersion 116 and to anneal it into a compound film 122 as shown in
The compound film 122 may be used as the light-absorbing layer in a photovoltaic device. For example, as shown in
The transparent conductive layer 128 may be inorganic, e.g., a transparent conductive oxide (TCO) such as indium tin oxide (ITO), fluorinated indium tin oxide, zinc oxide (ZnO) or aluminum doped zinc oxide, which can be deposited using any of a variety of means including but not limited to sputtering, evaporation, CBD, electroplating, sol-gel based coating, spray coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), and the like. Alternatively, the transparent conductive layer may include a transparent conductive polymeric layer, e.g. a transparent layer of doped PEDOT (Poly-3,4-Ethylenedioxythiophene), carbon nanotubes, or other transparent organic materials, either singly or in combination, which can be deposited using spin, dip, or spray coating, and the like. Combinations of inorganic and organic materials can also be used to form a hybrid transparent conductive layer.
While the above is a complete description of the preferred embodiment of the present invention, it is possible to use various alternatives, modifications and equivalents. Therefore, the scope of the present invention should be determined not with reference to the above description but should, instead, be determined with reference to the appended claims, along with their full scope of equivalents. In the claims that follow, the indefinite article “A”, or “An” refers to a quantity of one or more of the item following the article, except where expressly stated otherwise. The appended claims are not to be interpreted as including means-plus-function limitations, unless such a limitation is explicitly recited in a given claim using the phrase “means for.”
Claims
1. A semiconductor film made by a process comprising:
- formulating a dispersion of nanoparticles of the Ib, the IIIa, and, optionally, the VIa group of elements, depositing said dispersion onto a substrate to form a layer on the substrate, and reacting the layer in a suitable atmosphere to form said compound film, wherein said compound film has a Cu/(In+Ga) compositional range of about 0.01 to about 1.0 and a Ga/(In+Ga) compositional range of about 0.01 to about 1.0.
2. A photovoltaic device having a light-absorbing layer containing elements of groups Ib, IIIa and VIa, wherein the light-absorbing layer is formed from a compound film deposited on a substrate by the process of claim 1.
3. The process of claim 1, wherein said nanoparticles are solid-particulates.
4. The process of claim 1, wherein said dispersion nanoparticles includes at least one element from the group consisting of: aluminum, tellurium, or sulfur.
5. The process of claim 1, wherein one or more classes of said nanoparticles are doped with one or more inorganic materials.
6. The process of claim 5, wherein the inorganic materials are chosen from the group of aluminum (Al), sulfur (S), sodium (Na), potassium (K), or lithium (Li).
7. The process of claim 1 wherein depositing includes using at least one method from the group consisting of: dip coating, spin coating, web coating, doctor blade coating, cup coating, spray coating, printing, microgravure, reverse microgravure, comma, slot/die coating, lip coating, and the like.
8. The process of claim 1 wherein the substrate is flexible.
9. The process of claim 1 wherein e substrate is a plastic foil, or a metallized plastic foil.
10. The process of claim 9 wherein the substrate is selected from the group consisting of: stainless steel, Al, Mo, and Ti.
11. The process of claim 9 further comprising a contact layer comprised of a different metal than the substrate and disposed between the substrate and the film.
12. The process of claim 9 wherein the contact layer comprises molybdenum.
13. The process of claim 9 further comprising depositing a window layer on the semiconductor film.
14. The process of claim 13 wherein the window layer comprises of a material selected from the group consisting of: cadmium sulfide (CdS), zinc sulfide (ZnS), zinc hydroxide, zinc selenide (ZnSe), n-type organic materials, or some combination of two or more of these or similar materials.
15. The process of claim 1 wherein reacting occurs during the annealing step.
16. The process of claim 1 wherein reacting occurs after the annealing step.
17. The process of claim 1 wherein reacting occurs in a suitable atmosphere that contains at least one from the group consisting of: selenium, sulfur, or tellurium, and/or hydride gases comprising Se and/or S and/or Te, or mixtures of these gases.
Type: Application
Filed: Oct 19, 2009
Publication Date: Apr 22, 2010
Inventors: Matthew R. Robinson (San Jose, CA), Martin R. Roscheisen (San Francisco, CA)
Application Number: 12/581,837
International Classification: H01L 31/0264 (20060101); H01L 31/18 (20060101);
