Compound Semiconductor Patents (Class 438/93)
  • Patent number: 10319594
    Abstract: Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes a separation start point forming step of applying the laser beam to the second surface as relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface and cracks inside the SiC substrate at the predetermined depth, thus forming a separation start point, and a wafer thinning step of applying an external force to the wafer, thereby separating the wafer into a first wafer having the first surface of the SiC substrate and a second wafer having the second surface of the SiC substrate at the separation start point.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: June 11, 2019
    Assignee: DISCO CORPORATION
    Inventor: Kazuya Hirata
  • Patent number: 10121952
    Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: November 6, 2018
    Assignee: THE UNIVERSITY OF CHICAGO
    Inventors: Dmitri V. Talapin, Maksym V. Kovalenko, Jong-Soo Lee, Chengyang Jiang
  • Patent number: 10103185
    Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: October 16, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dajiang Yang, Gang Chen, Duli Mao, Dyson H. Tai
  • Patent number: 10068762
    Abstract: Providing a manufacture method of a gate insulating film formed on an SiC substrate having thereon an SiON film, achieving both of the maintenance of an SiON film structure and the formation of a high-quality insulating film. A manufacture method of a gate insulating film for an SiC semiconductor device comprises preparing a transfer plate comprising a transfer substrate and an insulating film formed thereon; preparing a surface-processed substrate comprising an SiC substrate and an epitaxial silicon oxynitride film as an atomic monolayer formed thereon; and transferring the insulating film from the transfer plate onto the silicon oxynitride film of the surface-processed substrate to produce the surface-processed substrate having a transferred insulating film.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: September 4, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Takuro Inamoto, Takeshi Fujii, Mariko Sato
  • Patent number: 9691955
    Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: June 27, 2017
    Assignee: Micron Technology, Inc.
    Inventor: Martin F. Schubert
  • Patent number: 9673167
    Abstract: This invention relates to a method for bonding of a first contact area of a first at least largely transparent substrate to a second contact area of a second at least largely transparent substrate, on at least one of the contact areas an oxide being used for bonding, from which an at least largely transparent interconnection layer is formed with an electrical conductivity of at least 10e1 S/cm2 (measurement: four point method, relative to temperature of 300K) and an optical transmittance greater than 0.8 (for a wavelength range from 400 nm to 1500 nm) on the first and second contact area.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: June 6, 2017
    Assignee: EV GROUP E. THALLNER GMBH
    Inventor: Markus Wimplinger
  • Patent number: 9450153
    Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
    Type: Grant
    Filed: November 23, 2015
    Date of Patent: September 20, 2016
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Hyoung Jin Lim, Chan Seob Shin, Kyu Ho Lee, Tae Gyun Kim, Sung Won Tae
  • Patent number: 9356183
    Abstract: A compound III/V optoelectronic device and method associated with such a device is disclosed. In one aspect, a method for an improved III/V compound optoelectronic device is disclosed. The method comprises applying a sulfur surfactant on the III/V compound optoelectronic device to improve passivation of the III/V compound optoelectronic device. In a second aspect, a III/V compound optoelectronic device is disclosed. The III/V compound optoelectronic device comprises a thin film device with a III/V compound semiconductor absorbing material, and a sulfur surfactant on the III/V compound thin film device to improve passivation of the III/V compound optoelectronic device.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: May 31, 2016
    Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Matthew Sheldon, Carissa N. Eisler, Harry A. Atwater
  • Patent number: 9287435
    Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: March 15, 2016
    Assignees: Dow Global Technologies LLC, California Institute of Technology
    Inventors: Gregory M. Kimball, Harry A. Atwater, Nathan S. Lewis, Jeffrey P. Bosco, Rebekah K. Feist
  • Patent number: 9146157
    Abstract: A dual band detector includes a substrate, a composite barrier, a first absorber on the substrate and on a light incident side of the composite barrier, the first absorber for detecting first infrared light wavelengths, a second absorber on the composite barrier on a side opposite the light incident side, the second absorber for detecting second infrared light wavelengths, wherein a bandgap of the first absorber is larger than that of the second absorber, wherein the composite barrier includes a first secondary barrier, a primary barrier, and a second secondary barrier, wherein the first and second secondary barriers may have a lower bandgap energy than the primary barrier, wherein the first or the second secondary barrier may have a doping level and type different from that of the primary barrier, and wherein at least the primary barrier blocks majority carriers and allows minority carrier flow.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: September 29, 2015
    Assignee: HRL Laboratories, LLC
    Inventors: Rajesh Rajavel, Hasan Sharifi, Terence De Lyon, Brett Nosho, Daniel Yap
  • Patent number: 9059353
    Abstract: An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0?x1?1, 0?y1?1 and x1+y1?1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0?x2?1, 0?y2?1 and x2+y2?1.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: June 16, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Simeon Katz, Bastian Galler, Martin Strassburg, Matthias Sabathil, Philipp Drechsel, Werner Bergbauer, Martin Mandl
  • Patent number: 9040812
    Abstract: A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: May 26, 2015
    Assignee: Intellectual Discovery Co., Ltd.
    Inventor: Seung-Yeop Myong
  • Publication number: 20150136230
    Abstract: A solar cell according to an example embodiment includes: a substrate; a first electrode formed on the substrate; a photoactive layer formed on the first electrode and including sodium and potassium; a buffer layer formed on the photoactive layer; and a second electrode formed on the buffer layer. The photoactive layer includes an area where a content of sodium is greater than a content of potassium.
    Type: Application
    Filed: October 14, 2014
    Publication date: May 21, 2015
    Inventors: Young-Su Kim, Jung-Gyu Nam, Ji-Won Lee
  • Patent number: 9034685
    Abstract: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: May 19, 2015
    Assignees: Dow Global Technologies LLC, California Institute of Technology
    Inventors: Gregory M. Kimball, Jeffrey P. Bosco, Harry A. Atwater, Nathan S. Lewis, Marty W. Degroot, James C. Stevens
  • Patent number: 9029688
    Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: May 12, 2015
    Assignee: Intellectual Discovery Co., Ltd.
    Inventor: Seung-Yeop Myong
  • Publication number: 20150114458
    Abstract: A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.
    Type: Application
    Filed: October 24, 2013
    Publication date: April 30, 2015
    Applicant: TSMC Solar Ltd.
    Inventors: Tzu-Huan CHENG, Chia-Hung TSAI
  • Publication number: 20150114455
    Abstract: A solar cell according to embodiments of the present invention includes: a substrate; a first electrode formed on the substrate; a photoactive layer formed on the first electrode and including group I and III elements; and a second electrode formed on the photoactive layer. The first electrode includes first and second parts respectively having different, resistivity, and group I to group III element composition ratios of the photoactive layer respectively corresponding to the first and second parts are different from each other.
    Type: Application
    Filed: April 1, 2014
    Publication date: April 30, 2015
    Applicant: SAMSUNG SDI CO., LTD.
    Inventor: Seung-Jae Jung
  • Patent number: 9011763
    Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.
    Type: Grant
    Filed: September 20, 2012
    Date of Patent: April 21, 2015
    Assignees: Massachusetts Institute of Technology, Trustees of Boston College
    Inventors: Gang Chen, Mildred Dresselhaus, Zhifeng Ren
  • Publication number: 20150084151
    Abstract: A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.
    Type: Application
    Filed: September 25, 2014
    Publication date: March 26, 2015
    Inventors: Takayuki YONEMURA, Yoshihiko YOKOYAMA, Yasuaki HAMADA
  • Publication number: 20150083225
    Abstract: A photovoltaic dye cell including a cell housing having an at least partially transparent cell wall; an electrolyte, disposed within the housing, and containing a charge transfer species; an at least partially transparent electrically conductive layer disposed on a first interior surface of the cell wall, within the photovoltaic cell; an anode disposed on the electrically conductive layer, the anode including: (i) a sintered porous film containing sintered titania, the film disposed on a broad face of the electrically conductive layer, and adapted to make intimate contact with the electrolyte, and (ii) a dye, absorbed on a surface of the porous film, the dye and the porous film adapted to convert photons to electrons, by means of the charge transfer species; and a cathode disposed substantially opposite the anode, and including a catalytic surface disposed to contact the electrolyte; wherein the film has an overall average pore size (d50) falling within a range of 25 to 45 nanometers, contains less than 700 p
    Type: Application
    Filed: June 30, 2014
    Publication date: March 26, 2015
    Inventors: Barry Breen, Izhak Barzilay, Boris Brudnik, Jonathan R. Goldstein
  • Patent number: 8987856
    Abstract: A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: March 24, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Fang-An Shu, Yao-Chou Tsai, Ted-Hong Shinn
  • Patent number: 8987129
    Abstract: Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.
    Type: Grant
    Filed: September 26, 2012
    Date of Patent: March 24, 2015
    Assignee: The Boeing Company
    Inventors: Joseph C. Boisvert, Christopher M. Fetzer
  • Patent number: 8987042
    Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10?4 ohms-cm2.
    Type: Grant
    Filed: May 22, 2014
    Date of Patent: March 24, 2015
    Assignee: SolAero Technologies Corp.
    Inventors: Tansen Varghese, Arthur Cornfeld
  • Patent number: 8980681
    Abstract: The disclosure provides a method for fabricating a solar cell, including: providing a first substrate; forming a light absorption precursor layer on the first substrate; conducting a thermal process to the light absorption precursor layer to form a light absorption layer, wherein the light absorption layer includes a first light absorption layer and a second light absorption layer, and the first absorption layer is formed on the first substrate; forming a second substrate on the second light absorption layer; removing the first substrate to expose a surface of the first light absorption layer; forming a zinc sulfide (ZnS) layer on the surface of the first light absorption layer; and forming a transparent conducting oxide (TCO) layer on the zinc sulfide (ZnS) layer.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: March 17, 2015
    Assignee: Industrial Technology Research Institute
    Inventor: Wei-Tse Hsu
  • Publication number: 20150063543
    Abstract: A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process.
    Type: Application
    Filed: September 1, 2014
    Publication date: March 5, 2015
    Inventors: Seung-hyup LEE, Sun-il KIM, Young KIM, Chang-jung KIM
  • Publication number: 20150064838
    Abstract: Self-assembled monolayer hybrid materials having a modified carboxylic acid deposited from the gas-phase onto a metal oxide substrate, methods of using targeted ?-carbon modified carboxylic acids to rapidly deposit activated organic molecules into a self-assembled monolayer on metal oxide substrates, and the self-assembled monolayer hybrid materials capable of being used in various industries, such as optoelectronics and separation science.
    Type: Application
    Filed: September 4, 2014
    Publication date: March 5, 2015
    Inventors: Brian A. Logue, Mahdi Farrakh Baroughi, Venkataiah Mallam
  • Patent number: 8962379
    Abstract: A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: February 24, 2015
    Assignee: Nitto Denko Corporation
    Inventors: Hiroto Nishii, Shigenori Morita, Seiki Teraji, Kazuhito Hosokawa, Takashi Minemoto
  • Patent number: 8946838
    Abstract: A radiation converter includes a directly converting semiconductor layer having grains whose interfaces predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. Charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta. This increases the absorptivity of the radiation converter which in turn makes it possible to reduce a radiation dose applied to the patient.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: February 3, 2015
    Assignee: Siemens Aktiengesellschaft
    Inventor: Christian Schröter
  • Patent number: 8946545
    Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: February 3, 2015
    Assignee: Intellectual Discovery Co., Ltd.
    Inventor: Seung-Yeop Myong
  • Patent number: 8945975
    Abstract: In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: February 3, 2015
    Assignees: Koninklijke Philips N.V., Philips Lumileds Lighting Company LLC
    Inventors: Andrew Y. Kim, Patrick N. Grillot
  • Publication number: 20150027543
    Abstract: The invention relates to a coating composition consisting of an oxide compound. The invention also relates to a method for producing a coating composition consisting of an oxide compound and to a method for coating substrates composed of metal, semiconductor, alloy, ceramic, quartz, glass or glass-type materials with coating compositions of this type. The invention further relates to the use of a coating composition according to the invention for coating metal, semiconductor, alloy, ceramic, quartz, glass and/or glass-type substrates.
    Type: Application
    Filed: October 14, 2014
    Publication date: January 29, 2015
    Inventors: Oral Cenk Aktas, Michael Veith, Sener Albayrak, Benny Siegert, Yann Patrick Wolf
  • Publication number: 20150027529
    Abstract: The present invention generally relates to electrodes formed by oxidative chemical vapor deposition and related methods and devices.
    Type: Application
    Filed: February 13, 2013
    Publication date: January 29, 2015
    Applicant: Massachusetts Institute of Technology
    Inventors: Miles C. Barr, Rachel M. Howden, Karen K. Gleason, Vladimir Bulovic
  • Patent number: 8940624
    Abstract: A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T1, supplying a V-group material gas containing a carbon source for a predetermined time period T2 when a predetermined time period t1 (t1+T2>T1) elapses after the supply of the III-group material gas begins, repeating the step of supplying the III-group material gas and the step of supplying the V-group material gas when a predetermined time period t2 (t1+T2?t2>T1) elapses after the supply of the V-group material gas begins, and thus forming an AlxGa1-xN semiconductor layer (0<x?1) at a growth temperature of 1190° C.˜1370° C. or a growth temperature at which a substrate temperature is 1070° C.˜1250° C. using a chemical vapor deposition method or a vacuum evaporation method. Nitrogen sites within the semiconductor layer are doped with carbon.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: January 27, 2015
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Hideo Kawanishi
  • Publication number: 20150011042
    Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.
    Type: Application
    Filed: January 30, 2013
    Publication date: January 8, 2015
    Inventors: Gregory M. Kimball, Harry A. Atwater, Nathan S. Lewis, Jeffrey P. Bosco, Rebekah K. Feist
  • Patent number: 8927310
    Abstract: A method of fabricating a patterned substrate, with which the optical performance of a photovoltaic cell including an organic solar cell and an organic light-emitting diode (OLED) can be improved. The method includes generating electrostatic force on a surface of a substrate by treating the substrate with electrolytes, causing nano-particles to be adsorbed on the surface of the substrate, etching the surface of the substrate using the nano-particles as an etching mask, and removing the nano-particles residing on the surface of the substrate.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: January 6, 2015
    Assignee: Samsung Corning Precision Materials Co., Ltd.
    Inventors: Jeong Woo Park, Yoon Young Kwon, Kyungwook Park, Young Zo Yoo
  • Patent number: 8927392
    Abstract: Methods for forming semiconductor devices include providing a textured template, forming a buffer layer over the textured template, forming a substrate layer over the buffer layer, removing the textured template, thereby exposing a surface of the buffer layer, and forming a semiconductor layer over the exposed surface of the buffer layer.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: January 6, 2015
    Assignee: Siva Power, Inc.
    Inventor: Leslie G. Fritzemeier
  • Patent number: 8927324
    Abstract: A method for the production of a wafer-based, back-contacted heterojunction solar cell includes providing at least one absorber wafer. Metallic contacts are deposited as at least one of point contacts and strip contacts in a predetermined distribution on a back side of the at least one absorber wafer. The contacts have steep flanks that are higher than a cumulative layer thickness of an emitter layer and an emitter contact layer and are sheathed with an insulating sheath. The emitter layer is deposited over an entire surface of the back side of the at least one absorber wafer. The emitter contact layer is deposited over an entire surface of the emitter layer so as to form an emitter contact system. At least one of the emitter layer and the emitter contact layer is selectively removed so as to expose the steep flanks of the contacts that are covered with the insulating sheath.
    Type: Grant
    Filed: October 10, 2009
    Date of Patent: January 6, 2015
    Assignee: Helmholtz-Zentrum Berlin Fuer Materialien und Energie GmbH
    Inventor: Rolf Stangl
  • Publication number: 20150004735
    Abstract: A method for manufacturing large-area organic solar cells utilizes a hot solvent vapor annealing manufacturing process while manufacturing the organic solar cells via a large-area proceeding method, such as spraying. Namely, a heated solvent vapor is utilized to modify an active layer after the active layer of the organic solar cells is formed, which ensures a flatness and an uniformity thereof and increases a crystallinity of the active layer and an element charge transport rate so that a power conversion efficiency of the large area organic solar cells is increased, a proceeding time is quite short, and the performance thereof is quite obvious. Therefore, the method not only reduces the cost by a large area production but obtains organic solar cells with higher conversion efficiency.
    Type: Application
    Filed: October 2, 2013
    Publication date: January 1, 2015
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: YU-CHING HUANG, HOU-CHIN CHA, FAN-HSUAN HSU, CHENG-WEI CHOU, DE-HAN LU, YEONG-DER LIN, CHIH-MIN CHUANG, CHARN-YING CHEN, CHENG-SI TSAO
  • Publication number: 20140352772
    Abstract: A solar cell includes a substrate, a barrier layer on the substrate, a back electrode layer on the barrier layer, a light absorption layer on the back electrode layer, a buffer layer on the light absorption layer, and a transparent electrode layer on the buffer layer. The barrier layer is selectively formed on the substrate. Accordingly, since alkali elements may be uniformly distributed in the light absorption layer, the efficiency of the solar cell may be improved.
    Type: Application
    Filed: December 23, 2013
    Publication date: December 4, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventor: Dong-Jin KIM
  • Publication number: 20140352785
    Abstract: A method of manufacturing a solar cell that includes forming a first electrode on a substrate, forming a first thin film including a Group III-VI compound on the first electrode, forming a second thin film including a Group I-III compound on the first thin film, forming a third thin film including a Group III element on the second thin film, heat-treating the first thin film, the second thin film, and the third thin film under a gas atmosphere containing a Group VI element to form a photoactive layer, and forming a second electrode on the resulting photoactive layer, wherein the first thin film and the third thin film include the same Group III element, and the second thin film includes a Group III element that is different from the Group III element of the first thin film and the third thin film.
    Type: Application
    Filed: December 6, 2013
    Publication date: December 4, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Soon-Il Jung, Jeong-Hoon Ryu
  • Patent number: 8901533
    Abstract: Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-moon Lee, Young-jin Cho
  • Publication number: 20140345673
    Abstract: Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.
    Type: Application
    Filed: May 21, 2014
    Publication date: November 27, 2014
    Applicant: Alliance for Sustainable Energy, LLC
    Inventors: Marinus Franciscus Antonius Maria van Hest, Heather Anne Swinger Platt
  • Publication number: 20140339561
    Abstract: A detecting device includes a conversion device having a substrate, a pixel electrode formed of a transparent conductive oxide, a impurity semiconductor portion, and a semiconductor portion, the pixel electrode, impurity semiconductor portion, and semiconductor portion having been formed upon the substrate in that order from the substrate side. The impurity semiconductor portion includes a first region including a place in contact with the pixel electrode, and a second region situated nearer to the semiconductor portion than the first region. Concentration of dopant in the second region is higher than concentration of dopant in the first region.
    Type: Application
    Filed: May 13, 2014
    Publication date: November 20, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Keigo Yokoyama, Minoru Watanabe, Masato Ofuji, Jun Kawanabe, Kentaro Fujiyoshi, Hiroshi Wayama
  • Patent number: 8889467
    Abstract: The present invention relates to a semiconductor compound having the general formula AxB1-xCy, to a method of optimizing positions of a conduction band and a valence band of a semiconductor material using said semiconductor compound, and to a photoactive device comprising said semiconductor compound.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: November 18, 2014
    Assignee: Sony Deutschland GmbH
    Inventors: Michael Duerr, Silvia Rosselli, Gabriele Nelles, Akio Yasuda
  • Patent number: 8889468
    Abstract: A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top window material underlies the top first transparent conductive oxide material. A first interface region is disposed between the top window material and the top first transparent conductive oxide material. The first interface region is substantially free from one or more entities from the top first transparent conductive oxide material diffused into the top window material. A top absorber material comprising a copper species, an indium species, and a sulfur species underlies the top window material. A top second transparent conductive oxide material underlies the top absorber material. A second interface region is disposed between the top second transparent conductive oxide material and the top absorber material. The bottom cell includes a bottom first transparent conductive oxide material.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: November 18, 2014
    Assignee: Stion Corporation
    Inventor: Howard W. H. Lee
  • Patent number: 8889466
    Abstract: A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: November 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Talia S. Gershon, Supratik Guha, Jeehwan Kim, Mahadevaiyer Krishnan, Byungha Shin
  • Publication number: 20140332730
    Abstract: The present invention relates to polymers (I), or (II), and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.
    Type: Application
    Filed: December 3, 2012
    Publication date: November 13, 2014
    Applicant: BASF SE
    Inventors: Pascal Hayoz, Patrice Bujard
  • Patent number: 8883617
    Abstract: One aspect in the present disclosure relates to a method for manufacturing an amorphous metal oxide semiconductor. In an exemplary embodiment, a film is deposited on a substrate from a mixed solution as a starting element. For example, the mixed solution includes at least an indium alkoxide and a zinc alkoxide in a solvent. The film made from the mixed solution on the substrate is cured by thermal-annealing in a water vapor atmosphere, at a temperature range of, for example, 210 to 275 degrees Celsius, inclusive.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: November 11, 2014
    Assignees: Panasonic Corporation, Cambridge Enterprise Ltd.
    Inventors: Yoshihisa Yamashita, Kulbinder Kumar Banger, Henning Sirringhaus
  • Publication number: 20140329355
    Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.
    Type: Application
    Filed: July 16, 2014
    Publication date: November 6, 2014
    Inventors: Min Yuan, David B. Mitzi, Wei Liu
  • Publication number: 20140326316
    Abstract: Thin films comprising crystalline Fe2XY4, wherein X is Si or Ge and Y is S or Se, are obtained by coating an ink comprised of nanoparticle precursors of Fe2XY4 and/or a non-particulate amorphous substance comprised of Fe, X and Y on a substrate surface and annealing the coating. The coated substrate thereby obtained has utility as a solar absorber material in thin film photovoltaic devices.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 6, 2014
    Applicant: Delaware State University
    Inventors: Daniela Rodica Radu, Cheng-Yu Lai