Light Patents (Class 257/431)
  • Patent number: 11335727
    Abstract: The image sensing device includes a pixel array including a plurality of unit pixels is arranged in rows and columns. Each of the plurality of unit pixels includes a photoelectric conversion element to generate charge carriers by converting light incident upon the photoelectric conversion element, a plurality of floating diffusion regions spaced apart from the photoelectric conversion element to hold the charge carriers, a plurality of circulation gates located at sides of the photoelectric conversion element in each of a first direction and a second direction perpendicular to the first direction, configured to create an electric field in different regions of the photoelectric conversion element based on circulation control signals, and configured to induce movement of the charge carriers, and a plurality of transfer gates located between the circulation gates, and configured to transfer the charge carriers generated by the photoelectric conversion element to a corresponding floating diffusion region.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: May 17, 2022
    Assignee: SK HYNIX INC.
    Inventors: Hyung June Yoon, Jae Hyung Jang, Hoon Moo Choi
  • Patent number: 11330068
    Abstract: Methods and systems for recording user operations on a cloud management platform are provided. According to one aspect, a method comprises recording one or more user operations on a cloud management platform, the one or more user operations being associated performing a task; storing data associated with the one or more user operations in a database; and executing the data associated with the one or more user operations, allowing replay of the one or more user operations on the cloud management platform to repeat the task. The one or more user operations on the computing platform correspond to one or more application programming interface (API) operations and executing the one or more user operations on the cloud management platform, causing the computing device to call the one or more API operations to complete the task on the cloud management platform.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: May 10, 2022
    Assignee: Alibaba Group Holding Limited
    Inventor: Junyin Wu
  • Patent number: 11309443
    Abstract: A photosensitive module is provided. The photosensitive module includes a base, an integrated package substrate, and a photosensitive element. The integrated package substrate is connected to the base. The integrated package substrate has a plurality of first electronic components, and the first electronic components are housed inside the integrated package substrate without being exposed to external environment. The photosensitive element is connected to the integrated package substrate, and the photosensitive element is configured to receive a light beam traveling along an optical axis.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: April 19, 2022
    Assignee: TDK Taiwan Corp.
    Inventors: Chen-Er Hsu, Sin-Jhong Song, Chi-Fu Wu, Hao-Yu Wu, Tsutomu Fukai, Ming-Hung Wu
  • Patent number: 11309342
    Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor including a dummy vertical transistor structure underlying a photodetector. The pixel sensor includes a substrate having a front-side surface opposite a back-side surface. The photodetector is disposed within the substrate. A deep trench isolation (DTI) structure extends from the back-side surface of the substrate to a first point below the back-side surface. The DTI structure wraps around an outer perimeter of the photodetector. The dummy vertical transistor structure is laterally spaced between inner sidewalls of the DTI structure. The dummy vertical transistor structure includes a dummy vertical gate electrode having a dummy conductive body and a dummy embedded conductive structure. The dummy embedded conductive structure extends from the front-side surface of the substrate to a second point vertically above the first point and the dummy conductive body extends along the front-side surface of the substrate.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou
  • Patent number: 11302853
    Abstract: A semiconductor device package provided in an embodiment comprises: first and second frames spaced apart from each other; a body disposed between the first and second frames; and a semiconductor device disposed on the first and the second frame and comprising a semiconductor layer and a first and a second electrode on the semiconductor layer, wherein the first and the second frame comprise a first metal layer having a plurality of pores, and the first metal layer of the first and the second frame may comprise coupling portions in regions where the first metal layer overlaps the first and the second electrode, respectively.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: April 12, 2022
    Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Ki Seok Kim, Hee Jeong Park, June O Song, Chang Man Lim
  • Patent number: 11281028
    Abstract: Disclosed herein are systems and architecture for thermal waveguide-based phase shifters which improve thermal efficiency by having multi-pass waveguides arranged under the heating element in a serpentine fashion, with the waveguides having mismatched propagation constants. The combination allows for an increase in phase shift without increasing the length or the power consumption of the resistive heating element by increasing the total length of waveguide being heated by a singular heating element.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: March 22, 2022
    Assignee: VOYANT PHOTONICS, INC.
    Inventors: Christopher T. Phare, Steven A. Miller, Viraj Shah
  • Patent number: 11237327
    Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: February 1, 2022
    Assignee: Micron Technology, Inc.
    Inventor: Roy E. Meade
  • Patent number: 11233092
    Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: January 25, 2022
    Assignee: SONY CORPORATION
    Inventors: Tetsuji Yamaguchi, Atsushi Toda, Itaru Oshiyama
  • Patent number: 11211300
    Abstract: To more securely hold reliability of an electronic component. There is provided an electronic component including a base material having a main face, at least one wiring formed on the main face of the base material, at least one pad provided at each end of the at least one wiring on the main face of the base material, a resist part formed to cover the at least one wiring on the main face of the base material, and a chip flip-chip mounted on the main face of the base material and connected to the base material via a bump bonded to the at least one pad, in which the resist part has a pad opening configured to expose the at least one pad bonded with the bump, and a circulation groove formed to be connected to the pad opening at one end as a connection end to the pad opening.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: December 28, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Ryo Itotani, Yuta Momiuchi, Hirokazu Nakayama, Tooru Kai, Miyoshi Togawa
  • Patent number: 11196947
    Abstract: A matrix-array optical sensor including individual detection cells each including at least one photodiode operating in photovoltaic mode, a first amplifier stage connected directly or indirectly to the photodiode and a capacitance connected directly or indirectly to the output of the first amplifier stage and the voltage of which varies with the illuminance on the photodiode, the sensor being arranged to a ensure a one-way flow of current to or from said capacitance in order to bring the latter to a voltage corresponding to an extremum of the illuminance during an operating cycle of the photodiode.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: December 7, 2021
    Assignee: New Imaging Technologies
    Inventor: Yang Ni
  • Patent number: 11189605
    Abstract: A transparent display comprises a display substrate having a display area and a bezel area adjacent to each of at least one corresponding side of the display area. The display substrate is at least partially transparent. Light-controlling elements are disposed in, on, or over the display substrate in the display area. Display wires are disposed in, on, or over the display substrate in the display area. The display wires are electrically connected to the light-controlling elements. Bezel wires are disposed in, on, or over the display substrate in the bezel area, the bezel wires electrically connected to respective ones of the display wires. A bezel transparency in the bezel area is greater than or equal to a display transparency in the display area.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: November 30, 2021
    Assignee: X Display Company Technology Limited
    Inventors: Christopher Andrew Bower, Matthew Meitl, Brook Raymond, Erich Radauscher
  • Patent number: 11181689
    Abstract: Photonic devices include a photonic assembly and a substrate coupled to the photonic assembly. The photonic assembly includes a photonic die and an optical device coupled to the photonic die with an adhesive to form an optical connection between the optical device and the photonic die. The photonic assembly is coupled to the photonic assembly by reflowing a plurality of solder connections at temperature that is less than a cure temperature of the adhesive.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: November 23, 2021
    Assignee: Cisco Technology, Inc.
    Inventors: Sandeep Razdan, Vipulkumar K. Patel, Aparna R. Prasad
  • Patent number: 11146718
    Abstract: A camera assembly embedded in an electronic device may include a plurality of camera modules, and a supporting frame configured to support the plurality of camera modules. At least one of the plurality of camera modules includes a lens driving assembly configured to move a lens barrel, a lens housing configured to accommodate the lens barrel and the lens driving assembly, a first circuit board on which an image sensor is provided, and a conductive connecting part configured to electrically connect the first circuit board and the lens driving assembly. The supporting frame includes a metal body configured to surround at least portions of edges of the lens housing, and a short-circuit prevention part provided on a surface of the metal body facing the conductive connecting part. The short-circuit prevention part includes a non-conductive material to block electrical contact between the metal body and the conductive connecting part.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: October 12, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kiem Ta Van, Vuong Nguyen Trong, Anh Tran Tuan, Anh Nguyen Tuan, Duong Nguyen Van
  • Patent number: 11129555
    Abstract: The present invention provides a device for measuring biological information including a sensor array, wherein the sensor array includes a plurality of sensors that are either sensors for amplifying photoreactivity or sensors forming an island network connected by a plurality of multi-channels and, in the device, the average value of biological information about the skin tissues is measured based on values output from the sensor array, and a method of measuring biological information using the device.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: September 28, 2021
    Assignees: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Korea Electronics Technology Institute
    Inventors: Sun Kook Kim, Sung Ho Lee, Min Goo Lee, Hyuk Sang Jung, Min Jung Kim, Young Ki Hong, Won Geun Song
  • Patent number: 11101408
    Abstract: Components and methods containing one or more light emitter devices, such as light emitting diodes (LEDs) or LED chips, are disclosed. In one aspect, a light emitter device component can include inner walls forming a recess defining an opening such that surface area outside of the opening of the recess is less than or equal to a threshold ratio of overall surface area. In one aspect, the light emitter device component can include a ceramic body mounted directly or indirectly on the ceramic body. Components disclosed herein can result in improved light extraction and thermal management.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: August 24, 2021
    Assignee: CreeLED, Inc.
    Inventor: Christopher P. Hussell
  • Patent number: 11081657
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: August 3, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi Wada, Isao Takasu, Rei Hasegawa, Fumihiko Aiga
  • Patent number: 11067765
    Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: July 20, 2021
    Assignee: Cisco Technology, Inc.
    Inventors: Prakash B. Gothoskar, Vipulkumar K. Patel, Soha Namnabat, Ravi S. Tummidi
  • Patent number: 11056606
    Abstract: The present invention teaches a structure of a photodetector and the method of making thereof. A photodetector inaccordance of the present invention is easy to fabricate, can be fabricated through low temperature processes, has high responsivity, high switching speed and high active area to device area ratio, is able to operate under photovotaic mode or reverse bias conditions.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: July 6, 2021
    Assignee: Visionary Semiconductor Inc.
    Inventors: Zhen Gao, Navid Mohammad Sadeghi Jahed, Siva Sivoththaman
  • Patent number: 11056608
    Abstract: An infrared detection film includes a gate electrode, a gate insulating layer, a majority-carrier channel layer, at least one drain terminal, at least one source terminal, and a photovoltaic semiconductor layer. The gate insulating layer is formed on the gate electrode. The majority-carrier channel layer is formed on the gate insulating layer. Each of the at least one drain terminal and the at least one source terminal is disposed on the majority-carrier channel layer and is spaced apart from the gate electrode. The photovoltaic semiconductor layer is disposed on an exposed portion of the majority-carrier channel layer exposed between the at least one drain terminal and the at least one source terminal.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: July 6, 2021
    Assignee: SHANGHAI HARVEST INTELLIGENCE TECHNOLOGY CO., LTD.
    Inventor: Jiandong Huang
  • Patent number: 11037972
    Abstract: The present disclosure relates to an imaging device, an imaging apparatus, and an electronic device capable of light-shielding a charge accumulation unit at low cost, while maintaining a charge transfer path from a photodiode to a charge accumulation unit. A depth of a trench that forms a trench buried film having a light-shielding characteristic for preventing color mixture of the photodiodes is adjusted according to a contact amount of a reactive gas by adjusting, among the shapes of a photomask pattern, a width of the trench through which the reactive gas flows or the number of intersections of the trenches at a portion in which the trench buried film is formed. As a result, the trench buried films having a plurality of depths can be formed by a single dry etching with one mask pattern, and the manufacturing cost is reduced. Application to an imaging device is possible.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: June 15, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Koji Neya
  • Patent number: 10998361
    Abstract: An image-sensor package includes a cover glass, an image sensor, and an integrated circuit. The cover glass has a cover-glass bottom surface, to which the image sensor is bonded. The integrated circuit is beneath the cover-glass bottom surface, adjacent to the image sensor, and electronically connected to the image sensor. A method for packaging an image sensor includes attaching an image sensor to a cover-glass bottom surface of a cover glass, a light-sensing region of the image sensor facing the cover-glass bottom surface. The method also includes attaching an integrated circuit to the cover-glass bottom surface, a top IC-surface of the integrated circuit facing the cover-glass bottom surface.
    Type: Grant
    Filed: September 22, 2018
    Date of Patent: May 4, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wei-Feng Lin, Chun-Sheng Fan
  • Patent number: 10978597
    Abstract: A sensor includes a printed circuit board; at least one semiconductor chip arranged on the printed circuit board and includes a front-side contact, wherein the semiconductor chip is a radiation-detecting semiconductor chip; an embedding layer arranged on the printed circuit board and laterally adjoining the at least one semiconductor chip; and a contact layer connected to the front-side contact of the at least one semiconductor chip.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: April 13, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Dirk Becker, Matthias Sperl
  • Patent number: 10973425
    Abstract: The present invention describes vertically stacked and hermetically sealed implantable pressure sensor devices for measuring a physiological signal. The implantable device comprises multiple layers, including a first wafer having a pressure sensor configured to measure the physiological signal and a second wafer having at least a digitizing integrated circuit. The first wafer is vertically stacked or disposed over the second wafer so as to form a hermetic seal. The device may include one or more additional layers adapted for energy storage and transfer, such as a third layer having a super-capacitor and a fourth layer having a thin film battery.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: April 13, 2021
    Assignee: InjectSense, Inc.
    Inventor: Ariel Cao
  • Patent number: 10964737
    Abstract: A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface; a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: March 30, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hideki Minari, Shunsuke Maruyama
  • Patent number: 10965369
    Abstract: Photonically integrated normal incidence photodetectors (NIPDs) and associated in-plane waveguide structures optically coupled to the NIPDs can be configured to allow for both in-plane and normal-incidence detection. In photonic circuits with light-generation capabilities, such as integrated optical transceivers, the ability of the NIPDs to detect in-plane light is used, in accordance with some embodiments, to provide self-test functionality.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: March 30, 2021
    Assignee: Juniper Networks, Inc.
    Inventors: John Parker, Brian Robert Koch, Gregory Alan Fish, Hyundai Park
  • Patent number: 10950671
    Abstract: A method for manufacturing a flexible touch panel, a flexible touch panel and a flexible touch device are provided. The method for manufacturing the flexible touch panel includes: forming a first indium tin oxide (ITO) film layer on a flexible base layer attached to a transparent substrate via an optical adhesive layer; and patterning the first ITO film layer to form a touch electrode of the flexible touch panel.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: March 16, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ting Zeng, Qicheng Chen, Hui Chen, Shichao Fei, Yangjie Li, Wanru Dong
  • Patent number: 10872836
    Abstract: A package structure and method of manufacturing is provided, whereby heat dissipating features are provided for heat dissipation. Heat dissipating features include conductive vias formed in a die stack, thermal chips, and thermal metal bulk, which can be bonded to a wafer level device. Hybrid bonding including chip to chip, chip to wafer, and wafer to wafer provides thermal conductivity without having to traverse a bonding material, such as a eutectic material. Plasma dicing the package structure can provide a smooth sidewall profile for interfacing with a thermal interface material.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: December 22, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen
  • Patent number: 10872915
    Abstract: An optical package structure includes a substrate, an optical element, a spacer and an encapsulant. The substrate has a top surface. The optical element is disposed adjacent to the top surface of the substrate and has a first height H1. The spacer surrounds the optical element and has a top surface. A distance between the top surface of the substrate and the top surface of the spacer is defined as a second height H2. The encapsulant is disposed between the optical element and the spacer, and has a third height H3 at a position adjacent to the optical element. The encapsulant covers at least a portion of the optical element. The optical element is exposed from the encapsulant, and H2>H1?H3.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: December 22, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chia Yun Hsu, Ying-Chung Chen
  • Patent number: 10861884
    Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: December 8, 2020
    Assignee: ARTILUX, INC.
    Inventors: Szu-Lin Cheng, Shu-Lu Chen
  • Patent number: 10854810
    Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: December 1, 2020
    Assignee: Qorvo US, Inc.
    Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
  • Patent number: 10841526
    Abstract: An imaging device including a first imaging cell having a first photoelectric converter including a first electrode, a second electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, and a first reset transistor one of a source and a drain of which is coupled to the first electrode; and a second imaging cell having a second photoelectric converter including a third electrode, a fourth electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, and a second reset transistor one of a source and a drain of which is coupled to the third electrode. The imaging device further including a first voltage supply circuitry to supply a first voltage to the first reset transistor; and a second voltage supply circuitry to supply a second voltage different from the first voltage to the second reset transistor.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: November 17, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Takeyoshi Tokuhara, Sanshiro Shishido, Masaaki Yanagida
  • Patent number: 10818710
    Abstract: An image sensor may include a pixel array including different pixel blocks where a pixel block includes a block of adjacent unit pixels each unit responsive to light to produce photo-generated charges, a floating diffusion region disposed at a center of each unit pixel to receive the photo-generated charges, and transfer gates formed between the floating diffusion region and the unit pixel to control the transfer of the photo-generated charges. Each the pixel block may include an extra floating diffusion region at a center of the pixel block to interface with each of the adjacent unit pixels with the pixel block to photo-generated charges from each of the adjacent unit pixels and extra transfer gates that are formed between the extra floating diffusion region and the adjacent unit pixels to control the transfer of the photo-generated charges from the adjacent unit pixels to the extra floating diffusion region.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 27, 2020
    Assignee: SK hynix Inc.
    Inventor: Sung-Woo Lim
  • Patent number: 10757845
    Abstract: A high-frequency component includes a wiring substrate, a component mounted on an upper surface of the wiring substrate, a columnar member formed of a conductive resin and standing on the upper surface of the wiring substrate in a state of a lower end portion of the columnar member being fixed to the upper surface of the wiring substrate, and a shield case covering the component and the columnar member. The shield case has a lid plate disposed so as to face the upper surface of the wiring substrate and a side plate extending from an edge of the lid plate toward the upper surface of the wiring substrate, and an upper end portion of the columnar member is fixed to each of four corner portions of the lid plate, when viewed in a direction perpendicular to the upper surface of the wiring substrate.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: August 25, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yoshikazu Yagi, Kazushige Sato, Akihiro Hara, Noboru Morioka, Nobumitsu Amachi
  • Patent number: 10756228
    Abstract: The present disclosure relates to a sensor comprising: an array of photodetectors comprising a first subarray of at least one photodetector and a second subarray of at least one photodetector; a first optical arrangement to direct incoming photons toward the first subarray; and a second optical arrangement to direct incoming photons toward the second subarray.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: August 25, 2020
    Assignee: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
    Inventor: James Peter Drummond Downing
  • Patent number: 10735635
    Abstract: Systems and methods for implementing array cameras configured to perform super-resolution processing to generate higher resolution super-resolved images using a plurality of captured images and lens stack arrays that can be utilized in array cameras are disclosed. Lens stack arrays in accordance with many embodiments of the invention include lens elements formed on substrates separated by spacers, where the lens elements, substrates and spacers are configured to form a plurality of optical channels, at least one aperture located within each optical channel, at least one spectral filter located within each optical channel, where each spectral filter is configured to pass a specific spectral band of light, and light blocking materials located within the lens stack array to optically isolate the optical channels.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: August 4, 2020
    Assignee: FotoNation Limited
    Inventor: Jacques Duparre
  • Patent number: 10714521
    Abstract: To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: July 14, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yuhi Yorikado, Atsushi Toda, Susumu Inoue
  • Patent number: 10710875
    Abstract: In described examples, a device mounted on a substrate includes an encapsulant. In at least one example, an encapsulant barrier is deposited along a scribe line, along which the substrate is singulatable. To encapsulate one or more terminals of the substrate, an encapsulant is deposited between the encapsulant barrier and an edge of the device parallel to the encapsulant barrier.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: July 14, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Jane Qian Liu, Gary Philip Thomson, Richard Allen Richter
  • Patent number: 10690755
    Abstract: A plurality of pixels of a solid-state imaging device include: a photoelectric converter which receives light from an object and converts the light into charge; a plurality of readers which read the charge from the photoelectric converter; a plurality of charge accumulators which accumulate the charge of the photoelectric converter; and a transfer controller which performs a transfer control including controlling whether the charge is transferred or blocked from being transferred. The readers read the charge of the photoelectric converter to the charge accumulators, the plurality of pixels include at least a first pixel and a second pixel, and the transfer controller performs the transfer control to cause addition of the charge read from each of the first pixel and the second pixel.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: June 23, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Sei Suzuki, Tohru Yamada, Yasuyuki Shimizu
  • Patent number: 10670724
    Abstract: A light detection and ranging (LIDAR) time of flight (TOF) sensor for inputting and outputting simultaneously and 3-dimensional laser scanning system including the same are disclosed. In one aspect, the sensor includes a substrate and a light receiving element array provided on the substrate and including a plurality of light receiving elements. The sensor also includes readout circuits configured to receive electrical signals from the light receiving elements and perform signal processing on the electrical signals. The sensor further includes metal lines disposed on the light receiving element array in parallel, provided to correspond to the number of the light receiving elements, and configured to connect the light receiving elements to the readout circuits in one-to-one correspondence.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: June 2, 2020
    Assignee: Korea Electronics Technology Institute
    Inventors: Yeon Kug Moon, Young Bo Shim
  • Patent number: 10672923
    Abstract: A front electrode for solar cells and a solar cell, the front electrode including a stepped structure at an outermost surface thereof, wherein the stepped structure is composed of n stages, in which n is an integer of 3 or greater, and an nth stage has a smaller cross-sectional area than an (n?1)th stage such that the (n?1)th stage is partially exposed, and the stepped structure occupies about 5% to about 100% of a total surface area of the outermost surface.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 2, 2020
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Dong Suk Kim, Hee In Nam, Sang Hee Park, Seok Hyun Jung, Jae Hwi Cho
  • Patent number: 10651225
    Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: May 12, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 10651231
    Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: May 12, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Junji Iwata
  • Patent number: 10644185
    Abstract: Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: May 5, 2020
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Yoshiki Sakurai, Osamu Morohara, Hiromi Fujita
  • Patent number: 10636822
    Abstract: In a photoelectric-conversion element having a large light receiving region for a high-speed transfer, and a solid-state image sensor including the photoelectric-conversion element, the photoelectric-conversion element includes first to eighth charge read-out regions, which are provided at positions symmetric with respect to a center position of a light receiving region and first to eighth field-control electrodes, which are arranged on both sides of charge-transport paths extending from the center position of the light receiving region to the first to eighth charge read-out regions, respectively, and change depletion potentials of the charge-transport paths and the octuple charge-transfer channels.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: April 28, 2020
    Assignee: National University Corporation Shizuoka University
    Inventors: Shoji Kawahito, Min-Woong Seo, Keita Yasutomi, Yuya Shirakawa
  • Patent number: 10629641
    Abstract: A fan-out sensor package includes: a first connection member having a through-hole and including a first wiring layer; a sensor chip disposed in the through-hole; an optical lens disposed in the through-hole and attached to the sensor chip; an encapsulant encapsulating at least portions of the first connection member, the sensor chip, and the optical lens; and a second connection member including a first insulating layer disposed on the first connection member, the sensor chip, and the optical lens, a redistribution layer disposed on the first insulating layer, and a second insulating layer disposed on the first insulating layer and covering the redistribution layer. The redistribution layer electrically connects the first wiring layer and the connection pads, the first insulating layer has a cavity exposing at least a portion of one surface of the optical lens, and one side of the cavity is closed by the second insulating layer.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: April 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Jae Kul Lee
  • Patent number: 10598967
    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: March 24, 2020
    Assignee: Cisco Technology, Inc.
    Inventors: Donald Adams, Prakash B. Gothoskar, Vipulkumar Patel, Mark Webster
  • Patent number: 10593615
    Abstract: A chip package and manufacturing method is disclosed. In one example, the method includes forming a carrier wafer with a plurality of trenches, each trench being at least partially covered with an electrically conductive sidewall coating. A semiconductor wafer is bonded on a front side of the carrier wafer. An electrically conductive connection structure is formed, including at least partially bridging a gap between the electrically conductive sidewall coating and an integrated circuit element of a respective one of the electronic chips. Material on a backside of the carrier wafer is removed to singularize the bonded wafers at the trenches into a plurality of semiconductor devices.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: March 17, 2020
    Assignee: Infineon Technologies AG
    Inventors: Andre Schmenn, Damian Sojka
  • Patent number: 10510790
    Abstract: A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Szu-Ying Chen, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 10509244
    Abstract: Structures for an optical switch, structures for an optical router, and methods of fabricating a structure for an optical switch. A phase change layer is arranged proximate to a waveguide core, and a heater is formed proximate to the phase change layer. The phase change layer is composed of a phase change material having a first state with a first refractive index at a first temperature and a second state with a second refractive index at a second temperature. The heater is configured to selectively transfer heat to the phase change layer for transitioning between the first state and the second state.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: December 17, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Steven M. Shank, Anthony K. Stamper, John J. Ellis-Monaghan, Vibhor Jain, John J. Pekarik
  • Patent number: 10498981
    Abstract: An imaging device includes: a first unit pixel cell including first and second electrodes, a first photoelectric conversion layer therebetween, and a first signal detection circuit connected to the first electrode; and a voltage supply circuit supplying a voltage to the second electrode. The voltage supply circuit forms exposure periods and one or more non-exposure periods that separate the exposure periods from each other by changing the voltage. The exposure and non-exposure periods are included in each of a first frame period and a second frame period subsequent to the first frame period. Timing of a start and an end of each of the exposure periods in the first frame period is the same as that of each of the exposure periods in the second frame period. Magnitude of change of the voltage in the first frame period is different from that of the voltage in the second frame period.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: December 3, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventor: Yasuo Miyake