Light Patents (Class 257/431)
  • Patent number: 11688640
    Abstract: Systems and methods for manufacturing flexible electronics are described herein. Methods in accordance with embodiments of the present technology can include disposing electrical features, such as thin film circuits, on a first side of a glass substrate, applying a first protective material over the electronic features, and exposing a second side of the glass substrate to a chemical etching tank to thin the glass substrate to a predetermined thickness. The thinning process can remove cracks and other defects from the second side of the glass substrate and enhance the flexibility of the electronic assembly. A second protective material can be disposed on the second side of the thinned glass substrate to maintain the enhanced backside surface of the glass substrate. In some embodiments, the method also includes singulating the plurality of electronic features into individual electronic components by submerging the electronic assembly into a chemical etching tank.
    Type: Grant
    Filed: January 19, 2022
    Date of Patent: June 27, 2023
    Assignee: NEXT Biometrics Group ASA
    Inventors: Tian Xiao, King Hong Kwan, Sheng-Hsiang Hung, Mark W. Naumann
  • Patent number: 11676976
    Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: June 13, 2023
    Assignee: Attollo Engineering, LLC
    Inventors: Jonathan Geske, Andrew Hood, Michael MacDougal
  • Patent number: 11677036
    Abstract: A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: June 13, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeongyub Lee, Woong Ko, Changseung Lee, Hongkyu Park, Chanwook Baik, Hongseok Lee, Wonjae Joo
  • Patent number: 11670659
    Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: June 6, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Taiichiro Watanabe, Fumihiko Koga, Kyosuke Ito, Hideaki Togashi, Yusaku Sugimori
  • Patent number: 11658274
    Abstract: A component is disclosed. In an embodiment the component includes a light-emitting element and a structured layer having an optical functionality, wherein the structured layer is arranged on the light-emitting element.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: May 23, 2023
    Assignee: TDK ELECTRONICS AG
    Inventors: Thomas Feichtinger, Stefan Sax
  • Patent number: 11653508
    Abstract: A polymer solar cell includes a photoactive layer, a cathode electrode, and an anode electrode. The photoactive layer includes a polymer layer and a carbon nanotube layer. The polymer layer includes a first polymer surface and a second polymer surface opposite to the first polymer surface. A portion of the carbon nanotube layer is embedded in the polymer layer, and another portion of the carbon nanotube layer is exposed from the polymer layer. The cathode electrode is located a surface of the carbon nanotube layer away from the polymer layer. The anode electrode is located on the first polymer surface and spaced apart from the carbon nanotube layer. The entire second polymer surface is exposed.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: May 16, 2023
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Wen Ning, Peng Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 11639332
    Abstract: Provided herein are azo prodrugs of small-molecule isoindoline-1,3-diones and isoindoles anti-inflammatory inhibitors according to formula IA, in particular PDE4 inhibitors, which prodrugs can be administered orally to a subject in need thereof, whereby the prodrugs are cleaved in the colon and the PDE4 inhibitor released.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: May 2, 2023
    Assignees: AMGEN (EUROPE) GMBH
    Inventor: William R. Baker
  • Patent number: 11605657
    Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: March 14, 2023
    Assignee: SK hynix Inc.
    Inventor: Pyong-Su Kwag
  • Patent number: 11605752
    Abstract: Photodetectors using photonic crystals (PhCs) in polysilicon film that include an in-plane resonant defect. A biatomic photodetector includes an optical defect mode that is confined from all directions in the plane of the PhC by the photonic bandgap structure. The coupling of the resonance (or defect) mode to out-of-plane radiation can be adjusted by the design of the defect. Further, a “guided-mode resonance” (GMR) photodetector provides in-plane resonance through a second-order grating effect in the PhC. Absorption of an illumination field can be enhanced through this resonance.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: March 14, 2023
    Assignee: Massachusetts Institute of Technology
    Inventors: Amir H. Atabaki, Rajeev J. Ram, Ebrahim Dakhil Al Johani
  • Patent number: 11581473
    Abstract: A superconducting junction comprises: a first layer and a second layer of superconducting material; a tunneling layer of insulating material disposed between the first layer and the second layer of the superconducting material; and a layer of thermally conducting, non-superconducting material disposed between the first layer and the second layer of the superconducting material, the non-superconducting layer being in contact with either the first layer or the second layer of superconducting material.
    Type: Grant
    Filed: December 27, 2020
    Date of Patent: February 14, 2023
    Assignee: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
    Inventor: Mikko Kiviranta
  • Patent number: 11581449
    Abstract: The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: February 14, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Younes Benhammou, Dominique Golanski, Denis Rideau
  • Patent number: 11575060
    Abstract: A light-receiving element, comprising a plurality of photodiodes formed by stacking in this sequence, a lower reflection mirror, a resonator including a photoelectric conversion layer, and an upper reflection mirror on a semiconductor substrate, wherein the plurality of photodiodes share the semiconductor substrate and the lower reflection mirror, the plurality of photodiodes includes a first photodiode having a resonance wavelength ?1 and a second photodiode having a resonance wavelength ?2 that is larger than the resonance wavelength ?1, and a reflectance of the lower reflection mirror has a first peak corresponding to the resonance wavelength ?1 and a second peak corresponding to the resonance wavelength ?2.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: February 7, 2023
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Uchida, Takako Suga
  • Patent number: 11572621
    Abstract: Disclosed herein is system and method for protective diamond coatings. The method may include the steps of cleaning and seeding a substrate, depositing a crystalline diamond layer on the substrate, etching the substrate; and attaching the substrate to protected matter. The crystalline diamond layer may reflect at least 28 percent of electromagnetic energy in a beam having a bandwidth of 800 nanometer to 1 micrometer.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: February 7, 2023
    Assignee: AKHAN SEMICONDUCTOR, INC.
    Inventors: Adam Khan, Robert Polak, Kiran Kumar Kovi
  • Patent number: 11532651
    Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: December 20, 2022
    Assignee: SONY GROUP CORPORATION
    Inventors: Hiroaki Ishiwata, Harumi Tanaka, Atsuhiro Ando
  • Patent number: 11515355
    Abstract: A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: November 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LIMITED
    Inventors: Yeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
  • Patent number: 11508856
    Abstract: A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: November 22, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Koichi Kokubun, Mitsuhiro Sengoku
  • Patent number: 11395408
    Abstract: Wafer level passive array packages and modules are described. In an embodiment, a module includes a circuit board, and a package mounted on the circuit board in which the package includes a plurality of passive components bonded to a bottom side of the die and a plurality of landing pads of the circuit board.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: July 19, 2022
    Assignee: Apple Inc.
    Inventors: Scott D. Morrison, Karthik Shanmugam, Raymundo M. Camenforte, Rakshit Agrawal, Flynn P. Carson, Kiranjit Dhaliwal
  • Patent number: 11374049
    Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: June 28, 2022
    Assignee: SONY CORPORATION
    Inventors: Taku Umebayashi, Keiji Tatani, Hajime Inoue, Ryuichi Kanamura
  • Patent number: 11335727
    Abstract: The image sensing device includes a pixel array including a plurality of unit pixels is arranged in rows and columns. Each of the plurality of unit pixels includes a photoelectric conversion element to generate charge carriers by converting light incident upon the photoelectric conversion element, a plurality of floating diffusion regions spaced apart from the photoelectric conversion element to hold the charge carriers, a plurality of circulation gates located at sides of the photoelectric conversion element in each of a first direction and a second direction perpendicular to the first direction, configured to create an electric field in different regions of the photoelectric conversion element based on circulation control signals, and configured to induce movement of the charge carriers, and a plurality of transfer gates located between the circulation gates, and configured to transfer the charge carriers generated by the photoelectric conversion element to a corresponding floating diffusion region.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: May 17, 2022
    Assignee: SK HYNIX INC.
    Inventors: Hyung June Yoon, Jae Hyung Jang, Hoon Moo Choi
  • Patent number: 11330068
    Abstract: Methods and systems for recording user operations on a cloud management platform are provided. According to one aspect, a method comprises recording one or more user operations on a cloud management platform, the one or more user operations being associated performing a task; storing data associated with the one or more user operations in a database; and executing the data associated with the one or more user operations, allowing replay of the one or more user operations on the cloud management platform to repeat the task. The one or more user operations on the computing platform correspond to one or more application programming interface (API) operations and executing the one or more user operations on the cloud management platform, causing the computing device to call the one or more API operations to complete the task on the cloud management platform.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: May 10, 2022
    Assignee: Alibaba Group Holding Limited
    Inventor: Junyin Wu
  • Patent number: 11309443
    Abstract: A photosensitive module is provided. The photosensitive module includes a base, an integrated package substrate, and a photosensitive element. The integrated package substrate is connected to the base. The integrated package substrate has a plurality of first electronic components, and the first electronic components are housed inside the integrated package substrate without being exposed to external environment. The photosensitive element is connected to the integrated package substrate, and the photosensitive element is configured to receive a light beam traveling along an optical axis.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: April 19, 2022
    Assignee: TDK Taiwan Corp.
    Inventors: Chen-Er Hsu, Sin-Jhong Song, Chi-Fu Wu, Hao-Yu Wu, Tsutomu Fukai, Ming-Hung Wu
  • Patent number: 11309342
    Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor including a dummy vertical transistor structure underlying a photodetector. The pixel sensor includes a substrate having a front-side surface opposite a back-side surface. The photodetector is disposed within the substrate. A deep trench isolation (DTI) structure extends from the back-side surface of the substrate to a first point below the back-side surface. The DTI structure wraps around an outer perimeter of the photodetector. The dummy vertical transistor structure is laterally spaced between inner sidewalls of the DTI structure. The dummy vertical transistor structure includes a dummy vertical gate electrode having a dummy conductive body and a dummy embedded conductive structure. The dummy embedded conductive structure extends from the front-side surface of the substrate to a second point vertically above the first point and the dummy conductive body extends along the front-side surface of the substrate.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou
  • Patent number: 11302853
    Abstract: A semiconductor device package provided in an embodiment comprises: first and second frames spaced apart from each other; a body disposed between the first and second frames; and a semiconductor device disposed on the first and the second frame and comprising a semiconductor layer and a first and a second electrode on the semiconductor layer, wherein the first and the second frame comprise a first metal layer having a plurality of pores, and the first metal layer of the first and the second frame may comprise coupling portions in regions where the first metal layer overlaps the first and the second electrode, respectively.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: April 12, 2022
    Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Ki Seok Kim, Hee Jeong Park, June O Song, Chang Man Lim
  • Patent number: 11281028
    Abstract: Disclosed herein are systems and architecture for thermal waveguide-based phase shifters which improve thermal efficiency by having multi-pass waveguides arranged under the heating element in a serpentine fashion, with the waveguides having mismatched propagation constants. The combination allows for an increase in phase shift without increasing the length or the power consumption of the resistive heating element by increasing the total length of waveguide being heated by a singular heating element.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: March 22, 2022
    Assignee: VOYANT PHOTONICS, INC.
    Inventors: Christopher T. Phare, Steven A. Miller, Viraj Shah
  • Patent number: 11237327
    Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: February 1, 2022
    Assignee: Micron Technology, Inc.
    Inventor: Roy E. Meade
  • Patent number: 11233092
    Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: January 25, 2022
    Assignee: SONY CORPORATION
    Inventors: Tetsuji Yamaguchi, Atsushi Toda, Itaru Oshiyama
  • Patent number: 11211300
    Abstract: To more securely hold reliability of an electronic component. There is provided an electronic component including a base material having a main face, at least one wiring formed on the main face of the base material, at least one pad provided at each end of the at least one wiring on the main face of the base material, a resist part formed to cover the at least one wiring on the main face of the base material, and a chip flip-chip mounted on the main face of the base material and connected to the base material via a bump bonded to the at least one pad, in which the resist part has a pad opening configured to expose the at least one pad bonded with the bump, and a circulation groove formed to be connected to the pad opening at one end as a connection end to the pad opening.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: December 28, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Ryo Itotani, Yuta Momiuchi, Hirokazu Nakayama, Tooru Kai, Miyoshi Togawa
  • Patent number: 11196947
    Abstract: A matrix-array optical sensor including individual detection cells each including at least one photodiode operating in photovoltaic mode, a first amplifier stage connected directly or indirectly to the photodiode and a capacitance connected directly or indirectly to the output of the first amplifier stage and the voltage of which varies with the illuminance on the photodiode, the sensor being arranged to a ensure a one-way flow of current to or from said capacitance in order to bring the latter to a voltage corresponding to an extremum of the illuminance during an operating cycle of the photodiode.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: December 7, 2021
    Assignee: New Imaging Technologies
    Inventor: Yang Ni
  • Patent number: 11189605
    Abstract: A transparent display comprises a display substrate having a display area and a bezel area adjacent to each of at least one corresponding side of the display area. The display substrate is at least partially transparent. Light-controlling elements are disposed in, on, or over the display substrate in the display area. Display wires are disposed in, on, or over the display substrate in the display area. The display wires are electrically connected to the light-controlling elements. Bezel wires are disposed in, on, or over the display substrate in the bezel area, the bezel wires electrically connected to respective ones of the display wires. A bezel transparency in the bezel area is greater than or equal to a display transparency in the display area.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: November 30, 2021
    Assignee: X Display Company Technology Limited
    Inventors: Christopher Andrew Bower, Matthew Meitl, Brook Raymond, Erich Radauscher
  • Patent number: 11181689
    Abstract: Photonic devices include a photonic assembly and a substrate coupled to the photonic assembly. The photonic assembly includes a photonic die and an optical device coupled to the photonic die with an adhesive to form an optical connection between the optical device and the photonic die. The photonic assembly is coupled to the photonic assembly by reflowing a plurality of solder connections at temperature that is less than a cure temperature of the adhesive.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: November 23, 2021
    Assignee: Cisco Technology, Inc.
    Inventors: Sandeep Razdan, Vipulkumar K. Patel, Aparna R. Prasad
  • Patent number: 11146718
    Abstract: A camera assembly embedded in an electronic device may include a plurality of camera modules, and a supporting frame configured to support the plurality of camera modules. At least one of the plurality of camera modules includes a lens driving assembly configured to move a lens barrel, a lens housing configured to accommodate the lens barrel and the lens driving assembly, a first circuit board on which an image sensor is provided, and a conductive connecting part configured to electrically connect the first circuit board and the lens driving assembly. The supporting frame includes a metal body configured to surround at least portions of edges of the lens housing, and a short-circuit prevention part provided on a surface of the metal body facing the conductive connecting part. The short-circuit prevention part includes a non-conductive material to block electrical contact between the metal body and the conductive connecting part.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: October 12, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kiem Ta Van, Vuong Nguyen Trong, Anh Tran Tuan, Anh Nguyen Tuan, Duong Nguyen Van
  • Patent number: 11129555
    Abstract: The present invention provides a device for measuring biological information including a sensor array, wherein the sensor array includes a plurality of sensors that are either sensors for amplifying photoreactivity or sensors forming an island network connected by a plurality of multi-channels and, in the device, the average value of biological information about the skin tissues is measured based on values output from the sensor array, and a method of measuring biological information using the device.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: September 28, 2021
    Assignees: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Korea Electronics Technology Institute
    Inventors: Sun Kook Kim, Sung Ho Lee, Min Goo Lee, Hyuk Sang Jung, Min Jung Kim, Young Ki Hong, Won Geun Song
  • Patent number: 11101408
    Abstract: Components and methods containing one or more light emitter devices, such as light emitting diodes (LEDs) or LED chips, are disclosed. In one aspect, a light emitter device component can include inner walls forming a recess defining an opening such that surface area outside of the opening of the recess is less than or equal to a threshold ratio of overall surface area. In one aspect, the light emitter device component can include a ceramic body mounted directly or indirectly on the ceramic body. Components disclosed herein can result in improved light extraction and thermal management.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: August 24, 2021
    Assignee: CreeLED, Inc.
    Inventor: Christopher P. Hussell
  • Patent number: 11081657
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: August 3, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi Wada, Isao Takasu, Rei Hasegawa, Fumihiko Aiga
  • Patent number: 11067765
    Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: July 20, 2021
    Assignee: Cisco Technology, Inc.
    Inventors: Prakash B. Gothoskar, Vipulkumar K. Patel, Soha Namnabat, Ravi S. Tummidi
  • Patent number: 11056608
    Abstract: An infrared detection film includes a gate electrode, a gate insulating layer, a majority-carrier channel layer, at least one drain terminal, at least one source terminal, and a photovoltaic semiconductor layer. The gate insulating layer is formed on the gate electrode. The majority-carrier channel layer is formed on the gate insulating layer. Each of the at least one drain terminal and the at least one source terminal is disposed on the majority-carrier channel layer and is spaced apart from the gate electrode. The photovoltaic semiconductor layer is disposed on an exposed portion of the majority-carrier channel layer exposed between the at least one drain terminal and the at least one source terminal.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: July 6, 2021
    Assignee: SHANGHAI HARVEST INTELLIGENCE TECHNOLOGY CO., LTD.
    Inventor: Jiandong Huang
  • Patent number: 11056606
    Abstract: The present invention teaches a structure of a photodetector and the method of making thereof. A photodetector inaccordance of the present invention is easy to fabricate, can be fabricated through low temperature processes, has high responsivity, high switching speed and high active area to device area ratio, is able to operate under photovotaic mode or reverse bias conditions.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: July 6, 2021
    Assignee: Visionary Semiconductor Inc.
    Inventors: Zhen Gao, Navid Mohammad Sadeghi Jahed, Siva Sivoththaman
  • Patent number: 11037972
    Abstract: The present disclosure relates to an imaging device, an imaging apparatus, and an electronic device capable of light-shielding a charge accumulation unit at low cost, while maintaining a charge transfer path from a photodiode to a charge accumulation unit. A depth of a trench that forms a trench buried film having a light-shielding characteristic for preventing color mixture of the photodiodes is adjusted according to a contact amount of a reactive gas by adjusting, among the shapes of a photomask pattern, a width of the trench through which the reactive gas flows or the number of intersections of the trenches at a portion in which the trench buried film is formed. As a result, the trench buried films having a plurality of depths can be formed by a single dry etching with one mask pattern, and the manufacturing cost is reduced. Application to an imaging device is possible.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: June 15, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Koji Neya
  • Patent number: 10998361
    Abstract: An image-sensor package includes a cover glass, an image sensor, and an integrated circuit. The cover glass has a cover-glass bottom surface, to which the image sensor is bonded. The integrated circuit is beneath the cover-glass bottom surface, adjacent to the image sensor, and electronically connected to the image sensor. A method for packaging an image sensor includes attaching an image sensor to a cover-glass bottom surface of a cover glass, a light-sensing region of the image sensor facing the cover-glass bottom surface. The method also includes attaching an integrated circuit to the cover-glass bottom surface, a top IC-surface of the integrated circuit facing the cover-glass bottom surface.
    Type: Grant
    Filed: September 22, 2018
    Date of Patent: May 4, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wei-Feng Lin, Chun-Sheng Fan
  • Patent number: 10973425
    Abstract: The present invention describes vertically stacked and hermetically sealed implantable pressure sensor devices for measuring a physiological signal. The implantable device comprises multiple layers, including a first wafer having a pressure sensor configured to measure the physiological signal and a second wafer having at least a digitizing integrated circuit. The first wafer is vertically stacked or disposed over the second wafer so as to form a hermetic seal. The device may include one or more additional layers adapted for energy storage and transfer, such as a third layer having a super-capacitor and a fourth layer having a thin film battery.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: April 13, 2021
    Assignee: InjectSense, Inc.
    Inventor: Ariel Cao
  • Patent number: 10978597
    Abstract: A sensor includes a printed circuit board; at least one semiconductor chip arranged on the printed circuit board and includes a front-side contact, wherein the semiconductor chip is a radiation-detecting semiconductor chip; an embedding layer arranged on the printed circuit board and laterally adjoining the at least one semiconductor chip; and a contact layer connected to the front-side contact of the at least one semiconductor chip.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: April 13, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Dirk Becker, Matthias Sperl
  • Patent number: 10964737
    Abstract: A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface; a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: March 30, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hideki Minari, Shunsuke Maruyama
  • Patent number: 10965369
    Abstract: Photonically integrated normal incidence photodetectors (NIPDs) and associated in-plane waveguide structures optically coupled to the NIPDs can be configured to allow for both in-plane and normal-incidence detection. In photonic circuits with light-generation capabilities, such as integrated optical transceivers, the ability of the NIPDs to detect in-plane light is used, in accordance with some embodiments, to provide self-test functionality.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: March 30, 2021
    Assignee: Juniper Networks, Inc.
    Inventors: John Parker, Brian Robert Koch, Gregory Alan Fish, Hyundai Park
  • Patent number: 10950671
    Abstract: A method for manufacturing a flexible touch panel, a flexible touch panel and a flexible touch device are provided. The method for manufacturing the flexible touch panel includes: forming a first indium tin oxide (ITO) film layer on a flexible base layer attached to a transparent substrate via an optical adhesive layer; and patterning the first ITO film layer to form a touch electrode of the flexible touch panel.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: March 16, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ting Zeng, Qicheng Chen, Hui Chen, Shichao Fei, Yangjie Li, Wanru Dong
  • Patent number: 10872915
    Abstract: An optical package structure includes a substrate, an optical element, a spacer and an encapsulant. The substrate has a top surface. The optical element is disposed adjacent to the top surface of the substrate and has a first height H1. The spacer surrounds the optical element and has a top surface. A distance between the top surface of the substrate and the top surface of the spacer is defined as a second height H2. The encapsulant is disposed between the optical element and the spacer, and has a third height H3 at a position adjacent to the optical element. The encapsulant covers at least a portion of the optical element. The optical element is exposed from the encapsulant, and H2>H1?H3.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: December 22, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chia Yun Hsu, Ying-Chung Chen
  • Patent number: 10872836
    Abstract: A package structure and method of manufacturing is provided, whereby heat dissipating features are provided for heat dissipation. Heat dissipating features include conductive vias formed in a die stack, thermal chips, and thermal metal bulk, which can be bonded to a wafer level device. Hybrid bonding including chip to chip, chip to wafer, and wafer to wafer provides thermal conductivity without having to traverse a bonding material, such as a eutectic material. Plasma dicing the package structure can provide a smooth sidewall profile for interfacing with a thermal interface material.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: December 22, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen
  • Patent number: 10861884
    Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: December 8, 2020
    Assignee: ARTILUX, INC.
    Inventors: Szu-Lin Cheng, Shu-Lu Chen
  • Patent number: 10854810
    Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: December 1, 2020
    Assignee: Qorvo US, Inc.
    Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
  • Patent number: 10841526
    Abstract: An imaging device including a first imaging cell having a first photoelectric converter including a first electrode, a second electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, and a first reset transistor one of a source and a drain of which is coupled to the first electrode; and a second imaging cell having a second photoelectric converter including a third electrode, a fourth electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, and a second reset transistor one of a source and a drain of which is coupled to the third electrode. The imaging device further including a first voltage supply circuitry to supply a first voltage to the first reset transistor; and a second voltage supply circuitry to supply a second voltage different from the first voltage to the second reset transistor.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: November 17, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Takeyoshi Tokuhara, Sanshiro Shishido, Masaaki Yanagida
  • Patent number: 10818710
    Abstract: An image sensor may include a pixel array including different pixel blocks where a pixel block includes a block of adjacent unit pixels each unit responsive to light to produce photo-generated charges, a floating diffusion region disposed at a center of each unit pixel to receive the photo-generated charges, and transfer gates formed between the floating diffusion region and the unit pixel to control the transfer of the photo-generated charges. Each the pixel block may include an extra floating diffusion region at a center of the pixel block to interface with each of the adjacent unit pixels with the pixel block to photo-generated charges from each of the adjacent unit pixels and extra transfer gates that are formed between the extra floating diffusion region and the adjacent unit pixels to control the transfer of the photo-generated charges from the adjacent unit pixels to the extra floating diffusion region.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 27, 2020
    Assignee: SK hynix Inc.
    Inventor: Sung-Woo Lim