Inorganic Materials (epo) Patents (Class 257/E31.004)

  • Patent number: 10767112
    Abstract: The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q1, Q2, Q3, R1, R2, R3, R5, and X are defined within the specification.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: September 8, 2020
    Assignee: The Trustees of the Columbia University in the City of New York
    Inventors: Jonathan S. Owen, Mark P. Hendricks, Michael P. Campos, Gregory T. Cleveland, Ilan Jen-La Plante, Leslie Sachiyo Hamachi
  • Patent number: 10217888
    Abstract: Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: February 26, 2019
    Assignee: International Business Machines Corporation
    Inventors: Priscilla D. Antunez, Talia S. Gershon, Richard A. Haight, Teodor K. Todorov
  • Patent number: 9040816
    Abstract: Methods of forming a photovoltaic structures including nanoparticles are disclosed. The method includes electrospray deposition of nanoparticles. The nanoparticles can include TiO2 nanoparticles and quantum dots. In an example, the nanoparticles are formed on a flexible substrate. In various examples, the flexible substrate is light transparent. Photovoltaic structures and apparatus for forming photovoltaic structures are disclosed.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: May 26, 2015
    Assignee: Nanocopoeia, Inc.
    Inventor: Anand Gupta
  • Patent number: 8927434
    Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: January 6, 2015
    Assignee: Eastman Kodak Company
    Inventors: Carolyn R. Ellinger, David H. Levy, Shelby F. Nelson
  • Patent number: 8901555
    Abstract: A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: December 2, 2014
    Assignee: E Ink Holdings Inc.
    Inventors: Chia-Chun Yeh, Henry Wang, Wei-Chou Lan, Ted-Hong Shinn
  • Patent number: 8900907
    Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: December 2, 2014
    Assignees: Societe Francaise de Detecteurs Infrarouges-Sofradir, Centre National de la Recherche Scientifique
    Inventors: Christophe Pautet, Arnaud Etcheberry, Alexandre Causier, Isabelle Gerard
  • Patent number: 8791023
    Abstract: A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: July 29, 2014
    Assignee: Eastman Kodak Company
    Inventors: Carolyn R. Ellinger, David H. Levy, Shelby F. Nelson
  • Patent number: 8785235
    Abstract: A method and apparatus for forming a solar cell. The apparatus includes a housing defining a vacuum chamber and a rotatable substrate apparatus configured to hold a plurality of substrates on a plurality of surfaces wherein each of the plurality of surfaces are disposed facing an interior surface of the vacuum chamber. A first sputtering source is configured to deposit a plurality of absorber layer atoms of a first type over at least a portion of a surface of each one of the plurality of substrates. An evaporation source is disposed in a first subchamber of the vacuum chamber and configured to deposit a plurality of absorber layer atoms of a second type over at least a portion of the surface of each one of the plurality of substrates. A first isolation source is configured to isolate the evaporation source from the first sputtering source.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: July 22, 2014
    Assignee: TSMC Solar Ltd.
    Inventors: Edward Teng, Ying-Chen Chao, Chih-Jen Yang, Kuo-Jui Hsiao
  • Patent number: 8748296
    Abstract: A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: June 10, 2014
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana, Davood Shahrjerdi, Norma E. Sosa Cortes
  • Patent number: 8728854
    Abstract: A method for producing a semiconductor material, comprises a step of allowing impurity atoms, Ba atoms and Si atoms to react with each other, the impurity atoms being at least one atom selected from the group consisting of As atom, Sb atom, Bi atom and N atom; and a solar cell comprises the semiconductor material.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: May 20, 2014
    Assignee: Japan Science and Technology Agency
    Inventor: Takashi Suemasu
  • Patent number: 8674210
    Abstract: To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: March 18, 2014
    Assignee: Kyocera Corporation
    Inventors: Daisuke Nishimura, Toshifumi Sugawara, Ken Nishiura, Norihiko Matsushima, Yosuke Inomata, Hisao Arimune, Tsuyoshi Uesugi
  • Publication number: 20140060608
    Abstract: A photovoltaic device is presented. The device includes an intermediate layer disposed between an absorber layer and a back contact layer. The intermediate layer includes a metal or metalloid of Group 15 and oxygen. Method for making a photovoltaic device is also presented.
    Type: Application
    Filed: August 31, 2012
    Publication date: March 6, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Jongwoo Choi, Bastiaan Arie Korevaar, Jinbo Cao
  • Publication number: 20140038345
    Abstract: A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 300 C and about 400 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. A partial selenization is performed at a temperature between about 300 C and about 400 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 400 C and about 550 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas.
    Type: Application
    Filed: July 31, 2012
    Publication date: February 6, 2014
    Inventor: Haifan Liang
  • Publication number: 20140030843
    Abstract: A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 30, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shafaat Ahmed, Hariklia Deligianni, Lubomyr T. Romankiw
  • Patent number: 8633496
    Abstract: Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric semiconductor formed therein, the photoelectric semiconductor including a light emitting semiconductor that emits light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto, and at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor has a heterojunction transistor formed therein.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: January 21, 2014
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Masahiko Hata, Sadanori Yamanaka, Tomoyuki Takada
  • Publication number: 20140004654
    Abstract: A method for forming a multi junction photovoltaic device includes providing a germanium layer and etching pyramidal shapes in the germanium layer such that (111) facets are exposed to form a textured surface. A first p-n junction is formed on or over the textured surface from III-V semiconductor materials. Another p-n junction is formed over the first p-n junction from III-V semiconductor materials and follows the textured surface.
    Type: Application
    Filed: July 9, 2012
    Publication date: January 2, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bahman Hekmatshoartabari, Ali Khakifirooz, Ghavam G. Shahidi, Davood Shahrjerdi
  • Publication number: 20140004655
    Abstract: Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.
    Type: Application
    Filed: June 29, 2012
    Publication date: January 2, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Hongying Peng, Bastiaan Arie Korevaar, Jinbo Cao, Stephen Lorenco Araujo, Scott Daniel Feldman-Peabody, Robert Dwayne Gossman
  • Patent number: 8618411
    Abstract: A photovoltaic cell is made by coating a metal foil substrate with cadmium telluride powder, moving the powder coated foil across a cold plate or series of cooled rollers to prevent the substrate from melting, while melting the cadmium telluride powder by passing the powder coated foil under a microwave energy source. This forms a thin film of cadmium telluride on the foil. The cadmium telluride coated foil is then coated with cadmium sulfide powder, which is melted by passing the powder coated foil under a microwave energy source, thereby creating a P-N junction, and the cadmium sulfide layer is coated with indium, which is fused to the cadmium sulfide layer by microwave heating.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: December 31, 2013
    Inventor: David M. Schwartz
  • Publication number: 20130344644
    Abstract: A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.
    Type: Application
    Filed: July 20, 2012
    Publication date: December 26, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bahman Hekmatshoartabari, Jeehwan Kim, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 8586999
    Abstract: A core consisting essentially of a wide band-gap material has a shell consisting essentially of graphene conformally disposed about at least a substantial portion thereof. By one approach the core has at least one bisectional dimension that does not exceed 100 nanometers. By one approach a connection between a pathway that connects the shell to the core comprises a photovoltaic junction.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: November 19, 2013
    Assignee: Dimerond Technologies, LLC
    Inventor: Dieter M. Gruen
  • Patent number: 8563855
    Abstract: A photovoltaic element (110) for converting electromagnetic radiation into electrical energy is provided, which has a tandem cell structure.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: October 22, 2013
    Assignee: BASF SE
    Inventors: Neil Gregory Pschirer, Felix Eickemeyer, Jan Schoeneboom, Jae Hyung Hwang, Martin Karlsson, Ingmar Bruder
  • Publication number: 20130263923
    Abstract: In a solar cell having one or more subcells, at least one subcell is provided with a reverse heterojunction, the reverse heterojunction being formed with an emitter and an adjacent base, wherein the emitter has a band gap that is at least 10 meV lower than that of the adjacent base in order to reduce sheet resistance of the emitter and/or increase the subcell current with minimal effect on the open-circuit voltage. Because of the increase in current, the decrease in emitter sheet resistance, and relatively unchanged open-circuit voltage of the subcell, the efficiency of a solar cell employing one or more subcells with reverse heterojunctions is enhanced.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: Solar Junction Corporation
    Inventors: Rebecca E. Jones-Albertus, Michael J. Sheldon
  • Patent number: 8530995
    Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: September 10, 2013
    Assignee: Georgia State University Research Foundation, Inc.
    Inventors: A.G. Unil Perera, Steven G. Matsik
  • Publication number: 20130224901
    Abstract: An industrial production line is presented to fabricate CIGS thin film solar cells on continuous flexible substrates in roll-to-roll processes. It provides an entire solution including procedures and related equipments from starting blank substrates to completed solar cells that can be used to fabricate solar modules. This production line contains some core apparatuses, such as a modular electroplating system to deposit CIGS materials, a modular thermal reactor to annealing the CIGS films, and a chemical bath deposition reactor to coat CdS buffer layer, are recently invented by the present inventor. The present production line can be conveniently used to prepare the CIGS thin film solar cells with high efficiency but low cost.
    Type: Application
    Filed: February 26, 2012
    Publication date: August 29, 2013
    Inventor: Jiaxiong Wang
  • Publication number: 20130210190
    Abstract: A method and apparatus for forming a solar cell. The apparatus includes a housing defining a vacuum chamber and a rotatable substrate apparatus configured to hold a plurality of substrates on a plurality of surfaces wherein each of the plurality of surfaces are disposed facing an interior surface of the vacuum chamber. A first sputtering source is configured to deposit a plurality of absorber layer atoms of a first type over at least a portion of a surface of each one of the plurality of substrates. An evaporation source is disposed in a first subchamber of the vacuum chamber and configured to deposit a plurality of absorber layer atoms of a second type over at least a portion of the surface of each one of the plurality of substrates. A first isolation source is configured to isolate the evaporation source from the first sputtering source.
    Type: Application
    Filed: June 1, 2012
    Publication date: August 15, 2013
    Applicant: TSMC SOLAR, LTD.
    Inventors: Edward TENG, Ying-Chen CHAO, Chih-Jen YANG, Kuo-Jui HSIAO
  • Patent number: 8502065
    Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer.
    Type: Grant
    Filed: January 9, 2011
    Date of Patent: August 6, 2013
    Assignee: KISCO
    Inventor: Seung-Yeop Myong
  • Publication number: 20130160810
    Abstract: A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 27, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Bastiaan Arie Korevaar, James Neil Johnson, Oleg Sulima
  • Patent number: 8470636
    Abstract: The present invention relates to aqueous processes to make metal chalcogenide nanoparticles that are useful precursors to copper zinc tin sulfide/selenide and copper tin sulfide/selenide. In addition, this invention provides processes for preparing crystalline particles from the metal chalcogenide nanoparticles, as well as processes for preparing inks from both the metal chalcogenide nanoparticles and the crystalline particles.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: June 25, 2013
    Assignee: E I du Pont de Nemours and Company
    Inventors: Daniela Rodica Radu, Lynda Kaye Johnson, Cheng-Yu Lai, Meijun Lu, Irina Malajovich
  • Patent number: 8471301
    Abstract: A device includes a plurality of photoelectric conversion regions, an interlayer insulating film arranged on the plurality of photoelectric conversion regions, a protective insulating film that is arranged in contact with the interlayer insulating film and has a refractive index different from that of the interlayer insulating film, recesses arranged in a light-receiving surface of each of the plurality of photoelectric conversion regions, and embedded regions embedded in the recesses. When a wavelength of incident light to each of the plurality of photoelectric conversion regions is denoted by ? and a refractive index of the embedded regions is denoted by n, a depth d of the recesses is represented by an expression d??/4n.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: June 25, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masanori Kudo, Yoshiyuki Hayashi, Kazuhiro Saito, Taro Kato, Yoshihiko Fukumoto
  • Publication number: 20130157406
    Abstract: Methods of forming copper indium gallium diselenide (CIGS) layers for photovoltaic devices are disclosed. In one aspect, a solution based selenization method in the formation of CIGS is provided. In some embodiments a substrate containing elemental copper (Cu), indium (In) and gallium (Ga) is coated with a solution comprising a source of selenium (Se) dissolved in a solvent. After coating with the selenium based solution, the substrate is heated to form the CIGS layer. Coating of the substrate with the selenium based solution may be carried out by dip coating, slit casting, gap coating, ink-jet type coating, among other techniques. The solution based selenization method disclosed herein provides high material utilization and low cost, unlike vacuum based processes.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 20, 2013
    Applicant: Intermolecular, Inc.
    Inventor: Wei Liu
  • Publication number: 20130119374
    Abstract: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.
    Type: Application
    Filed: October 22, 2012
    Publication date: May 16, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
  • Publication number: 20130119372
    Abstract: A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.
    Type: Application
    Filed: July 17, 2012
    Publication date: May 16, 2013
    Applicant: E INK HOLDINGS INC.
    Inventors: Chia-Chun YEH, Henry WANG, Wei-Chou LAN, Ted-Hong SHINN
  • Patent number: 8440905
    Abstract: A dye-sensitized semiconductor includes a semiconductor, and a copper(I) coordination compound comprising 2,9-dialkyl-diphenyl-1,10-phenanthrolinedisulfonate, on the semiconductor. The dye-sensitized semiconductor may be used as part of a photoanode in a solar cell, which also contains a counter-electrode, and a conductive medium containing a redox-active mediator, in contact with and separating the photoanode and the counter-electrode.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: May 14, 2013
    Inventors: Robert J. LeSuer, Kristy L. Mardis, Ali Manesh
  • Patent number: 8436332
    Abstract: An electron emission element has an electron emission layer that emits an electron from a surface emission portion, a focusing electrode layer that is film-formed on a surface of the electron emission layer via a first insulation layer and focuses the emitted electron, a gate electrode layer that is film-formed on a surface of the focusing electrode layer via a second insulation layer, an emission concave portion that penetrates the gate electrode layer, the second insulation layer, the focusing electrode layer and the first insulation layer and opens in a concave shape on a surface of the surface emission portion, a carbon layer that is film-formed from a surface of the gate electrode layer over an inner peripheral surface of the emission concave portion, and a partial insulation portion that insulates the focusing electrode layer from the carbon layer.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: May 7, 2013
    Assignees: Pioneer Corporation, Pioneer Micro Technology Corporation
    Inventor: Masaki Yoshinari
  • Patent number: 8426241
    Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: April 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Shafaat Ahmed, Hariklia Deligianni, Lubomyr T. Romankiw, Kejia Wang
  • Publication number: 20130082185
    Abstract: A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 4, 2013
    Inventors: Maria Mitkova, Darryl P. Butt
  • Publication number: 20130078757
    Abstract: One aspect of the present invention includes a method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.
    Type: Application
    Filed: September 26, 2011
    Publication date: March 28, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Donald Franklin Foust, Hongbo Cao
  • Patent number: 8405097
    Abstract: An optical sensor and a method for manufacturing the same are provided. The optical sensor includes a first photosensitive layer, a first charge carrier collecting element, a second photosensitive layer and a second charge carrier collecting element. The first photosensitive layer has a first light incident surface. The first charge carrier collecting element is disposed on a surface of the first photosensitive layer opposite to the first light incident surface of the first photosensitive layer. The second photosensitive layer is adjacent to the first photosensitive layer and has a second light incident surface. The second charge carrier collecting element is disposed on a surface of the second photosensitive layer opposite to the second light incident surface of the second photosensitive layer.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: March 26, 2013
    Assignee: Novatek Microelectronics Corp.
    Inventor: Dong-Hai Huang
  • Publication number: 20130065355
    Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 14, 2013
    Applicant: INTERMOLECULAR, INC.
    Inventors: Haifan Liang, Jeroen Van Duren, Zhi-Wen Sun
  • Publication number: 20130063636
    Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.
    Type: Application
    Filed: October 19, 2012
    Publication date: March 14, 2013
    Applicant: Sony Corporation
    Inventor: Sony Corporation
  • Publication number: 20130049146
    Abstract: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.
    Type: Application
    Filed: August 21, 2012
    Publication date: February 28, 2013
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Fabrice DIERRE, Matthias STRASSBURG
  • Publication number: 20130048061
    Abstract: A device and method for fabrication of a multi-junction photovoltaic device includes providing a parent substrate including a single crystal III-V material. The parent substrate forms a III-V cell of the multi-junction photovoltaic device. A lattice-matched Germanium layer is epitaxially grown on the III-V material to form a final cell of the multi-junction photovoltaic device. The Germanium layer is bonded to a foreign substrate.
    Type: Application
    Filed: August 24, 2011
    Publication date: February 28, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: CHENG-WEI CHENG, Jack O. Chu, Jeehwan Kim, Devendra K. Sadana, Kuen-Ting Shiu
  • Publication number: 20130048952
    Abstract: An article includes a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function. Electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
    Type: Application
    Filed: May 5, 2011
    Publication date: February 28, 2013
    Applicant: National University of Singapore
    Inventors: Wei Chen, Zhenyu Chen, Thye Shen Andrew Wee, Lanfei Xie, Xiao Wang, Jiatao Sun, Ariando
  • Publication number: 20130048336
    Abstract: A tape is disclosed. The tape includes a metallic foil, an adhesive layer laminated on one surface of the metallic foil and a protective polymeric coating laminated on an opposing second surface of the metallic foil. The protective coating comprises an anti-corrosion agent. The protective coating shields the metallic foil from corrosion and other drawbacks that can occur by environmental exposure. The tape readily can be employed as a busbar tape in photovoltaic cells to provide a cost-effective substitute for the tin-coated copper currently used there.
    Type: Application
    Filed: August 20, 2012
    Publication date: February 28, 2013
    Applicant: ADHESIVES RESEARCH, INC.
    Inventor: Ranjit MALIK
  • Patent number: 8383930
    Abstract: Disclosed is a solar cell including a passivation film formed on a light-receiving surface of a silicon substrate, and an antireflection film formed on the passivation film, wherein the passivation film has a refractive index higher than that of the antireflection film. The passivation film and the antireflection film can each be made of a silicon nitride film.
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: February 26, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takayuki Isaka, Yoshiya Abiko, Yoshifumi Tonomura
  • Publication number: 20130037106
    Abstract: Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.
    Type: Application
    Filed: September 29, 2012
    Publication date: February 14, 2013
    Applicant: PRECURSOR ENERGETICS, INC.
    Inventor: Precursor Energetics, Inc.
  • Publication number: 20130040418
    Abstract: Methods for photovoltaic absorber materials for uses including solar cells. The methods include depositing onto a substrate an ink comprising one or more compounds having the formula MB(ER)3 wherein MB is In, Ga or Al, E is S or Se, and R is selected from alkyl, aryl, heteroaryl, alkenyl, amido, and silyl, and heating the substrate.
    Type: Application
    Filed: September 28, 2012
    Publication date: February 14, 2013
    Applicant: PRECURSOR ENERGETICS, INC.
    Inventor: Precursor Energetics, Inc.
  • Publication number: 20130029452
    Abstract: A method of forming optoelectronic conversion layer includes the following steps. A first substrate is provided, and an electrode layer is formed on the first substrate. A first metal precursor layer including one or plural of metal components is formed on the electrode layer. A second substrate is provided, and a nonmetal precursor layer including at least one nonmetal component is formed on the second substrate. The first substrate and the second substrate are then stacked so that the nonmetal precursor layer and the first metal precursor layer are in contact. A thermal treatment is performed to have the first metal precursor layer react with the nonmetal precursor layer for forming an optoelectronic conversion layer.
    Type: Application
    Filed: February 20, 2012
    Publication date: January 31, 2013
    Inventor: Yi-Jiunn Chien
  • Publication number: 20130026588
    Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
    Type: Application
    Filed: April 12, 2011
    Publication date: January 31, 2013
    Applicant: KYOCERA CORPORATION
    Inventors: Shintaro Kubo, Rui Kamada, Yusuke Miyamichi, Shuji Nakazawa
  • Publication number: 20130029451
    Abstract: A method for making a solar cell includes: (a) forming over a substrate a photoelectric transformation layer that is made of a chalcopyrite-based photovoltaic material; (b) performing an ion milling treatment, in which ions are injected to an upper surface of the photoelectric transformation layer at an ion incident angle with respect to the upper surface to partially etch the photoelectric transformation layer, so that the photoelectric transformation layer is formed with a plurality of nano-pillar structures, the ion incident angle ranging from 0° to 90°; and (c) forming an electrode unit to transmit electricity from the photoelectric transformation layer.
    Type: Application
    Filed: January 23, 2012
    Publication date: January 31, 2013
    Inventors: Yu-Lun Chueh, Chin-Hung Liu, Chih-Huang Lai