IMAGE SENSOR DEVICES HAVING DUAL-GATED CHARGE STORAGE REGIONS THEREIN
An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
This application is a continuation of U.S. patent application Ser. No. 12/632,989, filed Dec. 8, 2009, which claims the benefit of Korean Patent Application No. 10-2008-0123762, filed Dec. 8, 2008, the contents of which are hereby incorporated herein by reference in their entireties.
FIELD OF THE INVENTIONThe present invention relates to integrated circuit devices and, more particularly, to image sensor devices.
BACKGROUNDConventionally, an efficiency in collecting photocharges is controlled by using a photogate of a MOS structure and the distance from an object can be measured by using the phase difference between emitted light and reflected light. However, in the MOS-type photogate structure using poly-silicon (poly-Si), a light absorption factor is generated in the course of the measurement and thus loss of light efficiency may be generated. When the thickness of poly-Si is made thin in order to restrict the loss, the resistance of poly-silicon increases so that the voltage applied to the photogate may not be sufficiently transferred.
Also, in the MOS type photogate structure, noise due to dark current may be generated because photocharges concentrate at the boundary surface between Si and SiO2. Furthermore, the MOS type photogate structure can require a high voltage of 3.3V or higher for stable operation thereof
SUMMARYImage sensor devices according to embodiments of the invention include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals. The first and second diodes also include respective second conductivity type regions that form non-rectifying semiconductor junctions with the common charge generating region. The image sensor devices further include a first transfer transistor having a first source/drain region electrically coupled to the common charge generating region and a second transfer transistor having a first source/drain region electrically coupled to the common charge generating region.
According to some of these embodiments of the invention, the first conductivity type regions of the first and second diodes are P-type anode regions and the second conductivity type regions are N-type cathode regions. In particular, the first source/drain region of the first transistor may be disposed in the N-type cathode region associated with the first diode.
According to additional embodiments of the invention, the image sensor device includes a substrate having a well region of first conductivity type therein, and the common charge generating region forms a P-N rectifying junction with the well region. The first transfer transistor includes an insulated gate electrode extending opposite respective portions of the well region, the common charge generating region and the N-type cathode region of the first diode.
Image sensor devices according to additional embodiments of the invention include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region, which is configured to receive light incident on a surface of the image sensor device. The first and second diodes have respective first conductivity type anode regions adjacent a light receiving surface of the substrate and second conductivity type cathode regions that form non-rectifying semiconductor junctions with the common charge generating region. According to further aspects of these embodiments, the image sensor device may be configured to drive the first conductivity type anode regions of the first and second diodes with first and second gate signals, respectively, which are active during first and second non-overlapping time intervals, respectively. The image sensor may also include a first transfer transistor having a source/drain region in the cathode region of the first diode, and a second transfer transistor having a source/drain region in the cathode region of the second diode. In some of these embodiments of the invention, the anode region of the first diode includes a first plurality of P-type fingers within the common charge generating region. The anode region of the second diode may also include a second plurality of P-type fingers that are interdigitated with the first plurality of P-type fingers.
Exemplary embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
The attached drawings for illustrating embodiments of the inventive concept are referred to in order to gain a sufficient understanding of the inventive concept and the merits thereof. Hereinafter, the inventive concept will be described in detail by explaining embodiments of the inventive concept with reference to the attached drawings. Like reference numerals in the drawings denote like elements.
As shown in
The photocharge storage region 10 may store the photocharges generated by the photocharge generation region 30. The photocharge storage region 10 may be doped into the first type, for example, the n-type. In detail, as illustrated in
The photocharge generation region 30 and the photocharge storage region 10 may be doped into the same type, for example, the n-type. According to an exemplary embodiment, the doping concentration of the photocharge storage region 10 may be higher than that of the photocharge generation region 30. Also, to gather the photocharges generated in a deep area, the photocharge generation region 30 may be doped at a low concentration or made in an intrinsic state.
The photocharges generated in the photocharge generation region 30 may be selectively transmitted to the photocharge storage region 10 in response to any one of voltages Vgate1 and Vgate2 applied to the gating region 20. The gating region 20 may be formed in one surface of the photocharge storage region 10. The gate voltages Vgate1 and Vgate2 may be respectively input to the gating region 20. As illustrated in
Also, a first voltage, for example, Vgate1, applied to a first gating region (or first gate) 21, for example, and a second voltage, for example, Vgate2, applied to a second gating region (or, second gate) 22, for example, may have a phase difference of 180° from each other. According to an exemplary embodiment, the first and second voltages Vgate1 and Vgate2 may be square wave type voltages. Also, according to an exemplary embodiment, the amplitudes of the first and second voltages Vgate1 and Vgate2 may be not greater than 1V. Thus, since the square wave voltages having a phase difference of 180° are input to the first and second gates 21 and 22, the first and second gates 21 and 22 are not gated at the same time. Thus, the pixel array 100 according to the exemplary embodiment of the present inventive concept may be implemented such that the voltage may be selectively supplied to any one of the first and second gates 21 and 22.
For example, when the first voltage Vgate1 has a first level, for example, a low level, since the second voltage Vgate2 has a phase difference of 180° from the first voltage Vgate1, the second voltage Vgate2 may have a second level, for example, a high level. In this case, as the area of a second photocharge storage region 12, for example a second well 12 formed by contacting the second gate 22 extends and is deepened, the photocharges generated in the photocharge generation region 30 may be accumulated in the second well 12. Similarly, when the first voltage Vgate1 has a second level, for example, a high level, the second voltage Vgate2 may have the first level, for example, the low level. In this case, as the area of a first photocharge storage region 11, for example a first well 11 formed by contacting the first gate 21 extends and is deepened, the photocharges generated in the photocharge generation region 30 may be accumulated in the first well 11.
Also, the pixel array 100 according to the present exemplary embodiment may further include a substrate 40 that is formed under the photocharge generation region 30. The substrate 40 may be doped into the second type, for example, the p-type. Although in
When the reflected light reflected from the subject is absorbed in the photocharge generation region 30, photocharges may be generated in the photocharge generation region 30. The first voltage Vgate1 input to the first gate 21 may have the same phase as that of the light emitted from the light source. The second voltage Vgate2 input to the second gate 22 may have a phase difference of 180° from that of the first voltage Vgate1. Thus, while the reflected light is incident on the photocharge generation region 30, a time period “A” during which the first voltage Vgate1 applied to the first gate 21 has a second level, for example, a high level, and a time period “B” during which the second voltage Vgate2 applied to the second gate 22 has the second level, for example, the high level, may be determined.
The photocharges may be stored in the first and second wells 11 and 12 during the time periods “A” and “B”. The distance from the subject may be calculated by using a difference in the amount of photocharges stored in the first and second wells 11 and 12.
Since the operations or structures of the substrate 40, the photocharge generation region 30, the photocharge storage region 10, and the gate region 20 are substantially the same as those of ones illustrated in
In detail, as illustrated in
For example, the photocharges stored in the first well 11 in response to a voltage applied to the first gate 21 may be transferred to the floating diffusion layers 70 in response to the gating operation of any one, for example, Transfer Gate 1, of the transfer gates 60. That is, an inversion channel is formed between the floating diffusion layers 70 and each of the first and second wells 11 and 12 by the gating operation of the transfer gates Transfer Gate 1 60. The photocharges stored in each of the first and second wells 11 and 12 may be transferred to the floating diffusion layers 70 along the inversion channel.
The photocharges accumulated in the floating diffusion layers 70 may be sensed by being amplified by a sensing amplifier AMP 90. After sensing is completed, the photocharges may be reset to the floating diffusion layers 70 by the gating operation of the reset gate 80. In this case, since one time of sampling may not provide a sufficient amplitude of a signal, the pixel array 100 according to the present exemplary embodiment may be implemented such as the sensing operation can be performed after the photocharge accumulation operation is performed several times. Accordingly, the voltages Vgate1 and Vgate2 applied to the first and second gates 21 and 22 may be controlled.
The photoelectric conversion unit 210 may generate an image signal of a subject based on the incident light. The photoelectric conversion unit 210 may include a pixel array 211, a row decoder 212, a row driver 213, a correlated double sampling (CDS) block 214, an output buffer 215, a column driver 216, a column decoder 217, a timing generator 218, a control register block 219, and a ramp signal generator 220.
The pixel array 211 may include any one of the pixel arrays of
The CDS block 214 may perform correlated double sampling with respect to a pixel signal output from a unit pixel connected to any one of the column lines constituting the pixel array 211 to generate a sampling signal (not shown), compare a sampling signal with a ramp signal Vramp, and a digital signal according to a comparison result. The output buffer 215 may buffer and output signals output from the CDS block 214 in response to a column control signal, for example, an address signal, output from the column driver 216.
The column driver 216 may selectively activate at least any one of the column lines of the pixel array 211 in response to a decoded control signal, for example, an address signal, output from the column decoder 217. The column decoder 217 may decode a column control signal, for example, an address signal, generated by the timing generator 218. The timing generator 218 may generate a control signal to control the operation of at least one of the pixel array 211, the row decoder 212, the output buffer 215, the column decoder 217, and the ramp signal generator 220, based on a command output from the control register block 219.
The control register block 219 may generate various commands to control elements constituting the photoelectric conversion unit 210. The ramp signal generator 220 may output a ramp signal Vramp to the CDS block 214 in response to a command output from the control register block 219. The image processor 230 may generate an image of the subject based on pixel signals output from the photoelectric conversion unit 210.
Referring to
The CPU 300 may generate a control signal to control the operation of the 3D image sensor 200 and provide the control signal to the 3D image sensor 200 via the bus 500. The memory device 400 may receive and store an image signal output from the 3D image sensor 200 via the bus 500.
The 3D image sensor 200 may be integrated with the CPU 300 and the memory device 400. In some cases, a digital signal processor (DSP) is integrated with the CPU 300 and the memory device 400 or the 3D image sensor 200 only may be integrated in a separate chip.
As described above, since the 3D image sensor according to the present inventive concept includes a pixel having a junction gate structure, a light use efficiency may be increased. Also, according to the 3D image sensor according to the present inventive concept, since the generated photocharges are stored in the well by avoiding the boundary surface of Si or SiO2, noise due to dark current may be greatly decreased. Furthermore, the 3D image sensor according to the present inventive concept may be easily implemented because an operation at a low operation voltage is possible.
While the inventive concept has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.
Claims
1. An image sensor device, comprising:
- a dual-gated charge storage region within a substrate, said dual-gated charge storage region comprising first and second diodes within a common charge generating region configured to receive light incident on a surface of the image sensor device, said first and second diodes comprising respective first conductivity type regions responsive to first and second gate signals, respectively, which are active during non-overlapping time intervals, and respective second conductivity type regions that form non-rectifying semiconductor junctions with the common charge generating region;
- a first transfer transistor having a first source/drain region electrically coupled to the common charge generating region; and
- a second transfer transistor having a first source/drain region electrically coupled to the common charge generating region.
2. The image sensor device of claim 1, wherein the first conductivity type regions of the first and second diodes are P-type anode regions; and wherein the second conductivity type regions of the first and second diodes are N-type cathode regions.
3. The image sensor device of claim 2, wherein the first source/drain region of said first transistor is in the N-type cathode region associated with the first diode.
4. The image sensor device of claim 2, wherein the substrate comprises a well region of first conductivity type therein; wherein the common charge generating region forms a P-N rectifying junction with the well region; and wherein said first transfer transistor comprises an insulated gate electrode extending opposite respective portions of the well region, the common charge generating region and the N-type cathode region of the first diode.
5. An image sensor device, comprising:
- a dual-gated charge storage region within a substrate, said dual-gated charge storage region comprising first and second diodes within a common charge generating region configured to receive light incident on a surface of the image sensor device, said first and second diodes comprising respective first conductivity type anode regions adjacent a light receiving surface of the substrate and respective second conductivity type cathode regions that form non-rectifying semiconductor junctions with the common charge generating region; and
- wherein the image sensor device is configured to drive the first conductivity type anode regions of the first and second diodes with first and second gate signals, respectively, which are active during first and second non-overlapping time intervals.
6. The image sensor of claim 5, further comprising:
- a first transfer transistor having a source/drain region in the cathode region of the first diode; and
- a second transfer transistor having a source/drain region in the cathode region of the second diode.
7. The image sensor of claim 5, wherein the anode region of the first diode comprises a first plurality of P-type fingers within the common charge generating region; and wherein the anode region of the second diode comprises a second plurality of P-type fingers that are interdigitated with the first plurality of P-type fingers,
Type: Application
Filed: Aug 8, 2013
Publication Date: Dec 5, 2013
Inventors: Eric R. Fossum (Wolfeboro, NH), Young Gu Jin (Hwasung-si), Soo Jung Hwang (Seoul), Dae Kil Cha (Seoul), Yoon Dong Park (Yongin-si), Jung Chak Ahn (Yongin-Si), Kyoung Sik Moon (Hwasung-si)
Application Number: 13/962,602
International Classification: H01L 27/148 (20060101);