Process for forming silicon oxide film and gate oxide film for MOS transistors

- Sony Corporation

A process for forming a silicon oxide film comprising:(a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and(b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.

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Claims

1. A gate oxide film of a MOS transistor, which comprises a silicon oxide film formed by a process for forming a silicon oxide film comprising:

(a) forming a silicon oxide film on a semiconductor substrate by wet oxidation; and
(b) subjecting the silicon oxide film to heat treatment under an inert gas atmosphere containing a halogen element;
wherein a pyrogenic oxidation process is used as the wet oxidation process; and
wherein the halogen element is chlorine.

2. A film formed by the process as claimed in claim 1, wherein said process further comprises heat treating said semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes, wherein said heat treating is performed prior to said forming a silicon oxide film.

3. A film formed by the process as claimed in claim 1, wherein said process further comprises furnace annealing.

4. A film formed by the process as claimed in claim 1, wherein said chlorine is used in the form of hydrochloric acid, and the inert gas atmosphere contains hydrochloric acid at a concentration of from 0.02 to 10% by volume.

5. A film formed by the process as claimed in claim 3, wherein said furnace annealing is performed in the temperature range of from 800.degree. to 900.degree. C.

6. A film formed by the process as claimed in claim 1, wherein a semiconductor substrate fabricated from a single crystal obtained by a Czochralski method or a magnetic-field-applied Czochralski method is used as the semiconductor substrate.

Referenced Cited
U.S. Patent Documents
4007294 February 8, 1977 Woods et al.
4518630 May 21, 1985 Grasser
5172203 December 15, 1992 Hayashi
5506178 April 9, 1996 Suzuki et al.
Other references
  • IEEE Electron Devices Letters, vol. 11, No. 1, Jan. 1990, pp. 3-5 by MacWilliams et al.
Patent History
Patent number: 5854505
Type: Grant
Filed: Feb 24, 1997
Date of Patent: Dec 29, 1998
Assignee: Sony Corporation
Inventors: Atsushi Suzuki (Kanagawa), Akihide Kashiwagi (Kanagawa), Kazuhiko Tokunaga (Kanagawa), Toshihiko Suzuki (Kanagawa)
Primary Examiner: Mark V. Prenty
Attorney: Ronald P. Kananen
Application Number: 8/804,957