Method of increasing CPP GMR in a spin valve structure
A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.
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This application is related to Ser. No. 10/392,118, filing date Mar. 19, 2003 and to Ser. No. 10/718,373 filing date Nov. 20, 2003, all assigned to the same assignee as the current invention.
BACKGROUND OF THE INVENTION1. Field of the Invention
This invention relates generally to the fabrication of giant magnetoresistive (GMR) magnetic field sensors of a “current-perpendicular-to-the-plane” (CPP) configuration. More particularly, it relates to such a sensor that is geometrically patterned, using a single electron beam formed mask and a self-aligned double lift-off scheme, to lower its resistance and redistribute its current in a manner that increases sensor sensitivity and eliminates local hot-spots caused by excessive Joule heating.
2. Description of the Related Art
Magnetic read sensors that utilize the giant magnetoresistive (GMR) effect for their operation are generally of the “current-in-the-plane” (CIP) configuration, wherein current is fed into the structure by leads that are laterally disposed to either side of an active sensor region and the current moves through the structure essentially within the planes of its magnetic and other conducting layers. Since the operation of GMR sensors depends on the detection of resistance variations in their active magnetic layers caused by changes in the relative directions of their magnetic moments, it is important that a substantial portion of the current passes through those layers so that their resistance variations can have a maximally detectable effect. Unfortunately, CIP GMR sensor configurations typically involve layer stacks comprising layers that are electrically conductive but not magnetically active and that play no role in providing resistance variations. As a result, portions of the current are shunted through regions that produce no detectable responses and, thereby, the overall sensitivity of the sensor is adversely affected. The CPP sensor configuration avoids this current shunting problem by disposing its conducting leads vertically above and below the active sensor stack, so that all of the current passes perpendicularly through all of the layers as it goes from the lower to the upper lead. The CPP configuration thereby holds the promise of being effective in reading magnetically recorded media having recording densities exceeding 100 Gbit/in2.
The CPP configuration is not without its problems, however. Whereas current in the CIP configuration passes through parallel conducting layers, in the CPP configuration it passes through such layers in series. The inherent problem in the CIP configuration is the loss of current (and sensitivity) through conductive, but non-magnetic layers; the analogous problem in the CPP configuration is the large voltage drop across magnetically inactive high resistance layers, which tends to mask the voltage variations produced by the active layers. The GMR resistance ratio, DR/R, is typically on the very low order of 1% for the CPP design, because the DR is provided by variations of the low resistance, magnetically active layers, whereas R includes the high resistance of inactive layers. It is worth noting that the high value of R also increases Joule heating in the sensor, causes local hot-spots and, therefore, limits the allowable magnitude of the sensing current.
GMR stack designs favor the use of magnetically pinned layers that are pinned by antiferromagnetic (AFM) pinning layers. Antiferromagnetic materials used in such pinning layers, together with their seed layers, tend to be formed of high-resistance materials and it is these layers that provide a parasitic resistance, Rpa, that is included in R and lowers the sensitivity, DR/R, of the CPP sensor.
One approach to alleviating this problem is to discover and use low-resistance AFM materials. This would necessitate a difficult materials search. An alternative approach is to lower the effective parasitic resistance of the AFM layer by changing its geometry. That is the approach taken by the present invention, particularly as relates to the fabrication of a synthetic spin valve configuration, i.e. a configuration in which the pinned layer comprises a pair of ferromagnetic layers with antiparallel magnetizations coupled by an appropriate material layer formed between them and held in that configuration by a pinning layer of antiferromagnetic material.
The pertinent prior art cited below has offered no similar method for improving the sensitivity of the CPP design having a synthetic spin valve stack configuration. Lederman et al. (U.S. Pat. No. 5,627,704) discloses a CPP GMR stack structure formed within a gap located in one of two pole layers of a magnetic yoke structure which also has a transducing gap formed in an ABS plane. The two pole pieces of the yoke serve to guide magnetic flux to the GMR stack which has current leads above and below it and permanent magnet biasing layers horizontally disposed on either side of it. Yuan et al. (U.S. Pat. No. 5,731,937) discloses a CPP sensor configuration having sensing element dimensions in a particular ratio to current lead dimensions so that the efficiency of the element is thereby increased. Yuan et al. (U.S. Pat. No. 6,219,205) discloses a CPP sensor configuration wherein the sensor is recessed from the magnetically recorded surface being sensed and wherein the sensing surface of the sensor is covered by a dielectric layer which serves to protect the sensing layer from corrosion and other adverse effects resulting from close contact with the recorded surface.
Dykes et al. (U.S. Pat. No. 5,668,688) discloses a spin valve CPP configuration in which the active layers form a stack of uniform width disposed between upper and lower shield and conductor layers. Saito (U.S. Pat. No. 6,347,022) discloses a dual spin-valve configuration in which a magnetically free layer is sandwiched between magnetically pinned layers and which provides an advantageously vertically asymmetric structure and good resistance variations.
Rottmayer (U.S. Pat. No. 5,880,912) provides a GMR sensing element having a canted bias field which cancels the adverse affect of the field produced by the applied sensing current and thereby increases the magnitude of the sensing current that can be used.
Tong et al. (U.S. Pat. No. 6,317,297) provide a spin valve configuration with improved linearity and a wider temperature range for thermal stability. The configuration utilizes pinned layers which are pinned by the action of the sensing current during use of the sensor.
Although the prior art described above provide methods for improving the performance attributes of GMR spin valves in a CPP configuration, they do not address the problem of the high resistance of an AFM pinning layer and seed layer and its adverse affect on sensor sensitivity. In particular, the prior art does not discuss or disclose a method of forming such a CPP GMR sensor in which the geometry of the various layers permits a re-distribution of current within the sensor stack that effectively reduces its resistance and thereby increases it sensitivity.
SUMMARY OF THE INVENTIONAccordingly, it is a first object of this invention is to provide a novel current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) read-sensor stack structure of a synthetic spin valve configuration, having decreased resistance and improved sensitivity.
It is a second object of this invention to provide a sensor stack structure wherein the current path through said sensor stack does not produce local hot spots due to increased Joule heating effects.
The objects stated above will be achieved by a novel geometric configuration of a CPP synthetic spin valve design. For reference, there is shown in
In contrast, there is shown in
The present invention is a GMR spin valve sensor in a CPP (current-perpendicular-to-plane) synthetic pinned layer spin-valve configuration having a novel geometry that improves sensor sensitivity, DR/R, by maintaining (or improving) DR, while significantly reducing R. The novel design includes a ferromagnetic free layer of very small cross-sectional area, centered on a conducting, non-magnetic spacer layer of larger cross-sectional area, with the spacer layer then being centered on the remaining GMR sensor stack which is of still larger cross-sectional area. The step-wise reduction in cross-sectional areas of the layers leads to reduced current density in the pinned layer as well as a more longitudinal current path, both enhancing the performance of the sensor.
Referring again to
The resistance of the sensor stack of
The resistance, R, and the maximum resistance change, DR, have been calculated for the formation of
Referring finally to
Within the preferred embodiment of the present invention, several methods can be found for patterning the GMR stack, patterning and positioning the spacer layer centrally on the GMR stack and patterning and positioning the capped free layer centrally on the spacer layer. One exemplary method for achieving the objects of the invention is illustrated schematically in
Referring first to
Referring next to
Referring next to
As is understood by a person skilled in the art, the preferred embodiments of the present invention are illustrative of the present invention rather than limiting of the present invention. Revisions and modifications may be made to methods, materials, structures and dimensions employed in a CPP GMR sensor of the synthetic spin valve type having reduced resistance and increased sensitivity, while still providing such a CPP GMR sensor of the synthetic spin valve type having reduced resistance and increased sensitivity as described herein, in accord with the spirit and scope of the present invention as defined by the appended claims.
Claims
1. A CPP GMR sensor of the synthetic spin valve type comprising:
- a substrate;
- a GMR stack formed on said substrate, said stack having a first uniform lateral cross-section;
- a patterned conducting non-magnetic spacer layer formed on said GMR sensor stack, said layer having a second lateral cross-section with a smaller cross-sectional area than said first lateral cross-section; and
- a patterned capped ferromagnetic free layer formed with a third, uniform, lateral cross-section on said spacer layer, said third cross-section being smaller in area than said second cross-section and said capped ferromagnetic free layer comprising a ferromagnetic free layer on which is formed a conducting, non-magnetic capping layer.
2. The CPP GMR sensor of claim 1 wherein said GMR stack comprises:
- a seed layer;
- a pinning layer formed of an antiferromagnetic material formed on said seed layer;
- a synthetic antiferromagnetic pinned layer formed on said pinning layer, said pinned layer further comprising: a first ferromagnetic layer; an antiferromagnetically coupling layer formed on said first ferromagnetic layer; a second ferromagnetic layer formed on said coupling layer; and wherein the magnetizations of said first and second ferromagnetic layers are antiparallel.
3. The CPP GMR stack of claim 2 wherein said first ferromagnetic layer is a layer of CoFe formed to a thickness between approximately 20 and 60 angstroms.
4. The CPP GMR stack of claim 2 wherein said second ferromagnetic layer is a layer of CoFe formed to a thickness between approximately 20 and 60 angstroms.
5. The CPP GMR stack of claim 2 wherein said coupling layer is a layer of Ru formed to a thickness between approximately 6 and 9 angstroms.
6. The CPP GMR sensor of claim 1 wherein the first uniform lateral cross-section of each layer is substantially square and has substantially the same lateral dimension which is approximately 0.3 microns or greater.
7. The CPP GMR sensor of claim 1 wherein said conducting, non-magnetic spacer layer is a layer of Cu formed to a thickness between approximately 20 and 100 angstroms.
8. The CPP GMR sensor of claim 7 wherein said second uniform lateral cross-section is substantially square and has a lateral dimension between approximately 0.2 and 0.4 microns.
9. The CPP GMR sensor of claim 8 wherein said conducting, non-magnetic spacer layer is centered on said GMR stack.
10. The CPP GMR sensor of claim 1 wherein said capped ferromagnetic free layer further comprises a ferromagnetic layer of CoFe, CoNiFe or CoFe/NiFe formed to a thickness between approximately 20 and 60 angstroms, on which is formed a capping layer of Cu, formed to a thickness between approximately 5 and 50 angstroms.
11. The CPP GMR sensor of claim 1 wherein said capped ferromagnetic layer is formed to a third, uniform lateral cross-section, which is a substantially square cross-section between approximately 0.03 and 0.1 angstroms in lateral dimension.
12. The CPP GMR sensor of claim 1 wherein said capped ferromagnetic layer is formed centered on said non-magnetic spacer layer.
13. A method of forming a CPP GMR sensor of the synthetic spin valve type comprising:
- providing a substrate;
- forming on said substrate a CPP GMR film stack, said film stack including a GMR stack portion, on which is formed a non-magnetic spacer layer, upon which is formed a capped free layer portion and said film stack having a common width W1;
- patterning said capped free layer portion and said non-magnetic spacer layer portion of said stack to a common width W2 where W2 is less than W1; and then
- patterning said capped free layer portion to a common width W3, where W3 is less than W2.
14. The method of claim 13 wherein said GMR stack portion comprises:
- a seed layer;
- a pinning layer formed of an antiferromagnetic material formed on said seed layer;
- a synthetic antiferromagnetic pinned layer formed on said pinning layer, said pinned layer further comprising: a first ferromagnetic layer; an antiferromagnetically coupling layer formed on said first ferromagnetic layer; a second ferromagnetic layer formed on said coupling layer; and wherein the magnetizations of said first and second ferromagnetic layers are antiparallel.
15. The method of claim 14 wherein said first ferromagnetic layer is a layer of CoFe formed to a thickness between approximately 20 and 60 angstroms.
16. The method claim 14 wherein said second ferromagnetic layer is a layer of CoFe formed to a thickness between approximately 20 and 60 angstroms.
17. The method claim 14 wherein said coupling layer is a layer of Ru formed to a thickness between approximately 6 and 9 angstroms.
18. The method of claim 13 wherein W1 is approximately 0.3 microns or greater.
19. The method of claim 13 wherein said conducting, non-magnetic spacer layer is a layer of Cu formed to a thickness between approximately 20 and 100 angstroms.
20. The method of claim 13 wherein W2 is between approximately 0.2 and 0.4 microns.
21. The method of claim 13 wherein said capped ferromagnetic free layer comprises a ferromagnetic layer of CoFe, CoNiFe or CoFe/NiFe formed to a thickness between approximately 20 and 60 angstroms, on which is formed a capping layer of Cu, formed to a thickness between approximately 5 and 50 angstroms.
22. The method of claim 13 wherein W3 is between approximately 0.03 and 0.1 angstroms in lateral dimension.
23. The method of claim 13 wherein said first patterning is accomplished using a first bi-layer lift-off photolithographic mask of width W2 formed on said capping layer and an ion-beam etch or a reactive ion etch and said etch removes all portions of the capping layer, the free layer and the non-magnetic spacer layer peripherally disposed to a region directly beneath said mask.
24. The method of claim 13 wherein said second patterning is accomplished using a second bi-layer lift-off photolithographic mask of width W3 formed on said capping layer and an ion-beam etch or a reactive ion etch and said etch removes all portions of the capping layer and the free layer peripherally disposed to a region directly beneath said mask.
25. The method of claim 24 wherein said second bi-layer lift-off mask is centrally aligned and symmetrically disposed on said capping layer.
5627704 | May 6, 1997 | Lederman et al. |
5668688 | September 16, 1997 | Dykes et al. |
5731937 | March 24, 1998 | Yuan |
5880912 | March 9, 1999 | Rottmayer |
6198609 | March 6, 2001 | Barr et al. |
6205008 | March 20, 2001 | Gijs et al. |
6219205 | April 17, 2001 | Yuan et al. |
6222707 | April 24, 2001 | Huai et al. |
6233125 | May 15, 2001 | Knapp et al. |
6317297 | November 13, 2001 | Tong et al. |
6347022 | February 12, 2002 | Saito |
6819532 | November 16, 2004 | Kamijo |
6850393 | February 1, 2005 | Hara et al. |
6903904 | June 7, 2005 | Li et al. |
- Co-pending U.S. Appl. No. 10/392,118, filed Mar. 19, 2003, same assignee, “GMR Improvement in CPP Valve Head by Inserting a Current Channeling Layer (CCL)”.
- Co-pending U.S. Appl. No. 10/718,372, filed Nov. 20, 2003, same assignee, “Self-Alignment Scheme for Enhancement of CPP-GMR”.
Type: Grant
Filed: Nov 20, 2003
Date of Patent: Mar 21, 2006
Patent Publication Number: 20050111148
Assignee: Headway Technologies, Inc. (Milpitas, CA)
Inventors: Min Li (Dublin, CA), Kochan Ju (Monte Sereno, CA), Youfeng Zheng (San Jose, CA), Simon Liao (Fremont, CA), Jeiwei Chang (Cupertino, CA)
Primary Examiner: Jefferson Evans
Attorney: George O. Saile
Application Number: 10/718,373
International Classification: G11B 5/39 (20060101);