Method for depositing carbon nanotubes on a substrate of a field emission device using direct-contact transfer deposition
A preferred method for making a carbon nanotube-based field emission device in accordance with the invention includes the following steps: providing a substrate (22) with a surface; depositing a catalyst layer (24) on a predetermined area on the surface of the substrate; forming a carbon nanotube array (30) extending from the predetermined area; forming a cathode electrode (40) on top of the carbon nanotube array; and removing the substrate so as to expose the carbon nanotube array.
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1. Field of the Invention
The present invention relates to a method for making a field emission device, and more particularly to a method for making a carbon nanotube-based field emission device.
2. Description of Prior Art
Carbon nanotubes are a novel carbonaceous material discovered by Iijima, a researcher of NEC corporation, in 1991. Relevant information was reported in an article by Iijima, entitled “Helical Microtubules of Graphitic Carbon” (Nature, Vol. 354, P56, 1991). Carbon nanotubes can transmit an extreme high electrical current and emit electrons at a very low voltage of less than 100 volts, which make it a very promising potential material for field emission applications.
Referring to
Accordingly, an object of the present invention is to provide a method for making a carbon nanotube-based field emission device with a flat electron emitting surface.
Another object of the present invention is to provide a method for making a carbon nanotube-based field emission device which can emit electrons more uniformly.
In order to achieve the objects set above, a preferred method for making a carbon nanotube-based field emission device in accordance with the present invention comprises the following steps: providing a substrate with a surface; depositing a catalyst layer on a predetermined area on the surface of the substrate; forming a carbon nanotube array extending from the predetermined area; forming a cathode electrode on top of the carbon nanotube array; and removing the substrate so as to expose the carbon nanotube array. A flatness of the surface of the substrate is less than 1 micron so that a bottom surface of the carbon nanotube array grown therefrom has the same flatness. Thus, the improved flatness and the absence of disorderly nanotubes, remaining catalyst, and amorphous carbon materials improves electron emission uniformity.
Other objects, advantages and novel features of the present invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings, in which:
A preferred method for making a carbon nanotube-based field emission device in accordance with the invention will be described below with reference to
Step 1 is providing a substrate having a flat surface. A variation in flatness of the surface is less than 1 micron.
Step 2 is forming a layer of catalyst on the surface of the substrate. Generally, the catalyst is a transition metal such as Fe (iron), Co (cobalt), Ni (nickel) or an alloy thereof. A thickness of the layer of catalyst is in the range from 1 nm to 10 nm, and preferably in the range from 3 nm to 5 nm. Further, the layer of catalyst is preferably annealed at a temperature of 300˜400 degree.
Step 3 is forming a carbon nanotube array on the layer of catalyst. A preferred chemical vapor deposition process for growing the carbon nanotube array includes the following steps: introducing flowing carbon-containing gas such as ethylene or acetylene, heating the flowing carbon-containing gas to a temperature of about 700 degree, and producing the carbon nanotube array on the layer of catalyst.
Step 4 is forming a cathode electrode on a top of the carbon nanotube array. Generally, the forming of the cathode electrode employs a coating process or a chemical deposition of a metallic material.
Step 5 is removing the substrate so as to expose a bottom surface of the carbon nanotube array. Preferably, the exposed bottom surface of the carbon nanotube array is treated by applying laser irradiation thereto. This cleans the surface and improves its electron emission performance.
Accordingly, the exposed bottom surface of the carbon nanotube array has the same flatness as the surface of the substrate.
Referring to
Referring to
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Referring to
Referring to
Referring to
Using the above preferred method, the uniformity of the exposed surface of the carbon nanotube array 30 is mainly determined by the flatness of the silicon oxide layer 22.
It should be noted that the working plate 20 and the gate electrodes 44 are both optional for practicing the present invention. In addition, the negative feedback layer 402 is an optional element for adjusting resistance, if necessary.
An alternative method of the present invention will be described below with reference to
Referring to
Referring to
Referring to
It is noted that the substrates 22, 110 are not necessarily limited to being silicon oxide, but can instead be heatproof glass, silicon or other material which is suitable for growing carbon nanotube arrays. Such substitutions of materials are also within the spirit of the present invention.
It is understood that the invention may be embodied in other forms without departing from the spirit thereof. Thus, the present examples and embodiments are to be considered in all respects as illustrative and not restrictive, and the invention is not to be limited to the details given herein.
Claims
1. A method for making a carbon nanotube-based field emission device comprising steps of:
- providing a substrate having a flat surface which has a variation in flatness of less than 1 micron;
- forming a carbon nanotube array extending from a selected area of the surface of the substrate by a chemical vapor deposition process, the carbon nanotube array having a flat bottom surface corresponding to the flat surface of the substrate;
- forming a cathode electrode on a top of the carbon nanotube array; and
- removing the substrate so as to expose the flat bottom surface of the carbon nanotube array so that the flat bottom surface of the carbon nanotube array is thereby configured for acting as an electron emitting surface of the carbon nanotube-based field emission device.
2. The method as described in claim 1, wherein the flat bottom surface of the carbon nanotube array is treated by laser irradiation to clean the flat bottom surface thereof.
3. The method as described in claim 1, wherein the substrate is made of heatproof glass, silicon, or silicon oxide.
4. The method as described in claim 1, wherein further forming at least one gate electrode adjacent to the carbon nanotube array.
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Type: Grant
Filed: Mar 26, 2004
Date of Patent: Apr 15, 2008
Patent Publication Number: 20040209385
Assignees: Tsinghua University (Beijing), Hon Hai Precision Industry Co., Ltd. (Tu-Cheng, Taipei Hsien)
Inventors: Liang Liu (Beijing), Shou Shan Fan (Beijing)
Primary Examiner: Mariceli Santiago
Attorney: Wei Te Chung
Application Number: 10/811,415
International Classification: H01J 9/00 (20060101); H01J 9/02 (20060101);