Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: A method for producing a rare earth aluminate sintered body includes: preparing a molded body by mixing a fluorescent material having a composition of a rare earth aluminate and a raw material mixture comprising an oxide containing at least one rare earth element Ln selected from the group consisting of Y, La, Lu, Gd, and Tb, an oxide containing Ce, an oxide containing Al, and optionally an oxide containing at least one element M1 selected from the group consisting of Ga and Sc; and calcining the molded body to obtain a sintered body.

Abstract: The present disclosure discloses a display panel which includes a substrate with varied reflectivity dependent upon different wavelengths; a plurality of light emitting diodes located on the substrate; and a light adjusting layer located on the substrate, wherein the light adjusting layer and the plurality of light emitting diodes are located on the same side of the substrate, the transmittance of material forming the light adjusting layer is varied dependent upon different wavelengths, and the transmittance change of the light adjusting layer at different wavelengths is inversely correlated with the change of the reflectivity of the substrate at the corresponding wavelengths.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, a pixel drive layer, a light-emitting device, an encapsulation layer, a first insulation layer, and a covering layer. The base substrate includes a display region and a peripheral region, the peripheral region includes a first peripheral region and a second peripheral region. The first insulation layer is in the second peripheral region, and includes a first notch, a side edge of the first notch away from the display region overlaps with the edge of the base substrate. The covering layer is at least partially filled in the first notch, and an orthographic projection of the covering layer on the base substrate at least partially overlaps with an orthographic projection of the first notch on the base substrate.

Abstract: A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Abstract: A luminaire is provided that includes an LED light engine emitting a light engine light beam and one or more optical devices configured to receive the light engine light beam and form a luminaire light beam emitted by the luminaire. The LED light engine includes an array of LED emitters mounted on a substrate, an array of lenses optically coupled to the array of LED emitters, and a plurality of filter regions. The filter regions of the plurality of filter regions are optically coupled to and fixedly mounted relative to the array of LED emitters. Each filter region of the plurality of filter regions is aligned with an associated LED of the array of LED emitters and is configured to filter substantially only light emitted by the associated LED.

Abstract: A method for manufacturing a display array includes the following steps: providing a substrate and forming a semiconductor stacked layer on the substrate; forming an insulating layer and a plurality of electrode pads on an outer surface of the semiconductor stacked layer, the insulating layer and the electrode pads directly contacting the semiconductor stacked layer, wherein the insulating layer has a plurality of openings spaced apart from each other; and transferring the semiconductor stacked layer, the insulating layer and the electrode pads from the substrate to a driving backplane, wherein the electrode pads are respectively electrically connected to the driving backplane through the openings of the insulating layer to form a plurality of light emitting regions in the semiconductor stacked layer as the electrode pads and the semiconductor stacked layer are energized by the driving backplane.

Abstract: A light-emitting diode package having a controlled beam angle is proposed. The diode package can include at least one first lead frame; at least one second lead frame formed to correspond to and be spaced apart from the at least one first lead frame; light-emitting diode chips mounted on the at least one first lead frame; a first package main body which is fixed on the partial surfaces of the at least one first lead frame and the at least one second lead frame and formed so as to have a first inclined side at a portion of the circumference around the light-emitting diode chips; and a second package main body formed so as to have a second inclined side at the remaining portion of the circumference around the light-emitting diode chips other than the portion.

Abstract: A light source module includes a light-emitting cell, a wiring structure provided on the light-emitting cell and connected to the light-emitting cell, a support structure that is apart from the light-emitting cell with the wiring structure therebetween in a vertical direction, a printed circuit board (PCB) that is apart from the wiring structure with the support substrate therebetween in the vertical direction and overlapping the light-emitting cell in the vertical direction, and at least one insulating film that is apart from the wiring structure in the vertical direction and covering at least one of a first surface of the support substrate, which faces the wiring structure, and a second surface of the support substrate, which faces the PCB.

Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.

Abstract: A display motherboard is provided. The display motherboard is provided with barrier walls on at least one of an array substrate or a cover plate in a non-display region, so that stress generated by a cutting will be blocked and released by the barrier walls when the display motherboard is cut. Therefore, the stress will not enter the sealant and the display region, and the stress is released, thereby to prevent microcracks in the sealant and even fractures in films of the display motherboard. Moreover, the stress cannot enter the display region, and the encapsulation of the display region is complete.

Abstract: A display device includes: a display module including a first area and a second area at least partially surrounding the first area in a plan view; an external member disposed on the display module; and an adhesive layer configured to couple the display module to the external member, wherein a coupling strength between the second area and the adhesive layer is greater than a coupling strength between the first area and the adhesive layer.

Abstract: A light emitting assembly includes a substrate, an adhesive layer on the substrate, and a plurality of light emitting units on the adhesive layer. Each of the light emitting units includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer disposed between the first-type and second-type semiconductor layers, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer. A light emitting apparatus including the light emitting assembly is provided. Methods for making the light emitting assembly and the light emitting apparatus are provided.

Abstract: Disclosed in an embodiment is a light-emitting element package comprising: a body including a cavity; a light-emitting element arranged on the bottom surface of the cavity and including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer, which is arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light-transmitting member arranged on the upper part of the cavity, wherein the body includes: a lower body including the bottom surface of the cavity; an upper body including the lateral surface of the cavity; and a first insulating layer arranged between the lower body and the upper body, the lower body includes a first conductive body and a second conductive body insulated and arranged together with the first conductive body, the first conductive type semiconductor layer is electrically connected with the first conductive body, the second conductive type semiconductor layer is electrical

Abstract: A conductive module includes spaced conductive layers and connecting lines. Adjacent conductive layers are electrically connected by one connecting line. Each connecting line includes a contact portion and an extending portion, the contact portion is electrically connected to one conductive layer and the extending portion. The extending portion is very stretchable in effective length to render the conductive module stretchable and deformable. A projection of the contact portion on a plane where the extending portion extends is a square, a width of the extending portion is equal to a side length of the contact portion.

Abstract: The present disclosure provides a driving circuit, including a transistor and a level shifter. The first terminal of the transistor is electrically connected to a light emitting diode and is configured to receive a supply voltage. The second terminal of the transistor is configured to receive a first reference voltage. The level shifter is configured to receive an input signal from a previous-stage driving circuit and adjust the voltage level of the input signal according to a voltage operating range formed by the supply voltage and the first reference voltage to generate a level-shifted signal corresponding to the voltage operating range and configured to control the transistor. The input signal varies between a second reference voltage and the supply voltage. The second reference voltage and the first reference voltage are different from each other and both lower than the supply voltage.

Abstract: A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

Abstract: The invention relates to a thermoplastic composition comprising (A) a semi-aromatic copolyamide comprising repeat units derived from diamine consisting primarily of tetramethylene diamine and hexamethylene diamine, or pentamethylene diamine and hexamethylene diamine, and dicarboxylic acid consisting primarily of terephthalic acid, having a VN of at least 100 ml/g; and (B) a reinforcing agent. The invention also relates to a plastic part made of the thermoplastic composition. The invention further relates to an automotive vehicle comprising a structural part made of the thermoplastic composition and to an electrical assembly comprising a plastic component made of the thermoplastic composition.

Abstract: A display substrate and a method for manufacturing the same are provided. The display substrate includes a base substrate and a display element provided on the base substrate. The method includes steps of forming a first protection layer at at least one of outer peripheral sides of the base substrate, and removing the first protection layer before attaching a cover plate to the base substrate on which the display element is provided.

Abstract: A retail display system is provided with a point-of-sale display unit sized to be received in a retail store aisle. A first and a second plurality of mirror panes are oriented within the display unit, which are formed from different material compositions. A mirror display assembly is provided with samples from the first and second pluralities of mirror panes to visually demonstrate the material composition difference between the first plurality of mirror panes and the second plurality of mirror panes. The mirror display assembly is provided with a support with a base. An image surface is mounted upon the base. A first sample mirror pane is mounted to the support and oriented at an angle relative to the image surface to reflect the image surface. A second sample mirror pane is mounted to the support and oriented at an angle relative to the image surface to reflect the image surface.

Abstract: A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

Abstract: There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer grown on the base surface and having a flat surface, there being substantially no voids in the aluminum nitride layer.

Abstract: A light transmissive first insulating film having light transmissive property to visible light, a second insulating film arranged opposite to the first insulating film, a plurality of conductor patterns formed of, for example, mesh patterns having the light transmissive property to the visible light and formed on a surface of at least one of the first insulating film and the second insulating film, a plurality of first light-emitting devices connected to any two conductor patterns of the plurality of conductor patterns, and a resin layer arranged between the first insulating film and the second insulating film to hold the first light-emitting devices are included.

Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Abstract: A liveness detection device comprising a light source unit, image sensor unit, and data processing module and authentication method thereof are provided. The light source unit comprises a substrate having a first inclined surface, whereby emitted light is reflected light from the first inclined surface. An application triggers an authentication process, which is indicated to a user. The light source unit begins illumination having a specific pattern and for a specific period and image signals are generated. Liveness detection signals are generated, via calculation of interference patterns, each, from more than one image signal, in sequence, for determination of liveness. When a liveness threshold is met, feature recognition data is generated, via calculation of interference patterns, each, from more than one image signal, in sequence, for matching. Then, the features are compared with previously enrolled data for locking or unlocking of the liveness detection device and/or system coupled thereto.

Abstract: There is provided a nitride semiconductor device that includes a first nitride semiconductor layer configured as an electron transit layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and configured as an electron supply layer, a ridge-shaped nitride semiconductor gate layer disposed on the second nitride semiconductor layer and including an acceptor-type impurity, and a gate electrode formed on the nitride semiconductor gate layer. The gate electrode includes a first metal film that is formed on the nitride semiconductor gate layer and is mainly made of Ti, and a second metal film that is formed on the first metal film and is made of TiN.

Abstract: A light emitting package is provided, the light emitting package includes a carrier having a main part that has multiple chip bonding regions, and each the chip bonding regions has two neighboring conductive parts. An insulating part is disposed on the main part and portion of the two neighboring conductive parts, and multiple hollow-out structures are formed by the insulating part and corresponded in position to the chip bonding regions. Each of the hollow-out structures has a side wall that surrounds the chip bonding regions, and the portion of the tops of the two neighboring conductive parts are exposed from a bottom portion of the hollow-out structure, and multiple light emitting chips are disposed onto the chip bonding surfaces.

Abstract: A flexible display device includes a flexible display panel having a bending area to be folded, and including a display substrate, and a thin-film encapsulation layer above the display substrate, a driving portion, and a function layer below the flexible display panel, and including a step portion below which the flexible display panel is electrically connected to the driving portion.

Abstract: An electronic module has a first electronic element 13, a first connector 60 provided in one side of the first electronic element 13, and having a first columnar part 62 extending to another side and a first groove part 64 provided in a one-side surface, and a second electronic element 23 provided in one side of the first connector 60 via a conductive adhesive agent provided inside a circumference of the first groove part 64. The first connector 60 has a first concave part 67 on one side at a position corresponding to the first columnar part 62.

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

Abstract: An optoelectronic semiconductor device and a method for forming an optoelectronic semiconductor device are disclosed. In an embodiment a device includes a carrier having a main plane of extension, at least one semiconductor chip arranged on the carrier, a frame arranged on the carrier and surrounding the semiconductor chip in lateral directions which are parallel to the main plane of extension of the carrier and a conversion layer covering the at least one semiconductor chip and the frame, wherein the at least one semiconductor chip extends further in a vertical direction than the frame, wherein the semiconductor chip is configured to emit electromagnetic radiation, and wherein the frame and the semiconductor chip are spaced from each other in the lateral directions by a gap.

Abstract: A pixel structure, a display device, and a method of manufacturing a pixel structure, the pixel structure including a base substrate; at least one first electrode arranged in an upper portion of the base substrate; at least one second electrode having a circular shape extending along a circumferential direction around the at least one first electrode; and a plurality of LED elements connected to the first and second electrodes.

Abstract: A light emitting device includes a substrate including a light emitting region. A first electrode is in the light emitting region. A second electrode is in the light emitting region and spaced apart from the first electrode. A light emitting element is between the first electrode and the second electrode. A first contact electrode connects an end of the light emitting element to the first electrode. A second contact electrode connects another end of the light emitting element to the second electrode. The first contact electrode and the second contact electrode have a thickness larger than or equal to that of the first electrode and the second electrode.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: The present disclosure relates to a display device and a fabrication method thereof, and more particularly, to a display device using a semiconductor light emitting device. The display device includes a semiconductor light emitting device disposed on a substrate, and having a first conductive electrode disposed on an upper edge of the semiconductor light emitting device, and a second conductive electrode disposed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode, a passivation layer disposed to cover a part of an upper surface of the semiconductor light emitting device, a first wiring electrode electrically connected to the first conductive electrode and a second wiring electrode electrically connected to the second conductive electrode.

Abstract: A display apparatus includes: a substrate including a thin-film transistor including an electrode, a non-display area, and a pad area including a lower and an upper conductive layer facing each other with an insulating layer therebetween. The lower conductive layer includes: a first conductive layer defining an end surface of the display apparatus, and a second conductive layer spaced apart from the first conductive layer to define a space between the first and second conductive layers, the insulating layer defines a first opening portion corresponding to the space, and the upper conductive layer is in a same layer as the electrode of the thin-film transistor, the upper conductive layer extending into the first opening portion corresponding to the space between the first and second conductive layers.

Abstract: An object of the present invention is to provide an electroconductive adhesive composition which has excellent thermal conductivity and which, even when repeatedly undergoing fluctuations in temperature, is less apt to cause adherend separation. The present invention relates to an electroconductive adhesive composition which contains: an electroconductive filler (A) containing metal particles (a1) having an average particle diameter of 0.5-10 ?m and silver particles (a2) having an average particle diameter of 10-200 nm; and particles (B) of a thermoplastic resin which is solid at 25° C.

Abstract: An organic light-emitting display apparatus includes: a first substrate; an insulating layer on the first substrate; a signal wiring on the insulating layer; an organic light-emitting device on the first substrate, the organic light-emitting device defining an active area and including a first electrode, a second electrode, and an intermediate layer between the first and second electrodes; a passivation layer on the insulating layer; and a metal layer on the passivation layer at an outer region adjacent to the active area, separated from the first electrode, and contacting the second electrode and the signal wiring, wherein a first opening is in the passivation layer at the outer region, and the metal layer contacts the insulating layer at the first opening.

Abstract: A light emitting device includes a substrate and a light emitting element mounted on the substrate, a light transmissive member, covering member, first and second protruding members, and a protective element. The light transmissive member is disposed on an upper surface of the light emitting element. The covering member covers an upper surface of the substrate, a lateral surface of the light emitting element, and at least a portion of a lateral surface of the light transmissive member such that an upper surface of the light transmissive member is exposed. The first protruding member and the second protruding member are provided on the substrate such that the light emitting element and the light transmissive member are positioned between the first protruding member and the second protruding member. The protective element is mounted on the substrate so as to be positioned between the light emitting element and the second protruding member.

Abstract: A display apparatus includes a display panel configured to display an image; a light source module provided behind a rear surface of the display panel and configured to emit light to the display panel, the light source module including a glass substrate and a light source provided behind a rear surface of the glass substrate; and a rear chassis covering the display panel and the light source module, wherein the light source is provided between the glass substrate and the rear chassis.

Abstract: The present invention discloses a micro LED structure including a first semiconductor layer, a first electrode, a second electrode, and an active layer. The first semiconductor layer has two opposite sides defined as a first surface and a second surface. The first semiconductor layer has a doped region located therein and exposed on the first surface. A pn junction is formed between the doped region and the first semiconductor layer. The first electrode and the second electrode, located on the first surface, are capable of electrically connecting to the first semiconductor layer and the doped region respectively. The active layer is adjacent to the second surface. Wherein the first semiconductor layer is a first doping type, and the doped region is a second doping type different from the first doping type, and the first semiconductor layer and the pn junction are located at identical side of the active layer.

Abstract: A photodetector includes an UV transparent n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.

Abstract: Embodiments of a flexible electroluminescent (EL) device are described. An EL device includes a device stack and a flexible substrate configured to support the device stack. The device stack can include a anode and a cathode, a quantum dot (QD) film positioned between the anode and the cathode and configured to produce light having a first peak wavelength. The device stack further includes a patterned insulating layer disposed on the anode and configured to form electrically active regions in the device stack and to control emission of the light from the EL device through the electrically active regions. The EL device further includes an encapsulation layer disposed on the cathode.

Abstract: Embodiments relate to a light emitting device package and a light source device. A light emitting device package according to the embodiment may include a first package body; a second package body disposed on the first package body, and comprising an opening passing through an upper surface and a lower surface of the second package body; and a light emitting device disposed in the opening, and comprising a first bonding part and a second bonding part. The first package body may include a first opening and a second opening that pass through an upper surface and a lower surface of the first package body. The upper surface of the first package body may be coupled with the lower surface of the second package body, the first bonding part may be disposed on the first opening, and the second bonding part may be disposed on the second opening.

Abstract: An integrated Fourier domain mode-locked optoelectronic oscillator and its application and a communication system are provided, which relates to the technical field of microwave photonics. The integrated Fourier domain mode-locked optoelectronic oscillator includes an optoelectronic chip and an electronic chip. The optoelectronic chip includes a laser, a modulator, an optical notch filter, and a photodetector coupled via an optical waveguide. The electronic chip includes an electrical amplifier and a power splitter coupled via a coplanar microwave waveguide. The volume, weight and power consumption of the Fourier domain mode-locked optoelectronic oscillator is greatly reduced by integrating all the devices on the chip. A tunable sweeping microwave signal output is realized, and the sweeping speed of the output signal is increased. The integrated Fourier domain mode-locked optoelectronic oscillator can be used in radars and communication systems.

Abstract: A light emitting device including a fluorescent material with reduced hue, and a method of manufacturing the light emitting device are provided. A light emitting device 100 includes: a light emitting element 1; a first light-transmissive member 3 covering the light emitting element 1; and a light diffusing member 5 contained in the first light-transmissive member 3. The light diffusing member 5 includes hollow particles. The surface of the first light-transmissive member 3 has irregular shapes attributed to the light diffusing member 5. The first light-transmissive member 3 is covered with a second light-transmissive member 4. The second light-transmissive member 4 has a convex structure in which the center is the uppermost point. The irregular shapes attributed to the light diffusing member 5 are covered with the second light-transmissive member 4.

Abstract: The light emitting device package disclosed in the embodiment includes a package body including first and second frames, and a first body disposed between the first and second frames; a second body disposed on the package body and including a cavity and a sub-cavity spaced apart from the cavity; a light emitting device disposed in the cavity and including first and second bonding portions; and a protection device disposed in the sub-cavity, wherein the package body and the second body may be coupled to an adhesive member.

Abstract: Diodes employing one or more Group III-Nitride polarization junctions. A III-N polarization junction may include two III-N material layers having opposite crystal polarities. The opposing polarities may induce a two-dimensional charge sheet (e.g., 2D electron gas) within each of the two III-N material layers. Opposing crystal polarities may be induced through introduction of an intervening layer between two III-N material layers. The intervening layer may be of a material other than a Group III-Nitride. Where a P-i-N diode structure includes two Group III-Nitride polarization junctions, opposing crystal polarities at a first of such junctions may induce a 2D electron gas (2DEG), while opposing crystal polarities at a second of such junctions may induce a 2D hole gas (2DHG). Diode terminals may then couple to each of the 2DEG and 2DHG.

Abstract: Disclosed is an organic light-emitting display device, which prevents lateral current leakage by providing a structure on a bank so as to cut off an organic material, which is formed in a subsequent process, around the structure.