Abstract: A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that oscillates a laser, a Y-axis scanner that executes a high-speed scan with a laser beam emitted from the laser oscillator in a Y-axis direction, an X-axis scanner that executes processing feed of the laser beam emitted from the laser oscillator in an X-axis direction, and a beam condenser. The Y-axis scanner is selected from any of an AOD, a resonant scanner, and a polygon scanner and the X-axis scanner is selected from a galvano scanner and a resonant scanner.

Abstract: A light emitting element includes a support substrate, and first and second light emitting portions. Each of the first light emitting portion and the second light emitting portion includes a semiconductor layered body, an insulating film, first and second electrodes and first and second external connection portions. The first external connection portion provided in the first light emitting portion includes a first portion provided adjacent to the second external connection portion of the first light emitting portion in a first direction and provided adjacent to the first external connection portion of the second light emitting portion in a second direction, and the first portion has an inclined portion inclined with respect to one side of the semiconductor layered body on a side facing the first external connection portion provided in the second light emitting portion in the second direction.

Abstract: A light emitting device including a substrate, a first pad, a second pad, a light emitting diode, a first connection structure, a second connection structure, and a patterned adhesive layer and a method for manufacturing the same are provided. The first pad and the second pad are located on the substrate. The light emitting diode includes a first semiconductor layer, a second semiconductor layer overlapping the first semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are respectively connected to the first semiconductor layer and the second semiconductor layer. The first connection structure electrically connects the first electrode to the first pad. The second connection structure electrically connects the second electrode to the second pad. The patterned adhesive layer is located between the substrate and the light emitting diode and does not contact the first connection structure and the second connection structure.

Abstract: A micro-light emitting diode (micro-LED) device includes semiconductor mesa structures, and waveguides and grating couplers in regions of a semiconductor layer between the semiconductor mesa structures. At least some light emitted in the active region of each semiconductor mesa structure can be coupled into and guided by a waveguide towards a grating coupler. The grating coupler is configured to diffract the guided light out of the micro-LED device, for example, in a direction substantially perpendicular to the light-emitting surface of the micro-LED device, through regions between the semiconductor mesa structures.

Abstract: A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Abstract: A light-emitting diode (LED) package includes a package substrate, an LED chip disposed on a first surface of the package substrate, and a first external connection pad and a second external connection pad disposed on a second surface of the package substrate opposite the first surface. The first external connection pad includes a first side, a second side, a third side and a fourth side, the first side being parallel to the second side, and the third side being parallel to the fourth side. The first side is spaced farther from a center of the package substrate than the second side. A length of the first side is shorter than a length of the second side.

Abstract: An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer.

Abstract: According to one embodiment, a lighting-emitting element includes a light-emitting portion, a first terminal electrode and a second terminal electrode. The first terminal electrode includes a first cavity portion at a position overlapping a first connection electrode in planar view when the first terminal electrode is brought into contact with the first connection electrode. The second terminal electrode includes a second cavity portion at a position overlapping a second connection electrode in planar view when the second terminal electrode is brought into contact with the second connection electrode.

Abstract: Examples are disclosed relating to foldable display devices and methods for folding a display device through a range of degrees at a folding portion. In one example, a display device comprises a rear cover and a cover glass layer extending from a left side of the display device through the folding portion to a right side. A light-emitting layer is between the rear cover and the cover glass layer. A backplate is between the rear cover and the light-emitting layer, with the backplate comprising backplate slots that extend from an upper surface through a lower surface to facilitate bending of the backplate.

Abstract: An embodiment provides a beam projector module that includes: a light source configured to output light; a substrate configured to support the light source; an optical device configured to reduce the light in terms of intensity output to a predetermined space; a frame configured to space the optical device apart from the light source by a predetermined distance, the frame forming a closed space with the substrate and the optical device; a temperature sensor configured to measure a temperature of the frame; and a processor configured to control an output of the light source. The processor is configured to operate the light source in an eye-safety mode when a temperature drop rate of the frame exceeds a reference value.

Abstract: A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

Abstract: An exemplary embodiment of the present inventive concept provides a display device including: a substrate; a plurality of first wires extending along a first direction on the substrate; a first insulating layer disposed on the plurality of first wires; a plurality of second wires disposed on the first insulating layer and extending along a second direction crossing the first direction; a second insulating layer disposed on the plurality of second wires; and a plurality of pixel electrodes disposed on the second insulating layer, wherein the second insulating layer includes a first opening which is disposed between the plurality of pixel electrodes.

Abstract: An illuminant (1) for a motor vehicle headlight includes an SMD component (2) and a circuit carrier (4). The SMD component (2) is connected to the circuit carrier (4) by means of a solder connection, wherein the circuit carrier has a plurality of contact elements (5a), wherein in order to dissipate waste heat from the SMD component (2), the circuit carrier (4) has a plurality of micro-vias (7) designed for heat conduction, wherein a number of contact elements (5a) have a substantially hexagonal base (5b), wherein the micro-vias (7) are arranged in a two-dimensional hexagonal packing arrangement with respect to one another in such a way that the substantially hexagonal bases (5b) of the contact elements (5a) are interspersed by a plurality of micro-vias (7) substantially completely, according to the highest area packing density.

Abstract: The present disclosure provides a color filter substrate, a display panel, a display device. The color filter substrate comprises a first pixel area and a second pixel area adjacent to the first pixel area. The color filter substrate further comprises a base; a plurality of micro light emitting diode (Micro LED) light-emitting units disposed on the base corresponding to the first pixel area; a planarization layer disposed on the Micro LED light-emitting units and the base; and color resists disposed on the planarization layer corresponding to the second pixel area. The present disclosure solves the problem that optical sensors cannot overlap optical display spatially in LCD screens.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: A method for producing a rare earth aluminate sintered body includes: preparing a molded body by mixing a fluorescent material having a composition of a rare earth aluminate and a raw material mixture comprising an oxide containing at least one rare earth element Ln selected from the group consisting of Y, La, Lu, Gd, and Tb, an oxide containing Ce, an oxide containing Al, and optionally an oxide containing at least one element M1 selected from the group consisting of Ga and Sc; and calcining the molded body to obtain a sintered body.

Abstract: The present disclosure discloses a display panel which includes a substrate with varied reflectivity dependent upon different wavelengths; a plurality of light emitting diodes located on the substrate; and a light adjusting layer located on the substrate, wherein the light adjusting layer and the plurality of light emitting diodes are located on the same side of the substrate, the transmittance of material forming the light adjusting layer is varied dependent upon different wavelengths, and the transmittance change of the light adjusting layer at different wavelengths is inversely correlated with the change of the reflectivity of the substrate at the corresponding wavelengths.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, a pixel drive layer, a light-emitting device, an encapsulation layer, a first insulation layer, and a covering layer. The base substrate includes a display region and a peripheral region, the peripheral region includes a first peripheral region and a second peripheral region. The first insulation layer is in the second peripheral region, and includes a first notch, a side edge of the first notch away from the display region overlaps with the edge of the base substrate. The covering layer is at least partially filled in the first notch, and an orthographic projection of the covering layer on the base substrate at least partially overlaps with an orthographic projection of the first notch on the base substrate.

Abstract: A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Abstract: A luminaire is provided that includes an LED light engine emitting a light engine light beam and one or more optical devices configured to receive the light engine light beam and form a luminaire light beam emitted by the luminaire. The LED light engine includes an array of LED emitters mounted on a substrate, an array of lenses optically coupled to the array of LED emitters, and a plurality of filter regions. The filter regions of the plurality of filter regions are optically coupled to and fixedly mounted relative to the array of LED emitters. Each filter region of the plurality of filter regions is aligned with an associated LED of the array of LED emitters and is configured to filter substantially only light emitted by the associated LED.

Abstract: A method for manufacturing a display array includes the following steps: providing a substrate and forming a semiconductor stacked layer on the substrate; forming an insulating layer and a plurality of electrode pads on an outer surface of the semiconductor stacked layer, the insulating layer and the electrode pads directly contacting the semiconductor stacked layer, wherein the insulating layer has a plurality of openings spaced apart from each other; and transferring the semiconductor stacked layer, the insulating layer and the electrode pads from the substrate to a driving backplane, wherein the electrode pads are respectively electrically connected to the driving backplane through the openings of the insulating layer to form a plurality of light emitting regions in the semiconductor stacked layer as the electrode pads and the semiconductor stacked layer are energized by the driving backplane.

Abstract: A light-emitting diode package having a controlled beam angle is proposed. The diode package can include at least one first lead frame; at least one second lead frame formed to correspond to and be spaced apart from the at least one first lead frame; light-emitting diode chips mounted on the at least one first lead frame; a first package main body which is fixed on the partial surfaces of the at least one first lead frame and the at least one second lead frame and formed so as to have a first inclined side at a portion of the circumference around the light-emitting diode chips; and a second package main body formed so as to have a second inclined side at the remaining portion of the circumference around the light-emitting diode chips other than the portion.

Abstract: InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.

Abstract: A light source module includes a light-emitting cell, a wiring structure provided on the light-emitting cell and connected to the light-emitting cell, a support structure that is apart from the light-emitting cell with the wiring structure therebetween in a vertical direction, a printed circuit board (PCB) that is apart from the wiring structure with the support substrate therebetween in the vertical direction and overlapping the light-emitting cell in the vertical direction, and at least one insulating film that is apart from the wiring structure in the vertical direction and covering at least one of a first surface of the support substrate, which faces the wiring structure, and a second surface of the support substrate, which faces the PCB.

Abstract: A display motherboard is provided. The display motherboard is provided with barrier walls on at least one of an array substrate or a cover plate in a non-display region, so that stress generated by a cutting will be blocked and released by the barrier walls when the display motherboard is cut. Therefore, the stress will not enter the sealant and the display region, and the stress is released, thereby to prevent microcracks in the sealant and even fractures in films of the display motherboard. Moreover, the stress cannot enter the display region, and the encapsulation of the display region is complete.

Abstract: A display device includes: a display module including a first area and a second area at least partially surrounding the first area in a plan view; an external member disposed on the display module; and an adhesive layer configured to couple the display module to the external member, wherein a coupling strength between the second area and the adhesive layer is greater than a coupling strength between the first area and the adhesive layer.

Abstract: A light emitting assembly includes a substrate, an adhesive layer on the substrate, and a plurality of light emitting units on the adhesive layer. Each of the light emitting units includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer disposed between the first-type and second-type semiconductor layers, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer. A light emitting apparatus including the light emitting assembly is provided. Methods for making the light emitting assembly and the light emitting apparatus are provided.

Abstract: Disclosed in an embodiment is a light-emitting element package comprising: a body including a cavity; a light-emitting element arranged on the bottom surface of the cavity and including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer, which is arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light-transmitting member arranged on the upper part of the cavity, wherein the body includes: a lower body including the bottom surface of the cavity; an upper body including the lateral surface of the cavity; and a first insulating layer arranged between the lower body and the upper body, the lower body includes a first conductive body and a second conductive body insulated and arranged together with the first conductive body, the first conductive type semiconductor layer is electrically connected with the first conductive body, the second conductive type semiconductor layer is electrical

Abstract: A conductive module includes spaced conductive layers and connecting lines. Adjacent conductive layers are electrically connected by one connecting line. Each connecting line includes a contact portion and an extending portion, the contact portion is electrically connected to one conductive layer and the extending portion. The extending portion is very stretchable in effective length to render the conductive module stretchable and deformable. A projection of the contact portion on a plane where the extending portion extends is a square, a width of the extending portion is equal to a side length of the contact portion.

Abstract: The present disclosure provides a driving circuit, including a transistor and a level shifter. The first terminal of the transistor is electrically connected to a light emitting diode and is configured to receive a supply voltage. The second terminal of the transistor is configured to receive a first reference voltage. The level shifter is configured to receive an input signal from a previous-stage driving circuit and adjust the voltage level of the input signal according to a voltage operating range formed by the supply voltage and the first reference voltage to generate a level-shifted signal corresponding to the voltage operating range and configured to control the transistor. The input signal varies between a second reference voltage and the supply voltage. The second reference voltage and the first reference voltage are different from each other and both lower than the supply voltage.

Abstract: A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

Abstract: The invention relates to a thermoplastic composition comprising (A) a semi-aromatic copolyamide comprising repeat units derived from diamine consisting primarily of tetramethylene diamine and hexamethylene diamine, or pentamethylene diamine and hexamethylene diamine, and dicarboxylic acid consisting primarily of terephthalic acid, having a VN of at least 100 ml/g; and (B) a reinforcing agent. The invention also relates to a plastic part made of the thermoplastic composition. The invention further relates to an automotive vehicle comprising a structural part made of the thermoplastic composition and to an electrical assembly comprising a plastic component made of the thermoplastic composition.

Abstract: A display substrate and a method for manufacturing the same are provided. The display substrate includes a base substrate and a display element provided on the base substrate. The method includes steps of forming a first protection layer at at least one of outer peripheral sides of the base substrate, and removing the first protection layer before attaching a cover plate to the base substrate on which the display element is provided.

Abstract: A retail display system is provided with a point-of-sale display unit sized to be received in a retail store aisle. A first and a second plurality of mirror panes are oriented within the display unit, which are formed from different material compositions. A mirror display assembly is provided with samples from the first and second pluralities of mirror panes to visually demonstrate the material composition difference between the first plurality of mirror panes and the second plurality of mirror panes. The mirror display assembly is provided with a support with a base. An image surface is mounted upon the base. A first sample mirror pane is mounted to the support and oriented at an angle relative to the image surface to reflect the image surface. A second sample mirror pane is mounted to the support and oriented at an angle relative to the image surface to reflect the image surface.

Abstract: A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

Abstract: There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer grown on the base surface and having a flat surface, there being substantially no voids in the aluminum nitride layer.

Abstract: A light transmissive first insulating film having light transmissive property to visible light, a second insulating film arranged opposite to the first insulating film, a plurality of conductor patterns formed of, for example, mesh patterns having the light transmissive property to the visible light and formed on a surface of at least one of the first insulating film and the second insulating film, a plurality of first light-emitting devices connected to any two conductor patterns of the plurality of conductor patterns, and a resin layer arranged between the first insulating film and the second insulating film to hold the first light-emitting devices are included.

Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Abstract: A liveness detection device comprising a light source unit, image sensor unit, and data processing module and authentication method thereof are provided. The light source unit comprises a substrate having a first inclined surface, whereby emitted light is reflected light from the first inclined surface. An application triggers an authentication process, which is indicated to a user. The light source unit begins illumination having a specific pattern and for a specific period and image signals are generated. Liveness detection signals are generated, via calculation of interference patterns, each, from more than one image signal, in sequence, for determination of liveness. When a liveness threshold is met, feature recognition data is generated, via calculation of interference patterns, each, from more than one image signal, in sequence, for matching. Then, the features are compared with previously enrolled data for locking or unlocking of the liveness detection device and/or system coupled thereto.

Abstract: There is provided a nitride semiconductor device that includes a first nitride semiconductor layer configured as an electron transit layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and configured as an electron supply layer, a ridge-shaped nitride semiconductor gate layer disposed on the second nitride semiconductor layer and including an acceptor-type impurity, and a gate electrode formed on the nitride semiconductor gate layer. The gate electrode includes a first metal film that is formed on the nitride semiconductor gate layer and is mainly made of Ti, and a second metal film that is formed on the first metal film and is made of TiN.

Abstract: A light emitting package is provided, the light emitting package includes a carrier having a main part that has multiple chip bonding regions, and each the chip bonding regions has two neighboring conductive parts. An insulating part is disposed on the main part and portion of the two neighboring conductive parts, and multiple hollow-out structures are formed by the insulating part and corresponded in position to the chip bonding regions. Each of the hollow-out structures has a side wall that surrounds the chip bonding regions, and the portion of the tops of the two neighboring conductive parts are exposed from a bottom portion of the hollow-out structure, and multiple light emitting chips are disposed onto the chip bonding surfaces.

Abstract: A flexible display device includes a flexible display panel having a bending area to be folded, and including a display substrate, and a thin-film encapsulation layer above the display substrate, a driving portion, and a function layer below the flexible display panel, and including a step portion below which the flexible display panel is electrically connected to the driving portion.

Abstract: An electronic module has a first electronic element 13, a first connector 60 provided in one side of the first electronic element 13, and having a first columnar part 62 extending to another side and a first groove part 64 provided in a one-side surface, and a second electronic element 23 provided in one side of the first connector 60 via a conductive adhesive agent provided inside a circumference of the first groove part 64. The first connector 60 has a first concave part 67 on one side at a position corresponding to the first columnar part 62.

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

Abstract: An optoelectronic semiconductor device and a method for forming an optoelectronic semiconductor device are disclosed. In an embodiment a device includes a carrier having a main plane of extension, at least one semiconductor chip arranged on the carrier, a frame arranged on the carrier and surrounding the semiconductor chip in lateral directions which are parallel to the main plane of extension of the carrier and a conversion layer covering the at least one semiconductor chip and the frame, wherein the at least one semiconductor chip extends further in a vertical direction than the frame, wherein the semiconductor chip is configured to emit electromagnetic radiation, and wherein the frame and the semiconductor chip are spaced from each other in the lateral directions by a gap.

Abstract: A pixel structure, a display device, and a method of manufacturing a pixel structure, the pixel structure including a base substrate; at least one first electrode arranged in an upper portion of the base substrate; at least one second electrode having a circular shape extending along a circumferential direction around the at least one first electrode; and a plurality of LED elements connected to the first and second electrodes.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Disclosed is an organic light-emitting display device, which prevents lateral current leakage by providing a structure on a bank so as to cut off an organic material, which is formed in a subsequent process, around the structure.